Patents Assigned to Commissariat a l'Energie Atomique et Aux Energies Alternatives
  • Patent number: 10741757
    Abstract: The disclosed process includes the successive stages of providing a substrate comprising a dielectric layer; forming a first layer of block copolymers on a part of the dielectric layer, so that the dielectric layer exhibits free zones with a random spatial distribution; etching the free zones, so as to structure the dielectric layer; removing the first layer of block copolymers; forming a first electrode on the structured dielectric layer; forming a memory layer, of resistive memory type, on the first electrode; forming a second electrode on the memory layer; forming a second layer of block copolymers on a part of the second electrode, so that the second electrode exhibits free zones with a random spatial distribution; etching the free zones, so as to structure the second electrode; and removing the second layer of block copolymers.
    Type: Grant
    Filed: June 4, 2019
    Date of Patent: August 11, 2020
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Elisa Vianello, Selina La Barbera, Jean-Francois Nodin, Raluca Tiron
  • Patent number: 10741398
    Abstract: A method for forming reliefs on a face of a substrate is provided, successively including forming a protective screen for protecting at least a first zone of the face; an implanting to introduce at least one species comprising carbon into the substrate from the face of the substrate, the forming of the protective screen and the implanting being configured to form, in the substrate, at least one carbon modified layer having a concentration of implanted carbon greater than or equal to an etching threshold only from a second zone of the face of the substrate not protected by the protective screen; removing the protective screen; and etching the substrate from the first zone selectively with respect to the second zone.
    Type: Grant
    Filed: February 2, 2018
    Date of Patent: August 11, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Lamia Nouri, Stefan Landis, Nicolas Posseme
  • Patent number: 10741852
    Abstract: A bipolar plate for an electrochemical reactor is provided, including first and second opposing outer conductive faces, and including first flow channels formed on the first outer conductive face, extending in a same direction; first injection orifices formed in the first outer conductive face; and a first homogenization zone formed on the first outer conductive face and including homogenization channels, each connecting a first injection orifices to a plurality of the first flow channels, and each sub-dividing into a plurality of branches extending from the first injection orifice to one of the first flow channels.
    Type: Grant
    Filed: July 16, 2015
    Date of Patent: August 11, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Jean-Philippe Poirot-Crouvezier
  • Patent number: 10738848
    Abstract: According to an aspect, this invention relates to a cooling device for a disc brake, the device extending in a longitudinal direction and comprising a first portion configured to surround the discs of the brake, intended for being arranged facing the side surfaces of the brake discs and configured to capture, by irradiation and/or convection, the heat generated by the discs during the friction. The cooling device further includes a second portion, secured and thermally coupled to the first portion, offset in the longitudinal direction relative to the first portion, and provided with tins extending radially relative to the longitudinal direction and configured to dissipate the heat captured by the first portion, by convection and/or irradiation, into the ambient air.
    Type: Grant
    Filed: May 4, 2016
    Date of Patent: August 11, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Jean-Antoine Gruss, Frederic Ducros
  • Patent number: 10739583
    Abstract: A method for determining at least one reflow parameter for obtaining a structure approximating a sought structure by reflowing an initial structure different to the sought structure, the initial structure including at least one pattern formed in a thermo-deformable layer arranged on a substrate. The thermo-deformable layer forms a residual layer surrounding each pattern and from which each pattern extends such that each pattern has an interface only with the surrounding medium. The method includes: predicting progression over time of geometry of the initial structure subject to reflow, to obtain a plurality of predicted structures each associated with reflow parameters including at least a reflow time and a reflow temperature; computing correlation values of the geometry of each predicted structure with respect to the sought structure; identifying reflow parameters for obtaining the predicted structure offering a highest correlation value.
    Type: Grant
    Filed: January 19, 2015
    Date of Patent: August 11, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Vincent Reboud, Stefan Landis, Etienne Rognin
  • Patent number: 10741565
    Abstract: The application relates to an integrated circuit with SRAM memory and provided with several superimposed levels of transistors, the integrated circuit including SRAM cells provided with a first transistor and a second transistor belonging to an upper level of transistors and each having a double gate composed of an upper electrode and a lower electrode laid out on either side of a semiconductor layer, a lower gate electrode of the first transistor being connected to a lower gate electrode of the second transistor.
    Type: Grant
    Filed: April 9, 2019
    Date of Patent: August 11, 2020
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, STMicroelectronics (Crolles 2) SAS
    Inventors: Francois Andrieu, Remy Berthelon, Bastien Giraud
  • Patent number: 10740068
    Abstract: A modular reduction device particularly for cryptography on elliptical curves. The device includes a Barrett modular reduction circuit and a cache memory in which the results of some precalculations are carried out. When the result is not present in the cache memory, a binary division circuit makes the precalculation and stores the result in the cache memory.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: August 11, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Thomas Hiscock
  • Patent number: 10738783
    Abstract: The invention concerns a circulator (2) for circulating a refrigerant fluid (4) in a circuit (6) of a cryogenic installation (1) from and to an element (3) having a thermal load, the circulator (2) including a drive module (8a, 8b) and a pumping module (9a, 9b) including a centrifugal wheel (10), said drive module (8a, 8b) having a magnetic coupling (51) to said pumping module (9a, 9b) in order to drive said centrifugal wheel (10) in a rotary movement.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: August 11, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: François Viargues, Gérard Marzo, Bertrand Rollet
  • Patent number: 10737194
    Abstract: A liquid-to-vapor conversion device includes a chamber having an opening connected to a liquid intake, a pressure relief opening, and a vapor outlet. The device also includes a flow controller arranged at the level of the liquid intake, and a burst disk installed at the level of the pressure relief opening. Further, the device includes pressure-limiting means arranged at the level of the liquid intake. The pressure-limiting means is configured to decrease the flow rate in the liquid intake when the pressure in the liquid intake exceeds a threshold value smaller than a bursting pressure of the burst disk.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: August 11, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: André Chatroux, Pascal Giroud, Georges Gousseau
  • Patent number: 10742166
    Abstract: A method for the electrical characterization of a photovoltaic cell of a photovoltaic module, the method including steps of obtaining the irradiance received by the photovoltaic module, obtaining a temperature of each photovoltaic cell of a first submodule of the photovoltaic module, comparing the temperature obtained for each photovoltaic cell of the first submodule with a reference temperature, determining the state of each photovoltaic cell of the first submodule between a healthy state, in which its temperature is equal to the reference temperature, and a faulty state, in which its temperature is different from the reference temperature, estimating the I-V curve associated with a first photovoltaic cell of the first submodule, by searching in a database of I-V curves.
    Type: Grant
    Filed: October 22, 2018
    Date of Patent: August 11, 2020
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Franck Al Shakarchi, Duy Long Ha
  • Publication number: 20200251570
    Abstract: There is provided a method for etching a dielectric layer covering at least partially a flank of a structure made of a semi-conductive material, the structure having at least one face, the method including a plurality of sequences, each including at least the following steps: a main oxidation so as to form an oxide film; a main anisotropic etching of the oxide film, carried out so as to etch a portion of the oxide film extending parallel to the flanks and at least some of the dielectric layer, be stopped before etching the structure and a whole thickness of another portion of the oxide film extending perpendicularly to the flanks, the steps being repeated until the complete removal of the dielectric layer located on the flanks of the structure.
    Type: Application
    Filed: December 20, 2019
    Publication date: August 6, 2020
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Nicolas POSSEME, Vincent Ah-Leung, Olivier Pollet
  • Publication number: 20200251569
    Abstract: There is provided a method for producing a transistor with a raised source and drain the method including depositing a layer on the gate pattern and the active layer; carrying out an isotropic modification of the layer over a thickness to obtain a first portion of modified layer, carrying out an anisotropic modification of the layer over another thickness, along a direction normal to the active layer, to obtain second portions of modified layer, by conserving portions of non-modified layer on the flanks of the gate pattern and at the foot of the gate pattern, removing the first and second modified portions by conserving the portions, by selective etching, to form spacers having an L-shape, epitaxially growing the source and drain in contact with the L-shaped spacers, to obtain the source and drain having tilted faces.
    Type: Application
    Filed: December 20, 2019
    Publication date: August 6, 2020
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Nicolas POSSEME
  • Patent number: 10732307
    Abstract: A method for producing a device for detecting flux of neutrons with parameters in predetermined ranges, including: one phase of determining parameters, including: simulating penetration of a flux of incident neutrons with parameters in the predetermined ranges through a modelled stack including in succession and in order at least: one first electrode; one substrate including: a first layer; and a second layer; and one second electrode; and simulating at least one defect peak created in the first layer by vacancies and/or ionization of the particles generated by collisions between neutrons of the flux of incident neutrons and atoms of the second dopant species; and identifying depth of the defect peak closest the interface between the first and second layers of the modelled stack.
    Type: Grant
    Filed: December 21, 2015
    Date of Patent: August 4, 2020
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, UNIVERSITE D'AIX-MARSEILLE
    Inventors: Laurent Ottaviani, Vanessa Vervisch, Fatima Issa, Abdallah Lyoussi
  • Patent number: 10732050
    Abstract: A bolometer type detection structure for detecting electromagnetic radiation is provided, including a MOSFET transistor associated with a first absorbing element in order to detect an increase in temperature of the first absorbing element during absorption of the electromagnetic radiation, the transistor including at least one first and at least one second zones, at least one third zone separating the first and second zones from each other, and at least one first gate electrode arranged to bias the third zone, the first gate electrode including at least one first metal portion forming the first absorbing element, the first metal portion having a thickness Ep satisfying: 150 ? ? ? ? ? Ep ? 700 ? ? ? , where ? is a resistivity of a metal material forming the at least one first metal portion. A process for manufacturing the structure is also provided.
    Type: Grant
    Filed: September 19, 2017
    Date of Patent: August 4, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Jean-Jacques Yon, Etienne Fuxa
  • Publication number: 20200244033
    Abstract: A device for cooling locally, including a cooling member, a crystal having the capacity to cool via absorption of a near-infrared exciting light signal, an illuminating system intended to deliver an exciting light signal, the crystal having an elongate shape about a longitudinal axis between a near end and a far end and having a closed constant outside cross section and containing a central channel formed, from its far end, over at least some of its length, the cooling member including a rod embedded via a first end into the central channel of the crystal and including a protruding second end that forms a cooling finger.
    Type: Application
    Filed: January 28, 2020
    Publication date: July 30, 2020
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Quentin MERMILLOD-ANSLEME, Nicolas AUBERT, Claude CHABROL, Mathieu DUPOY
  • Patent number: 10724937
    Abstract: A device including a light source, an image sensor, and a holder defining two positions between the light source and the image sensor. Each position is able to receive an object with a view to its observation. An optical system is placed between the two positions. Thus, when an object is placed in a first position, it may be observed, through the optical system, via a conventional microscopy modality. When an object is placed in the second position, it may be observed via a second lensless imagery modality.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: July 28, 2020
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, BIOMERIEUX
    Inventors: Francois Perraut, Quentin Josso
  • Patent number: 10727320
    Abstract: A method of manufacturing a field effect transistor is provided, including supplying a substrate surmounted by first, second, and third structures, the second structure arranged between the first and the third structures and including at least one first nano-object located away from the substrate, a part of the first nano-object being configured to form a channel area of the transistor; forming electrodes of the transistor including epitaxial growth of a first material to obtain a first continuity of matter made of the first material between the second structure and the first structure, and to obtain a second continuity of matter made of the first material between the second structure and the third structure; and epitaxial growth of a second material, starting from the first material, the second material having a lattice parameter different from a lattice parameter of the first material of the first and the second continuities.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: July 28, 2020
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Shay Reboh, Emmanuel Augendre, Remi Coquand, Nicolas Loubet
  • Patent number: 10726284
    Abstract: A calculation device, for the selection and the description of points of interest in at least one image decomposed into a plurality of strips, includes a first module for selecting and indexing points of interest from among a set of points of interest detected in the image, the first module being configured to select, in each strip, at most a fixed number P of candidate points of interest, and associate a unique index with them, a second module for managing calculation of descriptors for the candidate points of interest, the first module being configured to transmit the candidate points of interest and their index to the second module immediately at the end of the processing of K lines of a strip, with K an integer number greater than or equal to 1 and strictly less than the number of lines per strip.
    Type: Grant
    Filed: January 12, 2017
    Date of Patent: July 28, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Mehdi Darouich, Maria Lepecq
  • Patent number: 10727802
    Abstract: A method for the batch production of acoustic wave filters comprises: synthesizing N theoretical filters, each filter defined by a set of j theoretical resonator(s) having a triplet C0ij,eq, ?rij,eq and ?aij,eq, these parameters grouped into subsets; determining a reference resonator structure for each subset, naturally having a resonant frequency ?r,ref, where ?aij,eq<?r,ref<?rij,eq; determining, for each theoretical resonator, an elementary building block comprising an intermediate resonator R?ij, a parallel reactance Xpij and/or a series reactance Xsij, the intermediate resonator R?ij having a triplet C0ij, ?r,ref and ?a,ref, the parameters C0ij, Xpij and/or Xsij defined so the elementary building block has a triplet: C0ij,eq, ?rij,eq and ?aij,eq; determining the geometrical dimensions of the actual resonators Rij of the filters so they have a capacitance C0ij; producing each actual resonator; associating series and/or parallel reactances with actual resonators in order to form the elementary buildin
    Type: Grant
    Filed: June 29, 2015
    Date of Patent: July 28, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Alexandre Reinhardt, Jean-Baptiste David
  • Patent number: 10725324
    Abstract: A photonic transmitter is provided, including a laser source including a first waveguide made of silicon and a second waveguide made of III-V gain material, the waveguides being separated from each other by a first segment of a dielectric layer; and a phase modulator including a first electrode made of single-crystal silicon and a second electrode made of III-V crystalline material, separated from each other by a second segment of the dielectric layer, where a thickness of the dielectric layer is between 40 nm and 1 ?m, where a thickness of a dielectric material in an interior of the first segment is equal to the thickness of the dielectric layer, and where a thickness of the dielectric material in an interior of the second segment is between 5 nm and 35 nm, a rest being formed by a thickness of semiconductor material.
    Type: Grant
    Filed: July 22, 2019
    Date of Patent: July 28, 2020
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Karim Hassan, Yohan Desieres, Bertrand Szelag