Patents Assigned to Commissariat a l'Energie Atomique et Aux Energies Alternatives
  • Publication number: 20210226240
    Abstract: A unit cell of a fuel cell may include: a membrane-electrode assembly including a proton exchange membrane, an anode electrode fastened to a first face of the proton exchange membrane, a first flow guide plate positioned facing the anode electrode and including at least one flow channel having a fuel inlet zone, a median flow zone and a fuel outlet zone. The anode electrode may have, at the fuel outlet zone, a tolerance to carbon monoxide pollution greater than its average tolerance to carbon monoxide pollution at the median flow zone and at the fuel inlet zone.
    Type: Application
    Filed: May 30, 2018
    Publication date: July 22, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Sylvie ESCRIBANO, Marion CHANDESRIS, Laure GUETAZ, Pascal SCHOTT, Marion SCOHY
  • Publication number: 20210223474
    Abstract: The invention relates to a method for manufacturing a waveguide (2a, 2b) comprising: A supplying of a substrate (1) comprising a stack of a first layer (11) based on a first material on a second layer (12) based on a second material, and at least one sequence successively comprising: An etching of the first material, in such a way as to define at least one pattern (20, 22a) having etching flanks (200, 201), A smoothing annealing assisted by hydrogen in such a way as to smooth the etching flanks (200, 201) of the at least one pattern (20, 22a), A re-epitaxy of the first material on the pattern (20, 22a) based on the first material
    Type: Application
    Filed: December 18, 2020
    Publication date: July 22, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Corrado SCIANCALEPORE, Houssein EL DIRANI, Jean-Michel HARTMANN
  • Publication number: 20210217937
    Abstract: A method is provided for producing a microelectronic device having a subsequent grating of reliefs of which at least one wall is slanted, the method including providing a structure including a base, and an initial grating of reliefs, each relief having at least one proximal end in contact with the base, a distal end, and at least one wall extending between the proximal end and the distal end; and laying the reliefs of the initial grating on one another, by application of at least one stress on the structure, such that walls facing two adjacent reliefs come into contact, thus generating at least one subsequent grating of reliefs of which at least one wall is slanted.
    Type: Application
    Filed: November 18, 2020
    Publication date: July 15, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Stefan LANDIS, Hubert TEYSSEDRE
  • Publication number: 20210216283
    Abstract: This device comprises a fast sampler comprising: a truncated table associating with truncated random numbers rmsb coded on Nmsb bits, the only sample k for which, whatever the number rlsb belonging to the interval [0; 2Nr?Nmsb?1], the following condition is met: F(k?1)<(rmsb, rlsb)?F(k), where: (rmsb, rlsb) is the binary number coded on Nr bits and the Nmsb most significant bits of which are equal to the truncated random number rmsb and the (Nr-Nmsb) least significant bits of which are equal to the number rlsb, Nmsb is an integer number lower than Nr, a module for searching for a received truncated random number rmsb in the truncated table, and able to transmit the sample k, associated, by the truncated table, with the received truncated random number rmsb, by way of random number drawn according to the probability distribution ?.
    Type: Application
    Filed: January 11, 2021
    Publication date: July 15, 2021
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventor: Thomas HISCOCK
  • Patent number: 11062951
    Abstract: A process for fabricating a field-effect transistor includes providing a structure including a first silicon layer and a second layer, made of SiGe alloy, covering the first silicon layer. The method further includes forming a sacrificial gate covered with a hardmask on top of the second layer made of SiGe alloy and etching the second layer made of SiGe alloy, following the pattern of the hardmask in order to delimit an element made of SiGe alloy in the second layer. The method also includes forming spacers on top of the first silicon layer on either side of the sacrificial gate and of the element, removing the sacrificial gate, and enriching the first layer arranged beneath the element in germanium using a germanium condensation process.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: July 13, 2021
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventor: Shay Reboh
  • Patent number: 11063165
    Abstract: An optocoupler is provided, including at least one light source and at least one matrix of photovoltaic cells facing the at least one light source, the at least one light source being configured to receive, at an input, an input electrical signal, and to generate, at an output, according to the input electrical signal, a light signal, sent to the at least one matrix of photovoltaic cells, the at least one matrix of photovoltaic cells being configured to receive, at the input, at least partially the light signal and to deliver, at the output, at least one output electrical signal, at the level of at least two connection pads, and the at least one light source being a matrix of laser diodes.
    Type: Grant
    Filed: August 5, 2019
    Date of Patent: July 13, 2021
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Julien Buckley, Rene Escoffier
  • Patent number: 11063172
    Abstract: A method is provided for producing a device with light emitting/light receiving diodes, including: producing, on a substrate, a stack including first and second doped semiconductor layers; first etching of the stack, forming first openings through the entire thickness of the second layer; producing dielectric portions covering, in the first openings, the side walls of the second layer; second etching of the stack, extending the first openings until reaching the substrate, delimiting the p-n junctions of the diodes; etching extending the first openings into a part of the substrate; producing first electrically conductive portions in the first openings, forming first electrodes of the diodes, and producing second electrodes electrically connected to the second layer; and eliminating the substrate, forming a collimation grid.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: July 13, 2021
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventor: Gabriel Pares
  • Patent number: 11063268
    Abstract: The application relates to a novel module for electrolysis or co-electrolysis of water or of SOFC fuel cell, within which the forces necessary to compress the seals are decoupled from those necessary for the electrical contact elements that ensure the passage of current in the module.
    Type: Grant
    Filed: October 26, 2018
    Date of Patent: July 13, 2021
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Michel Planque, Charlotte Bernard, Guilhem Roux
  • Patent number: 11063177
    Abstract: A process for producing at least two adjacent regions, each comprising an array of light-emitting wires connected together in a given region by a transparent conductive layer, comprises: producing, on a substrate, a plurality of individual zones for growing wires extending over an area greater than the cumulative area of the two chips; growing wires in the individual growth zones; removing wires from at least one zone forming an initial free area to define the arrays of wires, the initial free area comprising individual growth zones level with the removed wires; and depositing a transparent conductive layer on each array of wires to electrically connect the wires of a given array of wires, each conductive layer being separated from the conductive layer of the neighbouring region by a free area. A device obtained using the process of the invention is also provided.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: July 13, 2021
    Assignees: ALEDIA, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Eric Pourquier, Hubert Bono
  • Patent number: 11060860
    Abstract: A method of non-destructively inspecting an adhesively bonded assembly of first, second, and third materials includes generating guided waves in the adhesively bonded assembly and establishing a dispersion curve plot in a first reference frame on the basis of receiving the guided waves. The method further includes comparing the dispersion curve plot with a plurality of reference dispersion curves established in the first reference frame, each of the reference dispersion curves being obtained by generating guided waves in a reference adhesively bonded assembly. Finally, the method includes estimating at least one of the thicknesses of the materials in the adhesively bonded assembly under inspection.
    Type: Grant
    Filed: November 23, 2017
    Date of Patent: July 13, 2021
    Assignees: SAFRAN, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Mathieu Loic Ducousso, Frederic Jenson, Bastien Jacques Chapuis, Guillemette Danielle Joelle Marie Ribay, Laura Taupin
  • Patent number: 11062815
    Abstract: A seal for a glove box panel includes a first face and a second face parallel to each other and designed to come into contact with a profile of the glove box and against an internal face of the panel. The seal includes an internal circumferential edge with a rim projecting beyond the first face.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: July 13, 2021
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Cedric Parrenin, Raphael Bay
  • Publication number: 20210208053
    Abstract: A method for observing a sample by lensless imaging, in which a sample is positioned between a laser diode and an image sensor, the laser diode being supplied with a supply current whose intensity is less than or equal to a critical value. This critical intensity is determined during preliminary operations, during which the intensity is initially greater than a laser threshold of the diode. By observing the image formed at the image sensor, the intensity is decreased until an attenuation of the interference images on the formed image is observed, the critical intensity corresponding to the intensity at which this attenuation is optimum.
    Type: Application
    Filed: December 22, 2016
    Publication date: July 8, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Pierre BLANDIN
  • Publication number: 20210210377
    Abstract: A production method for a semi-conductor-on-insulator type multilayer stack includes ion implantation in a buried portion of a superficial layer of a support substrate, so as to form a layer enriched with at least one gas, intended to form a porous semi-conductive material layer, the thermal oxidation of a superficial portion of the superficial layer to form an oxide layer extending from the surface of the support substrate, the oxidation and the implantation of ions being arranged such that the oxide layer and the enriched layer are juxtaposed, and the assembly of the support substrate and of a donor substrate.
    Type: Application
    Filed: December 16, 2020
    Publication date: July 8, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Shay REBOH, Pablo ACOSTA ALBA
  • Publication number: 20210210229
    Abstract: The invention concerns a liquid metal-cooled fast-neutron nuclear reactor (1), comprising a system (2) for removing at least part of both the nominal power and the residual power of the reactor, which ensures, at the same time: removal of the residual power in a totally passive manner from the initial instant of the accident; removal of the heat through the primary vessel; implementation of a final cold source (container with PCM) other than the sodium/air or NaK/air heat exchangers used in the prior art.
    Type: Application
    Filed: December 9, 2020
    Publication date: July 8, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Paul GAUTHE, Alessandro PANTANO
  • Publication number: 20210210345
    Abstract: A method for forming a layer by cycled epitaxy includes at least one sequence of steps each having a first epitaxial deposition forming a first growth layer portion having a first thickness on a first monocrystalline pattern and a second growth layer portion having a second thickness on a second non-monocrystalline pattern, the second thickness being greater than the first thickness, and a second epitaxial deposition forming a first sacrificial layer portion having a third thickness on the first growth layer portion and a second sacrificial layer portion having a fourth thickness on the second growth layer portion. The first and second growth layer portions have an additional element content, greater than the additional element content present in the first and second sacrificial layer portions. The sequence also includes etching the whole of the third and fourth thicknesses and stopping before having consumed the whole of the first thickness.
    Type: Application
    Filed: December 18, 2020
    Publication date: July 8, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Vincent MAZZOCCHI, Sylvain MAITREJEAN
  • Publication number: 20210210798
    Abstract: A device triggers thermal runaway of an electrochemical accumulator, including a flexible package that contains at least once electrochemical cell. A part of the current collectors that form the output terminals of the accumulator pass through the flexible package. The device includes two electrical current conducting elements, each respectively in electrical contact with the exterior of a part of a metal layer of the flexible package or of the metal housing, and an electrical power supply independent from the accumulator. The electrical power supply is designed to drive a current, referred to as a heating current, between the two elements so as to heat up the flexible package or the housing of the accumulator by Joule effect.
    Type: Application
    Filed: December 30, 2020
    Publication date: July 8, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Rémi VINCENT, Maxime HUBERT
  • Publication number: 20210210357
    Abstract: The invention relates to a method for forming a porous portion in a substrate, an implantation of ions in at least one region of a layer, for example based on a semiconductor material, so as to form a portion enriched with at least one gas in the implanted region, and then a laser annealing of the nanosecond type so as to form a porous portion. The use of the ion implantation makes it possible to dissociate the deposition of the layer based on semiconductor material from the incorporation of gas. A great variety of porous structures can be obtained by the method. These porous structures can be adapted for numerous applications according to the properties sought.
    Type: Application
    Filed: December 17, 2020
    Publication date: July 8, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Shay REBOH, Pablo ACOSTA ALBA
  • Patent number: 11054361
    Abstract: A method for analyzing sample cells reacting with at least one specific marker, includes providing a reference sample and an active sample and providing a set (E+) of cells declared positive from among the active sample cells. The method further includes determining a vector coefficient (?) from the active sample and from the set (E+) and determining at least one set of positive cells in the reference sample as a function of the vector coefficient (?). A rate of false positives (?) is calculated in the reference sample from the number of positive cells of the reference sample.
    Type: Grant
    Filed: December 11, 2015
    Date of Patent: July 6, 2021
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Josselin Garnier, Françoise Poggi, Gilles Defaux, Antonio Cosma, Robert Quach
  • Patent number: 11056340
    Abstract: A process for attaching a first substrate to a second substrate by direct bonding includes the successive steps of: a) providing the first and second substrates, each comprising a first surface and an opposite second surface, b) bonding the first substrate to the second substrate by direct bonding between the first surfaces of the first and second substrates, step b) being carried out under a first gaseous atmosphere having a first relative humidity level denoted by ?1, and c) applying a thermal annealing treatment to the bonded first and second substrates at a thermal annealing temperature of between 20° C. and 700° C., step c) being carried out under a second gaseous atmosphere having a second humidity level denoted by ?2, satisfying ?2??1.
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: July 6, 2021
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Frank Fournel, Frederic Mazen
  • Patent number: 11053599
    Abstract: The application relates to a process for operating in starting mode or in stand-by mode a unit, termed power-to-gas unit, comprising a number N of reactors (1) with a stack of elemental electrolysis cells of solid oxide type (SOEC), the cathodes of which are made of methanation reaction catalyst material(s).
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: July 6, 2021
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Aymeric Brunot, Vincent Lacroix