Abstract: An electromechanical conversion device includes a resonant electrical circuit comprising an inductance and a capacitor, the capacitor including at least a first electrode and a second electrode; and a mechanical oscillator including at least one microbeam formed in a membrane, the first and second electrodes being located side by side and the first electrode of the capacitor being located on a face of the microbeam so that the electrical capacitance of the capacitor varies when the mechanical oscillator oscillates; device wherein the inductance includes an electric track of very low thickness made on the membrane and made of a superconductive material chosen so as to obtain an electric track with a high kinetic inductance.

Abstract: A transistor device including a layer of AlGaN extending between a source and drain of the device; a GaN channel layer extending under the AlGaN layer; a gate stack including a layer of p-doped gallium nitride; and a layer of p-doped InGaN of at least 5 nm in thickness positioned between the AlGaN layer and the p-doped gallium nitride layer, the InGaN layer having a length greater than a length of the gate stack.

Abstract: The present description concerns a radio transmission device including a plurality of elementary cells, each including a transmit circuit and an antenna connected to an output terminal of the transmit circuit, each transmit circuit including a power detector coupled to its output terminal, the device further including a control circuit configured to: a) simultaneously activating in transmit mode a first cell, deactivating in transmit mode a second cell, and reading from an output node of the power detector of the second cell a signal representative of a radio frequency power received on the output terminal of the second cell via the antenna of the second cell; and b) deducing from the signal read at step a) information relative to the state of the device or of its environment.

Abstract: A method for estimating a dose rate, based on measurements taken by a gamma camera, the gamma camera defining an observation field. The estimated dose rate originates from irradiating sources located in the observation field, the irradiating sources emitting ionizing electromagnetic radiation, and the observation field is discretized into a mesh. The gamma camera comprises pixels, each pixel being configured to detect the ionizing electromagnetic radiation, during an acquisition time, and form an energy spectrum therefrom such that together the pixels allow a position of the irradiating sources in the observation field to be obtained in one energy band or in a plurality of energy bands. The method comprising estimating a dose rate generated, at the gamma camera, by points of the mesh.

Abstract: The present invention [relates to] a regulation system (28) for a multi-active bridge converter (10) with hybrid supply, comprising: an input current port (20) comprising an H-shape switch bridge (30) having a switch (T1) controlled by a first law having a first duty cycle, at least one output voltage port (22, 24) comprising an H-shape switch bridge (38, 40), one switch (T 21, T 31) of which is controlled by a second law which is phase-shifted with respect to the first law, the regulation system (28) regulates the converter (10) to a setpoint comprising a setpoint current value for the current of the current port (20) and a setpoint voltage value for a voltage port (22, 24).

Abstract: An automated system for regulating a patient's blood glucose, including a blood glucose sensor, an insulin injection device, and a processing and control unit.

Abstract: A method of determining, for each cell of a battery of series-coupled cells, an indicator QCi representative of the charge stored in the cell, this method comprising: a) at the end of a phase of partial discharge or charge of the battery, measuring the voltage Ui across each cell of the battery; b) calculating, for each cell, an interpolation coefficient Xi from a value C_rate representative of the discharge or charge rate of the battery during said partial discharge or charge phase, and from the voltages Ui measured at step a); and c) determining, for each cell, from the interpolation coefficient Xi calculated for the cell at step b) and from a quantity Qcm representative of the charge stored in the battery, said indicator QCi representative of the charge stored in cell.

Abstract: A device including a first transistor, having a gate region partially penetrating into a gallium nitride layer, and a second transistor located inside of the gate region of the first transistor.

Abstract: A random number generator circuit includes a noise source capable of providing a noise signal that varies randomly; and a circuit for extracting the noise signal including an edge detector configured to produce from the noise signal an analogue signal including voltage pulses, each voltage pulse corresponding to a rising or falling edge of the noise signal, and an analogue-to-digital converter configured to generate a random bit sequence from the analogue signal.

Abstract: The circuit is connected to the quantum circuit by bias lines and includes a digital-to-analog converter-DAC delivering an analog voltage (Ve); memory cells, connected in parallel at the output of the DAC, each memory cell including a switch (I1, I2, I3, I4) and a capacitor (C1, C2, C3, C4), the capacitor storing a level of potential at which to maintain a bias line connected to the output of the memory cell; and, a device for generating control signals generating, in synchronization with the DAC, a control signal for each switch of each memory cell, the control signal, a value of the capacitor of a memory cell being selected so as to make negligible a parasitic capacitor affecting the bias line connected to said memory cell and which runs parallel to a neighboring bias line.

Abstract: The present description concerns a transmitarray or reflectarray cell (105), comprising at least two switches made of a phase-change material.

Abstract: A High Performance Computing (HPC) machine comprising several computing processors interconnected through at least one network, and at least one primary management unit, in a vicinity of at least one computing processor. The at least one primary management unit powers on the at least one processor. The at least one primary management unit (comprises a random data item generator, and a secure storage memory for storing a secret data item, common to all computing processors of the HPC machine, and used for authentication of each computing processor of the HPC machine for data exchange in the HPC machine.

Abstract: The present invention relates to an electronic device comprising: a first electrode comprising a contact, a ferroelectric subassembly having a ferroelectric polarization, a spin polarization subassembly which spin-polarizes an incident current and comprises a layer of ferromagnetic or ferrimagnetic material, an interfacing subassembly which is arranged between the two subassemblies and converts the spin current into a charge current, the ferroelectric subassembly and the interfacing subassembly having a contact, and a second electrode which comprises two contacts and delimits the polarization subassembly, the contact of the first electrode changing the state of polarization by applying a potential difference between this contact and another contact.

Abstract: An electronic system includes an electronic device having a stack of layers, the stack including a first electrode, a subassembly with electrically controllable remanent states, a two-dimensional electron gas, a magnetic subassembly comprising at least one magnetic layer, and a second electrode having two first contacts and a second contact. The system also includes a writing device writing remanent states by applying an electric field between the two electrodes, and a Hall-effect reading device reading the remanent state by applying a current between the two first contacts and by measuring the voltage between the second contact and a reference potential.

Abstract: A method for manufacturing a microelectronic device including resistive memory points, a first portion of the memory points forming a physical unclonable function, the memory points of the first portion forming a PUF zone, a second portion of the memory points providing a memory function, the memory points of the second forming a memory zone, the method including providing a support including a first electrode layer and an active oxide resistive memory layer; etching the active oxide resistive memory layer in the PUF zone; etching the active oxide resistive memory layer in the memory zone, the etching in the memory zone producing a dispersion of roughness of the oxide layer less than the dispersion of roughness produced by the etching in the PUF zone; depositing a second electrode layer; etching the second electrode layer, the active oxide layer and the first electrode layer to define the memory points.

Abstract: A semiconductor structure for radio frequency applications includes a support substrate made of silicon and comprising a mesoporous layer, a dielectric layer arranged on the mesoporous layer and a superficial layer arranged on the dielectric layer. The mesoporous layer comprises hollow pores, the internal walls of which are mainly lined with oxide. The mesoporous layer has a thickness between 3 and 40 microns and a resistivity greater than 20 kohm·cm over its entire thickness. The support substrate has a resistivity between 0.5 and 4 ohm·cm. The invention also relates to a method for producing such a semiconductor structure.

Abstract: The invention relates to a method for depositing nano-objects on the surface of a gel comprising the steps of: a) providing a gel having a polymer matrix and a solvent within the polymer matrix, the polymer matrix forming a three-dimensional network which is capable of swelling in the presence of the solvent, wherein the solubility of the polymer matrix in the solvent at 1 bar and 25° C. is less than 1 g/l, wherein the gel has a rigidity gradient on the micrometer scale of less than 10%, then b) depositing nano-objects on the surface of the gel, the nano-objects having a mean diameter greater than or equal to the mean diameter of the pores of the gel, then c) evaporating the solvent from the gel at least until the content of solvent no longer varies over time, under the proviso that, at the start of evaporation, the content of mineral salts in the solvent is less than 6 g/l, the gel capable of being obtained and the uses thereof.

Abstract: A SPAD-type photodiode comprising a depletion area in a first portion of a semiconductor substrate of a first conductivity type and further comprising a gate electrically-insulated from the substrate, extending into the substrate from an upper surface of the substrate, and separating the first portion of the substrate from a second portion. The photodiode further comprises a first region of the second conductivity type extending from the upper surface of the substrate into the second portion.

Abstract: A hydraulic cylinder, in particular for a hydrogen tank pressurization installation, including a cylindrical body of longitudinal axis having a first low-pressure cylindrical body portion and a second high-pressure cylindrical body portion, a piston being mounted in the first cylindrical body portion and being mounted at a first end of a piston rod slidably extending in the second cylindrical body portion. A second end of the rod opposite the first end carries a removable cartridge slidably sealed in the second part of the cylindrical body, the second part of the cylindrical body being sealed by a removable shutter member arranged longitudinally opposite the removable cartridge.

Abstract: A method for rectifying a polymer film including the steps of: a) providing a first substrate including a front surface, the front surface having a surface energy less than approximately 22 mJ/m2, b) spreading a thermoplastic polymer on the front surface leading to the formation of a polymer film and at least one dewetted zone of the front surface, c) providing a second substrate including a non-stick surface, d) bonding the polymer film and the non-stick surface leading to the formation of a bonding interface having an adhesion energy lower than the adhesion energy between the polymer film and the front surface, e) applying a creep treatment so that the at least one dewetted zone of the front surface is covered by creep of the polymer film, and f) disassembly at the bonding interface so as to obtain the front surface completely covered by the rectified polymer film.