Abstract: A substrate processing apparatus has an indexer block and a processing block. One side of the processing block has a vertical stack of a plurality of top surface cleaning units and the other side of the processing block has a vertical stack of a plurality of back surface cleaning units. Reversing units for reversing the substrate W are provided one above the other between the indexer block and the processing block. For example, one reversing unit is used for reversing the substrate before a back surface cleaning processing by the back surface cleaning unit or for other purposes, and the other reversing unit is used for placing the substrate W after a top surface cleaning processing by the top surface cleaning unit or for other purposes.

Abstract: A flash heating part in a heat treatment apparatus includes 30 built-in flash lamps, and irradiates a semiconductor wafer held by a holder in a chamber with a flash of light. Thirty switching elements are provided in a one-to-one correspondence with the 30 flash lamps. Each of the switching elements defines the waveform of current flowing through a corresponding one of the flash lamps by intermittently supplying electrical charge thereto. Radiation thermometers measure an in-plane temperature distribution of the semiconductor wafer during flash irradiation. Based on the results of measurement with the radiation thermometers, a controller individually controls the operations of the 30 switching elements to individually define the light emission patterns of the 30 flash lamps.

Abstract: A substrate processing apparatus has an indexer block and a processing block. One side of the processing block has a vertical stack of a plurality of top surface cleaning units and the other side of the processing block has a vertical stack of a plurality of back surface cleaning units. Reversing units for reversing the substrate W are provided one above the other between the indexer block and the processing block. For example, one reversing unit is used for reversing the substrate before a back surface cleaning processing by the back surface cleaning unit or for other purposes, and the other reversing unit is used for placing the substrate W after a top surface cleaning processing by the top surface cleaning unit or for other purposes.

Abstract: A substrate treatment method includes a substrate holding unit which horizontally holds a substrate; a rotating unit which rotates the substrate held by the substrate holding unit about a vertical axis; and a first nozzle having an opposing face to be opposed to a lower surface of the substrate inward of a peripheral portion of the substrate in spaced relation to the lower surface of the substrate during rotation of the substrate by the rotating unit and a treatment liquid spout provided in the opposing face for filling a space defined between the lower surface of the substrate and the opposing face with a treatment liquid spouted from the treatment liquid spout to keep the space in a liquid filled state; wherein the treatment liquid spreads outwardly over the lower surface of the substrate and further, flows around to a peripheral portion of an upper surface of the substrate.

Abstract: In a substrate processing apparatus, a temperature of an anti-static liquid having electrical resistivity which gradually decreases as a liquid temperature increases is adjusted by a temperature adjustment part and the electrical resistivity of the anti-static liquid is higher than the electrical resistivity of a processing liquid (SPM liquid). After that, a plurality of substrates are immersed in the anti-static liquid inside the anti-static liquid storage part and both main surfaces of each substrate entirely conic into contact with the anti-static liquid. This gradually removes static electricity from the substrate. Then, the SPM liquid is supplied onto an upper surface of the substrate to thereby perform an SPM process. In the SPM process, it is thereby possible to prevent a large amount of electric charges from sharply moving from the substrate to the SPM liquid and prevent any damage to the substrate.

Abstract: A drawing apparatus accepts a selection manipulation for selecting the type of shape of a light outgoing ratio function defining a relationship between the position of modulation units included in an optical unit as seen in the direction of the arrangement of the modulation units and a light outgoing ratio from among a plurality of shape type candidates. The drawing apparatus then adjusts the light outgoing ratio of each of the modulation units in accordance with the accepted shape type. While emitting a beam of drawing light of a strip-shaped cross-sectional configuration from the optical unit, the drawing apparatus moves the optical unit relative to a substrate in a direction orthogonal to the direction of the longer dimension of the strip-shaped cross section of the drawing light beam to perform a drawing process on the substrate.

Abstract: The ferroelectric substrate 11 of ferroelectric crystals, while being supported by the support plate 14 which is thicker than the ferroelectric substrate 11, is integrated with the support plate 14 by letting the junction 13 mediate between one major surface S1A of the ferroelectric substrate 11 and one major surface S1B of the support plate 14, and therefore, it is possible through the flat surface polishing to perform thinning of the ferroelectric substrate 11, namely, the ferroelectric crystals, and as a result, it is possible to obtain the thin periodically poled structure. By the voltage application method, the domain inverted region is formed in the ferroelectric substrate 11 which is made thin.

Abstract: A semiconductor wafer in which a carbon thin film is formed on a surface of a silicon substrate implanted with impurities is irradiated with flash light emitted from flash lamps. Absorbing the flash light causes the temperature of the carbon thin film to increase. The surface temperature of the silicon substrate implanted with impurities is therefore increased to be higher than that in a case where no thin film is formed, and the sheet resistance value can be thereby decreased. When the semiconductor wafer with the carbon thin film formed thereon is irradiated with flash light in high concentration oxygen atmosphere, since the carbon of the thin film is oxidized to be vaporized, removal of the thin film is performed concurrently with flash heating.

Abstract: Switching between highlighting and unhighlighting of an object determined as adopted and switching between highlighting and unhighlighting of an object determined as not adopted are performed individually and independently by manipulation of an on/off selectable button. This allows switching to be freely performed between the following states in which: objects are highlighted regardless of whether the objects are adopted or not; only an object determined as adopted is highlighted; only an object determined as not adopted is highlighted; and objects are not highlighted regardless of whether the objects are adopted or not. A user visually judges whether the result of the adoption/non-adoption process is proper or not easily while switching between these displays.

Abstract: Scan step (S3) for moving a nozzle with etching liquid discharged therefrom is carried out such that etching liquid application position toward the rotating substrate moves from the edge portion toward the center portion of the principal face of the substrate. Thereafter, center discharging step (S4) for continuing the supply of the etching liquid toward the principal face of the substrate under the condition that the application position is positioned at the center portion of the principal face of the substrate W is conducted. Moving velocity of the liquid application position in the scan step (S3) is determined in accordance with supply condition of the etching liquid toward the substrate under the condition that the liquid application position is positioned at the center portion of the principal face of the substrate.

Abstract: A capacitor, a coil, a flash lamp, and a switching element such as an IGBT are connected in series. A controller outputs a pulse signal to the gate of the switching element. A waveform setter sets the waveform of the pulse signal, based on the contents of input from an input unit. With electrical charge accumulated in the capacitor, a pulse signal is output to the gate of the switching element so that the flash lamp emits light intermittently. A change in the waveform of the pulse signal applied to the switching element will change the waveform of current flowing through the flash lamp and, accordingly, the form of light emission, thereby resulting in a change in the temperature profile for a semiconductor wafer.

Abstract: A negative-electrode active material layer having a line-and-space structure is formed by applying an application liquid containing a negative-electrode active material in stripes on a surface of a negative-electrode current collector using a nozzle-scan coating method and drying the application liquid (Steps S101, S102). Subsequently, by a spin coating method, an application liquid containing a solid electrolyte material is applied (Step S103) and heated at a temperature lower than a glass-transition temperature of the electrolyte material to be dried. Further, an application liquid containing a positive-electrode active material is applied (Step S105) and a positive-electrode current collector is laminated (Step S106) and, then, a laminated body is heated to or above the glass-transition temperature of the electrolyte material to cause the solid electrolyte to flow and adhere to the active material layers.

Abstract: As a spatial light modulator 35 is disposed between a wavelength conversion part 315 and an exit surface 311b in a ferroelectric crystal substrate 31, only zeroth-order light which is at a particular wavelength is guided to a substrate while laser light from the wavelength conversion part 315 is being modulated, whereby a pattern corresponding to LSI data is drawn. Further, the spatial light modulator 35 is disposed together with the wavelength conversion parts 314 and 315 inside the ferroelectric crystal substrate 31.

Abstract: A method for treating substrates with treating liquids, using a treating tank for storing the treating liquids, a holding mechanism for holding the substrates and placing the substrates in a treating position inside the treating tank, a first and a second treating liquid supply device, a temperature control device, and a control device. A first treating liquid is supplied into the treating tank, then a second treating liquid of lower surface tension and higher boiling point than the first treating liquid, is supplied into the treating tank, and placed in a temperature range above the boiling point of the first treating liquid and below the boiling point of the second treating liquid, and then controlling the second treating liquid supply device to replace the first treating liquid stored in the treating tank with the second treating liquid, and controlling the temperature control device to maintain the second treating liquid in the same said temperature range.

Abstract: A substrate processing apparatus includes a first processing chamber and a second processing chamber, a first substrate holding unit that holds a substrate in the first processing chamber, a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit, a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate, and a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.

Abstract: A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface.

Abstract: In a processing block, a plurality of back surface cleaning units and a main robot are provided. The main robot is provided between the back surface cleaning units provided on one side of the processing block and the back surface cleaning units provided on the other side of the processing block. A reversing unit used to reverse a substrate and a substrate platform used to transfer and receive substrates between an indexer robot and the main robot are provided adjacent to each other in the vertical direction between the indexer robot and the processing block. The main robot transports substrates among the plurality of back surface cleaning units, the substrate platform, and the reversing unit.

Abstract: A susceptor of a holding part for holding a semiconductor wafer includes a disc-shaped holding plate, an annular shaped guide ring, and a plurality of support pins. The guide ring has an inside diameter greater than the diameter of the semiconductor wafer and is installed on the peripheral portion of the top face of the holding plate. The guide ring has a tapered surface along the inner circumference. The semiconductor wafer before irradiated with flash light is supported by the support pins. The annular shape of the guide ring increases the contact area when the semiconductor wafer that has jumped off the susceptor and fallen when irradiated with flash light collides with the guide ring, thus reducing the impact of the collision and preventing cracks in the substrate.

Abstract: A susceptor that holds a semiconductor wafer placed thereon is capable of moving up and down inside a chamber. For preheating with a halogen lamp, the susceptor moves to a preheating position. The preheating position is a height of the susceptor that achieves the most uniform in-plane illumination distribution of light emitted from the halogen lamp and applied to the semiconductor wafer. After the preheating is finished, the susceptor moves to a flash heating position for irradiation with a flash from a flash lamp. The flash heating position is a height of the susceptor that achieves the most uniform in-plane illumination distribution of a flash emitted from the flash lamp and applied to the semiconductor wafer.

Abstract: A substrate treating system includes a coating apparatus having a resist coating unit, an exposing apparatus having an exposing machine and a heat-treating unit, and a controller for controlling the resist coating unit, exposing machine and heat-treating unit. The controller coordinates schedules of treatment in the coating apparatus and exposing apparatus, such that the coating apparatus can operate efficiently despite an increase in the processing time of the exposing machine.