Patents Assigned to Daisankasei Co., Ltd.
  • Patent number: 9492842
    Abstract: Provided is: a cell culture membrane, which is free from materials derived from living organisms, can easily be industrially mass-produced, exhibits superior long-term storage properties and chemical resistance, has excellent cell adhesion properties and long-term culture properties and is capable of replicating a cell adhesion morphology that is similar to that of collagen derived from living organisms and being used for conventional cell cultivation. Also provided are a cell culture substrate, and a method for manufacturing the cell culture substrate. In the present invention, as a cell adhesion layer, a polymer membrane represented by formula (I) is formed on the base of a cell culture substrate so as to have a membrane thickness equal to or greater than 0.2 ?m (in the formula, R1 and R2 represent a —(CH2)n—NH2 moiety (n is an integer of 1-10 inclusive.) or H, with at least one of R1 and R2 being a —(CH2)n—NH2 moiety. Moreover, l and m are positive integers expressing polymerization degree).
    Type: Grant
    Filed: June 22, 2012
    Date of Patent: November 15, 2016
    Assignees: KISCO LTD., DAISANKASEI CO., LTD., The University of Tokyo
    Inventors: Yasuo Yoshimoto, Kentaro Kamimae, Yuki Tanabe, Taku Oguni, Takashi Inoue, Tsutomu Mochizuki, Makoto Hirama, Teruo Fujii, Hiroshi Kimura, Hideto Tozawa
  • Publication number: 20140212974
    Abstract: Provided is: a cell culture membrane, which is free from materials derived from living organisms, can easily be industrially mass-produced, exhibits superior long-term storage properties and chemical resistance, has excellent cell adhesion properties and long-term culture properties and is capable of replicating a cell adhesion morphology that is similar to that of collagen derived from living organisms and being used for conventional cell cultivation. Also provided are a cell culture substrate, and a method for manufacturing the cell culture substrate. In the present invention, as a cell adhesion layer, a polymer membrane represented by formula (I) is formed on the base of a cell culture substrate so as to have a membrane thickness equal to or greater than 0.2 ?m (in the formula, R1 and R2 represent a —(CH2)n—NH2 moiety (n is an integer of 1-10 inclusive.) or H, with at least one of R1 and R2 being a —(CH2)n—NH2 moiety. Moreover, l and m are positive integers expressing polymerization degree).
    Type: Application
    Filed: June 22, 2012
    Publication date: July 31, 2014
    Applicants: KISCO LTD., THE UNIVERSITY OF TOKYO, DAISANKASEI CO., LTD.
    Inventors: Yasuo Yoshimoto, Kentaro Kamimae, Yuki Tanabe, Taku Oguni, Takashi Inoue, Tsutomu Mochizuki, Makoto Hirama, Teruo Fujii, Hiroshi Kimura, Hideto Tozawa
  • Patent number: 7763318
    Abstract: A method for improving the heat stability of polyparaxylylene and a derivative film thereof to improve the heat resistance of the polyparaxylylene and the derivative film thereof without deteriorating deposition characteristics or profitability, and a polyparaxylylene derivative whose heat resistance is improved are provided. When the polyparaxylylene or the derivative film thereof represented by a below-described general formula 1 is formed by a chemical vapor deposition method, an amino-(2.2)-paracyclophane compound represented by a below-described general formula 3 is mixed in a (2.2)-paracyclophane compound represented by a below-described general formula 2 to form a film. (In the formula 1, X1 and X2 designate hydrogen, lower alkyl or halogen. X1 and X2 may be the same or different. n represents a degree of polymerization.) (In the formula 2, X1 and X2 have the same meanings as those of the formula 1.) (In the formula 3, X3 designates hydrogen or a lower alkyl group.
    Type: Grant
    Filed: December 19, 2003
    Date of Patent: July 27, 2010
    Assignee: Daisankasei Co., Ltd.
    Inventors: Hiroshi Maruyama, Tsutomu Mochizuki, Takashi Inoue
  • Publication number: 20100034970
    Abstract: A chemical vapor deposition apparatus includes a charging section 10 for charging a feedstock material for vapor deposition, a decomposition oven 2 for decomposing a feedstock material for vapor deposition, an opening/closing valve 4 for interconnecting the charging section 10 and the decomposition oven 2, and a polymerization section 3 for polymerizing the feedstock material decomposed by the decomposition oven for depositing a coating film on the surface of a substrate. The feedstock material for vapor deposition charged into the charging section 10 is vaporized, and the so vaporized feedstock material is delivered to the decomposition oven 2 by opening the opening/closing valve 4 to deposit the coating film.
    Type: Application
    Filed: July 28, 2006
    Publication date: February 11, 2010
    Applicants: DAISANKASEI CO., LTD., KISCO LTD.
    Inventors: Tsutomu Mochizuki, Takashi Inoue, Kazuyoshi Uetake
  • Publication number: 20090042295
    Abstract: A cell culture substrate which is durable and which can be readily produced in commercial scale at a low cost, and its production method are provided. The cell culture substrate comprises a substrate and a layer formed by surface modification, which comprises a polymer containing amino group produced by reacting a polymer represented by the following formula (II): (wherein n is 0 or a positive integer, and m is a positive integer, the n and m representing degree of polymerization) formed by chemical vapor deposition of formyl[2.2]paracyclophane represented by the following formula (I): (wherein k is 0 or 1) with a polymer having at least one amino group (—NH2) capable of forming Schiff base in its monomer. The production method of the cell culture substrate comprises the step of synthesizing such polymer on the substrate.
    Type: Application
    Filed: August 8, 2007
    Publication date: February 12, 2009
    Applicants: KISHIMOTO SANGYO CO., LTD., DAISANKASEI CO., LTD., THE UNIVERSITY OF TOKYO
    Inventors: Shin Ohya, Takashi Inoue, Takatoki Yamamoto, Teruo Fujii, Yasuyuki Sakai, Masaki Nishikawa, Hitomi Sakai, Hirosuke Naruto
  • Publication number: 20070105997
    Abstract: A method for improving the heat stability of polyparaxylylene and a derivative film thereof to improve the heat resistance of the polyparaxylylene and the derivative film thereof without deteriorating deposition characteristics or profitability, and a polyparaxylylene derivative whose heat resistance is improved are provided. When the polyparaxylylene or the derivative film thereof represented by a below-described general formula 1 is formed by a chemical vapor deposition method, an amino-(2.2)-paracyclophane compound represented by a below-described general formula 3 is mixed in a (2.2)-paracyclophane compound represented by a below-described general formula 2 to form a film. (In the formula 1, X1 and X2 designate hydrogen, lower alkyl or halogen. X1 and X2 may be the same or different. n represents a degree of polymerization.) (In the formula 2, X1 and X2 have the same meanings as those of the formula 1.) (In the formula 3, X3 designates hydrogen or a lower alkyl group.
    Type: Application
    Filed: December 19, 2003
    Publication date: May 10, 2007
    Applicant: DAISANKASEI CO., LTD.
    Inventors: Hiroshi Maruyama, Tsutomu Mochizuki, Takashi Inoue
  • Patent number: 6291072
    Abstract: A semiconductor device is provided with an interlayer insulating film consisting essentially of poly-&agr;,&agr;-difluoroparaxylylene. The interlayer insulating film can have a low relative dielectric constant of from 2.1 to 2.7.
    Type: Grant
    Filed: January 12, 1999
    Date of Patent: September 18, 2001
    Assignees: Kishimoto Sangyo Co., Ltd., Daisankasei Co., Ltd.
    Inventors: Hisao Kimoto, Tsutomu Mochizuki