Abstract: There is provided a solution containing lithium and at least one of a niobium complex and a titanium complex, excellent in storage stability, and suitable for forming a coating layer capable of improving battery characteristics of an active material, and a related technique, which is the solution containing lithium, at least one of a niobium complex and a titanium complex, and ammonia, wherein an amount of the ammonia in the solution is 0.2 mass % or less.
Type:
Application
Filed:
June 28, 2017
Publication date:
July 25, 2019
Applicant:
DOWA ELECTRONICS MATERIALS CO., LTD.
Inventors:
Yoshiaki AIKI, Toshihiko UEYAMA, Koji TANOUE
Abstract: In a fine silver particle dispersing solution wherein 30 to 75% by weight of fine silver particles, which are coated with an organic acid having a carbon number of 5 to 8 or a derivative thereof and which have an average particle diameter of 1 to 100 nm, are dispersed in a water-based dispersion medium which is a solvent containing water as a main component, the fine silver particle dispersing solution containing ammonia and nitric acid, there is added 0.15 to 0.6% by weight of a surface regulating agent, which preferably contains a polyether-modified polydimethylsiloxane and a polyoxyethylene alkyl ether or a polyether, or 0.005 to 0.6% by weight of an antifoaming agent which is preferably a silicone antifoaming agent.
Abstract: An iron powder and method of making an iron powder. The method includes a step of neutralizing an acidic aqueous solution containing a trivalent iron ion and a phosphorus-containing ion, with an alkali aqueous solution, so as to provide a slurry of a precipitate of a hydrated oxide, or a step of adding a phosphorus-containing ion to a slurry containing a precipitate of a hydrated oxide obtained by neutralizing an acidic aqueous solution containing a trivalent iron ion with an alkali aqueous solution. A silane compound is added to the slurry so as to coat a hydrolysate of the silane compound on the precipitate of the hydrated oxide. The precipitate of the hydrated oxide after coating is recovered through solid-liquid separation, the recovered precipitate is heated to provide iron particles coated with a silicon oxide, and a part or the whole of the silicon oxide coating is dissolved and removed.
Abstract: Provided is a method of manufacturing a semiconductor optical device, which makes it possible to reduce the thickness of a semiconductor optical device including InGaAsP-based III-V compound semiconductor layers containing at least In and P to a thickness smaller than that of conventional devices, and provide a semiconductor optical device. The method of manufacturing a semiconductor optical device includes a step of forming a semiconductor laminate 30 on the InP growth substrate; a step of bonding the semiconductor laminate 30 to the support substrate 80 formed from a Si substrate, with at least the metal bonding layer 70 therebetween; and a step of removing the InP growth substrate 10.
Abstract: An object of the present invention is to provide metal powder that can be used to form an external electrode, which is excellent in solder wettability and solder leach resistance while having a layer structure with fewer layers than in the related art and, furthermore, is excellent in electrical conductivity. This silver-coated alloy powder comprises a coating layer on a surface of an alloy core particle containing copper, nickel, zinc, and inevitable impurities, the coating layer containing silver.
Abstract: A bonding material of a silver paste includes: fine silver particles having an average primary particle diameter of 1 to 50 nanometers, each of the fine silver particles being coated with an organic compound having a carbon number of not greater than 8, such as hexanoic acid; silver particles having an average primary particle diameter of 0.5 to 4 micrometers, each of the silver particles being coated with an organic compound, such as oleic acid; a solvent containing 3 to 7% by weight of an alcohol and 0.3 to 1% by weight of a triol; a dispersant containing 0.5 to 2% by weight of an acid dispersant and 0.01 to 0.1% by weight of phosphate ester dispersant; and 0.01 to 0.
Abstract: A wafer group facilitates securing uniformity of products manufactured from the wafer group whose composition varies among wafers. A technique excludes uncertain factors in forming OF, forming OF with extremely high probability and extremely high accuracy, the wafer group being constituted by a plurality of wafers obtained from the same ingot, with all wafers having an orientation flat (OF), wherein the wafer group is constituted by 70 or more wafers, and in the OF orientation accuracy of the wafer group represented by an angle, the OF orientation accuracy in each wafer is within ±0.010°.
Abstract: Provided is a III nitride semiconductor light emitting device with improved reliability capable of maintaining light output power reliably as compared with conventional devices, and a method of producing the same. The III-nitride semiconductor light-emitting device comprising: a light emitting layer, a p-type electron blocking layer, a p-type contact layer, and a p-side electrode in this order. The p-type contact layer has a first p-type contact layer co-doped with Mg and Si in contact with the p-type electron blocking layer and a second p-type contact layer doped with Mg in contact with the p-side electrode.
Abstract: Provided is a method of producing a III nitride semiconductor light-emitting device having an n-type semiconductor layer, a light emitting layer, a barrier layer, and a p-type semiconductor layer. The p-type semiconductor layer is formed by forming an electron blocking layer on the light emitting layer; supplying a carrier gas containing nitrogen to a surface of the electron blocking layer; and forming a second p-type contact layer made of AlyGa1-yN on the electron blocking layer after the nitrogen carrier gas supply step. The second p-type contact formation step is performed using a carrier gas containing hydrogen. Source gases of Al and Ga are supplied to form a first p-type contact layer made of AlxGa1-xN with a thickness of more than 0 nm and 30 nm or less directly on the electron blocking layer and directly under the second p-type contact layer.
Abstract: A silver powder, wherein the silver powder satisfies D50-IPA>D50-W, where in measurement of a volume-based particle size distribution of the silver powder by a laser diffraction particle size distribution analysis, D50-IPA (?m) is a cumulative 50% point of particle diameter of the silver powder when isopropyl alcohol (IPA) is used as a measurement solvent for dispersing the silver powder, and D50-W (?m) is a cumulative 50% point of particle diameter of the silver powder when water is used as a measurement solvent for dispersing the silver powder, and wherein a phosphorus content in the silver powder is 0.01% by mass or more but 0.3% by mass or less.
Abstract: There are provided a bonding material, which can prevent voids from being generated in a silver bonding layer by preventing the entrainment of bubbles during the formation of a coating film even if the coating film is thickened, and a bonding method using the same. The bonding material of a silver paste includes fine silver particles, a solvent and an addition agent, wherein the solvent contains a first solvent of a diol, such as octanediol, and a second solvent which is a polar solvent (preferably one or more selected from the group consisting of dibutyl diglycol, hexyl diglycol, decanol and dodecanol) having a lower surface tension than that of the first solvent and wherein the addition agent is a triol.
Type:
Application
Filed:
April 25, 2017
Publication date:
April 25, 2019
Applicant:
Dowa Electronics Materials Co., Ltd.
Inventors:
Satoru Kurita, Tatsuro Hori, Keiichi Endoh, Hiromasa Miyoshi
Abstract: A silver powder, including: an organic substance on a surface of the silver powder, the organic substance containing at least one carboxyl group and at least one hydroxyl group in one molecule of the organic substance, wherein a ratio of (Casson yield value/BET specific surface area) is 500 or less, where the Casson yield value is a Casson yield value of a conductive paste and the BET specific surface area is a BET specific surface area of the silver powder, where the conductive paste has a composition in which the silver powder is 86% by mass, a glass fit is 1% by mass, ethyl cellulose is 0.6% by mass, texanol is 10.5% by mass, and zinc oxide is 1.9% by mass, and the conductive paste is prepared by kneading the composition with a planetary centrifugal stirrer and bubble remover and dispersing with a triple roll mill.
Abstract: This disclosure relates to a fine silver particle dispersion comprising: (i) 60 to 95 wt. % of fine silver particles, wherein particle diameter (D50) of the fine silver particles is 50 to 300 nm, (ii) 4.5 to 39 wt. % of a solvent; and (iii) 0.1 to 3 wt. % of a resin, wherein the glass transition temperature (Tg) of the resin is 70 to 300° C., wherein the weight percentages are based on the weight of the fine silver particle dispersion.
Type:
Application
Filed:
October 4, 2017
Publication date:
April 4, 2019
Applicant:
DOWA ELECTRONICS MATERIALS CO., LTD.
Inventors:
Shingo TERAGAWA, Takashi HINOTSU, Dave HUI, Michael Stephen WOLFE, Howard David GLICKSMAN, Haixin YANG
Abstract: There is provided a solution containing lithium and at least one of a niobium complex and a titanium complex, suppresses corrosiveness, excellent in storage stability, and suitable for forming a coating layer capable of improving battery characteristics of an active material, and a related technique, which is the solution containing lithium, at least one of a niobium complex and a titanium complex, and ammonia, wherein an amount of the ammonia in the solution is 1 mass % or less.
Type:
Application
Filed:
March 9, 2017
Publication date:
March 28, 2019
Applicant:
DOWA ELECTRONICS MATERIALS CO., LTD.
Inventors:
Yoshiaki AIKI, Toshihiko UEYAMA, Koji TANOUE
Abstract: Provided is a method of producing a III nitride semiconductor light-emitting device having an n-type semiconductor layer, a light emitting layer, a barrier layer, and a p-type semiconductor layer. The p-type semiconductor layer is formed by forming an electron blocking layer on the light emitting layer; supplying a carrier gas containing nitrogen to a surface of the electron blocking layer; and forming a second p-type contact layer made of AlyGa1-yN on the electron blocking layer after the nitrogen carrier gas supply step. The second p-type contact formation step is performed using a carrier gas containing hydrogen. Source gases of Al and Ga are supplied to form a first p-type contact layer made of AlxGa1-xN with a thickness of more than 0 nm and 30 nm or less directly on the electron blocking layer and directly under the second p-type contact layer.
Abstract: A carrier core material formed with ferrite particles, the skewness Rsk of the particle is equal to or more than ?0.40 but equal to or less than ?0.20, and the kurtosis Rku of the particle is equal to or more than 3.20 but equal to or less than 3.50. Here, the maximum height Rz of the particle is equal to or more than 2.20 ?m but equal to or less than 3.50 ?m. Moreover, the ferrite particle contains at least either of Mn and Mg elements. In this way, cracking or chipping in a concave-convex portion of a particle surface is unlikely to occur, and moreover, the amount of coating resin used can be reduced without properties such as electrical resistance being lowered.
Abstract: There is provided a magnetic substance containing substituted ?-iron oxide particles applicable as a magnetic toner of one-component development system, and a technique related thereto, which is the magnetic substance containing substituted ?-iron oxide particles in which a part of ?-iron oxide is substituted with a metal element other than iron, and satisfying at least one of the following conditions: (Condition 1) A molar extinction coefficient of a magnetic substance dispersion liquid at a wavelength of 450 nm is less than 770 dm3 mol?1 cm?1. (Condition 2) A molar extinction coefficient of the magnetic substance dispersion liquid at a wavelength of 500 nm is less than 430 dm3 mol?1 cm?1.
Type:
Application
Filed:
January 19, 2017
Publication date:
January 31, 2019
Applicants:
THE UNIVERSITY OF TOKYO, DOWA ELECTRONICS MATERIALS CO., LTD.
Abstract: Provided is a III-nitride semiconductor light-emitting device having excellent device lifetime as compared with conventional devices and a method of producing the same. A III-nitride semiconductor light-emitting device 100 has an n-type semiconductor layer 30, a light emitting layer 40 containing at least Al, an electron blocking layer 50, and a p-type semiconductor layer 60 in this order. The light emitting layer 40 has a quantum well structure having well layers 41 and barrier layers 42. The electron blocking layer 50 is adjacent to the light emitting layer 40 and is formed from a layer having an Al content higher than that of the barrier layers 42 and the p-type semiconductor layer 60. The electron blocking layer 50 has a Si-based doped region layer 50a.
Abstract: There is provided a silver-coated copper powder which can improve the conversion efficiency of a solar cell in comparison with conventional silver-coated copper powders when it is used in an electrically conductive paste used for forming the busbar electrodes of the solar cell, the silver-coated copper powder being capable of producing a solar cell having a high conversion efficiency which is the same degree as that of a solar cell using silver powder, and a method for producing the same.
Abstract: A carrier core material is provided that is formed with ferrite particles which can uniformly adhere a coupling agent to the entire surface. A carrier core material is formed with ferrite particles, and the powder pH of the ferrite particles is equal to or more than 9. Here, the ferrite particles are preferably formed of Mn ferrite or Mn—Mg ferrite. The ferrite particles preferably contain 45 wt % or more but 65 wt % or less of Fe, 15 wt % or more but 30 wt % or less of Mn and 5 wt % or less of Mg.