Abstract: In the diffusion region (3) of the second conductivity mode, a more highly doped region of the same conductivity mode (5) is introduced in such a manner that the region of the first conductivity mode (2) which is covered by the metal silicide (9) and of the second conductivity mode (3) are connected in a conductive manner. The region (3) of the second conductivity mode is diffused in such a manner that it reaches the more highly doped region (1) of the first doping type (1), with an outward diffusion of the doping from the more highly doped substrate layer (1) into the more weakly doped layer (2) of the same conductivity mode in the direction of the semiconductor surface taking place at the same time.
Type:
Grant
Filed:
April 19, 2010
Date of Patent:
September 3, 2013
Assignee:
Eris Technology Corporation
Inventors:
Michael Reschke, Hans-Jurgen Hillemann, Klaus Gunther
Abstract: In the diffusion region (3) of the second conductivity mode, a more highly doped region of the same conductivity mode (5) is introduced in such a manner that the region of the first conductivity mode (2) which is covered by the metal silicide (9) and of the second conductivity mode (3) are connected in a conductive manner. The region (3) of the second conductivity mode is diffused in such a manner that it reaches the more highly doped region (1) of the first doping type (1), with an outward diffusion of the doping from the more highly doped substrate layer (1) into the more weakly doped layer (2) of the same conductivity mode in the direction of the semiconductor surface taking place at the same time.
Type:
Application
Filed:
April 19, 2010
Publication date:
November 11, 2010
Applicant:
ERIS TECHNOLOGY CORPORATION
Inventors:
Michael Reschke, Hans-Jürgen Hillemann, Klaus Günther