Abstract: Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.
July 24, 2020
May 6, 2021
EUGENETECH MATERIALS CO., LTD.
Geun Su LEE, Jae Min KIM, Ha Na KIM, Woong Jin CHOI, Eun Ae JUNG, Dong Hyun LEE, Myung Soo LEE, Ji Won MOON, Dong Hak JANG, Hyun Sik NOH
Abstract: The invention relates to a precursor composition containing a mixture of a Group IV organic compound represented by Formula 19 and any one compound selected from an organic aluminum compound represented by Formula 1, an organic gallium compound represented by Formula 7, or an organic germanium compound represented by Formula 16, and a method for forming a thin film by using the precursor composition.
Abstract: A precursor composition according to an embodiment of the present invention contains a mixture of a Group IV organic compound and any one compound selected from an organic aluminum compound, an organic gallium compound, or an organic germanium compound.