Abstract: In the typical embodiments of the invention described in the specification, a radiation detector has a single crystal silicon substrate coated with an amorphous semiconductor film containing silicon and carbon, metal electrodes being provided. Amorphous layers are formed by a plasma CVD method using mixtures of monosilane gas and acetylene or tetrafluorocarbon gas at a pressure of 10 Torr with an applied voltage of 400-800 volts providing increased band gaps and higher resistivity to reduce current leakage.

Abstract: In the representative radiation detectors described in the specification, an amorphous silicon layer is grown on one or both of the opposed electrode surfaces of a single crystal silicon substrate and the amorphous silicon layer extends to the side surface of the substrate. The corresponding electrode is deposited on the amorphous silicon layer. Detectors may also be made using a single crystal of Ge, GeAs or CdTe with an amorphous layer of the same or another semiconductor material.

Abstract: A color discrimination method and sensor is provided for determining the color of a particular object. The sensor comprises a radiation source, focusing lenses, reflecting surfaces, sharp cut filters and a photodiode for spectral sensitivity. The photodiode detects the light and converts it into electrical signals that are delivered to an amplifier, which produces signals discriminated according to color. The system can detect light within an extended wavelength range of about 440 nm to 900 nm.

Abstract: Disclosed is an automatic focusing system for optical imaging equipment, such as a camera, which includes a relative image displacement detection system providing first and second digital quantities indicative of the direction in which the focus of the imaging system is to be altered to achieve focus and the magnitude of such alterations, respectively, and an image contrast detection system providing a third digital quantity indicative of the change in the contrast of an image formed by the imaging system as the focus thereof is altered. In addition, the apparatus includes a servomotor for altering the focus of the imaging system and a motor control circuit which receives the first, second and third digital quantities and provides motor control signals to the servomotor.

Abstract: An optical gas densitometer is provided comprising a conical filter portion having a front and rear end disposed to the inside of a cell portion and formed into a conical shape, which has a reflection mirror disposed to the inside of the front end thereof, windows disposed at the rear end thereof and in which the angle between an incident optical beam and an exiting optical beam is predetermined. Plate means at the front end of the filter and formed in a space between the inside of the cell portion and the outside of the conical filter portion, divides the space into a gas feed channel below the plate means and a gas exhaust channel above the plate means. An opening channel is disposed between the gas feed channel and the gas exhaust channel towards the rear end of the filter. A partition plate connected to the plate means at the front end of the filter, divides a gas sampling tube into first and second channels which correspond to the feed channel and exhausting channel, respectively.

Abstract: In the representative embodiment of the invention described in the specification, a boron coating is applied to a semiconductor body having a protective film of a compound of the semiconductor material by heating the semiconductor body to a temperature below 400.degree. C. in a vacuum chamber, introducing diborane gas into the chamber and causing a glow discharge between two electrodes in the chamber.

Abstract: In the specific embodiments described in the specification, a semiconductor radiation detector has a single-crystal silicon substrate coated with an amorphous silicon film containing an impurity to widen the mobility band gap of the semiconductor to reduce the reverse bias leakage current. Phosphorus and carbon are disclosed as impurities for the amorphous silicon film.

Abstract: In the embodiment disclosed in the specification, a rangefinder comprises left and right sensor arrays for receiving the light of an image of an object, evaluative signal generating circuits for defining the interrelation between left and right image data trains representing the distribution of light intensity within the object, an optimum shift value decision circuit for determining the shift number in the image data train corresponding to the highest correlation between both the image data trains, a range signal computing circuit for computing a range signal representing the distance up to the object from the optimum shifted number, and a control circuit for controlling and regulating a predetermined portion in equipment utilizing the range signal. The evaluative signal generating circuits are arranged to generate the evaluative signals simultaneously and transmit them in parallel to the shift value circuit defining the correlation between the left and right image data trains.

Abstract: In the particular embodiments of the invention described in the specification, a gas analyzer for determining the oxygen content of a gaseous mixture has a ceramic substrate formed with a cavity at one end which is covered by a zirconia electrolyte disc. A small aperture admits gas to the cavity. The zirconia disc has electrodes coated on opposite sides and the ceramic substrate has strip conductors leading from the cavity to terminate at the opposite end.

Abstract: An image sensing system comprises an array of photosensors each adapted to sense the light intensity in a respective portion of an image, and circuitry for scanning the photosensor in the array including a plurality of pulse generation circuits corresponding to respective photosensors and each providing a pulse delayed with respect to the beginning of a scanning operation by an interval approximately inversely proportional to the light intensity sensed by its corresponding photosensor. In addition, the system includes a plurality of memory storage locations, each one associated with a respective photosensor and its corresponding pulse generation circuit, and adapted to store a multiple bit code.

Abstract: In the typical embodiment of the invention described herein, a photoelectronic conversion device comprises a transparent insulative substrate, a first transparent electrode layer of Sn-incorporated In.sub.2 O.sub.3 having a relatively low sheet resistance and a thickness of about 1000 .ANG., a second transparent electrode layer of SnO.sub.2 having a relatively high plasma resistance and a thickness of several tens to several hundreds of Angstroms, an amorphous semiconductor film formed by a plasma CVD process at a substrate temperature of about 200.degree.-250.degree. C., and a metal electrode.