Abstract: The invention provides a thin film device where ionic crystals are epitaxially grown on a Si single crystal substrate through a proper buffer layer, and its for fabrication method. A ZnS layer is first deposited on a Si single crystal substrate. Ionic crystal thin films (an n-GaN layer, a GaN layer, and a p-GaN layer) are deposited thereon. The ZnS thin film is an oriented film excellent in crystallinity and has excellent surface flatness. When ZnS can be once epitaxially grown on the Si single crystal substrate, the ionic crystal thin films can be easily epitaxially grown subsequently. Therefore, ZnS is formed to be a buffer layer, whereby even ionic crystals having differences in lattice constants from Si can be easily epitaxially grown in an epitaxial thin film with few lattice defects on the Si single crystal substrate. The characteristics of a thin film device utilizing it can be enhanced.

Abstract: The invention provides a thin film device where ionic crystals are epitaxially grown on a Si single crystal substrate through a proper buffer layer, and its for fabrication method. A ZnS layer is first deposited on a Si single crystal substrate. Ionic crystal thin films (an n-GaN layer, a GaN layer, and a p-GaN layer) are deposited thereon. The ZnS thin film is an oriented film excellent in crystallinity and has excellent surface flatness. When ZnS can be once epitaxially grown on the Si single crystal substrate, the ionic crystal thin films can be easily epitaxially grown subsequently. Therefore, ZnS is formed to be a buffer layer, whereby even ionic crystals having differences in lattice constants from Si can be easily epitaxially grown in an epitaxial thin film with few lattice defects on the Si single crystal substrate. The characteristics of a thin film device utilizing it can be enhanced.

Abstract: A thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and a compound thin film with ionic bonding, which is formed on the metal sulfide layer by epitaxial growth. Alternatively, a thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and at least two compound thin films with ionic bonding, which are formed on the metal sulfide layer by epitaxial growth. For example, (11{overscore (2)}0) surface AlN/MnS/Si (100) thin films formed by successively stacking a MnS layer (about 50 nm thick) and an AlN layer (about 1000 nm thick) on a single crystal Si (100) substrate, are used as a substrate, and a (11{overscore (2)}0) surface GaN layer (about 100 nm thick) operating as a light emitting layer is formed on the substrate, thereby fabricating a thin film device.

Abstract: An n layer, an i layer and a p layer are laminated, in that order, in a non-single-crystal thin film solar cell. The n layer, a part of the n layer, or the n layer and part of the i layer, is formed at a low substrate temperature T1. The i layer and the p layer; the residual n layer, i layer and p layer; or the residual i layer and p layer, are formed at a higher substrate temperature T2 than T1. More particularly, T1 is between about 70° C. and 120° C., and T2 is between about 120° C. and 450° C.

Abstract: The quality of CuInSe.sub.2 solar cells is estimated during the manufacturing process by using a photoluminescence analysis. Emitted luminescence is measured upon irradiation of a CuInSe.sub.2 thin film with laser light, and estimation is performed on the basis of the luminous intensity. Specifically, non-defective products can be obtained by using lots in which the maximum luminous intensity in the spectral range of luminescent light of 0.8.about.0.9 eV of a sample cooled to liquid nitrogen-temperature or to liquid helium temperature is not lower than a predetermined value or is higher than the maximum luminous intensity in the spectral range of 0.9.about.1.0 eV. Further, after the manufacturing process is completed, by using this estimation, it is possible to rank the products after completion of the manufacturing process.

Abstract: An amorphous photoelectric transducer of the type that converts light energy to electric energy using a p-n or p-i-n junction in an amorphous semiconductor having a p-type film on the light entrance side is disclosed. The p-type amorphous semiconductor film is formed with gaseous boron trifluoride (BF.sub.3) as a dopant, the film containing boron atoms at a concentration in the range of 1.times.10.sup.20 -2.times.10.sup.21 atoms/cm.sup.3, and the concentration of fluorine atoms in the film being no more than one half of the concentration of boron atoms. A process for producing an amorphous photo-electric transducer is also disclosed, wherein the p-type amorphous semiconductor film is formed by a pulse discharge-assisted chemical vapor deposition (CVD) technique which decomposes a feed gas including gaseous boron trifluoride (BF.sub.3) as a dopant.

Abstract: A fuel cell cooling device includes a plurality of plate-like fuel cell units arranged in a vertical stack and having singly interspersed therein cooling plates. A main coolant pipe supplies coolant at a pressure above the saturation point thereof to the cooling plates through corresponding inlet cooling pipes. A throttle is provided in each inlet cooling pipe to produce a pressure drop such that coolant entering a cooling plate is at a pressure below the saturation point thereof.

Abstract: A method of producing a carbon-doped amorphous silicon thin film upon a substrate comprising the steps of growing a carbon-doped amorphous silicon layer by plasma assisted chemical vapor deposition, including generating a glow discharge in a gaseous mixture of a silane gas and a hydrocarbon gas, and exposing said carbon-doped amorphous silicon layer to a plasma in a gas containing hydrogen to achieve a resultant layer having a prescribed value of photoconductivity.

Abstract: A solar cell module and method of manufacture in which the cell has a transparent substrate, an overlying transparent electrode, a layer of amorphous silicon and a metal electrode. Adjacent cells are connected in series by using a laser to divide the transparent electrode into strips and similarly dividing the metal electrode into overlying strips to define gaps between adjacent strips, with the layer of amorphous silicon lying across the gaps. That overlying portion is then crystallized by a laser beam so as to form a connection between the transparent electrode of one strip and the metal electrode of an adjacent strip.

Abstract: A method of manufacturing a high efficiency solar battery and a high efficiency solar battery comprising a transparent electrode of SnO.sub.2, and a semiconductor layer and a metal electrode formed on the transparent electrode in the stated order. The surface unevenness of the transparent electrode is controlled by forming a dual layer structure. The layer adjacent the transparent substrate comprises an undoped SnO.sub.2 layer, having crystal grains growing substantially perpendicular to the substrate, producing an uneven surface. A doped layer containing impurities, such as F, Cl, and Sb is deposited over the undoped layer.

Abstract: An amorphous photoelectric converting device that remains efficient despite exposure to heat over long periods of time is formed by placing one on top of the other a plurality of photovoltaic elements each comprising a thin film of p-i-n structure. The p-type layer and the n-type layer of adjacent elements are made of microcrystalline silicon so that good ohmic contact is established, and the p-type layer of microcrystalline silicon contains boron in an amount sufficient to neutralize the donor atoms which diffuse from the adjacent n-type layer when the device is left to stand at high temperatures for a long period of time. The amount of boron, however, is limited to such an extent that the boron atoms do not adversely affect the initial desired characteristics of the device. A preferred range of boron levels is 3.times.10.sup.20 to 1.times.10.sup.21 atoms/cm.sup.3.

Abstract: A multi-layered thin film solar cell is provided, which includes a substrate, a plurality of transparent electrodes, and a plurality of groups of photoelectric conversion elements formed of semiconductor material and forming successive photoelectric conversion layers. The layers have optical band gaps which decrease successively in a direction away from a side of the cell adapted to receive incident light. The groups of elements forming the layers are laminated on the substrate. Each of the elements belonging to one of the groups is connected in series with one of the elements belonging to another of the groups and is connected in parallel with other elements in the group to which it belongs.

Abstract: A method of manufacturing a voltage nonlinear resistance element comprising the steps of providing a mixture of main component ZnO and auxiliary components of at least a rare earth element, Co and B in a mold, placing the mold in a sheath box having openings in the surfaces thereof, and baking the mold in the sheath box. The preferred ratio of the area of the openings in the sheath box to the total surface area of the sheath box is 10-90% to produce the voltage nonlinear resistance elements having favorable long wave tail surge withstanding data and an acceptable ratio of a voltage developed across the terminals of the element when a current of 1 mA flows in the element.

Abstract: A gun barrel structure for a tank having improved heat dissipation properties and accordingly improved accuracy. The gun barrel of the tank is surrounded by a cylindrical heat pipe containing a working fluid. The heat pipe may be constituted by concentric inner and outer cylinders with the working fluid therebetween, or by a single cylinder surrounding the gun barrel with the working fluid held between the outer surface of the gun barrel and the inner surface of the cylinder. Preferably, the heat pipe is divided into a plurality of separate sections disposed along the barrel. A wick holding the working fluid may also be employed.

Abstract: A solar battery having a plurality of photoelectric conversion elements connected in series. Each element consists of a transparent electrode layer, a non-crystalline semiconductor layer and a metal electrode layer laid one upon another in the stated order. In one embodiment, a site comprising a polycrystalline region is provided in the non-crystalline semiconductor. A conductive element sandwiches the transparent electrode between it and said non-crystalline material directly beneath said site. In another embodiment, a void which is filled with metal from said metal electrode layer connects the metal electrode layer and the underlying transparent electrode. Methods of manufacturing the solar battery including laser irradiation to form the polycrystalline region or void are disclosed.

Abstract: A laser processing method comprises the steps of generating a pulsed laser beam having a substantially circular shape; modifying the beam to a substantially rectangular shape; and scribing the surface of a workpiece with the rectangular beam to form grooves therein. The scribing step may include scanning the surface with the beam in a predetermined pattern, and aligning two parallel sides of the rectangular beam in parallel with the direction of the scanning. The beam may be made square, or may have unequal sides with the longer sides preferably arranged in parallel with the scanning direction.

Abstract: An apparatus and method for producing a thin-film photoelectric transducer. The transducer has a transparent substrate, an amorphous silicon layer and a metal layer; the apparatus has a processing laser for patterning each of the layers. In addition, a separate visible laser is used to detect defects in the layers and the processor laser is then used to correct the defects.

Abstract: A weighted event counting circuit comprises a cascade connection circuit composed of a plurality of frequency dividing circuit means and a plurality of coincidence detecting circuit means inserted between the frequency dividing circuit means, and input circuit means to supply digital data representing the occurrence of plural events to the coincidence detecting circuit means. The number of occurrence times of the plural events is counted and totalized with weighting.

Abstract: An infrared analyzer where infrared radiation is passed through a measurement cell containing a material that includes a component that absorbs infrared radiation. The radiation exiting the measurement cell passes into a first detector, through an optical filter to a second infrared radiation detector. By analyzing the outputs from each detector and by knowing the characteristics of the optical filter, the concentration of certain infrared absorbing components in the material can be determined.

Abstract: A temperature detecting device employing as a temperature detecting element a CdInGaS.sub.4 compound semiconductor material. The temperature of a body in thermal contact with the temperature detecting element is determined using either a reflecting or an absorbing technique. CdInGaS.sub.4 semiconductor material used as a light detecting element provides a temperature measuring range of about -200.degree. C. to about 400.degree. C.