Abstract: A display device of active matrix type allows reducing display brightness non-uniformity that is caused by initial variation and fluctuation over time in a driving transistor for emissive elements in pixel circuits. The display device includes pixel circuits, a measurement circuit and a gradation voltage supplying circuit. Each pixel circuit includes the driving transistor and an input circuit. The measurement circuit includes a constant current supplying circuit for generating and supplying one or more constant currents to the input circuit of the pixel circuits in a time division manner. The measurement circuit A/D-converts output voltages of the constant current supplying circuit and calculates data relating to electron mobility and threshold value of the driving transistor. The gradation voltage supplying circuit supplies to the pixel circuits a corrected gradation voltage, which is data corrected on the basis of data calculated from the measurement circuit.

Abstract: A logic circuit with a simple configuration and good current efficiency is provided. The logic circuit includes a two-terminal bistable switching element (1) having characteristics which maintain states, a first switching element (25) one end of which is connected to one terminal of the two-terminal bistable switching element (1), a second switching element (29) one end of which is connected to the other terminal of the two-terminal bistable switching element (1) via a resistance element (27), and first and second pulse input terminals (33, 37) respectively connected to the one terminal and the other terminal of the two-terminal bistable switching element (1). A bias voltage is applied across the other end of the first switching element (25) and the other end of the second switching element (27), and a trigger pulse is input from the first and second pulse input terminals (33, 37).

Abstract: A resonant cavity color conversion EL element in which intensity of converted light from a color conversion layer is increased and an organic EL display device in which viewing angle dependence of the color tone is small and the manufacturing process is simple. The EL element includes at least a pair of electrodes; a functional layer includes a light-emitting layer and is sandwiched by the pair of electrodes; a color conversion layer that absorbs light emitted from the light-emitting layer and emits light with a different wavelength; and a pair of light reflective layers. Notably, the pair of light reflective layers are composed of a non-transparent reflective layer and a semi-transparent reflective layer that have a distance therebetween that is set at an optical distance to construct a microcavity that increases intensity of light with a specific wavelength emitted from the color conversion layer.

Abstract: Whether a safety function unit having a safety function of a desired standard is correctly mounted in a safety device having a configuration in which a basic control function and safety function are separated is accurately determined. The safety device includes a controller and the safety function unit. The controller is provided with a unit which selects a category for identifying a safety function unit which should be connected, a unit which transmits a reference signal to the safety function unit, a unit which determined, based on a category identification signal returned from the safety function unit, whether or not the category of the connected safety function unit coincides with a selected category, and a unit which, in the event that the result of the determination is such that the category of the connected safety function unit and the selected category do not coincide, prohibits the output of a control signal.

Abstract: During single operation of a distributed power supply system that has been disconnected from a commercial electric power system, a frequency increase monitoring circuit is operated and an instruction to output a larger amount of a constant reactive current is given to a reactive current controlling unit. After the output frequency of the distributed power supply exceeds a frequency increase level, the level of an active current is limited in accordance with the level of the outputted reactive current.

Abstract: A flame retardant resin treated article that excels in flame retardancy and is free from bleedout. A resin composition comprising a flame retarder of metal phosphinate represented by the general formula: (I) (in the formula, each of R1 and R2 is a C1-C6 alkyl or an aryl group having 12 or less carbon atoms; M is calcium, aluminum or zinc; and when M=aluminum, m=3, and otherwise m=2), a reactive organophosphorus flame retarder having an unsaturated group at its terminal and a resin wherein the total content of metal phosphinate and reactive organophosphorus flame retarder is in the range of 5 to 30 mass % is provided in molded form or coating form.

Abstract: A spin valve element including an insulating layer or a nonmagnetic layer sandwiched by first and second ferromagnetic layers, and a porous layer having a plurality of minute holes placed in contact with one of the ferromagnetic layers, or near one of the ferromagnetic layer with another intervening layer therebetween. The first ferromagnetic layer is electrically connectable through the minute holes of the porous layer, and the second ferromagnetic layer is also electrically connectable.

Abstract: A logic circuit with a simple configuration and good current efficiency is provided. The logic circuit includes a two-terminal bistable switching element (1) having characteristics which maintain states, a first switching element (25) one end of which is connected to one terminal of the two-terminal bistable switching element (1), a second switching element (29) one end of which is connected to the other terminal of the two-terminal bistable switching element (1) via a resistance element (27), and first and second pulse input terminals (33, 37) respectively connected to the one terminal and the other terminal of the two-terminal bistable switching element (1). A bias voltage is applied across the other end of the first switching element (25) and the other end of the second switching element (27), and a trigger pulse is input from the first and second pulse input terminals (33, 37).

Abstract: A spin valve element including parallelly or serially connected magnetic element groups, each magnetic element group having a plurality of magnetic elements that each include an intermediate layer of an insulating member or a nonmagnetic member sandwiched by a pair of ferromagnetic layers. The plurality of magnetic elements are further connected either in series or in parallel.

Abstract: Disclosed is a flame-retardant resin processed article having excellent flame retardance while being free from bleed-out. Specifically, a resin composition containing a cyclic phosphorus compound flame retardant, a hydrophilic silica powder having an average particle diameter of not more than 15 m, and a resin with the total content of the cyclic phosphorus compound and the hydrophilic silica powder being 10-45% by mass is molded into a certain shape or formed into a coating film. The hydrophilic silica powder is preferably composed of porous structures having a pore volume of not more than 1.8 ml/g and a pH of 4-7. More preferably, the hydrophilic silica powder has an oil absorption of not less than 50 ml/100 g in accordance with JIS K5101.

Abstract: A magnetic memory element (10) for use in a cross-point type memory is provided with a spin valve structure having a free layer (5), a nonmagnetic layer (4), and a pinned layer (3). The magnetic memory element is also provided with another nonmagnetic layer (6) on one surface of the free layer (5), and furthermore, a magnetic change layer (7) whose magnetic characteristics change depending on temperature so as to sandwich the nonmagnetic layer (6) with the free layer (5). In the magnetic change layer (7), the magnetization intensity increases depending on temperature.

Abstract: On the top surface of a thin semiconductor wafer, top surface structures forming a semiconductor chip are formed. The top surface of the wafer is affixed to a supporting substrate with a double-sided adhesive tape. Then, from the bottom surface of the thin semiconductor wafer, a trench, which becomes a scribing line, is formed by wet anisotropic etching so that side walls of the trench are exposed. On the side walls of the trench with the crystal face exposed, an isolation layer with a conductivity type different from that of the semiconductor wafer for holding a reverse breakdown voltage is formed simultaneously with a collector region of the bottom surface diffused layer by ion implantation, followed by annealing with laser irradiation. The side walls form a substantially V-shaped or trapezoidal-shaped cross section, with an angle of the side wall relative to the supporting substrate being 30-70°. The double-sided adhesive tape is then removed from the top surface to produce semiconductor chips.

Abstract: A switching element with bistable characteristics which has switching characteristics stabilized by raising transition probability. The switching element has an organic bistable material layer between at least two electrodes. The organic bistable material layer contains an organic bistable compound having two stable resistance values to an applied voltage, wherein the switching element has thin films of a first electrode layer, a metal microparticle-containing layer, the organic bistable material layer, and a second electrode layer, formed on a substrate in this order, and the metal microparticle-containing layer contains metal microparticle and the organic bistable compound.

Abstract: Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: Inx+1MZny+1SnzO(4+1.5x+y+2z) (wherein M is Ga or Al, 0?x?1, ?0.2?y?1.2, z?0.4 and 0.5?(x+y)/z?3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.

Abstract: The invention prevents the voltage change ratio of switching devices of a power converter from exceeding a specified maximum rating, thus avoiding damage in switching devices and an increase in conduction loss. In a power converter having a plurality of switching devices, switching means for switching a control scheme for the switching devices to a phase shift control scheme or a pulse width modulation scheme is provided, whereby the control scheme for the switching devices is switched from the phase shift control scheme to the pulse width modulation scheme in a non-load or light-load state.

Abstract: The present invention provides a switching element that has a stable bistable characteristic and a high transition voltage and demonstrates excellent cyclic performance. The switching element has two stable resistance values with respect to the voltage applied between electrodes, wherein a first electrode layer, an organic bistable material layer, and a second electrode layer are successively formed as thin films on a substrate and the organic bistable material constituting the organic bistable material layer is a quinomethane-based compound or a monoquinomethane-based compound. A metal constituting the second electrode layer is diffused into the organic bistable material layer. It is preferred that the second electrode layer be formed by vapor deposition and the temperature of the substrate during the vapor deposition be 30-150° C.

Abstract: A transistor-like electronic device operates somewhat as a triode vacuum tube. Two electrodes (source and drain) sandwich an intermediate layer of organic semiconductor material in which fine metallic particles are dispersed. Due to the fineness and number of the particles, they are close enough to each other that electrons can tunnel from one to the nest, so that a voltage impressed at the edge of the intermediate layer causes current to flow through the dispersed particles, and causes the entire layer to reach the impressed voltage. By varying the impressed voltage, the voltage of the intermediate layer is caused to vary, which controls conduction between the source and drain. By making the particles small, the proportion of open area between the particles remains large so the electrons have room to move around the particles and through the organic material in intermediate layer, allowing high currents to flow through the device.

Abstract: A semiconductor device according to the invention includes n-type semiconductor substrate 1; trenches 15 formed in the surface portion of semiconductor substrate 1; a protruding semiconductor region between trenches 15; p-type base layer 2 in the protruding semiconductor region, p-type base layer 2 being positioned as deep as or shallower than trench 15; an n++-type emitter region or a source region in the surface portion of p-type base layer 2; gate insulator film 4a on the first side wall of the protruding semiconductor region; and gate electrode 6 on gate insulator film 4a. Trench 15 is from 0.5 ?m to 3.0 ?m deep and the short side of trench 15 is 1.0 ?m or longer. The short side of the protruding semiconductor region is from 0.5 ?m to 3.0 ?m long. Gate electrode 6 contains electrically conductive polycrystalline silicon as its main component. Gate electrode 6 is from 0.2 ?m to 1.0 ?m thick.

Abstract: An organic EL display is constituted by providing a stress-relieving layer made of a material having a higher elastisity and a lower refractive index than an adhesive layer at edges of color-converting filters that are constituted from color filter layers alone, or color filter layers and color-converting layers, and are formed on a transparent supporting substrate. As a result, stress arising when bonding the color-converting filters and the organic light-emitting device together, or when there are changes in the environment in which the display is placed is absorbed by the stress-relieving layer, and hence the light-emitting device is not damaged, and moreover reflection at walls of the stress-relieving layer is promoted, and hence there is a reduction in the component of the light emitted by the light-emitting device that escapes sideways. An organic EL display having high reliability and high efficiency is thus provided.

Abstract: On the top surface of a thin semiconductor wafer, top surface structures forming a semiconductor chip are formed. The top surface of the wafer is affixed to a supporting substrate with a double-sided adhesive tape. Then, from the bottom surface of the thin semiconductor wafer, a trench, which becomes a scribing line, is formed by wet anisotropic etching so that side walls of the trench are exposed. On the side walls of the trench with the crystal face exposed, an isolation layer with a conductivity type different from that of the semiconductor wafer for holding a reverse breakdown voltage is formed simultaneously with a collector region of the bottom surface diffused layer by ion implantation, followed by annealing with laser irradiation. The side walls form a substantially V-shaped or trapezoidal-shaped cross section, with an angle of the side wall relative to the supporting substrate being 30-70°. The double-sided adhesive tape is then removed from the top surface to produce semiconductor chips.