Abstract: A method of detecting and quantifying viable cells in a sample. The method includes fluorescently staining the cells by adding a fluorescent dye into the sample or putting the sample in contact with the fluorescent dye. A quenching dye is then added to the stained sample, or the sample is put into contact with the quenching dye, at a pH different from the pH in the viable cells. The quenching dye used is permeable through the membrane of a viable cell and does not readily absorb fluorescence of the fluorescent dye at the pH in the viable cells, but absorbs the fluorescence of the fluorescent dye at the pH of the fluorescent dye. Next, the sample, now stained with the fluorescent dye and the quenching dye, is illuminated by an excitation light for the fluorescent dye at a pH different from the pH in the viable cells and the fluorescence emitted from the sample is collected and detected.

Abstract: A resonant cavity color conversion EL element in which intensity of converted light from a color conversion layer is increased and an organic EL display device in which viewing angle dependence of the color tone is small and the manufacturing process is simple. The EL element includes at least a pair of electrodes; a functional layer includes a light-emitting layer and is sandwiched by the pair of electrodes; a color conversion layer that absorbs light emitted from the light-emitting layer and emits light with a different wavelength; and a pair of light reflective layers. Notably, the pair of light reflective layers are composed of a non-transparent reflective layer and a semi-transparent reflective layer that have a distance therebetween that is set at an optical distance to construct a microcavity that increases intensity of light with a specific wavelength emitted from the color conversion layer.

Abstract: An organic EL device is disclosed that prevents degradation due to moisture and oxygen and that avoids the generation of dark spots even when a substrate covered with polymer or made of a resin is used. The organic EL device includes a substrate, a transparent electrode consisting of a plurality of electrode elements formed on the substrate, an organic EL layer formed on the transparent electrode, and a reflection electrode formed on the organic EL layer. The transparent electrode includes first and second transparent electrode elements. Each of the first transparent electrode elements is arranged alternately with each of the second transparent electrode elements. A side edge portion of each of the first transparent electrode elements overlaps a side edge portion of next second transparent electrode element through an insulation layer. The first transparent electrode elements are electrically insulated from the second transparent electrode elements.

Abstract: A semiconductor device including an n-type semiconductor substrate, a p-type channel region and a junction layer provided between the n-type semiconductor substrate and the p-type channel region is disclosed. The junction layer has n-type drift regions and p-type partition regions alternately arranged in the direction in parallel with the principal surface of the n-type semiconductor substrate. The p-type partition region forming the junction layer is made to have a higher impurity concentration than the n-type drift region. This enables the semiconductor device to have an enhanced breakdown voltage and, at the same time, have a reduced on-resistance.

Abstract: A semiconductor device and method of manufacturing the same includes an n?-single crystal silicon substrate, with an oxide film selectively formed thereon. On the oxide film, gate polysilicon is formed. The surface of the gate polysilicon is covered with a gate oxide film whose surface is covered with a cathode film doped in an n-type with an impurity concentration higher than that of the substrate as an n?-drift layer. In the cathode film, a section in contact with the substrate becomes an n+-buffer region with a high impurity concentration, next to which a p-base region is formed. Next to the p-base region, an n+-source region is formed. On the cathode film, an interlayer insulator film is selectively formed on which an emitter electrode is formed. A semiconductor device such as an IGBT is obtained with a high rate of acceptable products, an excellent on-voltage to turn-off loss tradeoff and an excellent on-voltage to breakdown voltage tradeoff.

Abstract: An organic EL light emitting display employs a color conversion system having a structure in which generation of dark areas in an organic EL element can be suppressed and emission of the organic EL light emitting element can be made highly efficient. The organic EL light emitting display successively includes a transparent substrate, one kind or a plurality of kinds of color filter layers, a bonding layer, a color conversion layer, a barrier layer, a transparent electrode, an organic EL layer and a reflecting electrode. The color filter layer is formed by a wet process, the color conversion layer and the barrier layer are formed by a dry process, and the bonding layer is selected from a group consisting of an inorganic bonding layer, an organic bonding layer, and a laminated body of an organic bonding layer and an inorganic bonding layer.

Abstract: Disclosed is a reactive flame retardant which provides a resin with excellent flame retardance even when it is added in a small amount while being prevented from bleedout. Also disclosed is a flame-retardant resin processed article obtained by using such a reactive flame retardant. An organophosphorus compound represented by the general formula (I) below, wherein at least one or more of X1-X3 represent a group containing phosphorus and having a terminal unsaturated group, is used as a reactive flame retardant which is reactive with resins. A flame-retardant resin processed article can be obtained by solidifying the resin composition containing the organophosphorus compound and then reacting it through heating or application of radiation.

Abstract: When the ratio of a guest material to a host material is extremely small, it is difficult to maintain, with good accuracy, the ratio of the guest material to be vapor-deposited on the work surface and the distribution state of the guest material. The vacuum vapor deposition apparatus and method includes providing a shielding member, positioned between a first vapor deposition source and a substrate to be coated so that the vapor deposition amount of the guest material on the substrate surface is significantly less than the vapor deposition amount of the host material. A shielding member drive mechanism rotates the shielding member about a first axis while rotating the shielding member about a second axis, which is spaced from and parallel to the first axis.

Abstract: A semiconductor device including an n-type semiconductor substrate, a p-type channel region and a junction layer provided between the n-type semiconductor substrate and the p-type channel region is disclosed. The junction layer has n-type drift regions and p-type partition regions alternately arranged in the direction in parallel with the principal surface of the n-type semiconductor substrate. The p-type partition region forming the junction layer is made to have a higher impurity concentration than the n-type drift region. This enables the semiconductor device to have an enhanced breakdown voltage and, at the same time, have a reduced on-resistance.

Abstract: A spin injection magnetic domain wall displacement wall displacement device has a plurality of spin injection magnetic domain wall displacement elements. Each element includes a magnetic domain wall displacement layer having a magnetic domain wall, a first magnetic layer group having at least one ferromagnetic layer, and a second magnetic layer group having at least one ferromagnetic layer. The first magnetic layer group is disposed at one end or side of the magnetic domain wall displacement layer and the second magnetic layer group disposed at the other end or side thereof. The magnetic domain wall in the magnetic domain wall displacement layer is displaced by flowing electrons between the first magnetic layer group and the second magnetic layer group.

Abstract: A spin injection magnetic domain wall displacement device has a plurality of spin injection magnetic domain wall displacement elements. Each element includes a magnetic domain wall displacement layer having a magnetic domain wall, and a first, second, and third magnetic layer groups each having a ferromagnetic layer. The first, second, and third magnetic layer groups are disposed in the order on the same side of the magnetic domain wall displacement layer. The magnetic domain wall is displaceable by flowing electrons between the first and third magnetic layer groups. The position of the magnetic domain wall in the magnetic domain wall displacement layer is detectable based on the difference in the electrical resistance across the second and first or third magnetic layer groups. The magnetic domain wall displacement layer is in antiferromagnetic coupling with the first magnetic layer group, and in antiferromagnetic or ferromagnetic coupling with the third magnetic layer group.

Abstract: A flame retardant resin treated article that excels in flame retardancy and is free from bleedout. A resin composition comprising a flame retarder of metal phosphinate represented by the general formula: (I) (in the formula, each of R1 and R2 is a C1-C6 alkyl or an aryl group having 12 or less carbon atoms; M is calcium, aluminum or zinc; and when M=aluminum, m=3, and otherwise m=2), a reactive organophosphorus flame retarder having an unsaturated group at its terminal and a resin wherein the total content of metal phosphinate and reactive organophosphorus flame retarder is in the range of 5 to 30 mass % is provided in molded form or coating form.

Abstract: An organic EL display device is disclosed that prevents charging and discharging that do not contribute to light emission, thereby reducing power consumption. The organic EL display device comprises a plurality of first electrode elements, a plurality of second electrode elements crossing the first electrode elements, and organic light emitting layers sandwiched by the first electrode elements and the second electrode elements. A first driving unit passes light emitting current through the first electrode elements. A second driving unit connects the second electrode elements to the ground to pass the light emitting current and to a second power supply not to pass the light emitting current. The voltage of the second power supply is varied in synchronism with the voltage waveform of output of the light emitting current from the first driving unit.

Abstract: A method for manufacturing a silicon carbide (SiC) semiconductor device is disclosed that uses dry etching with the use of high-density inductive coupled plasma (ICP). The method employs a first dry etching and a sequential second dry etching under conditions that differ from those used in the first dry etching. The dry etch process allows a trench to be deeply etched to a depth of more than 3 ?m in a SiC laminated semiconductor substrate and allows the bottom of the trench to be flat without forming a convexo-concave shape having an acute angle which has an influence on characteristics of a breakdown voltage due to electric field concentration being caused in the bottom.

Abstract: In the method for manufacturing a semiconductor device according to the invention including the step of forming trenches having the depth thereof in perpendicular to the major surface of a semiconductor substrate, the step of forming trenches includes the steps of performing trench etching using an insulator film, formed on the major surface of the semiconductor substrate and shaped with a predetermined pattern, for a mask to form the trenches; etching the inside of the trenches using a halogen containing gas to smoothen the inside of the trenches; and thermally treating in a non-oxidizing and non-nitriding atmosphere. The manufacturing method according to the invention facilitates well removing the etching residues remaining in the trenches and rounding the trench corners properly when the trenches are 2 ?m or narrower in width and even when the trenches are 1 ?m or narrower in width.

Abstract: A method of forming an insulative film includes a step of vacuum laminating an insulative organic material on a substrate that has a peripheral ring electrode formed in a peripheral region of the substrate and a device element(s) formed inside the peripheral region, and has a surface configuration including raised parts. A first dummy pattern is formed in a region between the peripheral ring electrode and the device element on the substrate.

Abstract: A spin injection magnetization reversal element includes a ferromagnetic fixed layer, an isolation layer and a ferromagnetic free layer. The area of contact between the ferromagnetic fixed layer and the isolation layer is larger than an area of contact between the ferromagnetic free layer and the isolation layer. The ferromagnetic fixed layer may be divided into ferromagnetic first fixed layer and ferromagnetic second fixed layer, and the isolation layer may be divided into first isolation layer and second isolation layer. The ferromagnetic first fixed layer may be arranged on one of opposed principal surfaces of the ferromagnetic free layer with the first isolation layer in between, and the ferromagnetic second fixed layer may be arranged on the other of the opposed principal surfaces of the ferromagnetic free layer with the second isolation layer in between. The element holds recorded magnetization and can reverse magnetization with a small current density.

Abstract: To provide a semiconductor device that exhibits a high breakdown voltage, excellent thermal properties, a high latch-up withstanding capability and low on-resistance. The semiconductor device according to the invention, which includes a buried insulator region 5 disposed between an n?-type drift layer 3 and a first n-type region 7 above n?-type drift layer 3, facilitates limiting the emitter hole current, preventing latch-up from occurring, raising neither on-resistance nor on-voltage. The semiconductor device according to the invention, which includes a p-type region 4 disposed between the buried insulator region 5 and n?-type drift layer 3, facilitates depleting n?-type drift layer 3 in the OFF-state of the device.

Abstract: Disclosed is a flame-retardant resin processed article having excellent flame retardance while being free from bleed-out. Specifically, a resin composition containing a cyclic phosphorus compound flame retardant, a hydrophilic silica powder having an average particle diameter of not more than 15 m, and a resin with the total content of the cyclic phosphorus compound and the hydrophilic silica powder being 10-45% by mass is molded into a certain shape or formed into a coating film. The hydrophilic silica powder is preferably composed of porous structures having a pore volume of not more than 1.8 ml/g and a pH of 4-7. More preferably, the hydrophilic silica powder has an oil absorption of not less than 50 ml/100 g in accordance with JIS K5101.

Abstract: An apparatus for manufacturing a thin-film laminated member by laminating a plurality of thin films on the surface of a band-shaped flexible substrate includes a substrate conveying device for conveying the band-shaped flexible substrate in the horizontal direction with the widthwise direction of the band-shaped flexible substrate oriented in the vertical direction. A plurality of film forming chambers are arranged in succession along the direction in which the band-shaped flexible substrate is conveyed for forming films on the surface of the band-shaped flexible substrate. A pair of upper grip rollers are arranged between the plurality of film forming chambers for pinching an upper edge portion of the band-shaped flexible substrate while the band-shaped flexible substrate is being conveyed. A method thereof includes pinching the upper edge portion of the band-shaped flexible substrate with the pairs of upper grip rollers.