Abstract: A double-sided polishing apparatus includes: a lower surface plate; an upper surface plate; and a carrier disposed between the lower surface plate and the upper surface plate and holding a disk-shaped workpiece, wherein the carrier is configured to rotate about a center of the lower surface plate and the upper surface plate and to rotate about a center of the carrier, the double-sided polishing apparatus includes a thickness measuring sensor at a fixed position above the upper surface plate or below the lower surface plate or at a movable position in an upper portion of the upper surface plate or a lower portion of the lower surface plate, the carrier includes circular perforations each holding the workpiece at a position eccentric to the center of the carrier, when a central position of any of the perforations preset by a user is defined as a first reference position, with a distance between a center of the upper surface plate or the lower surface plate and a center of any of the perforations preset by the u

Abstract: A production apparatus for a metal oxide single crystal according to one aspect of the present invention includes: a furnace having an interior heated to a temperature of 1,500° C. or more in an oxidative atmosphere, a heater heating the interior of the furnace, an inlet pipe being disposed in a lower part of the furnace and connecting an interior and an exterior of the furnace, an exhaust pipe being disposed in an upper part of the furnace and connecting an interior and an exterior of the furnace, a duct being disposed above the furnace, and an exhaust fan and a harmful substance elimination device being disposed in the middle of the duct.

Abstract: A crucible for growing a metal oxide single crystal is provided that can facilitate the balance between the thickness and the strength (hardness) of the constant diameter portion of the crucible and is capable of performing growth of a crystal having a large diameter. The crucible according to the present invention is a crucible for growing a metal oxide single crystal, including a reinforcing belt material provided on an outer periphery of a constant diameter portion of the crucible. It is possible that the crucible has an upper portion having a thickness that is smaller than a thickness of a lower portion of the crucible, and the upper portion of the crucible is the constant diameter portion.

Abstract: A gallium oxide crystal manufacturing device includes a crucible to hold a gallium oxide source material therein, a crucible support that supports the crucible from below, a crucible support shaft that is connected to the crucible support from below and vertically movably supports the crucible and the crucible support, a tubular furnace core tube that surrounds the crucible, the crucible support and the crucible support shaft, a tubular furnace inner tube that surrounds the furnace core tube, and a resistive heating element including a heat-generating portion placed in a space between the furnace core tube and the furnace inner tube. Melting points of the furnace core tube and the furnace inner tube are not less than 1900° C. A thermal conductivity of a portion of the furnace core tube located directly next to the crucible in a radial direction thereof is higher than a thermal conductivity of the furnace inner tube.

Abstract: A gallium oxide crystal manufacturing device includes a crucible to hold a gallium oxide source material therein, a crucible support that supports the crucible from below, a crucible support shaft that is connected to the crucible support from below and vertically movably supports the crucible and the crucible support, a tubular furnace core tube that surrounds the crucible, the crucible support and the crucible support shaft, a tubular furnace inner tube that surrounds the furnace core tube, and a resistive heating element including a heat-generating portion placed in a space between the furnace core tube and the furnace inner tube. Melting points of the furnace core tube and the furnace inner tube are not less than 1900° C. A thermal conductivity of a portion of the furnace core tube located directly next to the crucible in a radial direction thereof is higher than a thermal conductivity of the furnace inner tube.

Abstract: A polishing apparatus including: a turntable with an attached polishing pad; a polishing head that holds a wafer; a tank that stores a polishing agent; a polishing agent supply mechanism which supplies the stored polishing agent to the polishing pad; a waste liquid receiver which collects the polishing agent flowing from the turntable; and a circulation mechanism which is connected to the waste liquid receiver and supplies the collected polishing agent to the tank, the polishing agent is supplied to the polishing pad from the tank with the polishing agent supply mechanism, the used polishing agent which flows from the turntable is collected by the waste liquid receiver, a surface of the wafer held by the polishing head is rubbed against the pad to polish it while supplying the collected polishing agent to the tank to circulate the polishing agent, and the waste liquid receiver is fixed to the turntable and the waste liquid receiver having a bottom plate and a removable side plate.

Abstract: The polishing head comprises: a head main body part; a carrier being connected to the head main body part; a pressure chamber; a fluid supplying section; a linear motion guide having an outer cylindrical body and a spline shaft, which is provided in the outer cylindrical body and capable of moving in an axial direction thereof, and which is prohibited to rotate with respect to the outer cylindrical body so as to transmit a rotational force to the spline shaft through the outer cylindrical body; and a rotation transmitting plate being provided between a lower end of the spline shaft and an upper face of the carrier, the rotation transmitting plate being capable of tiltably supporting the carrier and transmitting a rotational force of the spline shaft to the carrier.

Abstract: A nozzle according to the invention includes a liquid flow passage through which a liquid flows, a gas flow passage through which a gas flows, the gas flow passage communicating with the liquid flow passage and feeding the gas to the liquid flow passage, and a plasma generating mechanism for generating plasma in the gas fed from the gas flow passage to the liquid flow passage, in which the plasma generating mechanism includes a first electrode provided so as to be exposed to an inside of the liquid flow passage, a second electrode provided so as not to be exposed to the inside of the liquid flow passage and so as to be exposed to an inside of the gas flow passage, and a power source for applying a predetermined voltage across the first electrode and the second electrode, and in which the liquid with which the gas including the generated plasma is mixed as bubbles having a predetermined diameter is spouted.

Abstract: The work processing apparatus of the present invention comprises: a processing section for processing or treating a work; and a liquid chemical supplying section for supplying a liquid chemical to the processing section. The liquid chemical supplying section includes: a plurality of liquid chemical bags for storing the liquid chemical; a bag holding part in which the liquid chemical bags are attached and held; and a liquid feeding part, to which the liquid chemical bags are detachably connected, for feeding the liquid chemical from the liquid chemical bags to the processing section. Each of the liquid chemical bags is produced by overlapping flexible resin sheets with each other and welding their edge parts to form into a bag. Each of the liquid chemical bags has a port part communicating with an outside. A joint with a valve is attached to each of the port parts.

Abstract: The apparatus for producing a gallium oxide crystal relating to the invention contains a vertical Bridgman furnace containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a crucible shaft provided vertically movably through the base body; and a crucible disposed on the crucible shaft, heated with the heater, the crucible is a crucible containing a Pt-based alloy, the furnace body has an inner wall that is formed as a heat-resistant wall containing plural ring shaped heat-resistant members each having a prescribed height accumulated on each other, and the ring shaped heat-resistant members each contain plural divided pieces that are joined to each other to the ring shape.

Abstract: A polishing apparatus which is an index system polishing apparatus which includes a polishing head for holding a wafer, a plurality of turn tables to which polishing pads for polishing the wafer are attached, and a loading/unloading stage for loading the wafer to the polishing head or unloading the wafer from the polishing head, and which polishes the wafer while switching the turn tables to be used for polishing the wafer held at the polishing head by causing the polishing head to perform rotation movement, the polishing apparatus including a turn table upward and downward movement mechanism which allows the turn table to move upward and downward. With this polishing apparatus, it is possible to reduce an amount of displacement caused when moment load is applied on the polishing head during polishing.

Abstract: The method of the present invention is capable of polishing a high hardness work at high polishing efficiency. The method comprises the steps of: pressing a surface of the work onto a polishing part of a rotating polishing plate; and supplying slurry while performing the pressing step. The method is characterized in that an activated gas, which has been activated by gas discharge, is turned into bubbles and mixed into the slurry.

Abstract: The method of the present invention comprises the steps of: previously obtaining correlation data between surface properties of the polishing pad dressed under a plurality of stages of dressing conditions and polishing effects of the work polished by the polishing pad dressed under the dressing conditions; determining an assumed dressing condition capable of achieving an object polishing effect from the correlation data; dressing the polishing pad under the assumed dressing condition determined; polishing the work; cleaning the polishing pad which has been used for polishing the work; and measuring a surface property of the cleaned polishing pad.

Abstract: The polishing apparatus comprises: a dressing section for dressing a polishing pad; a measuring section for measuring a surface property of the polishing pad; a polishing result measuring section for measuring a polishing result of a work; a storing section for storing correlation data between dressing condition data for dressing the polishing pad, surface property of the polishing pad and polishing results, which are learned by an artificial intelligence; and an input section for inputting an object polishing result. The artificial intelligence performs a first arithmetic process, in which the surface property of the polishing pad corresponding to the object polishing result is inversely estimated on the basis of the correlation data, and a second arithmetic process, in which the corresponding dressing condition is derived on the basis of the surface property of the polishing pad inversely estimated.

Abstract: A polishing apparatus includes: a plurality of polishing heads for holding a wafer, a polishing pad for polishing the wafer, a rotatable turn table having the polishing pad attached thereto, a turn table driving mechanism for rotating the turn table, a plurality of wafer-detecting sensors for detecting coming off of the wafer from the polishing head during polishing, wherein the polishing apparatus has the wafer-detecting sensor disposed above peripheral portions of the respective polishing heads and on each downstream side in a rotation direction of the turn table with respect to the respective polishing heads. The polishing apparatus can detect coming off of a wafer from a polishing head during polishing more rapidly, and can prevent a breakage of the wafer thereby.

Abstract: To provide a dressing apparatus capable of uniformly dressing a polishing pad. The apparatus includes first and second dressing grind stones 51 and 52 which grind polishing pads 17 and 18 by moving in a radial direction of upper and lower polishing plates 12 and 14 while abutting on corresponding polishing pads 17 and 18, in which the first and second dressing grind stones 51 and 52 are set so as to have: an inner side region portion P; an outer side region portion Q; and an intermediate region portion R, wherein the length of each of the inner side region portion P and the outer side region portion Q extending in a circumferential direction of the polishing plates 12 and 14 is longer than the length of the intermediate region portion R extending in a circumferential direction of the polishing plates.

Abstract: To provide a single crystal production apparatus that is capable of prolonging the lifetime of a heater, and capable of reducing the cost. A single crystal production apparatus of the present invention is the single crystal production apparatus which produces a single crystal of a metal oxide in an oxidative atmosphere, containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a high frequency coil heating the heater through high frequency induction heating; and a crucible heated with the heater, the heater containing a Pt-based alloy and having a zirconia coating on an overall surface of the heater.

Abstract: The present invention provides a polishing apparatus including: a turntable which has a polishing pad attached thereto; a polishing head configured to hold a wafer; a tank configured to store a polishing agent; a polishing agent supply mechanism which supplies the polishing agent stored in the tank to the polishing pad; a waste liquid receiver which collects the polishing agent flowing down from an upper side of the turntable; and a circulation mechanism which is connected to the waste liquid receiver and supplies the polishing agent collected by the waste liquid receiver to the tank, the polishing agent is supplied to the polishing pad from the tank by the polishing agent supply mechanism, the used polishing agent which flows down from the upper side of the turntable is collected by the waste liquid receiver, a surface of the wafer held by the polishing head is rubbed against the polishing pad so that it is polished while supplying the collected polishing agent to the tank to circulate the polishing agent, a

Abstract: A turn table transport carriage configured to carry a turn table removed from a polishing apparatus or turn table which is to be disposed to the polishing apparatus, turn table transport carriage including a turn table holding section configured to hold the turn table, support base which supports the turn table holding section from a lower side, elevating mechanism which moves up and down the turn table holding section, and inclination mechanism which inclines the turn table holding section holding the turn table, the turn table transport carriage being characterized by enabling carrying the turn table in a state where the turn table holding section holding the turn table is inclined by the inclination mechanism. Consequently, there is provided the turn table transport carriage which has a narrow width at the time of carrying the turn table and can reduce a width of a passage for carrying the turntable.

Abstract: A polishing apparatus which is an index system polishing apparatus which includes a polishing head for holding a wafer, a plurality of turn tables to which polishing pads for polishing the wafer are attached, and a loading/unloading stage for loading the wafer to the polishing head or unloading the wafer from the polishing head, and which polishes the wafer while switching the turn tables to be used for polishing the wafer held at the polishing head by causing the polishing head to perform rotation movement, the polishing apparatus including a turn table upward and downward movement mechanism which allows the turn table to move upward and downward. With this polishing apparatus, it is possible to reduce an amount of displacement caused when moment load is applied on the polishing head during polishing.