Abstract: A scanning tunneling microscopy based potentiometry system and method for the measurements of the local surface electric potential is presented. A voltage compensation circuit based on this potentiometry system and method is developed and employed to maintain a desired tunneling voltage independent of the bias current flow through the film. The application of this potentiometry system and method to the local sensing of the spin Hall effect is outlined herein, along with the experimental results obtained.
Type:
Grant
Filed:
December 6, 2019
Date of Patent:
April 13, 2021
Assignees:
University of Maryland, College Park, Government of the United States of America as Represented by the Director, National Security Agency
Inventors:
Ting Xie, Michael Dreyer, Isaak D. Mayergoyz, Robert E. Butera, Charles S. Krafft