Abstract: A magneto-resistive (MR) device and process for making the MR device are disclosed. The MR device has a pinned layer, a spacer layer proximate to the pinned layer, and a free layer proximate to the spacer layer. The free layer comprises a first magnetic layer proximate to the spacer layer, the first magnetic layer having a positive magnetostriction, a laminate magnetic insertion layer proximate to the first magnetic layer, and a second magnetic layer proximate to the magnetic insertion layer, the second magnetic layer having a negative magnetostriction. The laminate magnetic insertion layer has a first magnetic sublayer and a first non-magnetic sublayer proximate to the first magnetic sublayer. With the disclosed laminate magnetic insertion layer, the free layer has a low overall magnetostriction and results in a MR device with a high MR ratio.

Abstract: Techniques for improving flash-oriented file system garbage collection are disclosed. In some embodiments, the techniques may be realized as a method for improving garbage collection of a flash-oriented file system comprising classifying data according to a first data type area of a plurality of data type areas, creating, using a host device subsystem, a log for a physical erase block of the flash memory, creating, using the host device subsystem, the plurality of data type areas for the log, and writing the data to the first data type area of the plurality of data type areas based on the classification of the data.

Abstract: Techniques for improving flash-oriented file system garbage collection are disclosed. In some embodiments, the techniques may be realized as a method for improving garbage collection of a flash-oriented file system comprising classifying data according to a first data type area of a plurality of data type areas, creating, using a host device subsystem, a log for a physical erase block of the flash memory, creating, using the host device subsystem, the plurality of data type areas for the log, and writing the data to the first data type area of the plurality of data type areas based on the classification of the data.

Abstract: The present disclosure relates to methods and systems for performing operations in a communications protocol. An example method can include submitting, from a device, a request for a queue entry representing a command from a host comprising a request for data stored at a device memory location; receiving the command from the host; and executing the command. An example method can also include selecting a bit string representing whether a requested data stream has been received, and storing the bit string into a memory buffer portion to mark the buffer portion. The method can include receiving, into the memory buffer, the stream. The method can include retrieving contents of the buffer portion, and determining whether the contents contain the bit string. If so, the method can include determining that portions of the stream have not been received. Otherwise, the method can include determining that the stream has been received.

Abstract: The present invention generally relates to a method for forming a smooth gap of a damascene write pole. An opening having a side wall with a first angle with respect to vertical is formed in a fill layer, and a first non-magnetic layer is deposited into the opening by ion beam deposition. The ion beam is delivered to the side wall at a second angle with respect to vertical. The ratio of the first angle to the second angle ranges from about 250 to about 3.5.

Abstract: In one embodiment, a magnetic head includes a lower magnetic shield layer positioned at a media-facing surface, a pinned layer positioned above the lower magnetic shield layer at the media-facing surface, at least two MR elements extending in an element height direction by a first length positioned above the pinned layer and separated in a cross-track direction by an inner layer, bias layers extending in the element height direction by a second length positioned on outside edges of the MR elements and the pinned layer, and current paths positioned above and in electrical communication with the bias layers on either side of the inner layer, each current path extending in the element height direction away from the media-facing surface by a third length.

Abstract: The embodiments disclosed herein provide a flash aware snapshot technique for two-way data recovery and back-in-time execution. The disclosed snapshot technique is designed to reduce the number of write operations to improve the performance on flash-based storage systems. The disclosed snapshot technique can guarantee data recovery no matter which of the production site or the backup site fails. The disclosed snapshot technique can also reduce the storage space requirement for snapshots by exploiting content locality. Furthermore, the disclosed snapshot technique can be implemented using hardware, software, firmware, or any combination of them. In case of hardware implementation, only minor hardware modifications are needed.

Abstract: A storage device may include a controller and a plurality of memory devices logically divided into a plurality of pages. Each page in the plurality of pages may include a plurality of bits. The controller may be configured to: apply a read level to a control gate of a transistor for each respective bit in the plurality of bits; determine, based on an amount of current that flows through the transistor, a respective value for each bit from the respective plurality of bits; determine, based on the respective values for the respective plurality of bits, an error ratio that indicates a number of bits from the plurality of bits that are written as a first bit value but are incorrectly read as a second bit value relative to a number of bits from the plurality of bits that are written as the second bit value but are incorrectly read as the first bit value; and adjust, based on the error ratio, the read level.

Abstract: The present disclosure relates to methods and systems for performing operations in a communications protocol. An example method can include submitting, from a device, a request for a queue entry representing a command from a host comprising a request for data stored at a device memory location; receiving the command from the host; and executing the command. An example method can also include selecting a bit string representing whether a requested data stream has been received, and storing the bit string into a memory buffer portion to mark the buffer portion. The method can include receiving, into the memory buffer, the stream. The method can include retrieving contents of the buffer portion, and determining whether the contents contain the bit string. If so, the method can include determining that portions of the stream have not been received. Otherwise, the method can include determining that the stream has been received.

Abstract: A heat-assisted magnetic recording medium has a heat-sink layer, a chemically-ordered FePt alloy magnetic layer and a perovskite oxide intermediate layer between the heat-sink layer and the magnetic layer. The perovskite oxide intermediate layer may function as both a seed layer for the magnetic layer and a thermal barrier layer, as just a seed layer for the magnetic layer, or as just a thermal barrier layer. The intermediate layer is formed of a material selected from a ABO3 perovskite oxide (where A is selected from one or more of Ba, Sr and Ca and B is selected from one or more of Zr, Ce, Hf, Sn, Ir, and Nb), and a A2REBO6 rare earth double perovskite oxide (where RE is a rare earth element, A is selected from Ba, Sr and Ca, and B is selected from Nb and Ta).

Abstract: Aspects of the present disclose related to a voltage-controlled magnetic anisotropy (VCMA) switching device using an external ferromagnetic biasing film. Aspects of the present disclose provide for a magnetoresistive random access memory (MRAM) device. The MRAM device generally includes a substrate, at least one magnetic tunnel junction (MTJ) stack disposed on the substrate, wherein the MTJ stack comprises a tunnel barrier layer between a first ferromagnetic layer having a fixed magnetization and a second ferromagnetic layer having unfixed magnetization, and a magnet disposed adjacent to the second ferromagnetic layer.

Abstract: A scissor type magnetic sensor having a magnetic bias structure extending from the back edge of first and second magnetic free layers. The magnetic bias structure is constructed of a magnetic material having a high magnetic moment, such as NiFe with a high Fe content or CoFe. The high magnetic moment bias structure reduces magnetic signal asymmetry while also maintaining high signal amplitude.

Abstract: The present disclosure relates to methods and systems for performing operations in a communications protocol. An example method can include submitting, from a device, a request for a queue entry representing a command from a host comprising a request for data stored at a device memory location; receiving the command from the host; and executing the command. An example method can also include selecting a bit string representing whether a requested data stream has been received, and storing the bit string into a memory buffer portion to mark the buffer portion. The method can include receiving, into the memory buffer, the stream. The method can include retrieving contents of the buffer portion, and determining whether the contents contain the bit string. If so, the method can include determining that portions of the stream have not been received. Otherwise, the method can include determining that the stream has been received.

Abstract: In some examples, a method includes determining, by a processor of a controller of a data storage device, that a voltage level of a capacitor in the data storage device is above a threshold voltage value, wherein the data storage device includes a capacitor circuit, and wherein the capacitor circuit includes the capacitor. The method further includes controlling, by the processor, the capacitor circuit to cause the capacitor to provide power to circuitry associated with memory devices of the data storage device along with power provided by a host device operably connected to the data storage device.

Abstract: The present disclosure relates to apparatus, systems, and methods that implement a less-recently-used data eviction mechanism for identifying a memory block of a cache for eviction. The less-recently-used mechanism can achieve a similar functionality as the least-recently-used data eviction mechanism, but at a lower memory requirement. A memory controller can implement the less-recently-used data eviction mechanism by selecting a memory block and determining whether the memory block is one of the less-recently-used memory blocks. If so, the memory controller can evict data in the selected memory block; if not, the memory controller can continue to select other memory blocks until the memory controller selects one of the less-recently-used memory blocks.

Abstract: The present disclosure relates to caches, methods, and systems for using an invalidation data area. The cache can include a journal configured for tracking data blocks, and an invalidation data area configured for tracking invalidated data blocks associated with the data blocks tracked in the journal. The invalidation data area can be on a separate cache region from the journal. A method for invalidating a cache block can include determining a journal block tracking a memory address associated with a received write operation. The method can also include determining a mapped journal block based on the journal block and on an invalidation record. The method can also include determining whether write operations are outstanding. If so, the method can include aggregating the outstanding write operations and performing a single write operation based on the aggregated write operations.

Abstract: A low permeability electrical feed-through involves a laminated structure having a conductor layer sandwiched between adjacent insulator layers, which are sandwiched between adjacent diffusion control layers, where the laminated structure provides a relatively narrow and long, high aspect ratio diffusion channel to inhibit the leakage of gas from within a sealed device to the external environment. The electrical feed-through may comprise lower and upper electrical connection pads that are positioned within different regions of the feed-through but still electrically connected by way of a first via positioned in a sealed region, the conductor layer, and a second via positioned in an external environment region.

Abstract: A disk drive includes a controller and at least one disk, which may include a first I-region, a second I-region, and an E-region. The first and second I-region may have a first final logical block address (LBA) and a second final LBA, respectively. The controller may be configured to cause information to be written to the first I-region and the second I-region using a first type and a second type of magnetic recording, respectively. The controller also may be configured to set at least one of the first final LBA or the second final LBA to a final LBA value higher than the at least one of the first final LBA or the second final LBA, respectively, after writing user data to at least a portion of the first I-region or the second I-region and without removing the user data.

Abstract: The present disclosure generally relates to SHE-MRAM memory cells. A memory cell array comprises one or more memory cells, wherein each of the one or more memory cells comprises a gate electrode, an insulating layer, a spin orbit material electrode, a MTJ, and a top electrode parallel to the gate electrode. The gate electrode and the top electrode are perpendicular to the spin orbit material electrode. By applying a voltage to the gate electrode, passing a current along the spin orbit material electrode, and utilizing Rashba and/or spin hall effects, writability of select memory cells is enhanced, allowing for individual memory cells to be written upon without disturbing neighboring memory cells. Additionally, Rashba and/or spin hall effects in neighboring memory cells may be suppressed to ensure only the selected memory cell is written.

Abstract: According to one embodiment, a magnetic head includes a write element, a read element, and a heating element disposed between the write element and the read element. When power is applied to the heating element, either the read element or the write element projects beyond a plane of an air-bearing surface (ABS) of the magnetic head, and when power is not applied to the heating element, a portion of the ABS of the magnetic head facing a magnetic disk close to the heating element has a concave shape. In another embodiment, when power is applied to the heating element, at least one of a portion of the read element and a portion of the write element approaches a magnetic disk, and when power is not applied to the heating element, a portion of the ABS of the magnetic head facing a magnetic disk close to the heating element has a concave shape.