Abstract: In order to optimize defect contrast in a charged particle beam device that inverts charged particles directly above a sample and observes the electrons, this charged particle beam device is provided with a charged particle source, an electron gun control device which applies a first voltage to the charged particle source, a substrate voltage control device which applies a second voltage to a sample, an image forming optical system which includes an imaging lens for imaging charged particles incident from the direction of the sample, a detector which includes a camera for detecting the charged particles, and an image processing device which processes the detected signal, wherein the imaging optical system is configured so as not to image secondary electrons emitted from the sample, but forms an image with mirror electrons bounced back by the electric field formed on the sample by means of the potential difference between the first and the second voltages.

Abstract: There is provided a plasma processing apparatus that suppress the contamination of a sample and improves process yield or an inner component of a plasma processing apparatus or a manufacturing method for the inner component. A plasma processing apparatus processes a wafer which is a processing target placed in a processing chamber in an inside of a vacuum chamber using plasma formed from a processing gas supplied to an inside of the processing chamber. A surface of a component that is placed in the inside of the processing chamber and faces the plasma is made of a dielectric material. The dielectric material includes a first material that combines with the supplied processing gas and is volatilized and a second material that combines with the processing gas to produce a non-volatile compound, a volume of the non-volatile compound being increased before the combination.

Abstract: The present invention provides an electron microscope and an observation method capable of observing secondary electrons in the atmosphere. In detail, a charged particle microscope of the invention includes: a partition wall that separates a non-vacuum space in which a sample is loaded from a vacuum space inside a charged particle optical lens barrel; an upper electrode; a lower electrode on which the sample is loaded; a power supply for applying a voltage to at least one of the upper electrode and the lower electrode; a sample gap adjusting mechanism for adjusting a gap between the sample and the partition wall; and an image forming unit for forming an image of the sample based on the current absorbed by the lower electrode. The secondary electrons are selectively measured by using an amplification effect due to ionization collision between electrons and gas molecules generated when a voltage is applied between the upper electrode and the lower electrode.

Abstract: In an is-TPG method in which lasers having two different wavelengths are used to generate a wavelength-variable far-infrared light, a far-infrared light (TPG light) having an unstable output at a broad wavelength is also slightly generated at the same time with only one laser light. The generated is-TPG and the TPG light are converted, after passing through a specimen, to near-infrared light inside a nonlinear optical crystal for detection and are observed by a detector. The signal light output of the is-TPG light becomes unstable due to the TPG light. According to the present invention, the TPG light is removed by means of a slit and the like (filter) immediately before the specimen and is not introduced into the nonlinear optical crystal for detection. At this time, by using a change in the emission direction when the frequency of the is TPG light is changed, the filter is moved in accordance with the frequency so that only the is-TPG light passes therethrough (see FIG. 1C).

Abstract: Provided is a technique capable of implementing efficient transport and processing related to multi-step processing in the case of a link-type vacuum processing apparatus with related to an operating method of a vacuum processing apparatus. The operating method of the vacuum processing apparatus according to the embodiment, in order to minimize time required for all processing of a plurality of wafers in a multi-step processing, includes a first step (steps 601 to 607) of selecting one first processing unit and one second processing unit from a plurality of processing units for each wafer and determining a transport schedule including a transport path using the selected processing units. In the first step, for at least one wafer, a transport schedule including a transport path is configured using the selected first processing unit by excluding at least one first processing unit from the plurality of first processing units.

Abstract: This automated analyzer comprises: a sample disk for mounting sample containers accommodating samples; a sample disk control unit for controlling the rotation of the sample disk; a sample dispensing probe for sucking the sample out of a sample container that has arrived at a prescribed suction position as a result of the rotation of the sample disk; a photometer for carrying out automatic biochemical analysis; a blood coagulation time detection unit for carrying out blood coagulation time analysis; a light-blocking cover that covers the photometer and blood coagulation time detection unit; and a sample information output unit for outputting sample information.

Abstract: There is provided an electrolyte measuring device that can decrease a liquid amount used for measurement, in which stable sealing can be provided in connecting passages of ion selective electrodes to each other with no gap, while maintaining high measurement accuracy of an existing ion selective electrode, and a residing sample liquid can be greatly decreased. In a flow-type ion selective electrode, a sealing member is used, which can be brought into intimate contact with a passage connecting unit to near a passage hole. A gap regulating member is provided to keep a gap between the electrodes constant and to prevent the sealing member from being excessively pressed. An electrode case has a structure suitable for the sealing member for allowing the alignment and holding of the sealing member.

Abstract: An analysis device of the present invention is provided with a sample introduction unit that introduces a sample into a mass spectroscope; a sample condensation unit that treats the sample introduced into the device; a detection unit that analyzes the sample treated by a treatment unit; and a control unit that controls the sample introduction unit, the sample condensation unit, and the detection unit. The sample introduction unit includes a sample introduction valve, and the sample condensation unit includes an elution valve and a cleaning valve, and the cleaning valve is disposed between the sample introduction valve and the elution valve.

Abstract: To acquire a correction image by performing a sub-pixel shift process for shifting an image using a pixel interpolation filter by a pixel shift amount between pixels and a frequency correction process for correcting a frequency characteristic of the image after shifted.

Abstract: The invention is directed to a charged particle beam apparatus that enables temperature maintenance in a cooling unit provided inside a vacuum application apparatus using a refrigerant. The charged particle beam apparatus includes a cooling tank that contains a refrigerant for cooling a cooling unit, a cooling pipe that supplies the refrigerant from the cooling tank to the cooling unit, and a unit that leads the refrigerant to liquefy when the refrigerant is biased to a solid.

Abstract: The purpose of the present invention is to provide a pattern measurement device that is capable of highly accurately measuring a groove bottom, hole bottom, or the like, regardless of the accuracy of the formation of a deep groove or deep hole. To that end, the present invention proposes a pattern measurement device provided with a computation device for measuring the dimensions of a pattern formed on a sample on the basis of a signal obtained by a charged particle beam device, wherein the computation device determines the deviation between a first part of the pattern and a second part of the pattern at a different height than the first part and pattern dimension values on the basis of a detection signal obtained on the basis of the scanning of the sample by a charged particle beam and corrects the pattern dimension values using the deviation determined from the detection signal and relationship information indicating the relationship between the pattern dimensions and the deviation.

Abstract: A defect observation device detects a defect with high accuracy regardless of a defect size. One imaging configuration for observing an observation target on a sample is selected from an optical microscope, an optical microscope, and an electron microscope, and an imaging condition of the selected imaging configuration is controlled.

Abstract: A defect inspection apparatus includes: an illumination unit configured to illuminate an inspection object region of a sample with light emitted from a light source; a detection unit configured to detect scattered light in a plurality of directions, which is generated from the inspection object region; a photoelectric conversion unit configured to convert the scattered light detected by the detection unit into an electrical signal; and a signal processing unit configured to process the electrical signal converted by the photoelectric conversion unit to detect a defect in the sample. The detection unit includes an imaging unit configured to divide an aperture and form a plurality of images on the photoelectric conversion unit. The signal processing unit is configured to synthesize electrical signals corresponding to the plurality of formed images to detect a defect in the sample.

Abstract: A state of a sample surface is accurately determined without lowering analysis efficiency. There is provided an apparatus for determining a state of a sample to be analyzed contained in a container, in which the apparatus acquires an image of the sample, analyzes a position and a size of an object to be detected with respect to a detection range set in the image by using the image of the sample, and determines the state of the sample based on a result of the analysis.

Abstract: A charged particle beam device using a multi-pole type aberration corrector includes: a charged particle source which generates a primary charged particle beam; an aberration correction optical system which corrects aberrations of the primary charged particle beam; a detection unit which detects a secondary charged particle generated from a sample irradiated with the primary charged particle beam whose aberrations have been corrected; an image forming unit which forms a charged particle image of the sample from a signal obtained by detecting the secondary charged particle; an aberration correction amount calculation unit which processes the charged particle image, separates aberrations having different symmetries, selects an aberration to be preferentially corrected from the separated aberrations, and calculates a correction amount of the aberration correction optical system; and an aberration correction optical system control unit which controls the aberration correction optical system based on the calculate

Abstract: An electron microscope device includes: a first detection means disposed at a high elevation angle for detecting electrons having relatively low energy; a second detection means disposed at a low elevation angle for detecting electrons having relatively high energy; a means for identifying, from a first image obtained from a first detector, a hole region in a semiconductor pattern within a preset region; a means for calculating for individual holes, from a second image obtained from a second detector, indexes pertaining to an inclined orientation and an inclination angle, on the basis of the distance between the outer periphery of the hole region and the hole bottom; and a means for calculating, from the results measured for the individual holes, indexes pertaining to an inclined orientation of the hole and an inclination angle of the hole as representative values for the image being measured.

Abstract: To provide a sample for measuring particles enabling the three-dimensional particulate shape to be measured and the particulate species to be evaluated, the sample for measuring particles includes a substrate; isolated nanoparticles to be measured which are disposed on the substrate; and isolated standard nanoparticles which are disposed on the substrate in the vicinity of the isolated nanoparticles to be measured.

Abstract: Provided is a specimen processing system which can contribute to space saving. The specimen processing system includes a put-in module which puts a specimen on a put-in tray in a holder, a housing module which houses the specimen from the holder in a housing tray, and a stock module which stocks the holder, in which an empty holder which is generated because the specimen is housed is directly conveyed to the put-in module without being conveyed to the stock module and is used for putting a new specimen therein.

Abstract: A low noise blanking unit corresponds to a wide range of acceleration voltages (from several times higher than related voltages to low acceleration voltages) of an electron beam. A blanking unit of the measurement and inspection device includes a blanking control circuit, in which (i) an upper and a lower blanking electrodes are arranged in the irradiation direction of an electron beam; electrodes on the reverse sides of two opposing electrodes in each of the blanking electrodes arranged in the same direction are connected with the ground, (ii) when blanking is ON, positive voltages are output to remaining electrodes of the upper blanking electrode and negative voltages are output to remaining electrodes of the lower blanking electrode, and (iii) when the blanking is OFF, the same ground reference signal is output to the remaining electrodes of the upper blanking electrode and to the remaining electrodes of the lower blanking electrode.

Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.