Abstract: A method for inspecting insulation property of a capacitor, comprises the steps of: applying a DC voltage V1 higher than a voltage V0 to a capacitor to be inspected, in which the voltage V0 is predetermined for inspection of insulation property of the capacitor, to generate an electric current in the capacitor; lowering the DC voltage V1 to the voltage V0 at a lapse of a time t1, to convert the electric current in the capacitor into a continuously unvaried electric current; determining a value i0 of the continuously unvaried electric current; and comparing the value i0 with an upper limit of a leakage current which is predetermined for the capacitor.

Abstract: A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of quartz crystal, in which each of the quartz layers consists of a crystalline phase and an amorphous phase, and percentage of the crystalline phase in the quartz layer farther from the substrate is larger than percentage of the crystalline phase in the quartz layer adjacent to the substrate; and producing an epitaxially grown quartz crystal film on the surface of the quartz layer farther from the substrate by a reaction between silicon alkoxide and oxygen.

Abstract: A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of quartz crystal, in which each of the quartz layers consists of a crystalline phase and an amorphous phase, and percentage of the crystalline phase in the quartz layer farther from the substrate is larger than percentage of the crystalline phase in the quartz layer adjacent to the substrate; and producing an epitaxially grown quartz crystal film on the surface of the quartz layer farther from the substrate by a reaction between silicon alkoxide and oxygen.

Abstract: A single crystal of quartz thin film and a production method therefor are provided. A method for producing a quartz epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a quartz on the substrate. The single crystal of quartz thin film has excellent crystalinity, and optical properties.

Abstract: A quartz oscillator includes a base having a recessed portion provided on one face thereof by processing to have an inverse mesa shape, a quartz thin-film formed on the other face of the base by epitaxial growth to have a thickness of 10 ?m or less, a vibrating reed portion, and excitation electrodes for mechanically supporting the quartz thin-film and for vibrating the vibrating reed portion.

Abstract: A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of quartz crystal, in which each of the quartz layers consists of a crystalline phase and an amorphous phase, and percentage of the crystalline phase in the quartz layer farther from the substrate is larger than percentage of the crystalline phase in the quartz layer adjacent to the substrate; and producing an epitaxially grown quartz crystal film on the surface of the quartz layer farther from the substrate by a reaction between silicon alkoxide and oxygen.

Abstract: A single crystal of quartz thin film and a production method therefor are provided. A method for producing a quartz epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a quartz on the substrate. The single crystal of quartz thin film has excellent crystalinity, and optical properties.

Abstract: A quartz oscillator includes a base having a recessed portion provided on one face thereof by processing to have an inverse mesa shape, a quartz thin-film formed on the other face of the base by epitaxial growth to have a thickness of 10 &mgr;m or less, a vibrating reed portion, and excitation electrodes for mechanically supporting the quartz thin-film and for vibrating the vibrating reed portion.

Abstract: The invention provides a method for testing oscillators in which cracks and chips on oscillator chips that may possibly have an effect on the oscillation characteristics can be detected efficiently, without using an optical examination device and an image processing device, which require troublesome adjustment and higher cost. When testing the oscillation characteristics of oscillator chips, the method comprises a network analyzer, an upper electrode, a lower electrode, an oscillator chip, a bush, and a personal computer. The personal computer is connected to the network analyzer using a GP-IB interface cable, and is capable of storing, displaying, and comparing all measurement results of the network analyzer. The upper electrode can be shifted vertically by a vertical mechanism.

Abstract: A quartz oscillator includes a base, a quartz thin-film formed on the base by epitaxial growth, a vibrating reed portion formed by processing the quartz thin-film, and excitation electrodes for vibrating the vibrating reed portion. At least one of the excitation electrodes may be formed by depositing a metal. The material for the base may include a single-element semiconductor, a compound semiconductor, and an oxide. When a semiconductor is used for the base, a semiconductor circuit may be provided to the base to form a module including a quartz oscillator.

Abstract: A single crystal thin film and a production method therefor are provided. A method for producing a crystal epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a crystal on the substrate. The single crystal thin film has excellent crystalinity, and optical properties.

Abstract: A small-parts feed and conveying device includes a movable section in which trains having a plurality of through holes are arranged along a direction of conveying the small parts, a parts drawing means for drawing the small parts to parts-conveying surface and holding them by reducing the pressure of an air opposite thereto, a conveying path cover in which open faces of spaces for conveying the parts slidably come into contact with the parts-conveying surface, and a parts mixing means for blowing a pressurized air to the small parts from nozzles in the conveying path cover and mixing them. The through holes may be arranged so as to form a plurality of parallel trains. The movable section may be a rotor or a belt.