Patents Assigned to Inpria Corporation
  • Patent number: 11392029
    Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.
    Type: Grant
    Filed: November 5, 2019
    Date of Patent: July 19, 2022
    Assignee: Inpria Corporation
    Inventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Michael K. Kocsis, Alan J. Telecky, Brian J. Cardineau
  • Patent number: 11392028
    Abstract: Patterning compositions are described based on organo tin dodecamers with hydrocarbyl ligands, oxo ligands, hydroxo ligands and carboxylato ligands. Alternative dodecamer embodiments have organo tin ligands in place of hydrocarbyl ligands. The organo tin ligands can be incorporated into the dodecamers from a monomer with the structure (RCC)3SnQ, where R is a hydrocarbyl group and Q is a alkyl tin moiety with a carbon bonded to the Sn atom of the monomer and with a Sn bonded as a replacement of a quaternary carbon atom with bonds to 4 carbon atoms. Some or all of the carboxylato and hydroxyl ligands can be replaced with fluoride ions. Good EUV patterning results are obtained with the dodecamer based patterning compositions.
    Type: Grant
    Filed: April 4, 2019
    Date of Patent: July 19, 2022
    Assignee: Inpria Corporation
    Inventors: Brian J. Cardineau, William Earley, Stephen T. Meyers, Kai Jiang, Jeremy T. Anderson
  • Patent number: 11392031
    Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.
    Type: Grant
    Filed: May 28, 2020
    Date of Patent: July 19, 2022
    Assignee: Inpria Corporation
    Inventors: Jason K. Stowers, Alan J. Telecky, Douglas A. Keszler, Andrew Grenville
  • Patent number: 11347145
    Abstract: High etch contrast materials provide the basis for using pre-patterned template structure with a template hardmask having periodic holes and filler within the holes that provides the basis for rapidly obtaining high resolution patterns guided by the template and high etch contrast resist. Methods are described for performing the radiation lithography, e.g., EUV radiation lithography, using the pre-patterned templates. Also, methods are described for forming the templates. The materials for forming the templates are described.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: May 31, 2022
    Assignee: Inpria Corporation
    Inventors: Jason K. Stowers, Andrew Grenville
  • Patent number: 11327398
    Abstract: Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.
    Type: Grant
    Filed: April 30, 2019
    Date of Patent: May 10, 2022
    Assignees: Samsung Electronics Co., Ltd., Inpria Corporation
    Inventors: Chawon Koh, Tsunehiro Nishi, Brian Cardineau, Sangyoon Woo, Jason Stowers, Soo Young Choi
  • Patent number: 11300876
    Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.
    Type: Grant
    Filed: June 20, 2019
    Date of Patent: April 12, 2022
    Assignee: Inpria Corporation
    Inventors: Kai Jiang, Stephen T. Meyers, Lauren B. McQuade, Jeremy T. Anderson, Brian J. Cardineau, Benjamin L. Clark, Dominick Smiddy, Margaret Wilson-Moses
  • Publication number: 20220059345
    Abstract: In a method of manufacturing an integrated circuit device, a photoresist layer is formed by coating a photoresist composition on a substrate having a main surface and an edge portion surrounding the main surface. A portion of the photoresist layer is removed from the edge portion of the substrate. After the portion of the photoresist layer is removed, the substrate is processed using a main treatment composition including an organic solvent, acid, and water.
    Type: Application
    Filed: August 18, 2020
    Publication date: February 24, 2022
    Applicants: SAMSUNG ELECTRONICS CO., LTD., INPRIA CORPORATION, TOKYO OHKA KOGYO CO., LTD.
    Inventors: Chawon Koh, Soyeon Yoo, Sooyoung Choi, Tsunehiro Nishi, Kwangsub Yoon, Brian Cardineau, Kumagai Tomoya
  • Patent number: 11187986
    Abstract: Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.
    Type: Grant
    Filed: March 6, 2020
    Date of Patent: November 30, 2021
    Assignee: Inpria Corporation
    Inventors: Mollie Waller, Brian J. Cardineau, Kai Jiang, Alan J. Telecky, Stephen T. Meyers, Benjamin L. Clark
  • Patent number: 11098070
    Abstract: Organotin clusters are described with the formula R3Sn3(O2CR?)5-x(OH)2+x(?3-O) with 0?x<2; R=branched or cycloalkyl with 1 to 31 carbon atoms; R??H or alkyl with 1 to 20 carbon atoms. Three carboxylato ligands are bridging, and two OH ligands are bridging. The remaining two carboxylato ligands are in non-bridging configurations, and the non-bridging carboxylato ligands are exchangeable in solution. Solutions of these clusters are suitable for forming radiation sensitive coatings that can be used to pattern nanometer scale structures. The radiation sensitive coatings are particularly suitable for EUV patterning.
    Type: Grant
    Filed: November 19, 2018
    Date of Patent: August 24, 2021
    Assignee: Inpria Corporation
    Inventors: Brian J. Cardineau, Stephen T. Meyers, Kai Jiang, William Earley, Jeremy T Anderson
  • Patent number: 10975109
    Abstract: A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR?)3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR?2)3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R? is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR?COR?)3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R? and R? are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.
    Type: Grant
    Filed: July 23, 2020
    Date of Patent: April 13, 2021
    Assignee: Inpria Corporation
    Inventors: Joseph B. Edson, Thomas J. Lamkin, William Earley, Truman Wambach, Jeremy T. Anderson
  • Patent number: 10787466
    Abstract: A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR?)3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR?2)3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R? is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR?COR?)3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R? and R? are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.
    Type: Grant
    Filed: April 11, 2018
    Date of Patent: September 29, 2020
    Assignee: Inpria Corporation
    Inventors: Joseph B. Edson, Thomas J. Lamkin, William Earley, Truman Wambach, Jeremy T. Anderson
  • Patent number: 10782610
    Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: September 22, 2020
    Assignee: Inpria Corporation
    Inventors: Jason K. Stowers, Alan J. Telecky, Douglas A. Keszler, Andrew Grenville
  • Patent number: 10775696
    Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.
    Type: Grant
    Filed: January 3, 2019
    Date of Patent: September 15, 2020
    Assignee: Inpria Corporation
    Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
  • Patent number: 10732505
    Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.
    Type: Grant
    Filed: April 29, 2020
    Date of Patent: August 4, 2020
    Assignee: Inpria Corporation
    Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
  • Patent number: 10649328
    Abstract: High etch contrast materials provide the basis for using pre-patterned template structure with a template hardmask having periodic holes and filler within the holes that provides the basis for rapidly obtaining high resolution patterns guided by the template and high etch contrast resist. Methods are described for performing the radiation lithography, e.g., EUV radiation lithography, using the pre-patterned templates. Also, methods are described for forming the templates. The materials for forming the templates are described.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: May 12, 2020
    Assignee: Inpria Corporation
    Inventors: Jason K. Stowers, Andrew Grenville
  • Patent number: 10642153
    Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.
    Type: Grant
    Filed: October 22, 2015
    Date of Patent: May 5, 2020
    Assignee: Inpria Corporation
    Inventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph Burton Edson, Kai Jiang, Douglas A. Keszler, Michael K. Kocsis, Alan J. Telecky, Brian J. Cardineau
  • Patent number: 10627719
    Abstract: Methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.
    Type: Grant
    Filed: August 11, 2017
    Date of Patent: April 21, 2020
    Assignee: Inpria Corporation
    Inventors: Mollie Waller, Brian J. Cardineau, Kai Jiang, Alan J. Telecky, Stephen T. Meyers, Benjamin L. Clark
  • Patent number: 10416554
    Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: September 17, 2019
    Assignee: Inpria Corporation
    Inventors: Stephen T. Meyers, Douglas A. Keszler, Kai Jiang, Jeremy T. Anderson, Andrew Grenville
  • Patent number: 10228618
    Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.
    Type: Grant
    Filed: October 12, 2016
    Date of Patent: March 12, 2019
    Assignee: Inpria Corporation
    Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph Burton Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
  • Patent number: 10025179
    Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.
    Type: Grant
    Filed: December 29, 2015
    Date of Patent: July 17, 2018
    Assignee: Inpria Corporation
    Inventors: Stephen T. Meyers, Douglas A. Keszler, Kai Jiang, Jeremy T. Anderson, Andrew Grenville