Abstract: The present invention relates to a method for reducing lateral growth as well as growth of the bottom surface of crystals in a crystal growing process, wherein before the crystal seed undergoes a growing process the method includes a step of wrapping the crystal seed with metal foil so that all the side surfaces as well as the bottom surface of the crystal seed are surrounded by the foil.

Abstract: The method of making an implant consists on coating of a supporting structure (1) with synthetic hydroxyapatite by immersing the supporting structure (1) in a suspension (3) and triggering of a cavitation in a portion of the suspension (3) being in contact with the supporting structure (1). The suspension (3) is formed by a liquid external phase, advantageously water, and internal phase, i.e. particles of synthetic hydroxyapatite having an average particle size not exceeding 100 nm and containing structural water in an amount from 2 to 6% by weight. The implant is coated with the above described hydroxyapatite subjected to cavitation and a thickness of 50 nm to 1000 nm, advantageously 50 nm to 300 nm.

Abstract: Rods with the transverse cross-section surface area of at least 150 mm2 and tensile strength UTS above 1200 Mpa is produced using a plastic deformation that consisted of one-pass hydrostatic extrusion of the billet 1 made of austenitic steel, with the initial temperature of the billet being below 100° C. The reduction R of the transverse cross-section surface area of the biller (1), which takes place during the extrusion, is at least 2.

Abstract: To manufacture the implant a nanopowder of synthetic hydroxyapatite (Hap) is used having a hexagonal structure, average grain size in a range from 3 to 30 nm and the specific surface area greater than 200 m2/g. First the nanopowder is formed to the desired geometric shape, and then the shape is fixed. In the step of shape information the dried nanopowder is pressed in the mold under the pressure ranging from 50 Mpa to 2 GPa. In the step of fixing the pressed nanopowder at room temperature is subjected to the pressure rising from the ambient value to the peak value selected from a range of 1 to 8 GPa and to a temperature selected from a range of 100° C. to 600° C. for a period of time selected from a range from 30 seconds to 5 minutes. The density of thus produced implant, determined by helium method, is not less than 75% of the theoretical density.

Abstract: The invention consists in passing a laser beam (3) from each of laser sources (1) through its individual first optical system (4), single reflecting this beam (3) from a substantially flat individual reflecting surface (7) towards an input facet (10?) and focusing this beam (3) by a second common optical system on the input facet (10?) of the fiber (10). The laser beams (3) are emitted by laser modules (1), each containing a single laser source in an individual housing (2) with a first optical system (4), fixed with respect to the housing (2). The housing (2) of each laser module (1) is mounted in a holder (17, 20). The second optical system (9) is placed directly in front of the input facet (10?) of the fiber (10). An axis (12) of each first optical system (3) forms with an axis (13) of the second optical system (9) an angle (?) ranging between 45 (??) and 145 (??) degrees.

Abstract: The method consists of subjecting a coarse-grained titanium semi-product (1) with the pure titanium content of at least 99 wt % to a plastic deformation. In said plastic deformation the transverse cross-section surface area of the titanium semi-product is reduced by hydrostatic extrusion in which the titanium semi-product is the billet (1) extruded through the die (4). The reduction (R) of the transverse cross-section of the titanium billet (1) is realized in at least three but not more than five consecutive hydrostatic extrusion passes at the initial temperature of the billet (1) not above 50° C. and the extrusion velocity not above 50 cm/s. Prior to each hydrostatic extrusion pass, the titanium billet is covered with a friction-reducing agent. During the first hydrostatic extrusion pass, the reduction of the transverse cross-section surface area of the titanium semi-product is at least four, whereas during the second and third hydrostatic extrusion pass it is at least two and a half.

Abstract: Rods with the transverse cross-section surface area of at least 150 mm2 and tensile strength UTS above 1200 Mpa is produced using a plastic deformation that consisted of one-pass hydrostatic extrusion of the billet 1 made of austenitic steel, with the initial temperature of the billet being below 100° C. The reduction R of the transverse cross-section surface area of the biller (1), which takes place during the extrusion, is at least 2.

Abstract: To manufacture the implant a nanopowder of synthetic hydroxyapatite (Hap) is used having a hexagonal structure, average grain size in a range from 3 to 30 nm and the specific surface area greater than 200 m2/g. First the nanopowder is formed to the desired geometric shape, and then the shape is fixed. In the step of shape information the dried nanopowder is pressed in the mold under the pressure ranging from 50 Mpa to 2 GPa. In the step of fixing the pressed nanopowder at room temperature is subjected to the pressure rising from the ambient value to the peak value selected from a range of 1 to 8 GPa and to a temperature selected from a range of 100° C. to 600° C. for a period of time selected from a range from 30 seconds to 5 minutes. The density of thus produced implant, determined by helium method, is not less than 75% of the theoretical density.

Abstract: The invention relates to a substrate for surface enhanced Raman scattering studies comprising a semiconductor surface with whiskers, coated with metal selected from the group consisting of silver, gold, platinum, copper and/or alloys thereof, where the semiconductor mentioned is a gallium-containing nitride and essentially each whisker contains a linear defect inside.

Abstract: The invention relates to a substrate for surface enhanced Raman scattering studies comprising a semiconductor surface with whiskers, coated with metal selected from the group consisting of silver, gold, platinum, copper and/or alloys thereof, where the semiconductor mentioned is a gallium-containing nitride and essentially each whisker contains a linear defect inside.

Abstract: The laser diode comprising crystalline substrate (1) where set of subsequent n-type layers, set of optically active layers (5) and set of p-type layers is deposited. The set of n-type layers comprise at least one buffer layer (2), bottom n-type cladding layer (3) and n-type bottom waveguide layer. The set of p-type layers comprise at least p-type upper waveguide, which comprises electron blocking layer, upper p-type cladding layer (7) and p-type contact layer (8). The electron blocking layer comprises Inx, AlyGa1-x-y, N alloy doped with magnesium where 1?x>0.001 a 1?y 0. The way of making this invention is based on the epitaxial deposition of subsequent set of the n-type layers (2, 3, 4), set of optically active layers (5) and set of p-type layers (6, 7, 8) where the p-type waveguide layer (6) and p-type contact layer (7) is deposited with presence of indium in plasma assisted molecular beam epitaxy method.

Abstract: A method of measuring oxygen partial pressure in gases, such as hot engine exhaust gases, uses a calibrated luminescence sensor and comprises the steps of bringing nanocrystalline zirconium dioxide ZrO2 (2) in said sensor into contact with a gas to be measured, illuminating the zirconium dioxide with a UV-VIS light pulse emitted from a light source (3) and adapted to induce luminescence of the zirconium dioxide, registering the time dependence of the luminescence intensity of the ZrO2 using a photodetector (4) and a recorder (5), determining a particular intensity, e.g., the maximum intensity of the registered luminescence pulse, and comparing said determined intensity with calibration data of the luminescence intensity as a function of oxygen partial pressure for the sensor temperature at the time of the measurement.