Patents Assigned to Inter-University Research Institute Corporation High Energy Accelerator Research Organization
  • Publication number: 20190145915
    Abstract: Provided are a cell for X-ray analysis and an X-ray analysis apparatus that enable simultaneous X-ray diffraction and X-ray absorption fine structure measurements of a material (sample) in the same field of view on the sample (same position on the sample). The cell for X-ray analysis of the present invention enables simultaneous X-ray diffraction and X-ray absorption fine structure measurements of a sample in the same field of view on the sample and includes a furnace including a space where the sample is held and a focused heater heating the sample, a first window provided to the furnace and through which X-rays directed at the sample is incident, a second window provided to the furnace and from which X-rays emerging from the sample exit, a third window provided to the furnace, and a holder that positions the sample in the space.
    Type: Application
    Filed: November 13, 2018
    Publication date: May 16, 2019
    Applicant: Inter-University Research Institute Corporation High Energy Accelerator Research Organization
    Inventors: Ken'ichi Kimijima, Masao Kimura, Daiji Asahara, Yasuhiro Onishi
  • Publication number: 20190131965
    Abstract: The present invention provides a radiation-damage-compensation-circuit and a SOI-MOSFET that has high radiation resistance. The SOI-MOSFET has the radiation-damage-compensation-circuit to recover the characteristics of the SOI-MOSFET after X-ray irradiation.
    Type: Application
    Filed: October 6, 2016
    Publication date: May 2, 2019
    Applicant: Inter-University Research Institute Corporation High Energy Accelerator Research Organization
    Inventors: Ikuo Kurachi, Yasuo Arai, Miho Yamada
  • Publication number: 20190049310
    Abstract: The present invention separates radiation from an object by a polarization filter 3 into polarized light beams, causes one of the beams to enter a spectrum analyzer 7 through a first optical path, causes the other to enter the spectrum analyzer 7 through a second optical path, and measures the two-color ratio, while causes radiation of a blackbody 2 placed in a vacuum ultralow temperature thermostatic chamber 1 in a quasi-thermal equilibrium state at an ultralow temperature in vacuo to enter the polarization filter 3 through a third optical path, separates the radiation into polarized light beams, causes the beams to each enter the same optical paths as the respective optical paths for the radiation of the object, causes the beams to enter the spectrum analyzer 7, measures the two-color ratio, and accurately obtains the temperature of the object on the basis of these two two-color ratios.
    Type: Application
    Filed: February 8, 2017
    Publication date: February 14, 2019
    Applicant: Inter-University Research Institute Corporation High Energy Accelerator Research Organization
    Inventors: Tajima Osamu, Taketo Nagasaki
  • Publication number: 20180138232
    Abstract: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.
    Type: Application
    Filed: January 12, 2018
    Publication date: May 17, 2018
    Applicants: LAPIS Semiconductor Co., Ltd., Inter-University Research Institute Corporation High Energy Accelerator Research Organization
    Inventors: Yasuo ARAI, Masao OKIHARA, Hiroki KASAI
  • Patent number: 9899448
    Abstract: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.
    Type: Grant
    Filed: March 9, 2016
    Date of Patent: February 20, 2018
    Assignees: LAPIS Semiconductor Co., Ltd., INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION
    Inventors: Yasuo Arai, Masao Okihara, Hiroki Kasai
  • Patent number: 9835569
    Abstract: A magnetic measurement system includes an X-ray source, a monochromator that converts right- and left-polarization X-ray into right- and left-monochromatic X-ray, an aperture slit that allows the right- and left-monochromatic X-ray to pass through, an analytical section, and piezoelectric scanning devices. The analytical section has a Fresnel zone plate that receives and focuses the right- and left-monochromatic X-ray on a single point being 10 nm or less wide of a magnetic sample, an order-sorting aperture that allows the focused X-ray to selectively pass through, a sample-stage that sets a comparatively thick magnetic sample that is more than 150 nm thick and less than or equal to 1000 nm thick to be irradiated with the X-ray, and an X-ray-detector that detects transmittance of transmission X-ray passing through the comparatively thick sample and that generates X-ray magnetic circular dichroism (XMCD) data by directly measuring the detected transmittance of the transmission X-ray.
    Type: Grant
    Filed: March 28, 2017
    Date of Patent: December 5, 2017
    Assignees: TOYOTA JIDOSHA KABUSHIKI KAISHA, INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION
    Inventors: Masao Yano, Kanta Ono
  • Patent number: 9769913
    Abstract: The present invention provides a burst-laser generator using an optical resonator which produces high pulse-strength of burst-laser in order to conduct laser Compton scattering, comprising: a self-oscillation amplifying optical loop-path and an external optical resonator to burst-amplify laser, wherein, laser supplied by an exciting laser source is self-oscillation amplified with the self-oscillation amplifying optical loop-path and further burst-amplified with the external optical resonator.
    Type: Grant
    Filed: February 1, 2013
    Date of Patent: September 19, 2017
    Assignee: INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION
    Inventors: Junji Urakawa, Hirotaka Shimizu
  • Patent number: 9766190
    Abstract: A method, system and apparatus are provided to measure magnetic characteristics of a comparatively thick magnetic sample in a magnetic field or nonmagnetic field by X-ray magnetic circular dichroism (XMCD). In particular, the method, system and apparatus measure the magnetic characteristics of the thick magnetic sample by irradiating the sample with X-ray, and detecting transmissive X-ray passing through the sample.
    Type: Grant
    Filed: September 25, 2014
    Date of Patent: September 19, 2017
    Assignees: TOYOTA JIDOSHA KABUSHIKI KAISHA, INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION
    Inventors: Masao Yano, Kanta Ono
  • Patent number: 9714907
    Abstract: It is an object of the present invention to provide a method and an apparatus for measuring a scattering intensity distribution capable of measuring a scattering intensity distribution in a reciprocal space in a short time.
    Type: Grant
    Filed: December 10, 2013
    Date of Patent: July 25, 2017
    Assignee: Inter-University Research Institute Corporation High Energy Accelerator Research Organization
    Inventors: Tadashi Matsushita, Wolfgang Voegeli, Tetsuro Shirasawa, Toshio Takahashi, Etsuo Arakawa
  • Publication number: 20170199135
    Abstract: A system and an apparatus are provided to measure magnetic characteristic of crystal grains composing magnetic polycrystalline materials in the magnetic field or nonmagnetic field by X-ray magnetic circular dichroism (XMCD). In particular, the system and the apparatus measure the magnetic characteristic of comparatively very thick materials.
    Type: Application
    Filed: March 28, 2017
    Publication date: July 13, 2017
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION
    Inventors: Masao Yano, Kanta Ono
  • Patent number: 9680081
    Abstract: Problem There is proposed an innovative cross-sectional structure, with an idea contrary to the conventional one, utilizing the non-reactivity between Cu and Ta (or between Ag and Nb, Ta) in a high-temperature short-time heat treatment, thus achieving (1) the suppression of the low magnetic-field instability, (2) excellent wire drawability of a precursor wire, and (3) the reduction of the cost required for the incorporation of a stabilizer. Means for Resolution There is proposed a structure having an assembly of a plurality of single wires, wherein the assembly is covered with an outer cover (skin) formed from Nb or Ta, wherein each of the single wires has an Nb/Al composite filament region which is formed from a composite of Nb and Al mixed in an Nb:Al molar ratio of 3:1, and which is covered with a partition formed from Nb or Ta, and further covered with an interfilamentary barrier formed from Cu or Ag disposed around the partition.
    Type: Grant
    Filed: November 15, 2012
    Date of Patent: June 13, 2017
    Assignees: NATIONAL INSTITUTE FOR MATERIAL SCIENCE, INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION
    Inventors: Takao Takeuchi, Kiyosumi Tsuchiya, Kazuhiko Nakagawa
  • Publication number: 20170113259
    Abstract: Targeting mass production, the present invention provides an advanced method of manufacturing pure niobium plate end-group components from pure niobium plate material for superconducting high frequency accelerator cavity by means of innovative shear-blanking followed by innovative forging procedures, wherein the invention is to convert the procedure/production method from the conventional machining or waterjet cutting followed by the conventional cold forging to the whole press-forming The invention gives the drastic effects on cost-effectiveness and press-performance.
    Type: Application
    Filed: December 15, 2016
    Publication date: April 27, 2017
    Applicants: SHINOHARA PRESS SERVICE CO., LTD., INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION
    Inventors: Kiyohiko Nohara, Nobuyuki Kawabata, Hideyoshi Nakamura, Kyohei Miyajima, Masayuki Shinohara, Hitoshi Hayano, Akira Yamamoto, Takayuki Saeki, Shigeki Kato, Masashi Yamanaka
  • Patent number: 9564732
    Abstract: It has been very difficult to accumulate strong laser in the conventional optical resonator, because firstly it has been very difficult to control a resonator length less than 1 ? in resonation position which is required for the laser amplification more than 1,000 times and secondly, the conventional method has utilized laser strength of amplified laser in the optical resonator as the resonance control signal. The present invention provides an optical resonator system to accumulate strong laser. In the system, unamplified modulation wave or harmonic which are derived from oscillation laser are selectively used to tune a resonator length of the optical resonator.
    Type: Grant
    Filed: September 12, 2013
    Date of Patent: February 7, 2017
    Assignee: INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION
    Inventors: Junji Urakawa, Kazuyuki Sakaue
  • Publication number: 20160190766
    Abstract: It has been very difficult to accumulate strong laser in the conventional optical resonator, because firstly it has been very difficult to control a resonator length less than 1 ? in resonation position which is required for the laser amplification more than 1,000 times and secondly, the conventional method has utilized laser strength of amplified laser in the optical resonator as the resonance control signal. The present invention provides an optical resonator system to accumulate strong laser. In the system, unamplified modulation wave or harmonic which are derived from oscillation laser are selectively used to tune a resonator length of the optical resonator.
    Type: Application
    Filed: September 12, 2013
    Publication date: June 30, 2016
    Applicant: Inter-University Research Institute Corporation High Energy Accelerator Research Organization
    Inventors: Junji URAKAWA, Kazuyuki SAKAUE
  • Patent number: 9316418
    Abstract: An apparatus for achieving a cryogenic temperature in a movable system, includes a rotating table, a vacuum chamber which is fixed on the rotating table, a cryogen-free refrigerator which has a cooling section inside the vacuum chamber, an inner cylinder which is fixed to a bottom of the rotating table, an outer cylinder which stores the inner cylinder such that the inner cylinder is rotatable and includes an outward and return gas port which is provided to be continuous with gas passages, a compressor which circulates gas to the cryogen-free refrigerator through the outward and return gas passages, and a rotary joint for wiring which is fixed to the inner cylinder and rotatably conducts electricity, wherein a piece of internal wiring is led through a through-hole and a hole, and electricity is supplied to a piece of equipment on the rotating table through the piece of internal wiring.
    Type: Grant
    Filed: February 12, 2014
    Date of Patent: April 19, 2016
    Assignee: INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION
    Inventor: Osamu Tajima
  • Publication number: 20160069825
    Abstract: It is an object of the present invention to provide a method and an apparatus for measuring a scattering intensity distribution capable of measuring a scattering intensity distribution in a reciprocal space in a short time.
    Type: Application
    Filed: December 10, 2013
    Publication date: March 10, 2016
    Applicant: Inter-University Research Institute Corporation High Energy Accelerator Research Organization
    Inventors: Tadashi Matsushita, Wolfgang Voegeli, Tetsuro Shirasawa, Toshio Takahashi, Etsuo Arakawa
  • Publication number: 20150380119
    Abstract: A method for synthesizing a radioactive technetium-99m-containing substance and a synthesizing device are provided. The method for synthesizing a radioactive technetium-99m-containing substance has a step for generating negative muons and a step for irradiating the negative muons onto a ruthenium sample. The ruthenium material preferably includes a metallic ruthenium and/or a ruthenium compound. Also, the ruthenium sample preferably has a plurality of superimposed ruthenium thin plates having a thickness of 4 mm or less.
    Type: Application
    Filed: June 26, 2015
    Publication date: December 31, 2015
    Applicant: Inter-University Research Institute Corporation High Energy Accelerator Research Organization
    Inventor: Kanetada NAGAMINE
  • Patent number: 9103005
    Abstract: A magnetic shielding material which can decrease the thickness by having excellent conductivity even at low temperatures of, for example, 77 K or lower, in a strong magnetic field of a magnetic flux density of 1 T or more is provide. A magnetic shielding material to be used at low temperatures of 77 K or lower in the magnetic field of a magnetic flux density of 1 T or more, comprises aluminum having a purity of 99.999% by mass or more.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: August 11, 2015
    Assignees: INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION, SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Takayuki Tomaru, Kenichi Sasaki, Hiroaki Hoshikawa, Hiroshi Tabuchi
  • Patent number: 9018595
    Abstract: [Problem to be Solved] The present invention presents a 2-D-TOF-pulse neutron detector which is able to measure accurate energy spectra, doses, 2-D incident positions and transmission image by measuring TOF of pulse neutron for BNCT and to display the result of the measurement on the transmission image. [Solution to Problem] The 2-D-TOF-pulse neutron detector includes a GEM-detector being put in a chamber filled with electrolytic-dissociative gas, 2-D-TOF readout integrated circuit and image processor.
    Type: Grant
    Filed: May 6, 2013
    Date of Patent: April 28, 2015
    Assignee: Inter-University Research Institute Corporation High Energy Accelerator Research Organization
    Inventor: Syouji Uno
  • Patent number: 8963246
    Abstract: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.
    Type: Grant
    Filed: March 9, 2011
    Date of Patent: February 24, 2015
    Assignees: Inter-University Research Institute Corporation High Energy Accelerator Research Organization, LAPIS Semiconductor Co., Ltd.
    Inventors: Yasuo Arai, Masao Okihara, Hiroki Kasai