Abstract: It is an object of the present invention to provide a method and an apparatus for measuring a scattering intensity distribution capable of measuring a scattering intensity distribution in a reciprocal space in a short time.

Abstract: A method for synthesizing a radioactive technetium-99m-containing substance and a synthesizing device are provided. The method for synthesizing a radioactive technetium-99m-containing substance has a step for generating negative muons and a step for irradiating the negative muons onto a ruthenium sample. The ruthenium material preferably includes a metallic ruthenium and/or a ruthenium compound. Also, the ruthenium sample preferably has a plurality of superimposed ruthenium thin plates having a thickness of 4 mm or less.

Abstract: A magnetic shielding material which can decrease the thickness by having excellent conductivity even at low temperatures of, for example, 77 K or lower, in a strong magnetic field of a magnetic flux density of 1 T or more is provide. A magnetic shielding material to be used at low temperatures of 77 K or lower in the magnetic field of a magnetic flux density of 1 T or more, comprises aluminum having a purity of 99.999% by mass or more.

Abstract: [Problem to be Solved] The present invention presents a 2-D-TOF-pulse neutron detector which is able to measure accurate energy spectra, doses, 2-D incident positions and transmission image by measuring TOF of pulse neutron for BNCT and to display the result of the measurement on the transmission image. [Solution to Problem] The 2-D-TOF-pulse neutron detector includes a GEM-detector being put in a chamber filled with electrolytic-dissociative gas, 2-D-TOF readout integrated circuit and image processor.

Abstract: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.

Abstract: A method of production of a radio frequency accelerator which has a tubular part 1 which forms an acceleration cavity, including a temporary assembly step of making a plurality of component members 11 to 14 which have shapes obtained by splitting the tubular part 1 mate with each other to temporarily assemble them into the shape of the tubular part 10 and a welding step of welding the plurality of component members 11 to 14 together. The temporary assembly step includes a step of placing, inside of the tubular part 1, support members 21 for contacting the inside surface of the tubular part 1 and supporting the tubular part 1 from the inside, and the welding step includes a step of welding the plurality of component members 11 to 14 along the butt lines 51 by friction stir welding.

Abstract: An apparatus for achieving a cryogenic temperature in a movable system, includes a rotating table, a vacuum chamber which is fixed on the rotating table, a cryogen-free refrigerator which has a cooling section inside the vacuum chamber, an inner cylinder which is fixed to a bottom of the rotating table, an outer cylinder which stores the inner cylinder such that the inner cylinder is rotatable and includes an outward and return gas port which is provided to be continuous with gas passages, a compressor which circulates gas to the cryogen-free refrigerator through the outward and return gas passages, and a rotary joint for wiring which is fixed to the inner cylinder and rotatably conducts electricity, wherein a piece of internal wiring is led through a through-hole and a hole, and electricity is supplied to a piece of equipment on the rotating table through the piece of internal wiring.

Abstract: Provided is a laser oscillation apparatus capable of stabilizing resonance even when finesse of an optical resonator is increased and generating stronger laser light than that of a traditional apparatus by accumulating laser light in the optical resonator.

Abstract: The invention provides a nondestructive inspection apparatus and nondestructive inspection method for inspecting the inside of a surface layer of a composite structure using cosmic-ray muons.

Abstract: The present invention provides a target capable of reducing radioactivation of a member due to protons. The present invention uses a novel target configured by compositing a beryllium material or a lithium material and a carbon-series material for reducing the radioactivation of the member due to the protons.

Abstract: A medium area (S) filled with liquid xenon (2) is formed between an external cylindrical body (1a) and internal cylindrical body (1b), and a pair of anode pads (11, 12) are disposed in two-dimensional form in opposite end portions of the medium area (S) in the intersection direction with respect to the gamma-ray incident direction. An intermediate electrode (10) is disposed between a pair of anode pads (11, 12), and a plurality of photomultiplier tubes (5) is installed in two-dimensional form in the external cylindrical body (1a). Then, the gamma-ray reaction point within the liquid area (S) is identified from signals output from the anode pads (11, 12) and photomultiplier tubes (5).

Abstract: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.

Abstract: To provide a manufacturing method of a superconducting radio-frequency acceleration cavity used in a charged particle accelerator enabling the manufacturing with few waste amounts of the niobium material at low cost in a short time, the manufacturing method has each of the steps of (a) obtaining an ingot made from a disk-shaped niobium material, (b) slicing and cutting the niobium ingot into a plurality of niobium plates each with a predetermined thickness, by vibrating multiple wires back and forth while spraying fine floating abrasive grains with the niobium ingot supported, (c) removing the floating abrasive grains adhered to the sliced niobium plates, and (d) performing deep draw forming on the niobium plates and thereby obtaining a niobium cell of a desired shape.

Abstract: A wiring material which is easy to handle and also exhibits excellent conductivity even in a strong magnetic field of, for example, a magnetic flux density of 1 T or more is provided. A wiring material to be used in the magnetic field of a magnetic flux density of 1 T or more comprises aluminum having a purity of 99.999% by mass or more.

Abstract: A thermal conductor material having excellent heat transfer properties by obtaining high thermal conductivity even at low temperature of, for example, a liquid nitrogen temperature (77 K) or lower is to provide. A thermal conductor to be used at low temperature of 77 K or lower in the magnetic field of a magnetic flux density of 1 T or more, includes aluminum which has a purity of 99.999% by mass or more and also has the content of iron of 1 ppm by mass or less.

Abstract: A method of production of a radio frequency accelerator which has a tubular part 1 which forms an acceleration cavity, including a temporary assembly step of making a plurality of component members 11 to 14 which have shapes obtained by splitting the tubular part 1 mate with each other to temporarily assemble them into the shape of the tubular part 10 and a welding step of welding the plurality of component members 11 to 14 together. The temporary assembly step includes a step of placing, inside of the tubular part 1, support members 21 for contacting the inside surface of the tubular part 1 and supporting the tubular part 1 from the inside, and the welding step includes a step of welding the plurality of component members 11 to 14 along the butt lines 51 by friction stir welding.

Abstract: An object of the invention is to provide the orbit control device for modulating the orbital deviations of the charged particle beam and its control method, wherein in the synchrotron making use of induction cells, the charged particle beam orbit control device is comprised of the digital signal processor for controlling the generation timing of an induced voltage in response to the beam position signal from the beam position monitor for sensing the deviations of the charged particle beam on the design orbit of the synchrotron from the design orbit and to the passage signal from the bunch monitor for sensing the passage of the bunch and the pattern generator for generating a gate signal pattern for on/off-selecting the switching electric power supply a according to the master gate signal generated by the digital signal processor.

Abstract: An accelerator that can accelerate by itself all ions up to any energy level allowed by the magnetic fields for beam guiding, and provides an all-ion accelerator in which with trigger timing and a charging time of an induced voltage applied to an ion beam injected from a preinjector by induction cells for confinement and acceleration used in an induction synchrotron, digital signal processors for confinement and acceleration and pattern generators for confinement and acceleration generate gate signal patterns for confinement and acceleration on the basis of a passage signal of the ion beam and an induced voltage signal for indicating the value of the induced voltage applied to the ion beam, and intelligent control devices for confinement and acceleration perform feedback control of on/off of the induction cells for confinement and acceleration.

Abstract: The present invention provides a set of induction accelerating cell for controlling acceleration of a charged particle beam and an induction accelerating device for controlling generation timing of an induced voltage applied by the induction accelerating cell in a synchrotron. The induction accelerating device in a synchrotron includes: an induction accelerating cell that applies an induced voltage; a switching power supply that supplies a pulse voltage to the induction accelerating cell via a transmission line and drives said induction accelerating cell; a DC power supply that supplies electric power to the switching power supply; and an intelligent control device including a pattern generator that generates a gate signal pattern for controlling on/off the switching power supply, and a digital signal processing device that controls on/off a gate master signal that becomes the basis of the gate signal pattern.

Abstract: The invention provides a nondestructive inspection apparatus and nondestructive inspection method for inspecting the inside of a surface layer of a composite structure using cosmic-ray muons.