Abstract: To provide a gas sensor with fast response and high sensitivity to oxygen gas. Disclosed is a gas sensor 100 including: a substrate 10; a first pad electrode 12A and a second pad electrode 12B; a nanowire 14 made of a specific metal; and an oxide layer 16 made of a high-resistance semiconductor that is an oxide of a metal different from a metal constituting the nanowire 14. The first pad electrode 12A and the second pad electrode 12B are formed on or above the substrate 10. The nanowire 14 connects the first pad electrode 12A and the second pad electrode 12B and is formed on or above the substrate 10. The oxide layer 16 is formed in contact with the nanowire 14. This contact between the nanowire 14 and the oxide layer 16 provides fast response and high sensitivity to oxygen gas.

Abstract: This composite comprises: a material having electrical conductivity; and a transition metal oxide which is supported by said material. The transition metal oxide has an amorphous structure.

Abstract: The present invention provides cells which have a high ability to propagate influenza virus, are suitable for use in production of an influenza virus for preparing a vaccine, and are able to be cultured in vitro, and a method for producing an influenza virus using the cells. That is, the present invention provides cells for producing an influenza virus in which expression of one or more genes that encode proteins involved in an effect of suppressing influenza virus production in a cell is suppressed and the gene is at least one selected from the group including ACTG1 gene and the like, and a method for producing an influenza virus that includes infecting the cells for producing an influenza virus with an influenza virus and then culturing.

Abstract: A thermoelectric conversion device includes thermoelectric layers and connection layers that are alternately provided in a first direction parallel to surfaces of the thermoelectric layers, and are connected to each other, thermally conductive layers that are connected to the respective connection layers, and extends in a second direction intersecting the surfaces, a first insulating layer that has a smaller thermal conductivity than the thermally conductive layers, and a second insulating layer that has a smaller thermal conductivity than the first insulating layer, is provided between the first insulating layer and the thermoelectric layers, and has a thickness equal to or greater than ¼ of a distance between an end of the thermally conductive layer at a side of one of the thermoelectric layers and a center of another of the connection layers in the first direction, the thermally conductive layers penetrating through the first and second insulating layers.

Abstract: A force sense presentation device that presents a force sense force by forming a dynamic quantity distribution on a skin of a person includes a plurality of stimulation elements and a controller. Each of the plurality of stimulation elements stimulates the skin of the person. The controller controls the plurality of stimulation elements such that a dynamic quantity distribution for generating a target force sense is formed on the skin. An interval between the adjacent stimulation elements is an interval enabling presentation of a spatially continuous force sense. The force sense generates a self-kinesthetic sense of the person.

Abstract: An electrolytic cell capable of simply electrolyzing carbon dioxide into carbon monoxide and oxygen with low activation energy, and an electrolytic device. The carbon dioxide electrolytic cell includes a cathode, an anode, and a solid electrolyte having oxide ion conductivity. The cathode is the following (A) or (B); (A) a metal and a first mayenite-type compound are included therein or (B) a metal and a second mayenite-type compound are included therein, said second mayenite type compound including a mayenite type compound having electron conductivity.

Abstract: Provided is an OLED device 10 including a plurality of organic semiconductor layers sandwiched between a pair of electrodes 3 and 4. The organic semiconductor layers include a first organic semiconductor layer 1 containing a first organic semiconductor material, and a second organic semiconductor layer 2 containing a second organic semiconductor material and a third organic semiconductor material, the first organic semiconductor layer and the second organic semiconductor layer form a joining surface, and the first organic semiconductor material and the second organic semiconductor material satisfy requirement and the like relating to a predetermined energy level.

Abstract: A nitride compound semiconductor having a low resistivity that is conventionally difficult to be manufactured is provided. Since the nitride compound semiconductor exhibits a high electron mobility, a high-performance semiconductor device may be configured. The present invention may provide, at a high productivity, a group 13 nitride semiconductor of an n-type conductivity that may be formed as a film on a substrate having a large area size and has a mobility of 70 to 140 cm2/(V·s) by a pulsed sputtering method performed in a process atmosphere at room temperature to 700° C.

Abstract: Disclosed herein is a method for selectively reducing, using electrical energy, CO2 to formic acid, a catalyst for use in the method, and an electrochemical reduction system.

Abstract: The present invention provides a micro two-phase droplet generating device that does not require separate through-holes corresponding to a plurality of two-phase dispersed parallel continuous flow channels. The micro two-phase droplet generating device of the present application comprises a row of a plurality of microflow channels, liquid transfer ports, and a slit, and is configured so as to form two-dispersion phase parallel continuous flows at first connection sites between the plurality of microflow channels, in which a first dispersion phase flows, and the slit, through which a second dispersion phase flows.

Abstract: The invention provides a method for producing sheet-like particles of zeolite that cannot be obtained by a top-down method, and provides sheet-like particles of zeolite having an 8-membered oxygen ring structure obtained by the method. A thickness of the sheet-like particles is 1 nm to 100 nm, and an aspect ratio (maximum width/thickness in particles) of the sheet-like particles is 100 or more.

Abstract: A switching circuit includes a first switching element that has a first control terminal, a connection state between a power generation element and an electric storage device being controlled in accordance with a voltage applied to the first control terminal, and a control circuit configured to output a first voltage to the first control terminal until a voltage difference between both ends of the electric storage device becomes a first predetermined value larger than an initial state when the voltage difference increases from the initial state with time, and output a second voltage to the first control terminal until the voltage difference becomes lower than a second predetermined value smaller than the first predetermined value when the voltage difference exceeds the first predetermined value, the first voltage being a voltage that keeps the first switching element on, the second voltage being a voltage that keeps the first switching element off.

Abstract: A composite having a composition expressed by AnXyMm wherein, A represents a lanthanoid that is in a trivalent state at least partially or entirely, X represents an element that is a Group-2 element in the periodic table selected from the group consisting of Ca, Sr, and Ba, or a lanthanoid that is different from A, M represents an element that is a Group-1 element in the periodic table, a Group-2 element selected from the group consisting of Ca, Sr, and Ba, or a lanthanoid that is different from A and X, n satisfies 0<n<1, y satisfies 0<y<1, m satisfies 0?m<1, and n+y+m=1.

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.

Abstract: A switching circuit includes a switching element of a field-effect type, the switching element being configured to switch between an ON state and an OFF state in accordance with a potential of a control terminal, and a control circuit configured to supply a potential of a first level to the control terminal when maintaining one state of the ON state and the OFF state of the switching element, and make the control terminal floating after charging or discharging the control terminal via a resistor and supply a potential of a second level to the control terminal when switching the switching element from the one state to another state of the ON state and the OFF state, the first level bringing the switching element into the one state, the second level bringing the switching element into said another state.

Abstract: Provided is a method for detecting a biomarker indicating states of a target biological system based on data acquired by measuring the target biological system. The method includes the steps of: preparing a reference dataset based on data acquired from one or more reference biological systems; generating a target dataset by adding, to the reference dataset, target biological data acquired from the target biological system; acquiring first correlation coefficients between a plurality of factor items in the reference dataset; acquiring second correlation coefficients between the plurality of factor items in the target dataset; acquiring difference correlation coefficients that are differences between the first correlation coefficients and the second correlation coefficients; acquiring indexes respectively for the plurality of factor items based on the difference correlation coefficients; and selecting the biomarker based on the indexes.

Abstract: A spike generation circuit includes a first CMOS inverter connected between a first power supply and a second power supply, an output node of the first CMOS inverter being coupled to a first node that is an intermediate node coupled to an input terminal to which an input signal is input, a switch connected in series with the first CMOS inverter, between the first power supply and the second power supply, a first inverting circuit that outputs an inversion signal of a signal of the first node to a control terminal of the switch, and a delay circuit that delays the signal of the first node, outputs a delayed signal to an input node of the first CMOS inverter, and outputs an isolated output spike signal to an output terminal.

Abstract: Provided are a supported metal material showing high catalytic activity, a supported metal catalyst, a method of producing ammonia and a method of producing hydrogen using the supported metal catalyst, and a method of producing a cyanamide compound. The supported metal material of the present invention is a supported metal material in which a transition metal is supported on a support, and the support is a cyanamide compound represented by the following general formula (1): MCN2 (1), wherein M represents a group II element of the periodic table, and the specific surface area of the cyanamide compound is 1 m2 g?1 or more.

Abstract: The present invention is to provide an electron or hydride ion intake/release material comprising a lanthanoid oxyhydride represented by the formula Ln(HO) (in the formula, Ln represents a lanthanoid element) or an electron or hydride ion intake/release composition comprising at least one kind of lanthanoid oxyhydride; a transition metal-supported material wherein a transition metal is supported by the above electron or hydride ion intake/release material or electron or hydride ion intake/release composition; and a catalyst comprising the transition metal-supported material. The electron or hydride ion intake/release material or electron or hydride ion intake/release composition according to the present invention has a higher ability for intake/release of electron or hydride ion than that of a conventional hydride-containing compound, and can be used effectively as a catalyst such as a catalyst having excellent ammonia synthesis activity by supporting a transition metal thereon.

Abstract: The present invention provides for polycrystalline superconducting permanent magnets which are synthesized of doped superconducting (AE) Fe2As2 compounds, where AE denotes an alkaline earth metal, such as Ba, Sr, Mg or Ca. The superconducting permanent magnets of the present invention can be magnetized in their superconducting state by induced currents, resulting in trapped magnetization that scales with the size of the bulk material. The magnitude of the trapped field has been demonstrated to be over 1 T and is predicted to be over 10 T if the technology is scaled, which is much higher than the capabilities of permanent magnets and other superconducting polycrystalline bulks currently known in the art.