Patents Assigned to Jiro Hiraishi
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Patent number: 6284211Abstract: Nitrogen oxides are removed from an exhaust gas containing nitrogen oxides and oxygen in a proportion larger than its stoichiometric proportion relative to unburned components in the exhaust gas, by (i) disposing an exhaust gas cleaner in a flow path, the exhaust gas cleaner comprising a first catalyst composed of 0.2-20 parts by weight (on a metal basis) of silver or silver oxide supported on a porous inorganic oxide, and a second catalyst composed of 1-50 parts by weight (on an oxide basis) of tungsten and/or vanadium supported on a porous inorganic oxide; (ii) introducing oxygen-containing organic compounds having 2 or more carbon atoms or a fuel containing the oxygen-containing organic compounds into the exhaust gas on the upstream side of the exhaust gas cleaner; and (iii) bringing the exhaust gas into contact with the exhaust gas cleaner at a temperature of 150-650° C., thereby causing a reaction of the nitrogen oxides with the oxygen-containing organic compounds to remove the nitrogen oxides.Type: GrantFiled: August 24, 1994Date of Patent: September 4, 2001Assignees: Jiro Hiraishi of Director-General of Agency of Industrial Science & Technology, KOCAT Inc.Inventors: Tatsuo Miyadera, Kiyohide Yoshida
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Patent number: 6011171Abstract: The present invention provides a process for synthesizing tertiary carboxylic acids or the esters thereof having one or two more carbon atoms than the raw material has, comprising reacting in a strong acid (e.g., sulfuric acid, sulfuric acid-phosphoric acid, hydrogen fluoride, fluorosulfuric acid, boron trifluoride.water complex and trifluoromethanesulfonic acid) a raw material compound (i.e., olefin, alcohol, diene, diol or saturated hydrocarbon) with carbon monoxide in the presence of a specific metal carbonyl catalyst (i.e., platinum carbonyl catalyst, palladium carbonyl catalyst and gold dicarbonyl catalyst).The metal carbonyl catalyst is formed by reacting in a strong acid at least one specific metal compounds (e.g., platinum compound such as platinum (II, IV) oxide, platinum (II, IV) hydroxide, a platinum powder, etc.; palladium compound such as palladium (II, III, IV) oxide, palladium (II) hydroxide, palladium (II) sulfate, palladium (II) carboxylate, a palladium powder, etc.Type: GrantFiled: November 4, 1997Date of Patent: January 4, 2000Assignee: Jiro Hiraishi, Director-General, Agency of Industrial Science and TechnologyInventors: Qiang Xu, Yoshie Souma
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Patent number: 5887083Abstract: A method of processing image information is disclosed, for recognizing the position and attitude of an object with a high speed treatment and improved recognition accuracy. The method comprised of the steps of entry of a stereoscopic image of an object, extraction of edges of the object, and dividing it into segments based on the local feature of the image, adding the apex information to the segments to produce the recognition data, verifying the recognition data with reference to an object model based on local geometric features to detect a corresponding candidate; finely adjusting each of corresponding candidates based on an entire geometric features; and detecting the position and attitude of the object on the basis of recognition including the initial verification and the fine adjustment.Type: GrantFiled: July 18, 1996Date of Patent: March 23, 1999Assignee: Jiro Hiraishi, President of Kogyogijutsuin Stanley Electric Co., Ltd.Inventors: Yasushi Sumi, Fumiaki Tomita, Yutaka Ishiyama
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Patent number: 5866438Abstract: In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55.degree. with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.Type: GrantFiled: April 14, 1998Date of Patent: February 2, 1999Assignees: Fuji Electric Co., Ltd., Director-General, Jiro Hiraishi, Agency of Industrial Science and TechnologyInventors: Junji Itoh, Takahiko Uematsu, Yoichi Ryokai, Masato Nishizawa, Kazuo Matsuzaki
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Patent number: 5845006Abstract: A method of processing image information is disclosed, for detecting the movement of an object with a simplifed system structure, and high speed treatment. The method is comprised of the steps of entry of a stereoscopic image of an object, extraction of edges of the object, and dividing it into segments based on the local feature of the image. On each segment, tracing points (sampling points) are selected, the inter-frame correlation of selected points is obtained, the three-dimensional coordinates of the points are measured, and thus the position and attitude of the object are detected, wherein the inter-frame correlation is performed by evaluating the similarity between frames based on correlation between the tangential direction of tracing points and the luminance value of the surface.Type: GrantFiled: July 18, 1996Date of Patent: December 1, 1998Assignee: Jiro HiraishiInventors: Yasushi Sumi, Fumiaki Tomita, Yutaka Ishiyama
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Patent number: 5793153Abstract: In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55.degree. with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.Type: GrantFiled: August 8, 1995Date of Patent: August 11, 1998Assignees: Fuji Electric Co., Ltd., Director-General, Jiro Hiraishi, Agency of Industrial Science and TechnologyInventors: Junji Itoh, Takahiko Uematsu, Yoichi Ryokai, Masato Nishizawa, Kazuo Matsuzaki
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Patent number: 5780002Abstract: An exhaust gas cleaner is constituted of an Ag catalyst carrying an Ag component and a base metal catalyst carrying a Cu component and optionally W, V, Mo components, and a noble metal catalyst carrying a noble metal component. The base metal catalyst and the noble metal catalyst may be physically mixed to form a mixed catalyst. Another exhaust gas cleaner is constituted of the first Ag catalyst carrying an Ag component, the second Ag catalyst carrying an Ag component, a base metal catalyst carrying a Cu component and optionally W, V, Mo components, and a noble metal catalyst carrying a noble metal component. The second Ag catalyst carries the Ag component in an amount larger than that of the first Ag catalyst. The noble metal catalyst is physically mixed with the base metal catalyst to form a mixed catalyst. The exhaust gas cleaner can effectively remove nitrogen oxides in a wide temperature range of exhaust gas.Type: GrantFiled: July 9, 1997Date of Patent: July 14, 1998Assignees: Jiro Hiraishi, Director-General of Agency of Industrial Science and Technology, Kabushiki Kaisha RikenInventors: Tatsuo Miyadera, Kiyohide Yoshida, Mika Saito, Naoko Irite, Akira Abe, Masataka Furuyama
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Patent number: 5656250Abstract: A three-dimensional network structure comprising three-dimensionally interconnected spherical silica particles, having specific physical characteristics including diameter, pores on the surfaces of the particles, cross-sectional areas of the bonds interconnecting the spherical silica particles, elasticity modulus, voids content, and silica content, the surfaces of the spherical silica particles being wholly or partly covered with a water-soluble polymer, the network structure being able to remain substantially intact when heat-treated and being able to undergo machining. There is also provided a method of making a three-dimensional network structure comprising spherical silica particles, comprising hydrolyzing and polymerizing a low polymer of an alkoxysilane in a mixed solution containing the alkoxysilane low polymer and a water-soluble polymer in a mixed solvent composed of water and an alcohol in the presence of an acid catalyst.Type: GrantFiled: June 27, 1995Date of Patent: August 12, 1997Assignee: Jiro Hiraishi, Director-General, Agency of Industrial Science and TechnologyInventors: Yuko Tanaka, Muneaki Yamaguchi, Hiromasa Ogawa, Katsutoshi Tanaka
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Patent number: 5630554Abstract: To insure that rejects or scraps of composite materials such as printed wiring boards that consist of the mixture of metal and non-metal parts are separated into the metal and non-metal components with good precision so that both components can be recovered as recyclable valuables, the composite materials are broken into pieces by means of a shearing machine or the like and the pieces are thereafter ground with a hammer mill or the like to form a mixed powder consisting of metal and non-metal particles, which mixed powder is then fed continuously on to a belt conveyor inclined at an angle with respect to a line perpendicular to the direction of travel, whereby the metal particles are efficiently separated from the non-metal particles; the recovered metal particles being fed to an electrostatic separator to obtain higher grade of concentration by removing the non-metal inclusions.Type: GrantFiled: February 21, 1995Date of Patent: May 20, 1997Assignees: Dowa Mining Co., Ltd., Jiro HiraishiInventors: Chiaki Izumikawa, Hiroyuki Iwata, Shigehisa Endoh, Hitoshi Ohya