Abstract: An activated carbon regeneration method of the present invention is for eluting gold from activated carbon on which the gold has been adsorbed and thereafter recycling, in adsorption of the gold, the used activated carbon from which the gold has been eluted, the method including: washing the used activated carbon with an acidic washing liquid, alkaline washing liquid or neutral washing liquid; and when the used activated carbon is washed with the acidic washing liquid, keeping the acidic washing liquid after the washing in an acidic region, or when the used activated carbon is washed with the alkaline washing liquid or neutral washing liquid, keeping the alkaline washing liquid or neutral washing liquid after the washing in an alkaline region or neutral region.
Abstract: Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of tungsten as an essential component, and having a purity of 99.998% or more excluding tungsten and gas components. Additionally provided is a tantalum sputtering target according to according to the above further containing 0 to 100 mass ppm of molybdenum and/or niobium, excluding 0 mass ppm thereof, wherein the total content of tungsten, molybdenum, and niobium is 1 mass ppm or more and 150 mass ppm or less, and wherein the purity is 99.998% or more excluding tungsten, molybdenum, niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which enables stable plasma and yields superior film evenness (uniformity).
Abstract: The present invention is intended for effectively removing copper, iron, sulfur, which are impurities, from activated carbon on which gold is adsorbed before gold eluting in the point of view of gold recovery, and is related to a method for eluting gold from an activated carbon on which at least sulfur (S) and gold (Au) are adsorbed, whereas the activated carbon is washed with an alkali solution before eluting the gold, and then the gold is eluted from the activated carbon.
Abstract: A rolled copper foil for producing a two-dimensional hexagonal lattice compound, including P: 0.01 to 0.21 wt %, Fe: 0.006 wt % or less, and the balance being Cu and inevitable impurities, and having the following relationship: 2.0<=(I/I0) where I is a (111) diffraction intensity determined by an X ray diffraction of a rolled surface after heating at 1000° C. for 30 minutes and I0 is a (111) diffraction intensity determined by an X ray diffraction of fine powder copper.
Abstract: A cylindrical sputtering target includes a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween. The plurality of cylindrical sintered compacts have a relative density of 99.7% or higher and 99.9% or lower. The plurality of cylindrical sintered compacts adjacent to each other have a difference therebetween in the relative density of 0.1% or smaller.
Abstract: Provided is a copper foil provided with a carrier in which the laser hole-opening properties of the ultrathin copper layer are good and which is suitable for producing a high-density integrated circuit substrate. A copper foil provided with a carrier having, in order, a carrier, an intermediate layer, and an ultrathin copper layer, wherein the specular gloss at 60° in an MD direction of the intermediate layer side surface of the ultrathin copper layer is 140 or less.
Abstract: The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.
Abstract: Provided is a tungsten sintered compact sputtering target containing iron as an impurity in an amount of 0.8 wtppm or less, and remainder being tungsten and other unavoidable impurities, wherein a range of iron concentration in a target structure is within a range of ±0.1 wtppm of an average concentration. Additionally provided is a tungsten sintered compact sputtering target, wherein a relative density of the target is 99% or higher, an average crystal grain size is 50 ?m or less, and a crystal grain size range is 5 to 200 ?m. The present invention aims to inhibit abnormal grain growth in the tungsten target by reducing the amount of iron in the tungsten sintered compact sputtering target.
Abstract: A material for fuel cell separator, wherein a surface layer 6 containing Au and Cr is formed on a surface of a Ti base 2, and an intermediate layer 2a containing Ti, O, Cr, and less than 20 atomic % of Au is present between the Ti base and the surface layer, a thickness of an area containing 65 atomic % or more of Au being 1.5 nm or more, a maximum concentration of Au being 80 atomic % or more, a coating amount of Au being 9000 to 40000 ng/cm2, a ratio represented by (Au coating amount)/(Cr coating amount) being 10 or more, a coating amount of Cr being 200 ng/cm2 or more, and in the intermediate layer having an area containing 10% or more of Ti, 10% or more of O and 20% or more of Cr being 1 nm or more.
Abstract: A sputtering target containing 20 at % to 40 at % of Te, 5 at % to 20 at % of Cu, 5 at % to 15 at % of Zr, and remainder being Al, wherein a structure of the sputtering target is comprise of an Al phase, a Cu phase, a CuTeZr phase, a CuTe phase and a Zr phase. The present invention aims to provide an Al—Te—Cu—Zr-based alloy sputtering target capable of effectively suppressing the degradation of properties caused by compositional deviation, as well as a method of manufacturing the same.
Abstract: Provided is an oxide-containing magnetic material sputtering target wherein the oxides have an average grain diameter of 400 nm or less. Also provided is a method of producing an oxide-containing magnetic material sputtering target. The method involves depositing a magnetic material on a substrate by the PVD or CVD method, then removing the substrate from the deposited magnetic material, pulverizing the material to obtain a raw material for the target, and further sintering the raw material. An object of the present invention is to provide a magnetic material target, in particular a nonmagnetic grain-dispersed ferromagnetic sputtering target capable of suppressing discharge abnormalities of oxides that are the cause of particle generation during sputtering.
Abstract: Provided is a copper foil for a printed wiring board including a roughened layer on at least one surface thereof. In the roughened layer, the average diameter D1 at the particle bottom being apart from the bottom of each particle by 10% of the particle length is 0.2 to 1.0 ?m, and the ratio L1/D1 of the particle length L1 to the average diameter D1 at the particle bottom is 15 or less. In the copper foil for printed wiring board, when a copper foil for printed wiring having a roughened layer is laminated to a resin and then the copper layer is removed by etching, the sum of areas of holes accounting for the resin roughened surface having unevenness is 20% or more. The present invention involves the development of a copper foil for a semiconductor package substrate that can avoid circuit erosion without causing deterioration in other properties of the copper foil.
Abstract: A high-purity copper sputtering target, wherein a Vickers hardness of a flange part of the target is in a range of 90 to 100 Hv, a Vickers hardness of an erosion part in the central area of the target is in a range of 55 to 70 Hv, and a crystal grain size of the erosion part is 80 ?m or less. This invention relates to a high-purity copper sputtering target that does not need to be bonded to a backing plate (BP), and aims to provide a high-purity copper sputtering target capable of forming a thin film having superior uniformity by enhancing a strength (hardness) of the flange part of the target, and reducing an amount of warpage of the target. Moreover, the uniformity of the film thickness is improved by adjusting the (111) orientation ratio of the erosion part and the flange part in the target.
Abstract: Provided is a ferromagnetic material sputtering target containing a matrix phase made of cobalt, or cobalt and chromium, or cobalt and platinum, or cobalt, chromium and platinum, and an oxide phase including at least chromium oxide, wherein the ferromagnetic material sputtering target contains one or more types among Y, Mg, and Al in a total amount of 10 wtppm or more and 3000 wtppm or less, and has a relative density of 97% or higher. The provided ferromagnetic material sputtering target containing chromium oxide can maintain high density, has uniformly pulverized oxide phase grains therein, and enables low generation of particles.
Abstract: A copper alloy sputtering target is provided and contains 0.01 to (less than) 0.5 wt % of at least one element selected from Al or Sn, and containing Mn or Si in a total amount of 0.25 wtppm or less. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics. A semiconductor element wiring formed with this target is also provided.
Abstract: An indium sputtering target with a short time to attain a stable film deposition rate once sputtering has begun is provided. An indium sputtering target having a surface to be sputtered with an arithmetic average roughness Ra of from 5 ?m to 70 ?m prior to sputtering.
Abstract: Provided are an indium cylindrical sputtering target capable of providing good film thickness distribution and a method for production thereof. The indium cylindrical target comprises crystal grains whose average size is 1 mm to 20 mm over its surface to be sputtered. The method for manufacturing the indium cylindrical target includes the steps of: casting a semi-finished product of an indium cylindrical target integrated with a backing tube; and subjecting the semi-finished product to plastic working in its radial direction, wherein the plastic working is performed with a total thickness reduction rate of at least 10% over its longitudinal direction.
Abstract: A magnetic material sputtering target characterized in that, in a plane for observing the oxide in the target, oxide grains in the target have an average diameter of 1.5 ?m or less, and that 60% or more of the oxide grains in the observing plane of the target have a difference between a maximum diameter and a minimum diameter of 0.4 ?m or less, where the maximum diameter is a maximum distance between arbitrary two points on the periphery of an oxide grain, and the minimum diameter is a minimum distance between two parallel lines across the oxide grain. A non-magnetic grain dispersion-type magnetic material sputtering target that can inhibit abnormal discharge due to an oxide causing occurrence of particles during sputtering is obtained.
Abstract: Provided is a ruthenium alloy sputtering target as a ruthenium alloy sintered compact target obtained by sintering mixed powder of ruthenium powder and metal powder capable of creating oxides easier than ruthenium, wherein purity of the target excluding gas components is 99.95 wt % or higher, said target contains 5 at % to 60 at % of metal capable of creating oxides easier than ruthenium, relative density is 99% or higher, and oxygen content as impurities is 1000 ppm or less. This ruthenium alloy sputtering target is capable of reducing its oxygen content, reducing the generation of arcing and particles during sputtering, increasing the target strength by improving the sintered density, and improving the deposition quality by strictly restricting the amount of B and P impurities in the target in order to prevent the compositional variability of B and P added in minute amounts to the Si semiconductor.
Abstract: A sputtering target containing, as metal components, 0.5 to 45 mol % of Cr and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from regions where oxides including at least Ti oxide are dispersed in Co (non-Cr-based regions), and a region where oxides other than Ti oxide are dispersed in Cr or Co—Cr (Cr-based region), and the non-Cr-based regions are scattered in the Cr-based region. An object of this invention is to provide a sputtering target for forming a granular film which suppresses the formation of coarse complex oxide grains and generates fewer particles during sputtering.