Abstract: Provided is a method for processing electronic/electrical device component waste, which can increase an amount of electronic/electrical device component waste processed in a smelting step and efficiently recover valuable metals.

Abstract: Provided is a method for removing wire-form objects, a device for removing wire-form objects, and a method for processing electronic/electrical apparatus component waste, which can efficiently sort wire-form objects from sorting target objects having various shapes. The method for removing wire-form objects includes: arranging a filter in a vibrating sieve machine, the filter including a plurality of rods extending at distances in a feed direction of a raw material; and placing a raw material containing at least wire-form objects and plate-form objects onto the filter, and vibrating the filter to sieve out the wire-form objects under a sieve.

Abstract: Providing a method of recovering Cu from copper ore containing Hg. A method for recovering Cu from copper ore, the method comprising: (A) providing copper ore containing Hg with an amount of 0.2 ppm or more; (B) treating the copper ore to leach Cu and Hg with use of solution containing iodide ions and Fe (3+); and (C) treating post-leaching solution with activated carbon to absorb the iodide ions and Hg.

Abstract: The present invention provides a titanium copper foil having improved adhesion to solder and higher resistance to discoloration due to a high temperature and high humidity environment, an acid solution or an alkaline solution, and as well as having improved etching processability. The present invention provides a titanium copper foil comprising a base metal, the base metal having a composition containing Ti of from 1.5 to 5.0% by mass, the balance being copper and inevitable impurities, and having a thickness of from 0.018 to 0.1 mm, wherein the titanium copper foil has a plated layer in which an underlying Cu plated layer and a Sn plated layer have been laminated in this order on a surface of the base metal, and has an adhesive strength of 1 N or more as measured by a solder adhesive strength test according to the definition in the specification.

Abstract: Provided is a method for processing electronic and electrical device component scrap, which can increase an amount of electronic and electrical device component scrap processed in a smelting step and efficiently recover valuable metals. The method for processing electronic and electrical device component scrap includes: a step 1 of removing powdery materials and film-shaped component scrap from the electronic and electrical device component scrap; a step 2 of concentrating synthetic resins and substrates from the electronic and electrical device component scrap from which the powdery materials and film-shaped component scrap have been removed; and a step 3 of concentrating the substrates containing valuable metals from a concentrate obtained in the step 2.

Abstract: Provided is a radiation detection element, including: a plurality of electrode portions on a surface of a substrate; and an insulating portion between the electrode portions, the substrate being made of a compound semiconductor crystal containing cadmium telluride or cadmium zinc telluride, wherein an intermediate layer containing tellurium oxide is present between each of the electrode portions and the substrate, and wherein the tellurium oxide layer has a thickness of 100 nm or less on a 500 nm inner side from an end portion of the insulating portion between the electrode portions. The radiation detection element has higher adhesion of the electrodes, and does not result in an element performance defect caused by insufficient insulation between the electrodes, even if the radiation detection element has a narrower distance between the electrode portions in order to obtain a high-definition radiographic image.

Abstract: A method for recovering gold from an ore or a refining intermediate containing gold, comprising a step of contacting a gold-containing raw material obtained from the ore or the refining intermediate with an acidic solution containing a copper ion, an iron ion and a halide ion while supplying an oxidizing agent to leach the gold component in the raw material. The halide ion in the acidic solution is only a bromide ion, wherein the concentration of the bromide ion in the acidic solution is 100 g/L or more or the concentration of the bromide ion in the acidic solution is less than 100 g/L. When the concentration of the bromide ion is less than 100 g/L, a concentration ratio of the halide ion in the acidic solution is such that a ratio of the concentration of the chloride ion to the concentration of the bromide ion is ? or less.

Abstract: Provided is anhydrous nickel chloride having a total content of impurity elements other than gas components of less than 10 wt. ppm; each content of boron, sodium, magnesium, aluminum, potassium, calcium, titanium, chromium, manganese, iron, copper, zinc, arsenic, silver, cadmium, indium, tin, thallium and lead of less than 1 wt. ppm, which can be produced by a method for producing anhydrous nickel chloride comprising the steps of carrying out ion exchange membrane electrolysis in an anolyte and a catholyte separated by an anion exchange membrane using raw metal nickel as an anode, a conductive material as a cathode and high purity hydrochloric acid as an electrolytic solution, to obtain a nickel chloride solution as the anolyte; concentrating the obtained nickel chloride solution by heating it at 80 to 100° C. under atmospheric pressure to obtain a concentrated nickel chloride solution; and dehydrating and drying the resulting concentrated nickel chloride solution by heating it at 180 to 220° C.

Abstract: Provided is a radiation detecting element that has high adhesion between electrode portions and a substrate and does not suffer from performance failures due to insufficient insulation between the electrode portions, even if a distance between the electrode portions is narrower in order to obtain a high-definition radiation drawn image. The radiation detecting element includes: a plurality of electrode portions; and an insulating portion provided between the electrode portions on a surface of a substrate made of a compound semiconductor crystal containing cadmium telluride or cadmium zinc telluride, wherein an intermediate layer containing tellurium oxide is present between each of the electrode portions and the substrate, and wherein tellurium oxide is present on an upper portion of the insulating portion, and the tellurium oxide on the upper portion of the insulating portion has a maximum thickness of 30 nm or less.

Abstract: A surface-treated plated material is provided. The surface-treated plated material can suppress generation of whiskers, maintain good solderability and low contact resistance even when exposed to an elevated temperature environment, and have lower insertion force for terminals/connectors. The surface-treated plated material comprises a substrate provided with an upper layer, and the upper layer comprises a plated material containing Sn or In. A surface of the plated material contains at least one compound represented by a certain general formula and at least one compound represented by a certain general formula. One or more compounds selected from a group D of constituent compounds represented by certain general formulae are further applied onto a surface on the upper layer side.

Abstract: A method for processing lithium ion battery scrap includes a leaching step of leaching lithium ion battery scrap and subjecting the resulting leached solution to solid-liquid separation to obtain a first separated solution; an iron removal step of adding an oxidizing agent to the first separated solution and adjusting a pH of the first separated solution in a range of from 3.0 to 4.0, then performing solid-liquid separation and removing iron in the first separated solution to obtain a second separated solution; and an aluminum removal step of neutralizing the second separated solution to a pH range of from 4.0 to 6.0, then performing solid-liquid separation and removing aluminum in the second separated solution to obtain a third separated solution.

Abstract: A cylindrical sputtering target includes a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween. The plurality of cylindrical sintered compacts have a relative density of 99.7% or higher and 99.9% or lower. The plurality of cylindrical sintered compacts adjacent to each other have a difference therebetween in the relative density of 0.1% or smaller.

Abstract: Sb—Te-based alloy sintered sputtering target having a Sb content of 10 to 60 at %, a Te content of 20 to 60 at %, and remainder being one or more types of elements selected from Ag, In, and Ge and unavoidable impurities, wherein an average grain size of oxides is 0.5 ?m or less. An object of this invention is to improve the texture of the Sb—Te-based alloy sintered sputtering target in order to prevent the generation of arcing during sputtering and improve the thermal stability of the sputtered film.

Abstract: The purpose of the present invention is to safely synthesize high purity tungsten pentachloride at a higher yield and at a higher purity than in prior art. This method for producing tungsten pentachloride includes: a step of mixing a reducing agent selected from the group consisting of Bi, Hg, Sb, Ti, Al, P, and As with tungsten hexachloride uniformly in an inert atmosphere with a molar ratio of the tungsten hexachloride to the reducing agent being 2.8:1.0 to 3.2:1.0 to obtain a mixture; a step of heating the mixture of the reducing agent and the tungsten hexachloride to 80 to 210° C. at 13 Pa or lower and reducing the same; a step of heating the reduced product of the mixture of the reducing agent and the tungsten hexachloride to 120 to 290° C. at 66 Pa or lower and vacuum distilling the same to remove impurities; and a step of heating the reduced product from which impurities have been removed by the vacuum distillation to 140 to 350° C.

Abstract: (1) The present invention provides a method for manufacturing a sputtering target in which the controllability of crystal orientation is improved. Specifically, the present invention provides a method for manufacturing a sputtering target, comprising a step of shaping at least one raw material powder selected from a metal and a metal oxide into a desired target shape using an additive manufacturing method. (2) The present invention provides a method for manufacturing a sputtering target capable of improving production efficiency. Specifically, the present invention provides a method for manufacturing a sputtering target in which a backing plate and a sputter part are bonded, comprising a shaping step of shaping at least one raw material powder selected from a metal and a metal oxide into a desired sputter part shape on a backing plate or on an intermediate material provided on a backing plate using an additive manufacturing method.

Abstract: A metal foil for electromagnetic shielding, comprising: a metal foil base having a thickness of exceeding 4 ?m, an alloy layer having an A element configured of Sn or In and a B element group selected from the group consisting of one or more of Ag, Ni, Fe and Co formed on one or both surfaces of the base, and an underlayer having the B element group formed between the alloy layer and the base, wherein an adhesion amount of the A element is 10 to 300 ?mol/dm2, and a total adhesion amount of the B element group is 40 to 900 ?mol/dm2.

Abstract: Provided is an oxide grain-dispersed ferromagnetic material sputtering target having a fine structure which can effectively reduce abnormal discharge and generation of particles caused by oxide grains. A sintered sputtering target contains, as metal or an alloy, 0 mol % or more and 45 mol % or less of Pt, 55 mol % or more and 95 mol % or less of Co, and 0 mol % or more and 40 mol % or less of Cr; and further contains at least two kinds of oxides. The oxides are present in the metal or alloy, and the standard deviation of the number density of oxides is 2.5 or less.

Abstract: The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials.

Abstract: A copper alloy sheet material which contains 0.5 to 2.5% by mass of Ni, 0.5 to 2.5% by mass of Co, 0.30 to 1.2% by mass of Si and 0.0 to 0.5% by mass of Cr, the balance being Cu and unavoidable impurities. The material fulfills the relationships 1.0?I {200}/I0 {200}?5.0 and 5.0 ?m?GS?60.0 ?m, and these have the relationship (Equation 1): 5.0?{(I {200}/I0 {200})/GS}×100?21.0, in which the I {200} represents an X-ray diffraction intensity of a {200} crystal plane, the I0 {200} represents an X-ray diffraction intensity of a {200} crystal plane of standard pure copper powder, and the GS (?m) represents an average crystal grain size. An electrical conductivity is 43.5% to 55.0% IACS and 0.2% yield strength is 720 to 900 MPa.

Abstract: Disclosed is a surface treated copper foil, which is capable of favorably reducing the transmission loss even when used in a high frequency circuit substrate, and after laminating with a resin, heating at a predetermined temperature for a predetermined time (at 180° C. for 10 days), the peel strength of the surface treated copper foil and the resin is favorable.