Abstract: Provided is a thinner Cu—Ni—Sn based copper alloy foil that has a foil thickness of 0.1 mm or less, has improved solder wettability and improved solder adhesion strength, and can be suitably used as a conductive spring material for use in electronic device parts such as autofocus camera modules; a copper rolled product; an electronic device part; and an autofocus camera module. The Cu—Ni—Sn based copper alloy foil according to one embodiment of the present invention has a foil thickness of 0.1 mm or less; and contains from 14% by mass to 22% by mass of Ni, from 4% by mass to 10% by mass of Sn, the balance being copper and inevitable impurities; and has a 60-degrees glossiness G60RD of from 200 to 600 on a surface as measured in a direction parallel to a rolling direction.

Abstract: A method for processing lithium ion battery scrap according to this invention includes a leaching step of leaching lithium ion battery scrap to obtain a leached solution; an aluminum removal step of neutralizing the leached solution to a pH range of from 4.0 to 6.0, then performing solid-liquid separation and removing aluminum in the leached solution to obtain a first separated solution; and an iron removal step of adding an oxidizing agent to the first separated solution and adjusting the pH in a range of from 3.0 to 5.0, then performing solid-liquid separation and removing iron in the first separated solution to obtain a second separated solution.

Abstract: Disclosed is a surface treated copper foil in which the dropping of the roughening particles from the roughening treatment layer provided on the surface of the copper foil is favorably suppressed. Also disclosed is a surface treated copper foil, comprising a copper foil, a roughening treatment layer on one surface, and/or another roughening treatment layer the other surface of the copper foil, wherein a height of roughening particles of the roughening treatment layer is 5 to 1000 nm from the surface, a color difference ?E*ab according to JIS Z 8730 of a surface of a side of the roughening treatment layer is 65 or less, and a glossiness of the TD of the surface of the side of the roughening treatment layer is 70% or less.

Abstract: Provided is a high-purity tin product that does not contain undesirable carbonaceous impurities as a result of the following: a vacuum-packed high-purity metal article (vacuum-packed high-purity tin article) is obtained by vacuum packaging a high-purity metal (high-purity tin), at least a portion of a surface of a high-purity metal being covered with a fluorocarbon resin sheet; and the vacuum-packed high-purity metal article(vacuum-packed high-purity tin article) is obtained by vacuum packaging, with a vacuum packaging film, the high-purity metal in which at least a portion of a surface is covered with the fluorocarbon resin sheet.

Abstract: Provided is an Fe—Pt based magnetic material sintered compact, comprising BN and SiO2 as non-magnetic materials, wherein Si and O are present in a region where B or N is present at a cut surface of the sintered compact. An object of the present invention is to provide a high density sputtering target which enables production of a magnetic thin film for heat-assisted magnetic recording media, and also reduces the amount of particles generated during sputtering.

Abstract: A method for dissolving a lithium compound according to the present invention includes bringing a lithium compound into contact with water or an acidic solution, and feeding, separately from the lithium compound, a carbonate ion to the water or the acidic solution to produce carbonic acid, and allowing the carbonic acid to react with the lithium compound to produce lithium hydrogen carbonate.

Abstract: The present invention provides a method for efficiently leaching copper from copper sulfide ore by separating and recovering iodine, and iron(III) ions to be used are regenerated by a heap of stacked ore in the method for leaching copper from copper sulfide using a sulfuric acid solution containing iodide ions and iron(III) ions as a leaching solution.

Abstract: A sodium removal method according to the present invention is a method for removing sodium from a sodium-containing solution by precipitating a sodium ion in the sodium-containing solution as a sodium salt, the method including: a sodium precipitating step of precipitating the sodium salt by decreasing a temperature of the sodium-containing solution so that a sodium concentration of the sodium-containing solution exceeds solubility of the sodium salt at said temperature; and a solid-liquid separation step of removing the precipitated sodium salt by solid-liquid separation.

Abstract: The present invention provides a method for treating at least one lithium ion battery enclosed in a housing containing aluminum, comprising heating the lithium ion battery using a combustion furnace in which a combustion object is incinerated by flames, while preventing the flames from being directly applied to the housing of the lithium ion battery.

Abstract: Provided is a magnetic material sputtering target produced from a sintered compact having a B content of 17 at % or more and 40 at % or less, and remainder being one or more elements selected from Co and Fe, wherein the target includes a B-rich phase and a B-poor phase, and a number of the B-rich phases in which a maximum inscribed circle having a diameter of 15 ?m or more can be drawn is one or less. The B-rich phase is finely dispersed in the magnetic material sputtering target of the present invention, and the machinability of the target is consequently improved. Moreover, significant effects are yielded in that the generation of particles is inhibited and the yield in the production of thin films is improved when the target is used for sputtering with a magnetron sputtering equipment comprising a DC power supply.

Abstract: The present disclosure provides a sputtering target containing one or more metals of Fe, Co, Cr, and Pt, and one or more of C and BN, with less generation of particles, and a method for producing the same. A sputtering target including: one or more metallic phases selected from a group consisting of Fe, Co, Cr, and Pt; and one or more nonmetallic phases selected from a group consisting of C and BN, wherein the sputtering target satisfies: A?40, and A/B?1.7 in which A represents the number of boundaries between the metallic phases and the nonmetallic phases on a line segment having a length of 500 ?m drawn in a vertical direction, in a structure photograph; and B represents the number of boundaries between the metallic phases and the nonmetallic phases on a line segment having a length of 500 ?m drawn in a horizontal direction, in the structure photograph.

Abstract: Provided is low alpha-ray emitting bismuth having an alpha dose of 0.003 cph/cm2 or less. Additionally provided is a method of producing low alpha-ray emitting bismuth, wherein bismuth having an alpha dose of 0.5 cph/cm2 or less is used as a raw material, the raw material bismuth is melted in a nitric acid solution via electrolysis to prepare a bismuth nitrate solution having a bismuth concentration of 5 to 50 g/L and a pH of 0.0 to 0.4, the bismuth nitrate solution is passed through a column filled with ion-exchange resin to eliminate polonium contained in the solution by an ion-exchange resin, and bismuth is recovered by means of electrowinning from the solution that was passed through the ion-exchange resin. Recent semiconductor devices are of high density and high capacity, and therefore are subject to increased risk of soft errors caused by the effects of alpha rays emitted from materials in the vicinity of semiconductor chips.

Abstract: Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. The present invention consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.

Abstract: To provide a Cu—Ni—Si based rolled copper alloy having excellent strength, electric conductivity and fatigue properties, disclosed is a Cu—Ni—Si based rolled copper alloy, comprising: a total amount of 3.0 to 4.5% by mass of at least one or more selected from the group consisting of Ni and Co, 0.6 to 1.0% by mass of Si, and the balance Cu and inevitable impurities, wherein a 0.2% yield strength YS in a direction transverse to rolling direction is 1040 MPa or more.

Abstract: A sputtering target formed from monocrystalline silicon is provided, wherein a sputter surface of the sputtering target is a plane inclined at an angle that exceeds 1° and is less than 10° from a {100} plane. The sputtering target formed from monocrystalline silicon provides a sputtering target which yields superior mechanical strength as well as exhibiting a sputter performance which is equivalent to that of a {100} plane. From a different perspective, in addition to superior mechanical strength, the monocrystalline silicon sputtering target yields superior particle characteristics, sputtering rate, crack resistance, surface shape uniformity and other characteristics.

Abstract: The purpose of the present invention is to provide a high-purity tin product not containing undesirable carbon impurities by producing a high-purity metal vacuum-packaged product (high-purity tin vacuum-packaged product) by means of vacuum-packaging of a high-purity metal (high-purity tin), wherein at least a portion of the surface of the high-purity metal is covered with dust-free paper, and the high-purity metal, at least a portion of the surface thereof being covered with the dust-free paper, is vacuum-packaged using a vacuum-packaging film.

Abstract: The present invention provides: an InP wafer optimized from the viewpoint of small edge roll-off (ERO) and sufficiently high flatness even in the vicinity of a wafer edge; and a method for effectively producing the InP wafer. The InP wafer having a roll-off value (ROA) of from ?1.0 ?m to 1.0 ?m is obtained by using a method including: performing a first stage polishing under a processing pressure of from 10 to 200 g/cm2 for a processing time of from 0.1 to 5 minutes, while supplying a polishing solution containing bromine to at least one side of an InP single crystal substrate that will form the InP wafer; and performing a second stage polishing under a processing pressure of from 200 to 500 g/cm2 for a processing time of from 0.5 to 10 minutes, provided that the processing pressure is higher than that of the first stage polishing by 50 g/cm2 or higher.

Abstract: A cylindrical sputtering target includes a cylindrical substrate and a cylindrical sputtering target member joined together with a joining material. Where the joining material has a thickness of d (?m), the joining material has a coefficient of thermal expansion of ?1 (?m/?mK), and a melting point of the joining material and room temperature have a difference of ?T (K), a surface of the cylindrical sputtering target member on the side of the joining material has a value of ten-point average roughness (Rz) fulfilling: d (?m)×?1 (?m/?mK)×?T (K)?Rz (?m).

Abstract: A first copper alloy sputtering target comprising 0.5 to 4.0 wt % of Al and 0.5 wtppm or less of Si and a second copper alloy sputtering target comprising 0.5 to 4.0 wt % of Sn and 0.5 wtppm or less of Mn are disclosed. The first and/or the second alloy sputtering target can further comprise one or more elements selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less. A semiconductor element wiring formed by the use of the above targets is also disclosed. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics.

Abstract: A copper alloy sheet material includes 0.5 to 2.5 mass % of Ni, 0.5 to 2.5 mass % of Co, 0.30 to 1.2 mass % of Si and 0.0 to 0.5 mass % of Cr and the balance Cu and unavoidable impurities, wherein an X-ray diffraction intensity ratio is 1.0?I{200}/I0{200}?5.0 when I{200} is a result of the X-ray diffraction intensity of {200} crystal plane of sheet surface and I0{200} is a result of the X-ray diffraction intensity of {200} crystal plane of a standard powder of pure copper, and wherein 0.2% yield strength in a rolling parallel direction (RD) is 800 MPa or more and 950 MPa or less, an electrical conductivity of 43.5% IACS or more and 53.0% IACS or less, 180 degree bending workability in a rolling parallel direction (GW) and a rolling perpendicular direction (BW) is R/t=0, and a difference between the rolling parallel direction (RD) and a rolling perpendicular direction (TD) of the 0.2% yield strength is 40 MPa or less.