Abstract: According to one embodiment of the present invention, the light emitting device includes an LED element, a side wall which surrounds the LED element, a phosphor layer which is fixed to the side wall with an adhesive layer therebetween, and is positioned above the LED element, and a metal pad as a heat dissipating member. The side wall includes an insulating base which surrounds the LED element and a metal layer which is formed on a side surface at the LED element side of the base, and is in contact with the metal pad and the adhesive layer. The adhesive layer includes a resin layer that includes a resin containing particles which have higher thermal conductivity than the resin or a layer that includes solder.

Abstract: A ?-Ga2O3-based single crystal substrate includes an average dislocation density of less than 7.31×104 cm?2. The average dislocation density may be not more than 6.14×104 cm?2. The substrate may further include a main surface including a plane orientation of (?201), (101) or (001). The substrate may be free from any twinned crystal.

Abstract: As one of purposes, the present invention provides: a single-crystal phosphor which can exhibit excellent properties under high-temperature conditions; and a light-emitting device in which the phosphor is used. As one embodiment, a single-crystal phosphor is provided, which has a chemical composition represented by the compositional formula: (Y1-x-y-zLuxGdyCez)3+aAl5-aO12(0?x?0.9994, 0?y?0.0669, 0.0002?z?0.0067, ?0.016?a?0.315).

Abstract: According to one embodiment of the present invention, the light emitting device includes an LED element, a side wall which surrounds the LED element, a phosphor layer which is fixed to the side wall with an adhesive layer therebetween, and is positioned above the LED element, and a metal pad as a heat dissipating member. The side wall includes an insulating base which surrounds the LED element and a metal layer which is formed on a side surface at the LED element side of the base, and is in contact with the metal pad and the adhesive layer. The adhesive layer includes a resin layer that includes a resin containing particles which have higher thermal conductivity than the resin or a layer that includes solder.

Abstract: A ?-Ga2O3-based single crystal substrate includes a ?-Ga2O3-based single crystal. The ?-Ga2O3-based single crystal includes a full width at half maximum of an x-ray rocking curve of less than 75 seconds.

Abstract: Provided is one embodiment which is a method for growing a ?-Ga2O3-based single crystal including contacting a flat plate-shaped seed crystal with a Ga2O3-based melt, and pulling up the seed crystal such that a flat plate-shaped ?-Ga2O3-based single crystal having a principal surface which intersects a surface is grown without inheriting a crystal information of a vaporized material of the Ga2O3-based melt adhered to the principal surface of the seed crystal, wherein when growing the ?-Ga2O3-based single crystal, a shoulder of the ?-Ga2O3-based single crystal is widened in a thickness direction (t) thereof.

Abstract: Provided is one embodiment which is a method for growing a ?-Ga2O3-based single crystal which uses the EFG method and includes raising a Ga2O3 melt inside a crucible up to a die opening via a die slit such that a seed crystal is contacted with the Ga2O3-based melt in the opening of the die with a horizontal position of the seed crystal shifted in a width direction (W) from a center in the width direction (W) of the die, and pulling up the seed crystal contacting the Ga2O3-based melt so as to grown a ?-Ga2O3 single crystal.

Abstract: Provided is a method for growing a ?-Ga2O3-based single crystal, whereby it becomes possible to grow a ?-Ga2O3-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a ?-Ga2O3-based single crystal includes growing a plate-shaped Sn doped ?-Ga2O3-based single crystal in the direction of the b axis using a seed crystal.

Abstract: A lighting device includes a translucent member having the same cross sectional tubular shape throughout a longitudinal direction and including a lens that includes a light incident surface for receiving incident light and a pair of light exit surface for diffusing and emitting the light incident on the light incident surface to the outside, and a light-emitting portion mounted on a substrate and emitting the light toward a region including the light incident surface of the translucent member, where in the translucent member includes a pair of light guide portions for guiding the light incident on the light incident surface to a pair of the light exit surfaces so that the light incident on the light incident surface is diffused and emitted from the pair of light exit surfaces in a width direction that is orthogonal to the longitudinal direction.

Abstract: Disclosed is a light source module which does not require rigorous adjustments of the light direction and is free from luminance unevenness. Specifically disclosed is a light source module (1) which comprises a light-emitting element (40), and a light direction changing element (10) which is composed of a transparent resin and discharges the light emitted from the light-emitting element (40) toward the lateral direction. The light direction changing element (10) contains not less than 0.01% by weight but not more than 0.1% by weight of a light-diffusing agent (14) per 100% by weight of the transparent resin.

Abstract: A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a Ga2O3 substrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AlN buffer layer formed on the Ga2O3 substrate, and a nitride semiconductor layer formed on the AlN buffer layer.

Abstract: A light emitting element that includes a Ga2O3 substrate; an AlxGa1-xN buffer layer (0?×?1) formed on the Ga2O3 substrate; an n-GaN layer formed on the AlxGa1-xN buffer layer; an p-GaN layer formed on a portion of the n-GaN layer; an n-electrode formed on a portion of the n-GaN layer; and an p-electrode formed on the p-GaN layer.

Abstract: Disclosed is a method for fabricating a light emitting device. The method includes forming an oxide including gallium aluminum over a gallium oxide substrate, forming a nitride including gallium aluminum over the oxide including gallium aluminum and forming a light emitting structure over the nitride including gallium aluminum.

Abstract: Provided is a crystal layered structure having a low dislocation density on the upper surface of a nitride semiconductor layer on a Ga2O3 substrate, and a method for manufacturing the same. In one embodiment, there is provided a crystal layered structure including: a Ga2O3 substrate; a buffer layer comprising an AlxGayInzN (0?x?1, 0?y?1, 0?z?1, x+y+z=1) crystal on the Ga2O3 substrate; and a nitride semiconductor layer comprising an AlxGayInzN (0?x?1, 0?y?1, 0?z?1, x+y +z=1) crystal including oxygen as an impurity on the buffer layer. The oxygen concentration in a region having a thickness of no less than 200 nm on the nitride semiconductor layer on the side towards the Ga2O3 substrate is no less than 1.0×1018/cm3.

Abstract: Provided is a semiconductor laminate structure including a Ga2O3 substrate and a nitride semiconductor layer with high crystal quality on the Ga2O3 substrate, and also provided is a semiconductor element including this semiconductor laminate structure. In one embodiment, this semiconductor laminate structure includes a ?-Ga2O3 substrate including ?-Ga2O3 crystal and a principal surface inclined from a (?201) surface to a [102] direction nd a nitride semiconductor layer including AlxGayInzN (0?x?1, 0?y?1, 0?z?1, x+y+z=1) crystal formed by epitaxial crystal growth on the principal surface of the ?-Ga2O3 substrate.

Abstract: A lighting device includes a translucent member having the same cross sectional tubular shape throughout a longitudinal direction and including a lens that includes a light incident surface for receiving incident light and a pair of light exit surface for diffusing and emitting the light incident on the light incident surface to the outside, and a light-emitting portion mounted on a substrate and emitting the light toward a region including the light incident surface of the translucent member, where in the translucent member includes a pair of light guide portions for guiding the light incident on the light incident surface to a pair of the light exit surfaces so that the light incident on the light incident surface is diffused and emitted from the pair of light exit surfaces in a width direction that is orthogonal to the longitudinal direction.

Abstract: Provided is a crystal layered structure having a low dislocation density on the upper surface of a nitride semiconductor layer on a Ga2O3 substrate, and a method for manufacturing the same. In one embodiment, there is provided a crystal layered structure including: a Ga2O3 substrate; a buffer layer comprising an AlxGayInzN (0?x?1, 0?y?1, 0?z?1, x+y+z=1) crystal on the Ga2O3 substrate; and a nitride semiconductor layer comprising an AlxGayInzN (0?x?1, 0?y?1, 0?z?1, x+y+z=1) crystal including oxygen as an impurity on the buffer layer. The oxygen concentration in a region having a thickness of no less than 200 nm on the nitride semiconductor layer on the side towards the Ga2O3 substrate is no less than 1.0×1018/cm3.

Abstract: A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1-X-Y))2O3 where 0?x?1, 0?y?1 and 0?x+y?1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.

Abstract: A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S107, an AlN buffer layer 13 is grown. In step S108, at a time t5, a source gas G1 containing hydrogen, trimethylaluminum, and ammonia, in addition to nitrogen, is supplied into a growth reactor 10 to grow the AlN buffer layer 13 on a primary surface 11a. The AlN buffer layer 13 is so called a low-temperature buffer layer. After a start of film formation of the buffer layer 13, in step S109 supply of hydrogen (H2) is started at a time t6. At the time t6, H2, N2, TMA, and NH3 are supplied into the growth reactor 10. A supply amount of hydrogen is increased between times t6 and t7, and at the time t7 the increase of hydrogen is terminated to supply a constant amount of hydrogen. At the time t7, H2, TMA, and NH3 are supplied into the growth reactor 10.

Abstract: A light-emitting element includes a ?-Ga2O3 substrate, a GaN-based semiconductor layer formed on the ?-Ga2O3 substrate, and a double-hetero light-emitting layer formed on the GaN-based semiconductor layer.