Abstract: The present invention relates to a method for growing a gallium oxide single crystal and an apparatus for growing a single crystal, and according to one aspect of the present invention, the method includes providing a gallium oxide raw material in a crucible containing iridium, injecting carbon dioxide so that a preset carbon dioxide partial pressure is formed to suppress the loss of iridium, melting the gallium oxide raw material provided in the crucible, and producing a gallium oxide single crystal from the melt.

Abstract: The present invention relates to a collection apparatus for collecting particulate matter generated due to friction between a rotor and a brake pad in a brake system of a transport facility, the collection apparatus including a first collector configured to surround a portion of an outer side surface of the rotor, an upper collector configured to surround a portion of an outer peripheral surface of the rotor, and a second collector configured to surround a portion of an inner side surface of the rotor, wherein the first collector and the second collector are made of porous ceramic foam. According to the present invention, particulate matter generated due to friction between a rotor and a brake pad in a brake system of a transport facility can be efficiently collected, and by reducing the amount of particulate matter generated when braking a transport facility, air pollution can be prevented.

Abstract: The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate.

Abstract: The present disclosure relates to a method for expressing, water-solubilizing, and purifying protein by using a calsequestrin-tag (CSQ-tag). Also provided are: a recombinant expression vector containing a CSQ-tag and a target protein; a host cell transformed using the recombinant expression vector; and a method for expressing and purifying a target protein by using a CSQ tag.

Abstract: The present invention relates to a powder for growing a gallium oxide single crystal and a method of manufacturing the same, and the powder for growing a gallium oxide single crystal according to an embodiment of the present invention is made of gallium oxide and has a bulk density of 0.7 g/cm3 or more and 1.0 g/cm3 or less.

Abstract: An antiferroelectric and a method for manufacturing an antiferroelectric are disclosed herein. The antiferroelectric may have high permittivity and breakdown voltage by having a PbxLa1-x([Zr1-YSnY]ZTi1-Z) composition. The manufacturing of the antiferroelectric may be performed through appropriate mixing and dysprosium addition.

Abstract: A device for producing nanoparticles includes: a first connector comprising a first supply tube fitting member, a second supply tube fitting member, and a first discharge tube fitting member; a first tube having one side connected to the first supply tube fitting member; a second tube having one side connected to the second supply tube fitting member; a first conduit having one side connected to the first discharge tube fitting member; a first supply connected to another side of the first tube to supply a first material to the first conduit; and a second supply connected to another side of the second tube to supply a second material to the first conduit.

Abstract: A heat dissipation material is provided. In the heat dissipation material with a filler, comprising secondary particles in which primary particles are aggregated, the filler in a polymer resin matrix may form a thermal interface layer for conduction of thermal energy between a heat generation part and a heat absorption part.

Abstract: A high permittivity antiferroelectric composition and a manufacturing method thereof aim to provide an antiferroelectric, which has a PbxLa1-x([Zr1-YSnY]ZTi1-Z) composition, is sintered at low temperatures, and has a high density and a high permittivity.

Abstract: A high-voltage antiferroelectric and a method for manufacturing the same are provided. The antiferroelectric has a composition of PbxLa1-x([Zr1-YSnY]ZTi1-Z). The antiferroelectric is sintered at a low temperature, and has a high density and a high breakdown voltage.

Abstract: The present invention provides a plasma-resistant ceramic member, which includes a substrate and a ceramic coating layer formed on the substrate, in which the ceramic coating layer includes a lower layer consisting of an oxide formed on the substrate, and a surface layer in which an oxide composition component constituting the surface of the ceramic coating layer is surface-modified with a composition containing one or more anions selected from the group consisting of F? and Cl?, wherein the surface layer is a layer in which a raw material containing one or more anions selected from the group consisting of F? and Cl? is vaporized by heating and adsorbed to the surface of the ceramic coating layer, and thus modified with a composition containing one or more anions selected from the group consisting of F? and Cl?, and a method of manufacturing the same.

Abstract: Proposed is a manufacturing method of a high-quality ?-Ga2O3 thin film using a high-quality ?-Ga2O3 thin film manufacturing apparatus based on halide vapor phase epitaxy (HVPE) growth. The apparatus includes a reaction gas generating unit in which a chlorine-based gas and Ga in a source zone react to generate GaClx, a dopant gas supply unit, an additional chlorine-based gas supply unit for supplying an additional chlorine-based gas in a source tube, oxygen-based gas supply units, and a susceptor unit supporting a substrate on which a Ga2O3 thin film is to be formed. During the epitaxial growth, the additional hydrogen chloride (HCl) gas is supplied to reduce the pre-reaction between precursors, and a movement distance to the susceptor can is increased to increase growth rate and growth speed to control the crystallinity. Thus, high-quality epitaxial growth and a high production yield can be achieved.

Abstract: A method of manufacturing a dielectric for a capacitor and a dielectric for a capacitor manufactured thereby are provided. A dielectric for a capacitor is prepared by calcining a precursor mixture containing lead, lanthanum, zirconium, and titanium to produce calcined powder, adding additives including sodium, potassium, and the like to the powder, and sintering the mixture at a low temperature, whereby the dielectric has a high density and a large dielectric constant.

Abstract: The present disclosure relates to a fusion protein of Z-domain and calsequestrin having improved reactivity, stability, and antibody recovery, and a method of isolating and purifying antibodies using the same. Specifically, the present disclosure relates to: a nucleic acid encoding a fusion protein of Z-domain and calsequestrin having improved reactivity, stability, and antibody recovery; a recombinant expression vector including the nucleic acid; a host cell transformed with the recombinant expression vector; and a method of isolating and purifying antibodies by using the fusion protein of Z-domain and calsequestrin having improved reactivity, stability, antibody recovery, and purity.

Abstract: A self-powered delineator includes a wind-powered rotatable module; a first piezoelectric energy generator module for generating electrical energy; a second piezoelectric energy generator module for generating electrical energy; and a light-emitter. The wind-powered rotatable module includes one or more first magnets spacedly arranged around a rotation shaft. The first piezoelectric energy generator module includes one or more first piezoelectric elements, and one or more second magnets disposed on the at least one first piezoelectric element. The second piezoelectric energy generator module includes at least one elastic base extending radially from a fixed shaft in a cantilever manner; and at least one second piezoelectric element on the at least one elastic base.

Abstract: Disclosed is a method of manufacturing a gallium oxide thin film for a power semiconductor using a dopant activation technology that maximizes dopant activation effect and rearrangement effect of lattice in a grown epitaxial at the same time by performing in-situ annealing in a growth condition of a nitrogen atmosphere at the same time as the growth of a doped layer is finished.

Abstract: A device for producing nanoparticles includes: a first connector comprising a first supply tube fitting member, a second supply tube fitting member, and a first discharge tube fitting member; a first tube having one side connected to the first supply tube fitting member; a second tube having one side connected to the second supply tube fitting member; a first conduit having one side connected to the first discharge tube fitting member; a first supply connected to another side of the first tube to supply a first material to the first conduit; and a second supply connected to another side of the second tube to supply a second material to the first conduit.

Abstract: A method of manufacturing a ceramic dielectric, including: heat-treating a barium precursor or a strontium precursor, a titanium precursor, and a donor element precursor to obtain a conducting or semiconducting oxide, preparing a mixture including the conducting or semiconducting oxide and a liquid-phase acceptor element precursor, and sintering the mixture to form a ceramic dielectric, wherein the ceramic dielectric includes a plurality of grains and a grain boundary between adjacent grains, and wherein the plurality of grains including an insulating oxide comprising an acceptor element derived from the acceptor element precursor.

Abstract: Provided is a complex patterning device. The complex patterning device includes a patterning module, on which a master substrate including a master pattern that contacts and is separated from a target substrate and which forms a plurality of target patterns having a reverse image of the master pattern on the target substrate by applying a pressure onto the target substrate, and a punching module including a punching mold that contacts and is separated from the target substrate, in which the plurality of target patterns are formed, and which divides at least any one of the plurality of target patterns by applying a pressure onto the target substrate.

Abstract: Provided is a complex patterning device. The complex patterning device includes a patterning module, on which a master substrate including a master pattern that contacts and is separated from a target substrate and which forms a plurality of target patterns having a reverse image of the master pattern on the target substrate by applying a pressure onto the target substrate, and a punching module including a punching mold that contacts and is separated from the target substrate, in which the plurality of target patterns are formed, and which divides at least any one of the plurality of target patterns by applying a pressure onto the target substrate.