Abstract: An imaging device in accordance with the present disclosure comprises of a pixelated array of semiconductor detector elements, each of the pixels in the array having an in-pixel integrated circuit, the integrated circuit having a comparator, a readout decoder block, and an address arbitration control block. The readout decoder block reads out the integrated signals of the pixels. The address arbitration control block determines the pixel address of the pixels charging beyond a threshold voltage, the threshold exceedance determined by the comparator. The addressed pixels are provided a timestamp for each of the pixels integrating beyond the threshold voltage, the timestamp provided by an off-pixel time-to-digital converter (TDC), the value of the timestamp corresponding with the accumulated charge of the pixel.

Abstract: A method of bonding an RE:XAB gain medium to a heat spreader includes using a bonding solution of sodium silicate with concentration of sodium silicate is Na2O at 21.2% and SiO2 at 53% with PH>=11 mixed with nano-pure water in a 1:1 ration. Applying the bonding solution onto either a surface of the RE:XAB or a surface of the heat spreader, aligning the RE:XAB and the heat spreader, applying pressure to draw the surfaces of the RE:XAB gain medium and the heat spreader together thereby uniformly spreading the bonding solution; and then curing the bonding solution.

Abstract: An avalanche photodiode device operated in Geiger-mode, the device comprising a P-N junction formed on a substrate with a first semiconductor region and a second semiconductor region with an anode and cathode. The device further comprising a third semiconductor region, the third semiconductor region in physical contact with the second region, not in physical contact with the first region, and being the same semiconductor-type as the first semiconductor region. Additionally comprising a diode on the second semiconductor region and having a turn-on voltage than the P-N junction.