Abstract: Apart from the base fingers (10), this transistor includes a titanium silicide coating, from which the base diffusions have been formed, and a silicon nitride coating (4). The edges of sandwiches made up of bands (3) and (4) are bordered by a silica bank (7) formed automatically by deposit and anisotropic attack, without additional masking. The emitter fingers (9) are overhung by a polycrystalline silicon layer (8) from which doping of these fingers has been obtained.The possibility is also obtained, automatically and without masks alignment, of having the emitter and base fingers brought firmly together with minimum protection distances.

Abstract: In the pressure association of a main component such as a Darlington transistor or an amplifying gate thyristor and a storage diode, a specific destorage diode comprising an annular junction. Thus, transversally to the center of the diode a N.sup.+ NN.sup.+ structure appears while, transversally to the periphery an N.sup.+ NP structure exists.

Abstract: In a stack of diodes forming a vertical multijunction photovoltaic cell, an inversely connected diode is firmly secured to this stack with possible insertion of a intermediate wafer made from a conducting material.

Abstract: A solar cell cooling process. The device implementing this process comprises a transparent assembly disposed in front of a photovoltaic cell. The transparent assembly, through which flows the cooling fluid leaving a radiator integral with the cell, absorbs the wavelengths greater than 1.1. micron. Thus, heating of the cell is limited and the fluid leaving the radiator is heated by the beam striking the cell.

Abstract: An over-voltage clipping diode comprising a plurality of serial elementary diode chips. Each diode chip is sandwiched between two distributor blocks made of a material which has a high thermal conductivity and a high thermal capacity with respect to the semi-conductive material of the diode chips.

Abstract: A method is disclosed wherein grooves between elementary chips of a semiconductive wafer are stepped and then glassivated whereby the glassivation does not raise above the surface of the wafer.