Patents Assigned to Lextar Electronics Corporation
  • Patent number: 11355675
    Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, in which the first protective layer includes silicon dioxide, and in silicon atoms of the silicon dioxide, the silicon atom of the zeroth configuration (Q0) does not connect with any siloxy group, and the silicon atom of the first configuration (Q1) connects with one siloxy group, and the silicon atom of the second configuration (Q2) connects with two siloxy groups, and the silicon atom of the third configuration (Q3) connects with three siloxy groups, and the silicon atom of the fourth configuration (Q4) connects with four siloxy groups, in which a total amount of the silicon atoms of the third configuration and the fourth configuration is greater than a total amount of the silicon atoms of the zeroth configuration, the first configuration and the second configuration.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: June 7, 2022
    Assignee: Lextar Electronics Corporation
    Inventors: Chang-Zhi Zhong, Hung-Chun Tong, Yu-Chun Lee, Tzong-Liang Tsai
  • Patent number: 11306894
    Abstract: An optical element includes a bottom surface, a total reflection surface above the bottom surface, a recess recessed from the bottom surface toward the total reflection surface and first and second light exit surfaces. The optical element has a central axis perpendicular to the bottom surface. The total reflection surface has a peripheral boundary away from the central axis. The first light exit surface is connected to the peripheral boundary of the total reflection surface and extends toward the bottom surface away from the central axis. The second light exit surface is connected to the first light exit surface, extends away from the central axis, and is connected to the bottom surface. Each of the first and second light exit surfaces is consisted of at least one linear sub-refractive surface. Each linear sub-refractive surface is a straight line in any cross section passing through the central axis.
    Type: Grant
    Filed: September 9, 2020
    Date of Patent: April 19, 2022
    Assignee: Lextar Electronics Corporation
    Inventor: Hsu-Wen Cheng
  • Patent number: 11302678
    Abstract: A light-emitting package structure includes a light transmissive adhesive layer, a substrate, and at least one light-emitting diode chip. The light transmissive adhesive layer includes a first surface and a second surface facing away from the first surface. The substrate is on the first surface of the light transmissive adhesive layer. The light-emitting diode chip is on the second surface of the light transmissive adhesive layer. The light transmissive adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, a vertical projection area of the second portion on the substrate at least entirely covers a vertical projection area of the light-emitting diode chip on the substrate, and a thickness of the second portion is smaller than or equal to a thickness of the first portion.
    Type: Grant
    Filed: November 28, 2019
    Date of Patent: April 12, 2022
    Assignee: Lextar Electronics Corporation
    Inventors: Hung-Chun Tong, Fu-Hsin Chen, Wen-Wan Tai, Yu-Chun Lee, Tzong-Liang Tsai
  • Patent number: 11294238
    Abstract: A low blue light backlight module configured to emit a white light is provided. The low blue light backlight module includes a first light-emitting element, a second light-emitting element, a third light-emitting element and a fourth light-emitting element. The first light-emitting element is configured to emit a first light having a peak emission wavelength of about 610-660 nm. The second light-emitting element is configured to emit a second light having a peak emission wavelength of about 520-550 nm. The third light-emitting element is configured to emit a third light having a peak emission wavelength of about 480-580 nm. The fourth light-emitting element is configured to emit a fourth light having a peak emission wavelength of about 445-470 nm. The white light has an emission spectrum, and an area ratio of the spectrum under wavelength of 415-455 nm to the spectrum under wavelength of 400-500 nm is below 50%.
    Type: Grant
    Filed: October 29, 2020
    Date of Patent: April 5, 2022
    Assignee: Lextar Electronics Corporation
    Inventors: Kiet Tuong Ly, Fu-Hsin Chen, Yi-Ting Tsai, Hung-Chia Wang, Chia-Chun Hsieh, Hung-Chun Tong, Yu-Chun Lee, Tzong-Liang Tsai
  • Patent number: 11296269
    Abstract: The light emitting diode packaging structure includes a flexible substrate, a first adhesive layer, a micro light emitting element, a conductive pad, a redistribution layer, and an electrode pad. The first adhesive layer is disposed on the flexible substrate. The micro light emitting element is disposed on the first adhesive layer. The micro light emitting element has a first surface facing to the first adhesive layer and a second surface opposite to the first surface. The conductive pad is disposed on the second surface of the micro light emitting element. The redistribution layer covers the micro light emitting element and the conductive pad. The electrode pad is disposed on the redistribution layer and is electrically connected to the circuit layer. A total thickness of the flexible substrate, the first adhesive layer, the redistribution layer, and the electrode pad is less than 200 um.
    Type: Grant
    Filed: July 30, 2020
    Date of Patent: April 5, 2022
    Assignee: Lextar Electronics Corporation
    Inventors: Chih-Hao Lin, Jo-Hsiang Chen, Shih-Lun Lai, Min-Che Tsai, Jian-Chin Liang
  • Patent number: 11289625
    Abstract: A light emitting diode includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a patterned electrode layer, a flat layer and a reflective layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. The second type semiconductor layer includes a first surface and a second surface having a first arithmetic mean roughness. The patterned electrode layer is disposed on the second surface of the second type semiconductor layer. The planarization layer is disposed on the second type semiconductor layer. The planarization layer includes a third surface and a fourth surface. The third surface is in contact with the second surface of the second type semiconductor layer. The fourth surface has a second arithmetic mean roughness that is less than the first arithmetic mean roughness.
    Type: Grant
    Filed: January 14, 2020
    Date of Patent: March 29, 2022
    Assignee: Lextar Electronics Corporation
    Inventors: Shiou-Yi Kuo, Te-Chung Wang
  • Patent number: 11271371
    Abstract: A light emitting device includes an edge emitting laser chip and a reflecting mirror. The edge emitting laser chip has light emitting ports arranged in parallel in a first direction. The light emitting ports emit light beams in a second direction. The reflecting mirror includes a reflecting surface used to reflect the light beams to a third direction. The first, second and third direction are perpendicular to each other. The light beams are emitted to the reflecting surface through the virtual incident plane and project first light spots on the reflecting surface. Each projected light spot has a first axis length in the first direction and a third axis length in the third direction. An interval between two immediately-adjacent light emitting ports is greater than the first axis length of one of the two projected light spots aligned with the two immediately-adjacent light emitting ports.
    Type: Grant
    Filed: August 4, 2020
    Date of Patent: March 8, 2022
    Assignee: Lextar Electronics Corporation
    Inventors: Ting-Kai Chen, Lung-Kuan Lai, Jian-Chin Liang
  • Patent number: 11245056
    Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, and the first protective layer includes aluminum silicate. The aluminum silicate includes a plurality of silicon atoms, each of the silicon atoms is one of a zeroth configuration Q4(0Al), first configuration Q4(1Al), second configuration Q4(2Al), third configuration Q4(3Al), and fourth configuration Q4(4Al). The silicon atoms of the zeroth configuration do not connect with aluminum oxide group, and the silicon atoms of the first, second, third, and fourth configurations respectively connect with one, two, three, and four aluminum oxide group(s). A total number of the silicon atoms of the third configuration and the fourth configuration is larger than a total number of the silicon atoms of the zeroth configuration, the first configuration, and the second configuration.
    Type: Grant
    Filed: November 28, 2019
    Date of Patent: February 8, 2022
    Assignee: Lextar Electronics Corporation
    Inventors: Chang-Zhi Zhong, Hung-Chia Wang, Hung-Chun Tong, Yu-Chun Lee, Tzong-Liang Tsai
  • Patent number: 11152540
    Abstract: A light emitting diode structure includes a semiconductor stack and a supporting breakpoint. The semiconductor stack includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The first semiconductor layer has a light emitting surface exposed outside and the light emitting surface has a rough texture. The light emitting layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the light emitting layer, and the second semiconductor layer has a type that is different from the first semiconductor layer. The supporting breakpoint is on the light emitting surface. The light emitting diode structure can be applied in wide color gamut (WCG) backlight module or ultra-thin backlight module.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: October 19, 2021
    Assignee: Lextar Electronics Corporation
    Inventor: Shiou-Yi Kuo
  • Patent number: 11132936
    Abstract: The present disclosure relates to a pixel circuit including a light emitting unit, a processing circuit and a driving circuit. The processing circuit is configured to receive a frame display signal, and is configured to calculate the frame display signal to generate a driving duty cycle corresponding to a driving period according to a driving current value. The driving circuit is electrically connected to the processing circuit and the light emitting unit, and is configured to drive the light emitting unit during the driving period according to the driving duty cycle, the driving current value and a driving frequency.
    Type: Grant
    Filed: November 3, 2019
    Date of Patent: September 28, 2021
    Assignee: Lextar Electronics Corporation
    Inventors: Chien-Nan Yeh, Jian-Chin Liang
  • Patent number: 11121288
    Abstract: A package structure of a light-emitting element includes a shell, a first conductive path, a second conductive path, a light-emitting device, a cover, a first light-transmitting sensing electrode, and a second light-transmitting sensing electrode. The shell has a top surface and a bottom surface, and the top surface is recessed toward the bottom surface to form an accommodating space. Each of the first and second conductive paths extends from the top surface to the bottom surface. The light-emitting device is disposed in the accommodating space. The cover is disposed over the shell. The first and second light-transmitting sensing electrodes are disposed on the same surface of the cover, and a capacitance is formed between the first and second light-transmitting sensing electrodes. The first and second light-transmitting sensing electrodes are electrically connected to the first and second conductive paths, respectively.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: September 14, 2021
    Assignee: Lextar Electronics Corporation
    Inventors: Jung-Tang Chu, Kun-Yang Hsieh, Che-Hung Lin, Yu-Jen Cheng
  • Patent number: 11038088
    Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.
    Type: Grant
    Filed: October 14, 2019
    Date of Patent: June 15, 2021
    Assignee: Lextar Electronics Corporation
    Inventors: Te-Chung Wang, Shiou-Yi Kuo
  • Patent number: 11018182
    Abstract: A pixel structure includes a light emitting diode chip and a light blocking structure. The light emitting diode chip includes a P-type semiconductor layer, an active layer, an N-type semiconductor layer, a first electrode, and K second electrodes. The active layer is located on the P-type semiconductor layer. The N-type semiconductor layer is located on the active layer. The N-type semiconductor layer has a first top surface that is distant from the active layer. The first electrode is electrically connected to the P-type semiconductor layer. The light blocking structure is located in the light emitting diode chip and defines K sub-pixel regions. The active layer and the N-type semiconductor layer are divided into K sub-portions respectively corresponding to the K sub-pixel regions by the light blocking structure. The K sub-pixel regions share the P-type semiconductor layer.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: May 25, 2021
    Assignee: Lextar Electronics Corporation
    Inventors: Yi-Jyun Chen, Li-Cheng Yang, Yu-Chun Lee, Shiou-Yi Kuo, Chih-Hao Lin
  • Patent number: 10991855
    Abstract: A white light emitting device includes a blue LED chip having a dominant emission wavelength of about 440-465 nm, and a phosphor layer configured to be excited by the dominant emission wavelength of the blue LED chip. The phosphor layer includes a first phosphor having a peak emission wavelength of about 480-519 nm, a second phosphor having a peak emission wavelength of about 520-560 nm, and a third phosphor having a peak emission wavelength of about 620-670 nm. The first phosphor and the second phosphor both have a garnet structure as represented by A3B5O12:Ce, A is selected from the group consisting of Y, Lu, and a combination of thereof, and B is selected from the group consisting of Al, Ga, and a combination of thereof.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: April 27, 2021
    Assignee: Lextar Electronics Corporation
    Inventors: Cheng-Ping Chang, Zong-Han Yu, Kuo-Chan Hung
  • Patent number: 10978622
    Abstract: A nitride phosphor, and a light emitting device and a backlight module employing the nitride phosphor. The nitride phosphor has the formula (Sr1-x, Bax)LiAl3N4-nOn:Eu3+y, Eu2+z with 0<x<1 and y/z>0.1. The light emitting device includes a light emitting diode configured to emit a first light and the nitride phosphor configured to convert a portion of the first light to a second light. A backlight module includes a printed circuit board and a plurality of the light emitting devices.
    Type: Grant
    Filed: August 11, 2019
    Date of Patent: April 13, 2021
    Assignee: Lextar Electronics Corporation
    Inventors: Yi-Ting Tsai, Yu-Chun Lee, Tzong-Liang Tsai
  • Patent number: 10971650
    Abstract: A light emitting device includes a stacked structure and a first insulating layer covering at least side surfaces of the stacked structure including a p-type and n-type semiconductor layers, a light emitting layer sandwiched between the p-type and n-type semiconductor layers, an n-type electrode on the n-type semiconductor layer, an n-type contact layer sandwiched between the n-type semiconductor layer and the n-type electrode, a p-type electrode on the p-type semiconductor layer, an n-type contact pad on the n-type electrode, a p-type contact pad on the p-type electrode, and a semiconductor reflector between the light emitting layer and the n-type contact layer including multiple periods, each period including at least a first layer and at least a second layer having a refractive index different from a refractive index of the first layer. The light emitting device could be applied to wide color gamut (WCG) backlight modules or ultra-thin backlight modules.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: April 6, 2021
    Assignee: Lextar Electronics Corporation
    Inventor: Shiou-Yi Kuo
  • Patent number: 10944034
    Abstract: A light emitting diode includes a base layer, an electric contact layer, a semiconductor stack, and an insulation layer. The base layer has a maximum of a first width. The electric contact layer has a maximum of a second width and is disposed on the base layer. The semiconductor stack disposed on the electric contact layer has a maximum of a third width, and includes a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer stacked in sequence, wherein a width of the first type semiconductor layer is smaller than the maximum of the third width. The insulation layer covers the sidewalls of the base layer, the electric contact layer, and the semiconductor stack. The maximum of the second width is greater than the maximum of the third width and the maximum of the second width is less than the maximum of the first width.
    Type: Grant
    Filed: August 14, 2019
    Date of Patent: March 9, 2021
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventor: Shiou-Yi Kuo
  • Patent number: 10908344
    Abstract: A light-emitting module structure includes a substrate, a plurality of light-emitting diodes (LEDs) disposed on the substrate, and a light-guiding layer covering the light-emitting diodes. The light-guiding layer has an upper surface, the upper surface has a plurality of recesses, and the recesses are above the light-emitting diodes or between the light-emitting diodes. This light-emitting module structure can improve the brightness and uniformity of the light-emitting module.
    Type: Grant
    Filed: April 3, 2019
    Date of Patent: February 2, 2021
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Pei-Song Cai, Lung-Kuan Lai, Shih-Yu Yeh, Guan-Zhi Chen, Hong-Zhi Liu, Kuo-Yen Chang, Ching-Hua Li
  • Patent number: 10816716
    Abstract: A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: October 27, 2020
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Hung-Chia Wang, Xue-Jie Zhang, Shin-Ying Lin, An-Cih Tang, Ru-Shi Liu, Tzong-Liang Tsai, Yu-Chun Lee, Ching-Yi Chen, Hung-Chun Tong
  • Patent number: 10811396
    Abstract: A display device includes a substrate, a light-emitting member, and an anti-reflective glass layer. The light-emitting member is on the substrate. The anti-reflective glass layer is over the light-emitting member, and the anti-reflective glass layer has a transmittance of 40-95%. The anti-reflective glass layer includes a glass layer and a light-absorbing layer. The glass layer has a rough top surface and a haze of 70-80%. The light-absorbing layer is on the rough top surface of glass layer.
    Type: Grant
    Filed: January 20, 2019
    Date of Patent: October 20, 2020
    Assignee: Lextar Electronics Corporation
    Inventors: Cheng-Yu Tsai, Jian-Chin Liang, Jo-Hsiang Chen