Abstract: A simplified boundary scan test method capable of performing boundary test scanning of semiconductor chips. The test method comprises providing valid test data to a first terminal of the semiconductor device and purposely providing invalid test data to a second terminal of the semiconductor device in a predetermined pattern algorithm. Preload data is also preloaded onto the semiconductor device. The valid and invalid test data is then captured in the semiconductor device. If the captured data is as expected, it signifies that there is no problem with the boundary scan circuitry on the device. On the other hand if the captured data differs from what is expected, it signifies that there may be a problem with the boundary scan circuitry.

Abstract: The present invention relates to a method of fabricating planar semiconductor wafers. The method comprises forming a dielectric layer on a semiconductor wafer surface, the semiconductor wafer surface having vias, trenches and planar regions. A barrier and seed metal layer is then formed on the dielectric layer. The wafer is next place in a plating bath that includes an accelerator, which tends to collect in the vias and trenches to accelerate the rate of plating in these areas relative to the planar regions of the wafer. After the gapfill point is reached, the plating is stopped by removing the plating bias on wafer. An equilibrium period is then introduced into the process, allowing higher concentrations of accelerator additives and other components of the bath)] above the via and trench regions to equilibrate in the plating bath. The bulk plating on the wafer is resumed after equilibration.

Abstract: A semiconductor package for reducing signal cross talk between wire bonds of semiconductor packages by using a tier of input-output power bond pads between two tiers of signal bond pads. The package includes a substrate having a first surface and a second surface and a die attach area on the first surface of the substrate. A first tier of signal contacts is arranged around the periphery of the die attach on the first surface of the substrate. A second tier of signal contacts is arranged around the periphery of the die attach area on the first surface of the substrate. A power contact tier is also arranged around the periphery of the die attach area on the first surface of the substrate. The power contact tier is arranged between the first tier of signal contacts and the second tier of signal contacts to reduce signal noise and cross talk between the signal bond wires of the first tier and the second tier.