Abstract: The present invention provides a pressure sensor and a method of manufacturing the same, which can change resistance to load smoothly in a relatively small load range and detect the pressure to the extent of relatively large load range. An uneven layer 6 is formed of a resin containing non-conductive particles 6a and having insulation properties, on a surface of the second substrate 3, and a resistor layer 7 containing at least carbon powder and having a certain film thickness is formed on a surface of the uneven layer 6. A sum of a film thickness of the uneven layer 6 between the non-conductive particles 6a and a film thickness of the resistor layer 7 is smaller than a particle diameter of non-conductive particles 6a included in the uneven layer, and at least a resistor layer 7 is formed on the non-conductive particles 6a and between the non-conductive particles 6a.

Abstract: The present invention provides a pressure sensor and a method of manufacturing the same, which can change resistance to load smoothly in a relatively small load range and detect the pressure to the extent of relatively large load range. An uneven layer 6 is formed of a resin containing non-conductive particles 6a and having insulation properties, on a surface of the second substrate 3, and a resistor layer 7 containing at least carbon powder and having a certain film thickness is formed on a surface of the uneven layer 6. A sum of a film thickness of the uneven layer 6 between the non-conductive particles 6a and a film thickness of the resistor layer 7 is smaller than a particle diameter of non-conductive particles 6a included in the uneven layer, and at least a resistor layer 7 is formed on the non-conductive particles 6a and between the non-conductive particles 6a.