Abstract: A BD-ROM has recorded therein an AV Clip generated by multiplexing a video stream and an interactive graphics stream. The video stream representing a motion picture made of a plurality of pictures, and the interactive graphics stream representing an interactive display to be overlayed on the motion picture, where the interactive graphics stream includes state control information (ICS) stored in a packet and a graphics data sequence (ODS), and the packet includes a time stamp that indicates a time at which the initial display is performed, the time being obtained by adding a predetermined duration to a decode ending time (PTS) of graphics data positioned midway through the graphics data sequence (S-ODSsfirst, S-ODSslast).

Abstract: The invention provides a coating solution for forming a porous film having excellent mechanical strength and dielectric properties and for easily forming a film with a freely controlled film thickness in an ordinarily employed method in semiconductor process. More specifically, provided are a method for preparing a porous-film-forming composition comprising steps of preparing polysiloxane, silica or zeolite particles (Component A), imparting crosslinkability to Component A, and temporarily terminating the crosslinkability; and a porous-film-forming composition obtainable in this method.

Abstract: A semiconductor device has a MIM capacitor including a first insulating film formed on a semiconductor substrate, a lower electrode composed of a first metal film formed on the first insulating film, a capacitor insulating film formed on the lower electrode, and an upper electrode composed of a second metal film formed on the capacitor insulating film. The semiconductor device further has a lower interconnect composed of the first metal film formed on the first insulating film and an upper interconnect composed of the second metal film formed on the lower interconnect. The upper interconnect and the upper electrode are formed integrally.

Abstract: The present invention provides a composition for film formation which can form a porous film that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that is easily thinned; a porous film and a method for forming the same, and a high-performing and highly reliable semiconductor device which contains the porous film inside. More specifically, the composition for forming a porous film comprises a solution containing an amorphous polymer which is obtained by hydrolyzing and condensing at least one silane compound expressed by the general formula (R1)nSi(OR2)4?n, and a zeolite sol which is formed by using a quaternary ammonium hydroxide. The method for forming a porous film comprises a coating step for coating the composition for forming a porous film; a subsequent drying step; and a porousness forming step.

Abstract: An Intelligent, dynamic, long-term digital Surveillance Media storage System (ISMS), proposes an intelligent, dynamic, digital media storage mechanism for digital surveillance applications that can analyze media streams in real-time and provide flexible, scalable, and self-adjustable encoding and indexing mechanisms based on actual needs for digital surveillance systems. The system includes several subsystems, such as: (1) a media stream retriever/receiver; (2) a content-based description generator; (3) an intelligent engine with metadata description storage and media file storage (4) an event manager; (5) a media stream writer; and (6) an encoding optimizer.

Abstract: The present invention provides a solid oxide fuel cell with superior power generation characteristics even at lower temperatures (for example, in a range of 200° C. to 600° C. and preferably in a range of 400° C. to 600° C.) and a method for manufacturing the same. The solid oxide fuel cell is such that the solid oxide fuel cell includes an anode, a cathode, and a first solid oxide held between the anode and the cathode, the anode includes metal particles (2), an anode catalyst (1), and ion conducting bodies (3), the anode catalyst (1) is attached to the surface of the metal particles (2), and the first solid oxide and the ion conducting bodies (3) have either one of an ionic conductivity that is selected from oxide ionic conductivity and hydrogen ionic conductivity.

Abstract: The present invention provides a method of driving a nonvolatile flip-flop circuit comprising the following steps of: a data hold step of holding an input data signal D utilizing polarization of a ferroelectric material of a ferroelectric gate transistor (601) when the data signal D is input while a first clocked inverter (604), a second clocked inverter (603), and a third switching element (602) are turned on and a first switching element (605), a second switching element (607), and a third clocked inverter (608) are turned off; and a data output step of outputting an output signal Q (?Q) based on the held data signal D placing the first clocked inverter (604), the second clocked inverter (603), and the third switching element (602) in the OFF state and placing the first switching element (605), the second switching element (607), and the third clocked inverter (608) in the ON state so as to interrupt an input of a data signal and maintain a polarization state of the ferroelectric material of the ferroelectr

Abstract: A magnetic memory device that includes a magnetoresistive element, a conductive wire for generating magnetic flux that changes a resistance value of the magnetoresistive element, and at least one ferromagnetic member through which the magnetic flux passes. The ferromagnetic member forms a magnetic gap at a position where the magnetic flux passes through the magnetoresistive element. A length of the magnetoresistive element that is measured in a direction parallel to the magnetic gap is less than or equal to twice the length of the magnetic gap. A length of a path traced by the magnetic flux in the ferromagnetic member is less than or equal to 1.0 ?m. The length of the path is also greater than or equal to five times the thickness of the ferromagnetic member and/or is greater than or equal to a length of the ferromagnetic member in the direction of the drawing of the conductive wire divided by five.

Abstract: Methods are provided for improving servo-demodulation robustness. SAM pattern detections are characterized as either good SAM detections or bad SAM detections. Further servo functions are then based on whether the detection of the SAM pattern in a servo wedge was characterized as a good SAM detection or characterized as a bad SAM detection.

Abstract: A network management method for performing communication between any nodes in a network wherein a plurality of nodes are connected, said network management method characterized in that: a connection request having at least a logical node name of the destination of connection is successively propagated to a node having a possibility of active connection with the node of the destination of connection based on information on nodes in the vicinity of that node stored in each node; a route for actively connecting desired nodes is searched for; and the nodes are made to actively connect and communication between the nodes is made to be performed.

Abstract: With keeping an atmosphere including oxygen within a chamber and with a wafer kept at a low temperature, plasma generated within the chamber is biased toward the wafer, and the wafer is subjected to the plasma. A semiconductor layer exposed on the wafer is oxidized into an oxide film. Thus, an oxide film can be formed even at room temperature differently from thermal oxidation. This oxidation is applicable to recovery of an implantation protection insulating film having been etched in cleaning a photoresist film, relaxation of a step formed between polysilicon films, relaxation of a step formed within a trench and the like. Also, before removing a photoresist film used for forming a gate electrode including a metal, a contamination protection film can be formed by this oxidation with the photoresist film kept.

Abstract: A method of producing a hetero-junction bipolar transistor includes: laminating semiconductor layers that are to be a subcollector layer, a collector layer, a base layer, an emitter layer and an emitter cap layer successively on one surface of a semi-insulating substrate; and forming an electrode layer on the emitter cap layer. The method also includes adjusting the shape of the emitter cap layer to be a predetermined shape by wet etching; and removing end portions of the electrode layer so that the edges of the electrode layer are substantially aligned to the edges of the top face of the emitter cap layer. Furthermore, the method includes removing a surface oxidized layer formed on the emitter layer. Thus, defective etching of the emitter layer including an element P of group V is resolved, and a hetero-junction bipolar transistor having predetermined properties can be produced stably.

Abstract: A DC—DC conversion switching power supply is provided, including a plurality of DC—DC converters connected in parallel. A three-times frequency waveform which is generated from a three-times frequency waveform generation circuit, and is in sync with an oscillation frequency of the DC—DC converters is superimposed on a control voltage which is compared with a switching current signal in a current mode control circuit for controlling the DC—DC converters, or a signal proportional to the switching current signal to control a switching current pulse. Since superimposing the three-times frequency waveform which falls over one period increases the control voltage decreased by switch-on noise of the other DC—DC converter, malfunction at a switch-on phase of the other DC—DC converter, caused by the decrease of the control pulse width, is prevented.

Abstract: An information processing method includes the steps of: obtaining, among arithmetic instructions, information on data sets referred to by memory reference, and assigning to different banks a plurality of data sets simultaneously referred to by memory reference performed in accordance with an arithmetic instruction. This allows bank assignment to be performed automatically without causing memory bank conflict.

Abstract: A flow rate measurement apparatus includes: a plurality of flow paths 13 provided between an inflow port 11 and an outflow port 12; opening/closing sections 14 for opening/closing the plurality of flow paths 13; measurement sections 15 for measuring a flow rate of fluid flowing through at least one of the plurality of flow paths 13; and a control section 17 for controlling the opening/closing sections 14 and the measurement sections 15; The control section 17 includes a gain adjustment section 16 for correcting a gain of the measurement section 15 in a flow path which is closed by the opening/closing section 14.

Abstract: A receiving apparatus that sequentially receives and accumulates a plurality of broadcast contents into a storage medium deletes each content accumulated in the storage medium after a predetermined time period as the capacity of the storage medium is limited. The receiving apparatus is connected to at least one external device, and accepts a user designation of a content to be stored and of an external device into which the content is to be stored. The receiving apparatus schedules the transfer of the content in the available time period of the external device, and transfers the content to the external device if the device is not busy at the scheduled time.

Abstract: In order to improve the robustness against electrostatic discharge, when power source terminal and ground terminal are open, of a semiconductor device having a first, a second and a third inverter that are connected in a cascade arrangement, the semiconductor device is provided not only with a first input protection circuit for guiding positive electrostatic discharges, that are applied from outside to a signal input terminal, to a power source line, and a second input protection circuit for guiding negative electrostatic discharges, that are applied from outside to the signal input terminal, to a ground line, but also an internal protection circuit for guiding electrostatic discharges that have been guided by the first input protection circuit to the power source line and flow from a P-channel MOS transistor in the second inverter towards the third inverter, to the ground line.

Abstract: In a color cathode-ray tube with a shadow mask stretched and held by supporters while being provided with a tensile force, a member with a substantially L-shaped cross-section is used for each of the supporters, which is obtained by forming of a strip plate material having a middle part and thinner thickness-deviation portions on both sides of the middle part by rolling of a metal material; and then bending and deforming of the strip plate material in its width direction by roll forming to form a bent and deformed portion in the middle part. The supporter obtained by such a method can be reduced in weight while maintaining substantially the same strength as that of a conventional product, can be processed economically in relatively simple steps, and has less thickness variation. Therefore, an inexpensive color cathode-ray tube having stable qualities and causing less color unevenness can be provided.

Abstract: A nonvolatile semiconductor memory device includes memory cell, charge buildup damage reducer and damage reducer controller. The memory cell includes floating and control gates formed over a semiconductor substrate. The damage reducer is connected to the control gate. The controller is connected to the damage reducer. The damage reducer controls a potential level at the control gate so that the potential level falls within a predetermined voltage range even if charge buildup occurs in the control gate during a metallization process. And the controller allows no current to flow through the damage reducer while the memory cell is being written, read or erased.

Abstract: A digital motion picture decoding apparatus comprising an input buffer memory for storing coded data to be decoded, a reproduced picture memory for storing the decoded picture data to be displayed, and a display picture deciding means for deciding a reproduced picture to be output from the picture data stored in the reproduced picture memory, further comprises: a program changing means for changing the type of the coded data to be decoded; a program change detecting means for detecting from the output of the program changing means that the type of the coded data to be decoded is changed; and a display state maintaining means for controlling the picture data output from the reproduced picture memory so as to maintain the display state of the reproduced picture which is currently displayed according to the decision of the display picture deciding means, when it is detected from the output of the program change detecting means that the change of the type of the coded data to be decoded makes the coded data not c