Abstract: Methods for producing silicon tetrafluoride by acid digestion of fluoride salts of alkali metal or alkaline earth metal and aluminum, optionally, in the presence of a source of silicon; methods for producing silane that include acid digestion of by-products of silane production to produce silicon tetrafluoride.
Abstract: Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed.
Type:
Grant
Filed:
November 18, 2011
Date of Patent:
September 3, 2013
Assignee:
MEMC Electronic Materials, Inc.
Inventors:
Steven L. Kimbel, Harold W. Korb, Richard J. Phillips, Shailendra B. Rathod
Abstract: Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations.
Abstract: Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations.
Type:
Grant
Filed:
October 5, 2010
Date of Patent:
September 3, 2013
Assignee:
MEMC Electronic Materials, Inc.
Inventors:
Zhihui Gu, Timothy D. Truong, Puneet Gupta
Abstract: Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations.
Type:
Grant
Filed:
October 5, 2010
Date of Patent:
September 3, 2013
Assignee:
MEMC Electronic Materials, Inc.
Inventors:
Zhihui Gu, Timothy D. Truong, Puneet Gupta
Abstract: A heat exchanger for vaporizing a liquid and a method of using the same are disclosed. The heat exchanger includes a housing, a tube, a heater, and a plurality of non-reactive members. The tube is disposed in the interior of the housing and has an inlet and an outlet. The heater is configured to heat the tube. The plurality of non-reactive members are disposed in an interior cavity of the tube in an arrangement such that a plurality of voids are defined between the members and the tube. The arrangement also permits liquid to pass through the voids and travel from the inlet of the tube to the outlet of tube. The plurality of non-reactive members and the tube transfer heat to the liquid as the liquid passes through the plurality of voids in order to vaporize the liquid.
Abstract: Methods and systems for use in detecting an air pocket in a single crystal material are described. One example method includes providing a matrix including a plurality of data units, the plurality of data units including image data related to a region of interest of the single crystal material; defining a first half and a second half of the matrix based on a first axis passing through the center of the matrix; determining, by a processor, a difference between each data unit of the first half and a corresponding data unit of the second half; calculating, by the processor, a first index value based on the determined differences; and identifying an air pocket within the single crystal material based on the first index value and a predetermined threshold.
Abstract: Methods are disclosed for determining mounting locations of ingots on a wire saw machine. The methods include measuring a test surface of a test wafer previously sliced by the wire saw machine from a test ingot to calibrate the system. A magnitude and a direction of an irregularity of the measured test surface of the test wafer is then determined. The mounting location is then determined for another ingot to be mounted on the ingot holder based on at least one of the magnitude and direction of the irregularity of the measured test surface of the test wafer.
Abstract: Processes and systems for purifying silane-containing streams and, in particular, for purifying silane-containing streams that also contain ethylene are disclosed. The processes and systems may be arranged such that one or more ethylene reactors are downstream of light-end distillation operations.
Abstract: Methods and systems for use in detecting an air pocket in a single crystal material are described. One example method includes providing a matrix including a plurality of data units, the plurality of data units including image data related to a region of interest of the single crystal material; determining, by a processor, a difference between data units of the matrix and a corresponding data unit of the matrix, wherein the corresponding data unit is defined by a first operation of the matrix; calculating, by the processor, a first index value based on the differences of the corresponding data units; and identifying an air pocket within the single crystal material based on the first index value and a predetermined threshold.
Abstract: Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed.
Abstract: Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed.
Abstract: This invention generally relates to a process for making a multi-layered crystalline structure. The process includes implanting ions into a donor structure, bonding the implanted donor structure to a second structure to form a bonded structure, cleaving the bonded structure, and removing any residual portion of the donor structure from the finished multi-layered crystalline structure.
Abstract: An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.
Abstract: A method is disclosed for determining metal content in a container of water. The method includes contacting a substrate with the water for a predetermined period of time. The substrate is then dried and analyzed to determine the metal content of the substrate surface. A determination is then made of the metal content in the water from the metal content on the substrate surface.
Abstract: Methods for producing aluminum trifluoride by acid digestion of fluoride salts of alkali metal or alkaline earth metal and aluminum, optionally, in the presence of a source of silicon; methods for producing silane that include acid digestion of by-products of silane production to produce aluminum trifluoride.
Abstract: Systems and methods are provided for determining the size of particles within a fluidized bed reactor. The pressure of gas adjacent a gas inlet and adjacent a gas outlet of the reactor are measured with pressure sensors. An algorithm is applied to at least one of the pressure measurements to determine the size of particles within the reactor. The determined size of the particles can be used to control the operation of the reactor. A dosing system and method is provided for measuring defined volumes of particles for transport to the reactor.
Type:
Grant
Filed:
December 29, 2010
Date of Patent:
May 28, 2013
Assignee:
MEMC Electronic Materials, Inc.
Inventors:
Satish Bhusarapu, Arif Nawaz, Puneet Gupta, Karthik Balakrishnan
Abstract: Production of polycrystalline silicon in a substantially closed-loop process is disclosed. The processes generally include decomposition of trichlorosilane produced from metallurgical grade silicon.
Abstract: Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed.
Type:
Application
Filed:
November 18, 2011
Publication date:
May 23, 2013
Applicant:
MEMC ELECTRONIC MATERIALS, INC.
Inventors:
Steven L. Kimbel, Harold W. Korb, Richard J. Phillips, Shailendra B. Rathod
Abstract: Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed.
Type:
Application
Filed:
November 18, 2011
Publication date:
May 23, 2013
Applicant:
MEMC ELECTRONIC MATERIALS, INC.
Inventors:
Steven L. Kimbel, Harold W. Korb, Richard J. Phillips, Shailendra B. Rathod