Abstract: Multilayer structure, used especially as a material of high relative permittivity, characterized in that it comprises a plurality of separate layers, each having a thickness of less than 500 Å. Some of those layers are based on aluminium, hafnium and oxygen and especially based on hafnium dioxide (HfO2) and on alumina (Al2O3). In practice, the hafnium dioxide and alumina layers form alloys of formula HfxAlyOz. Advantageously, the stoichiometry of the HfxAlyOz varies from one layer to another. Some of the layers containing HfxAlyOz alloys, or some of the layers between those containing HfxAlyOz alloys, also include a lanthanide element.
Type:
Application
Filed:
April 29, 2003
Publication date:
November 6, 2003
Applicant:
MEMSCAP Le Parc Technologique des Fountaines
Abstract: MEMS optical switches can include a substrate having first and second opposing faces and at least one side therebetween. An input is obliquely angled towards the face and optically couples optical radiation towards the face. A movable reflector is on the face and moves from a first position to a second position that is parallel to the first position to reflect the optical radiation from the input to provide reflected optical radiation. A output is obliquely angled away from the face and optically couples the reflected optical radiation away from the face.
Abstract: A microelectromechanical (MEMS) device is provided that includes a microelectronic substrate, a microactuator disposed on the substrate and formed of a single crystalline material, and at least one metallic structure disposed on the substrate adjacent the microactuator While the MEMS device can include various microactuators, one embodiment of the microactuator is a thermally actuated microactuator that may include a pair of spaced apart supports disposed on the substrate and at least one arched beam extending therebetween. Thus, on actuation, the microactuator moves between a first position in which the microactuator is spaced apart from the at least one metallic structure to a second position in which the microactuator operably engages the at least one metallic structure.
Abstract: An electronic component produced from a substrate and incorporating a capacitive structure formed on top of the final visible metallization level produced in the substrate, said capacitive structure having two electrodes, wherein one of the electrodes comprises an array of superposed fins that are offset from one another with respect to a central trunk, the other electrode comprising two arrays of fins, the fins of each of the latter arrays being interleaved with the fins of the first electrode and being joined together by a common wall, the two common walls themselves being joined together above the first electrode.
Type:
Application
Filed:
February 25, 2003
Publication date:
August 28, 2003
Applicant:
MEMSCAP Le Parc Technologique des Fontaines
Abstract: Multilayer structure, used especially as a material of high relative permittivity, characterized in that it comprises a plurality of separate layers, each having a thickness of less than 500 Å, and some of which are based on aluminium, hafnium and oxygen and especially based on hafnium dioxide (HfO2) and on alumina (Al2O3). In practice, the hafnium dioxide and alumina layers form alloys of formula HfxAlyOz. Advantageously, the stoichiometry of the HfxAlyOz varies from one layer to another.
Abstract: MEMS structures are provided that compensate for ambient temperature changes, process variations, and the like, and can be employed in many applications. These structures include an active microactuator adapted for thermal actuation to move in response to the active alteration of its temperature. The active microactuator may be further adapted to move in response to ambient temperature changes. These structures also include a temperature compensation element, such as a temperature compensation microactuator or frame, adapted to move in response to ambient temperature changes. The active microactuator and the temperature compensation element move cooperatively in response to ambient temperature changes. Thus, a predefined spatial relationship is maintained between the active microactuator and the associated temperature compensation microactuator over a broad range of ambient temperatures absent active alteration of the temperature of the active microactuator.
Type:
Grant
Filed:
March 15, 2001
Date of Patent:
July 22, 2003
Assignee:
Memscap S.A.
Inventors:
Edward Hill, Robert L. Wood, Ramaswamy Mahadevan
Abstract: Multilayer structure, used especially as a material of high relative permittivity, characterized in that it comprises a plurality of superposed elementary layers, each with a thickness of less than about 500 Å, among which there are two layers based on an alloy of titanium dioxide (TiO2) and tantalum pentoxide (Ta2O5), these layers being separated by an interlayer of an alloy based on at least hafnium dioxide (HfO2) an alumina (Al2O3).
Type:
Application
Filed:
December 24, 2002
Publication date:
July 10, 2003
Applicant:
MEMSCAP Le Parc Technologique des Fontaines
Abstract: A MEMs microactuator can be positioned in an interior region of a frame having at least one opening therein, wherein the frame expands in response to a change in temperature of the frame. A load outside the frame can be coupled to the microactuator through the at least one opening. The microactuator moves relative to the frame in response to the change in temperature to remain substantially stationary relative to the substrate. Other MEMs structures, such as latches that can engage and hold the load in position, can be located outside the frame. Accordingly, in comparison to some conventional structures, temperature compensated microactuators according to the present invention can be made more compact by having the interior region of the frame free of other MEMs structures such as latches.
Type:
Grant
Filed:
September 26, 2001
Date of Patent:
July 8, 2003
Assignee:
Memscap S.A.
Inventors:
Vivek Agrawal, Robert L. Wood, Ramaswamy Mahadevan
Abstract: Electronic component incorporating an integrated circuit made in a substrate (1) and a planar capacitor, characterized in that the capacitor is made on top of a metallization plane of the component, this metallization plane forming a first electrode (2) of the capacitor, and in that the capacitor comprises:
Abstract: The invention relates to a process for fabricating electronic components, incorporating an inductive microcomponent placed on top of a substrate.
Type:
Application
Filed:
November 25, 2002
Publication date:
June 12, 2003
Applicant:
MEMSCAP (Societe Anonyme) Parc Technologique des Fontaines Bernin
Abstract: The invention relates to a process for fabricating electronic components incorporating an inductive microcomponent placed on top of a substrate.
Abstract: The invention relates to a process for fabricating electronic components incorporating an inductive microcomponent placed on top of a substrate.
Abstract: An elementary electrical resonator which includes a ribbon conductor forming a flat loop with at least one turn, the conductor having ends which form two parallel segments. The resonator further includes a conducting bridge which forms an arch straddling the two parallel segments of the ribbon conductor wherein opposing surfaces of the arch and the parallel segments form a capacitor. A part of the bridge is capable of being displaced with respect to the parallel segments under the action of a control signal so as to cause the capacitance of the capacitor and therefore the tuning frequency of the resonator to vary.
Abstract: A monolithic integrated circuit (1) incorporating an inductive component (2) and comprising:
a semiconductor substrate layer (2);
a passivation layer (4) covering the substrate layer (2);
metal contact pads (5) connected to the substrate (2) and passing through the passivation layer (4) in order to be flush with the upper face (6) of the passivation layer (4);
which circuit also includes a spiral winding (20) which forms an inductor and lies in a plane parallel to the upper face (6) of the passivation layer (4), said winding (20) consisting of copper turns (21-23, 27, 28) having a thickness of greater than 10 microns, the winding ends forming extensions (12) which extend below the plane of the winding (20) and are connected to the contact pads (5).
Type:
Grant
Filed:
June 21, 2002
Date of Patent:
April 15, 2003
Assignee:
Memscap S.A. and Planhead-Silmag PHS, S.A.
Inventors:
Laurent Basteres, Ahmed Mhani, François Valentin, Jean-Michel Karam
Abstract: Inductive microcomponent (1), such as a microinductor or microtransformer, comprising a metal winding (2) having the shape of a solenoid, and a magnetic core (4) including a strip made of a ferromagnetic material, positioned at the center of the solenoid (2), and characterized in that the core comprises at least one additional strip made of a ferromagnetic material (13), separated from the other strip (12) by a spacer layer (14) made of a non-magnetic material, the thickness of which is such that the strips (12, 13) located on either side of the spacer layer (14) are antiferromagnetically coupled.
Abstract: Inductive microcomponent (1), such as a microinductor or microtransformer, comprising a metal winding (2) having the shape of a solenoid and a magnetic core (4) made of a ferromagnetic material positioned at the center of the solenoid (2), wherein the core (4) consists of several sections (13-16) separated by cutouts (17-19) oriented parallel to the main axis (20) of the solenoid (4).
Abstract: Microelectromechanical component (1) providing filtering functions, produced on a semiconductor-based substrate, and comprising two input terminals and two output terminals, characterized in that it also comprises:
Abstract: A microelectromechanical component (1) providing filtering functions, produced on a semiconductor-based substrate (10) and comprising two input terminals (7, 8) and two output terminals (26, 27), which also comprises:
Type:
Application
Filed:
August 6, 2002
Publication date:
February 13, 2003
Applicant:
MEMSCAP Parc Technologique des Fontaines