Patents Assigned to Ministry of International Trade & Industries
  • Publication number: 20010025955
    Abstract: A diamond semiconductor has an exciton light-emission intensity characteristic that varies nonlinearly.
    Type: Application
    Filed: December 8, 2000
    Publication date: October 4, 2001
    Applicant: AGENCY OF INDUSTRIAL SCIENCE & TECHNOLOGY, MINISTRY OF INTERNATIONAL TRADE & INDUSTRY
    Inventors: Hideyo Okushi, Hideyuki Watanabe, Daisuke Takeuchi, Koji Kajimura
  • Patent number: 6284314
    Abstract: A porous ceramic film having micropores of uniform diameter is formed on a substrate by depositing on the substrate a layer of a ceramic sol containing polyethylene glycol or polyethylene oxide and then heating the substrate. This porous ceramic film is used as a catalyst or catalyst support. When the ceramic of this film is titanium oxide, the film is particularly useful as a photocatalyst for the decomposition of harmful and malodorous substances.
    Type: Grant
    Filed: December 8, 1994
    Date of Patent: September 4, 2001
    Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Kazumi Kato, Hiroshi Taoda
  • Patent number: 6281171
    Abstract: A Mg-doped high-temperature superconductor having low superconducting anisotropy includes a two-dimensional layered structure constituted by a charge reservoir layer and a superconducting layer, wherein some or all atoms constituting the charge reservoir layer are Cu and O atoms, metallizing or rendering the charge reservoir layer superconducting, a portion of the Ca of the CunCan−1O2n constituting the superconducting layer is replaced by Mg, increasing superconductive coupling between CuO2 layers, a thickness of the superconducting layer is increased, and therefore coherence length in a thickness direction is increased based on the uncertainty principle, lowering superconducting anisotropy.
    Type: Grant
    Filed: March 16, 1999
    Date of Patent: August 28, 2001
    Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Hideo Ihara, Shyam Kishore Agarwal
  • Patent number: 6281036
    Abstract: A method of fabricating Cu&agr;(InxGa1−x)&bgr;(SeyS1−y)&ggr; films for solar cells includes forming an electrode on a substrate and supplying the substrate and electrode with Cu, In, Ga, Se, and S to form a Cu&agr;(InxGa1−x)&bgr;(SeyS1−y)&ggr; film. Simultaneously with the supplying of Cu, In, Ga, Se and S, the substrate is supplied with water vapor or a gas that contains a hydroxyl group.
    Type: Grant
    Filed: October 8, 1999
    Date of Patent: August 28, 2001
    Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Shigeru Niki, Akimasa Yamada, Paul Fons, Hiroyuki Oyanagi
  • Patent number: 6280802
    Abstract: A method of forming a film of ultrafine particles includes the steps of accelerating ultrafine particles within a vacuum chamber to cause them to collide with a substrate and be deposited, and, at least before said ultrafine particles collide with said substrate, irradiating the ultrafine particles and the substrate with an ionic, atomic or molecular beam or low-temperature plasma or other high-speed, high-energy beam of high-energy atoms or molecules, whereby the surfaces of the ultrafine particles and substrate are activated without being fused, thus promoting bonding between said ultrafine particles and substrate or between the ultrafine particles to form a dense deposit that has good film properties and good adhesion to the substrate while maintaining the crystal properties of the ultrafine particles.
    Type: Grant
    Filed: July 26, 1999
    Date of Patent: August 28, 2001
    Assignee: Agency of Industrial Science and Technology Ministry of International Trade and Industry
    Inventors: Jun Akedo, Hideki Takagi
  • Publication number: 20010009460
    Abstract: An angle compensation method compensates for the angle of the light-receiving surface of a photodiode disposed in an inclination detection device. The light-receiving surface is divided into four parts by an a-axis and a b-axis disposed perpendicular to each other and receives light reflected from an object surface that is an X-Y plane. The inclination detection device seeks the inclination of the object surface from changes in the irradiation position of the light reflected onto the photodiode light-receiving surface.
    Type: Application
    Filed: December 29, 2000
    Publication date: July 26, 2001
    Applicant: AGENCY OF INDUSTRIAL SCIENCE & TECHNOLOGY, MINISTRY OF INTERNATIONAL TRADE & INDUSTRY
    Inventors: Satoru Fujisawa, Hisato Ogiso
  • Publication number: 20010008145
    Abstract: A photovoltaic device includes a semiconductor substrate, an n-type diffusion layer region and a p-type diffusion layer region formed adjacent to each other on the light-receiving surface of the semiconductor substrate, a first electrode electrically connected to the n-type diffusion layer region, a second electrode electrically connected to the p-type diffusion layer region, an adhesive layer formed on the opposite surface of the semiconductor substrate and containing an inorganic binder and a filler, and a supporting substrate adhered to the adhesive layer.
    Type: Application
    Filed: December 29, 2000
    Publication date: July 19, 2001
    Applicant: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Hidetaka Takato, Ryuichi Shimokawa
  • Patent number: 6254844
    Abstract: A sintered lithium titaniumphosphate is produced by subjecting the powder of a mixture consisting of a Li source, a Ti source, and a P source to spark plasma sintering under an increased pressure.
    Type: Grant
    Filed: September 30, 1999
    Date of Patent: July 3, 2001
    Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Tomonari Takeuchi, Kazuaki Ado, Mitsuharu Tabuchi, Hiroyuki Kageyama
  • Patent number: 6197942
    Abstract: A chitooligosaccharide residue is disclosed which is represented by the formula: wherein m=1-20, n=1-20, m+n=2-21, and m/n=5-0.05, and R represents a saturated or unsaturated aliphatic acyl group of 3-24 carbon atoms.
    Type: Grant
    Filed: October 29, 1999
    Date of Patent: March 6, 2001
    Assignee: Agency of Industrial Science and Technology Ministry of International Trade and Industry
    Inventor: Einosuke Muraki
  • Patent number: 6193784
    Abstract: A method for the formation of a zeolite membrane, which comprises preparing raw materials (a) and (b) for the synthesis of zeolite, at least one of the raw materials containing water, positioning the raw material (a) for the synthesis of zeolite so as to contact one lateral face of a porous body and the raw material (b) therefor so as to contact the other lateral face of the porous body, causing the two raw materials (a) and (b) to permeate the porous body thereby forming an interface of the two raw material in pores of the porous body, and inducing a reaction of hydrothermal synthesis at the interface, a porous body obtained by the method and having a zeolite membrane formed in the pores thereof, and a membrane used for separation and purification of gas and formed of the porous body.
    Type: Grant
    Filed: June 10, 1999
    Date of Patent: February 27, 2001
    Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Tetsuo Yazawa, Tetsuro Jin, Koji Kuraoka
  • Patent number: 6183552
    Abstract: A crystal growth method for thin films of oxides wherein a vapor-phase deposition method is used to grow crystals for Bi2Sr2CanCun+1O6+2n oxide thin film 304, where n is an integer equal to 1 or greater, includes a first step of growing a Bi2Sr2CuO6 oxide thin film 302 to an arbitrary number of molecular layers by setting a growth environment to conditions in which oxides of bismuth alone are not formed, but intended multi-element oxide is formed, and supplying the growth environment with an excess of bismuth compared with other elements, thereby preventing deficiency of bismuth and also evaporating excess bismuth from the thin film, a second step of causing a layer 303 containing calcium atoms and copper atoms each in the amount of n/2 of the number of strontium atoms contained in the Bi2Sr2CuO6 oxide thin film to accumulate upon the Bi2Sr2CuO6 oxide thin film, and a third step of, in a state in which environmental temperature is set higher than the environmental temperature in the first step, caus
    Type: Grant
    Filed: March 8, 1999
    Date of Patent: February 6, 2001
    Assignee: Agency Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Shigeki Sakai, Shinji Migita
  • Patent number: 6169055
    Abstract: A catalyst for producing acrolein by oxidizing ethane contains silicon, iron, an alkali metal, and oxygen. A method for producing acrolein includes the step of oxidizing ethane in the presence of the catalyst and a method for producing the catalyst includes the steps of mixing porous silicon oxide with an iron compound and an alkali metal compound and calcining the resultant mixture.
    Type: Grant
    Filed: December 2, 1998
    Date of Patent: January 2, 2001
    Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Yonghong Teng, Tetsuhiko Kobayashi, Atsushi Ueda
  • Patent number: 6169288
    Abstract: A laser ablation type ion source including vacuum chambers provided with a retaining section for holding a solid raw material for the generation of ions, an ion extracting electrode, an ion accelerating electrode, and a mass spectrograph for ion separation. The ion source also includes a laser beam source for injecting a laser beam of high density into the vacuum chamber.
    Type: Grant
    Filed: September 24, 1998
    Date of Patent: January 2, 2001
    Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Yuji Horino, Toshiyuki Mihara, Akiyoshi Chayahara, Atsushi Kinomura, Nobuteru Tsubouchi
  • Patent number: 6166947
    Abstract: A manganese oxide material has MnO.sub.3 as a matrix. It is an antiferromagnetic insulator and, when subjected to an electrical current or electric field, it is transformed into a ferromagnetic metal.
    Type: Grant
    Filed: June 18, 1999
    Date of Patent: December 26, 2000
    Assignees: Agency of Industrial Science and Technology Ministry of International Trade & Industry, Angstrom Technology Partnership, Sanyo Electric Co., Ltd.
    Inventors: Atsushi Asamitsu, Yasuhide Tomioka, Hideki Kuwahara, Yoshinori Tokura
  • Patent number: 6136457
    Abstract: A manganese oxide material that can be used as a switching device or as a memory device or the like is formed of Mn-based oxide material. The Mn-based oxide material exhibits insulator-to-metal transitions induced by irradiating the material with laser light.
    Type: Grant
    Filed: March 16, 1998
    Date of Patent: October 24, 2000
    Assignees: Agency of Industrial Science and Technology Ministry of International Trade and Industry, Angstrom Technology Partnership
    Inventors: Kenjiro Miyano, Takehito Tanaka, Yoshinori Tokura, Yasuhide Tomioka
  • Patent number: 6137395
    Abstract: A magnetoresistor with an ordered double perovskite structure is an oxide crystal which has an ordered double perovskite crystal structure represented by the general formula of A.sub.2 BB'O.sub.6, wherein A stands for Sr atoms, B for Fe atoms and B' for Mo or Re atoms and wherein the Fe atoms and the Mo or Re atoms are alternately arranged and which exhibits negative magnetoresistive characteristics.
    Type: Grant
    Filed: March 26, 1999
    Date of Patent: October 24, 2000
    Assignees: Agency of Industrial Science and Technology, Ministry of International Trade and Industry, Mitsubishi Electric Corporation, Angstrom Technology Partnership
    Inventors: Keiichiro Kobayashi, Yoshinori Tokura, Tsuyoshi Kimura, Yasuhide Tomioka
  • Patent number: 6132524
    Abstract: A semiconductor magneto-optical material includes a semiconductor dispersed with fine magnetic material particles and is characterized by exhibiting magneto-optical effect at ordinary room temperature.
    Type: Grant
    Filed: January 15, 1998
    Date of Patent: October 17, 2000
    Assignees: Agency of Industrial Science & Technology, Ministry of International Trade & Industry, Tokin Corporation
    Inventors: Hiroyuki Akinaga, Koichi Onodera
  • Patent number: 6132816
    Abstract: A method for producing homoepitaxial diamond thin film is provided which includes a step of effecting plasma assisted CVD with the carbon source concentration of a mixed gas of a carbon source and hydrogen set to a first low level for depositing a high-quality homoepitaxial diamond thin film on a substrate at a low film forming rate and a step of thereafter effecting the plasma assisted CVD with said carbon source concentration set to a second level higher than the first level.
    Type: Grant
    Filed: October 21, 1998
    Date of Patent: October 17, 2000
    Assignee: Agency of Industrial Science & Technology, Ministry of International Trade and Industry
    Inventors: Daisuke Takeuchi, Hideyo Okushi, Koji Kajimura, Hideyuki Watanabe
  • Patent number: 6117595
    Abstract: A high sodium ion conducting inorganic composite solid electrolyte obtained by mixing Na.sub.4 Zr.sub.2 Si.sub.3 O.sub.12 with titanium oxide and sintering the resultant mixture and a method for the production of a high sodium ion conducting inorganic composite solid electrolyte, consisting essentially of the steps of mixing Na.sub.4 Zr.sub.2 Si.sub.3 O.sub.12 with titanium oxide and sintering the resultant mixture.
    Type: Grant
    Filed: February 4, 1998
    Date of Patent: September 12, 2000
    Assignee: Agency of Industrial Science & Technology and Ministry of International Trade & Industry
    Inventors: Tomonari Takeuchi, Elisabeth Betourne, Mitsuharu Tabuchi, Osamu Nakamura, Hiroyuki Kageyama
  • Patent number: 6112806
    Abstract: A heat exchanger which uses a drag reduction fluid as one of its two heat transfer media has a heat transfer plate formed with irregularities.
    Type: Grant
    Filed: October 17, 1995
    Date of Patent: September 5, 2000
    Assignee: Agency of Industrial Scienceand Technology Ministry of International Trade & Industry
    Inventors: Yasuo Kawaguchi, Akira Yabe