Abstract: A buried-ridge or buried-heterostructure II-VI laser diode. Polycrystalline II-VI semiconductor such as ZnS, ZnSSe, ZnSe or CdS deposited by vacuum evaporation buries the etched ridge.
Type:
Grant
Filed:
February 12, 1993
Date of Patent:
April 4, 1995
Assignee:
Minnesota Mining & Manufacturing Compay
Inventors:
Michael A. Haase, Jun Qiu, Hwa Cheng, James M. DePuydt