Patents Assigned to Murato Manufacturing Co., Ltd.
  • Patent number: 9755606
    Abstract: On a first-signal-line side, a first resonant circuit is defined by a first inductance element, a first capacitance element, a second capacitance element, a third inductance element and a fifth inductance element, a third resonant circuit is defined by the first inductance element, the first capacitance element and the second capacitance element, and a fifth resonant circuit is defined by the first inductance element, the third inductance element, the first capacitance element, the second capacitance element and the fifth capacitance element. Similarly, on a second-signal-line side, a second resonant circuit, a fourth resonant circuit and a sixth resonant circuit are provided.
    Type: Grant
    Filed: January 21, 2016
    Date of Patent: September 5, 2017
    Assignee: Murato Manufacturing Co., Ltd.
    Inventors: Noriyuki Ueki, Hisashi Akiyama
  • Patent number: 9332644
    Abstract: A high-frequency transmission line includes a laminate including dielectric layers, a first signal line provided in the laminate, a second signal line provided in the laminate and positioned on a first side in a direction of lamination relative to the first signal line, so as to cross the first signal line when viewed in a plan view in the direction of lamination, a first ground conductor positioned on a second side in the direction of lamination relative to the first signal line, a second ground conductor positioned on the first side in the direction of lamination relative to the second signal line, and an intermediate ground conductor provided between the first and second signal lines in the direction of lamination, so as to overlap with crossing portions of the first and second lines when viewed in a plan view in the direction of lamination.
    Type: Grant
    Filed: June 16, 2014
    Date of Patent: May 3, 2016
    Assignee: Murato Manufacturing Co., Ltd.
    Inventors: Noboru Kato, Masahiro Ozawa
  • Patent number: 9305707
    Abstract: In a ceramic electronic component, a first internal electrode includes a first opposed section and a first extraction section. The first opposed section is opposed to a second internal electrode with a ceramic layer interposed therebetween. The first extraction section is located closer to a first end surface than the first opposed section. The first extraction section is connected to a first external electrode. The number of cross-linked sections per unit area in the first extraction section is less than the number of cross-linked sections per unit area in the first opposed section.
    Type: Grant
    Filed: June 11, 2013
    Date of Patent: April 5, 2016
    Assignee: Murato Manufacturing Co., Ltd.
    Inventors: Takashi Hiramatsu, Kunihiko Hamada
  • Patent number: 9246553
    Abstract: A power reception device and a power transmission device which are capable of suppressing an adverse effect of an electric field. A power reception device includes a capacitive coupling electrode comprising a high voltage side conductor and a low voltage side conductor extending around the high voltage side conductor. The high voltage side conductor is disposed on a surface of a housing. The low voltage side conductor is disposed inside a circuit board. A plurality of module parts are mounted on a surface of the circuit board which is located on an opposite side away from the high voltage side conductor with respect to the low voltage side conductor.
    Type: Grant
    Filed: July 25, 2012
    Date of Patent: January 26, 2016
    Assignee: MURATO MANUFACTURING CO., LTD.
    Inventors: Keiichi Ichikawa, Henri Bondar
  • Patent number: 9064990
    Abstract: An ultraviolet sensor has a p-type semiconductor layer composed of a solid solution of NiO and ZnO, and an n-type semiconductor layer composed of ZnO and joined to the p-type semiconductor layer such that a part of the surface of the p-type semiconductor layer is exposed. In the p-type semiconductor layer, trivalent Ni is contained in a crystal grain in a state of being solid-solved with the solid solution of NiO and ZnO. The trivalent Ni can be contained in the crystal grain of the p-type semiconductor layer by adding NiOOH to NiO and ZnO, and firing the resulting mixture. Thereby, an inexpensive ultraviolet sensor capable of being downsized, which can easily detect the intensity of ultraviolet light by a photovoltaic power without utilizing a peripheral circuit can be realized.
    Type: Grant
    Filed: December 6, 2012
    Date of Patent: June 23, 2015
    Assignee: MURATO MANUFACTURING CO., LTD.
    Inventor: Kazutaka Nakamura
  • Patent number: 8945240
    Abstract: A solid electrolytic capacitor element having a solid electrolyte layer provided on a dielectric layer formed on a surface of an anode body comprising a valve acting metal including a pore, wherein the anode body is configured in such a way that multiple plate-shaped anode bodies are directly piled and integrated with a solid electrolyte, and adjacent piled anode bodies are joined at a section thereof, and a method for producing the solid electrolytic capacitor element.
    Type: Grant
    Filed: December 6, 2013
    Date of Patent: February 3, 2015
    Assignee: Murato Manufacturing Co., Ltd.
    Inventors: Yoshihiro Saida, Masaaki Nishioka
  • Patent number: 8420209
    Abstract: In order to enable non-shrinkage firing, the strength of a multilayer ceramic substrate is increased by a method including alternately stacking a base material layer and a constrained layer which is not sintered at the sintering temperature for the base material layer, and allowing the material of the base material layer to flow into the constrained layer while subjecting the base material layer to sintering, thereby achieving densification of the constrained layer. The base material layer and the constrained layer each include celsian, and less celsian is provided in the base material layer than in the constrained layer. In order to increase the strength of the base material layer, the addition of a Ti component, rather than an increased content of Al component which interferes with sintering of the base material layer, causes fresnoite to be deposited in the base material layers.
    Type: Grant
    Filed: July 1, 2011
    Date of Patent: April 16, 2013
    Assignee: Murato Manufacturing Co., Ltd.
    Inventors: Machiko Motoya, Takahiro Sumi