Patents Assigned to Nanoteco Corporation
  • Patent number: 7041529
    Abstract: In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.
    Type: Grant
    Filed: October 22, 2003
    Date of Patent: May 9, 2006
    Assignees: Shin-Etsu Handotai Co., Ltd., Nanoteco Corporation
    Inventors: Masato Yamada, Jun-ya Ishizaki, Nobuhiko Noto, Kazunori Hagimoto, Shinji Nozaki, Kazuo Uchida, Hiroshi Morisaki
  • Patent number: 6995401
    Abstract: A light emitting device having an oxide transparent electrode layer as an emission drive electrode, and designed so that damage possibly occurs during bonding of electrode wires to the bonding pads is less influential to a light emitting layer portion is disclosed. The light emitting device has the light emitting layer portion composed of a compound semiconductor and has a double heterostructure in which a first-conductivity-type cladding layer, an active layer and a second-conductivity-type cladding layer are stacked in this order; and the light emitting layer portion is applied with emission drive voltage through an oxide transparent electrode layer formed so as to cover the main surface of the second-conductivity-type cladding layer. A bonding pad composed of a metal is disposed on the oxide transparent electrode layer, and to the bonding pad an electrode wire for current supply is bonded.
    Type: Grant
    Filed: October 22, 2003
    Date of Patent: February 7, 2006
    Assignees: Shin-Etsu Handotai Co., Ltd., Nanoteco Corporation
    Inventors: Masato Yamada, Nobuhiko Noto, Masanobu Takahashi, Kingo Suzuki, Shinji Nozaki, Kazuo Uchida, Hiroshi Morisaki
  • Publication number: 20050285127
    Abstract: A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24, and is designed so as to extract light from the light-emitting layer section 24 through the ITO transparent electrode layers 8, 10. The light-emitting device 100 also has contact layers composed of In-containing GaAs, formed between the light-emitting layer section 24 and the ITO transparent electrode layers 8, 10, so as to contact with the ITO transparent electrode layers respectively. The contact layers 7, 9 are formed by annealing a stack 13 obtained by forming GaAs layers 7?, 9? on the light-emitting layer section, and by forming the ITO transparent electrode layers 8, 10 so as to contact with the GaAs layers 7?, 9?, to thereby allow In to diffuse from the ITO transparent electrode layers 8, 10 into the GaAs layers 7?, 9?.
    Type: Application
    Filed: August 6, 2003
    Publication date: December 29, 2005
    Applicants: Shin-Etsu Handotai Co., Ltd., Nanoteco Corporation
    Inventors: Nobuhiko Noto, Masato Yamada, Shinji Nozaki, Kazuo Uchida, Hiroshi Morisaki
  • Patent number: 6847056
    Abstract: A light emitting device 100 has a structure in which a p type InGaAs layer 7 as an electrode contact layer and an ITO electrode layer 8 as an oxide transparent electrode layer are formed in the order in a first major surface 17 side of a light emitting layer section 24. In a second major surface 18 side of the light emitting layer section 24, an n type InGaAs layer 9 as an electrode contact layer and an ITO electrode layer 10 as an oxide transparent electrode layer are formed in the order. The ITO electrode layers 8 and 10 together with the p type InGaAs layer 7 and the n type InGaAs layer 9 are formed on the respective both major surfaces 17 and 18 of the light emitting layer section 24 so as to cover the respective both major surfaces 17 and 18 in the entirety thereof.
    Type: Grant
    Filed: January 29, 2002
    Date of Patent: January 25, 2005
    Assignees: Shin-Etsu Handotai Co., Ltd., Nanoteco Corporation
    Inventors: Nobuhiko Noto, Masato Yamada, Masahisa Endo, Hitoshi Ikeda, Shinji Nozaki, Kazuo Uchida, Hiroshi Morisaki
  • Publication number: 20040206961
    Abstract: A light emitting device having an oxide transparent electrode layer as an emission drive electrode, and designed so that damage possibly occurs during bonding of electrode wires to the bonding pads is less influential to a light emitting layer portion is disclosed. The light emitting device has the light emitting layer portion composed of a compound semiconductor and has a double heterostructure in which a first-conductivity-type cladding layer, an active layer and a second-conductivity-type cladding layer are stacked in this order; and the light emitting layer portion is applied with emission drive voltage through an oxide transparent electrode layer formed so as to cover the main surface of the second-conductivity-type cladding layer. A bonding pad composed of a metal is disposed on the oxide transparent electrode layer, and to the bonding pad an electrode wire for current supply is bonded.
    Type: Application
    Filed: October 22, 2003
    Publication date: October 21, 2004
    Applicants: Shin-Etsu Handotai Co., Ltd., Nanoteco Corporation
    Inventors: Masato Yamada, Nobuhiko Noto, Masanobu Takahashi, Kingo Suzuki, Shinji Nozaki, Kazuo Uchida, Hiroshi Morisaki
  • Patent number: 6787383
    Abstract: The light-emitting device 100 has an ITO electrode layer 8 for applying drive voltage for light emission to a light emitting layer section 24, where the light from the light emitting layer section 24 is extracted as being passed through the ITO electrode layer 8. Between the light emitting layer section 24 and the ITO electrode layer 8, an electrode contact layer 7 composed of In-containing GaAs is located so as to contact with such ITO electrode layer 8, where occupied areas and unoccupied areas for the electrode contact layer 7 are arranged in a mixed manner on the contact interface with the transparent electrode layer 8. The electrode contact layer 7 can be obtained by annealing a stack 13, which comprises a GaAs layer 7″ formed on the light emitting layer section 24 and the ITO electrode layer 8 formed so as to contact with the GaAs layer 7″, to thereby allow In to diffuse from the ITO electrode layer to the GaAs layer 7″.
    Type: Grant
    Filed: September 26, 2002
    Date of Patent: September 7, 2004
    Assignees: Shin-Etsu Hanotai Co., Ltd., Nanoteco Corporation
    Inventors: Shunichi Ikeda, Masato Yamada, Nobuhiko Noto, Shinji Nozaki, Kazuo Uchida, Hiroshi Morisaki
  • Publication number: 20040135166
    Abstract: In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.
    Type: Application
    Filed: October 22, 2003
    Publication date: July 15, 2004
    Applicants: Shin-Etsu Handotai Co., Ltd., Nanoteco Corporation
    Inventors: Masato Yamada, Jun-ya Ishizaki, Nobuhiko Noto, Kazunori Hagimoto, Shinji Nozaki, Kazuo Uchida, Hiroshi Morisaki