Patents Assigned to National Institute for Research in Inorganic Materials
  • Patent number: 4875967
    Abstract: A method for growing a single crystal of cubic boron nitride semiconductor in a growing container sealed under high pressure and high temperature conditions, which comprises dissolving in a dopant-containing boron nitride solvent a boron nitride starting material placed at a high temperature zone in the growing container, and providing a temperature gradient to the solvent so that the temperature dependence of the solubility is utilized to let the single crystal form and grow at a low temperature zone in the growing container.
    Type: Grant
    Filed: March 7, 1988
    Date of Patent: October 24, 1989
    Assignee: National Institute for Research in Inorganic Materials
    Inventors: Osamu Mishima, Shinobu Yamaoka, Osamu Fukunaga, Junzo Tanaka, Koh Era
  • Patent number: 4851205
    Abstract: An .alpha.-SIALON powder composed essentially of .alpha.-SIALON having the formula M.sub.x (Si,Al).sub.12 (O,N).sub.16 wherein M is at least one element selected from the group consisting of Li, Mg, Ca, Mn, Y and lanthanide metals and O<x.ltoreq.2.
    Type: Grant
    Filed: October 21, 1986
    Date of Patent: July 25, 1989
    Assignee: National Institute for Researches in Inorganic Materials
    Inventor: Mamoru Mitomo
  • Patent number: 4818735
    Abstract: A tetragonal system tunnel-structured compound having the formula:A.sub.x [Ga.sub.8 M.sub.y Ga.sub.(8+x)-y Ti.sub.16-x O.sub.56 ](I)wherein A is at least one alkali metal selected from the group consisting of K, Rb and Cs, or a solid solution of such alkali metal with lithium, sodium or barium, M is at least one trivalent metal selected from the group consisting of Al, Fe and Cr, x is a number of from 0.1 to 2.0, and y is a number of from 0 to 10.
    Type: Grant
    Filed: February 11, 1987
    Date of Patent: April 4, 1989
    Assignee: National Institute for Research in Inorganic Materials
    Inventors: Yoshinori Fujiki, Mamoru Watanabe, Takayoshi Sasaki, Yoshito Onoda, Tadashi Ohachi, Takefumi Mitsuhashi
  • Patent number: 4810439
    Abstract: A process for producing potassium hexatitanate fibers having a tunnel structure, which comprises mixing a titanium component represented by the general formula (Ti, M)O.sub.2 where M is metal impurities with a potassium component selected from the group consisting of potassium oxide, potassium compounds capable of forming potassium oxide when heated and a mixture thereof, to obtain a mixture represented by the general formula K.sub.2 O.n(Ti, N)O.sub.2 where n is from 1.5 to 2.5 and M is as defined above; heating the mixture to obtain a melt; forming from the melt a fibrous material having a layered crystalline structure corresponding to potassium dititanate (K.sub.2 O.2TiO.sub.2); leaching a part of K.sub.2 O from the fibrous material; and heating the fibrous material at a temperature of at least 800.degree. C. and lower than the melting point of the fibrous material.
    Type: Grant
    Filed: August 4, 1986
    Date of Patent: March 7, 1989
    Assignee: National Institute for Researches in Inorganic Materials
    Inventors: Yoshinori Fujiki, Takefumi Mitsuhashi
  • Patent number: 4794094
    Abstract: A process for producing a machinable crystallized glass having needle-like crystals precipitated therein, which comprises melting a mixture comprising from 40 to 60 mol % of SiO.sub.2, from 6 to 16 mol % of Al.sub.2 O.sub.3, from 6 to 16 mol % of Y.sub.2 O.sub.3 and from 15 to 30 mol % of CaO, and allowing the melt to cool to have fine needle-like crystals of Ca.sub.4 Y.sub.6 O(SiO.sub.4).sub.6 precipitated.
    Type: Grant
    Filed: February 13, 1987
    Date of Patent: December 27, 1988
    Assignee: National Institute for Research in Inorganic Materials
    Inventors: Akio Makishima, Mitsuaki Asami
  • Patent number: 4767608
    Abstract: A method for synthesizing diamond, which comprises:(a) generating a plasma by electric discharge in a gas selected from the group consisting of a hydrocarbon gas, hydrogen gas, an inert gas and a mixture thereof,(b) decomposing a carbon source by the plasma to form plasma gas containing carbon ions or carbon radicals,(c) effecting adiabatic expansion of the plasma gas to precipitate diamond.
    Type: Grant
    Filed: October 19, 1987
    Date of Patent: August 30, 1988
    Assignee: National Institute for Research in Inorganic Materials
    Inventors: Seiichiro Matsumoto, Mototsugu Hino, Yusuke Moriyoshi, Takashi Nagashima, Masayuki Tsutsumi
  • Patent number: 4725331
    Abstract: A process for producing tin oxide fibers, which comprises forming a melt comprising a solute composed essentially of tin oxide and a solvent selected from the group consisting of copper, a copper alloy, tin or a tin alloy, evaporating the solute from the melt, and introducing the evaporated solute to a low temperature zone, whereby tin oxide fibers are permitted to precipitate and grow in the low temperature zone.
    Type: Grant
    Filed: July 14, 1986
    Date of Patent: February 16, 1988
    Assignee: National Institute for Researches in Inorganic Materials
    Inventors: Kenji Uchida, Eisuke Bannai
  • Patent number: 4714599
    Abstract: A process for preparing rhombohedral system boron nitride, which comprises mixing NaBH.sub.4 with at least an equimolar amount of NH.sub.4 Cl, and heating the resulting mixture in a non-oxidizing atmosphere at a temperature of at least 750.degree. C. and lower than 1000.degree. C. for at least 3 hours.
    Type: Grant
    Filed: August 22, 1984
    Date of Patent: December 22, 1987
    Assignee: National Institute for Researches in Inorganic Materials
    Inventors: Tadao Sato, Toshihiko Ishii
  • Patent number: 4696810
    Abstract: A process for producing a powder material of perovskite or its solid solution represented by the formula:ABO.sub.3wherein A is one or more metal elements coordinated with 12 oxygen atoms, and B is one or more metal elements coordinated with 6 oxygen atoms, which comprises contacting an aqueous or alcohol solution of either component A or component B with a precipitating solution to form precipitates, then adding an aqueous or alcohol solution of the other component to form precipitates, and drying the precipitates, followed by calcining at a temperature of from 400.degree. to 1200.degree. C.
    Type: Grant
    Filed: April 2, 1986
    Date of Patent: September 29, 1987
    Assignee: National Institute for Researches in Inorganic Materials
    Inventors: Shin-ichi Shirasaki, Yasunari Hotta, Hiroshi Yamamura, Shin-ichi Matsuda, Kazuyuki Kakegawa, Yusuke Moriyoshi, Koichiro Takahashi, Hajime Haneda
  • Patent number: 4643859
    Abstract: A process for producing fine non-oxide powder from an alkoxide selected from the group consisting of a silicon alkoxide and an aluminum alkoxide, which comprises dispersing carbon powder in the alkoxide, hydrolyzing the dispersion, and heating the hydrolyzate mixture thereby obtained, in a nitrogen atmosphere at a temperature of from 1350.degree. C. to 1650.degree. C. for from 30 minutes to 30 hours.
    Type: Grant
    Filed: October 17, 1985
    Date of Patent: February 17, 1987
    Assignee: National Institute for Researches in Inorganic Materials
    Inventors: Mamoru Mitomo, Yuji Yoshioka
  • Patent number: 4639329
    Abstract: A functional organic-inorganic composite amorphous material obtained by adding to an organic metal compound of silicon or germanium capable of being made amorphous by hydrolysis and dehydrating condensation, functional organic molecules soluble in a solvent capable of dissolving said organic metal compound, together with the solvent, followed by hydrolysis and dehydrating condensation to form an integrated composite.
    Type: Grant
    Filed: September 19, 1985
    Date of Patent: January 27, 1987
    Assignees: National Institute for Researches in Inorganic Materials, Agency of Industrial Science and Technology
    Inventors: Akio Makishima, Toshiro Tani
  • Patent number: 4623424
    Abstract: A process for producing tin oxide fibers, which comprises forming a melt comprising a solute composed essentially of tin oxide and a solvent selected from the group consisting of copper, a copper alloy, tin or a tin alloy, evaporating the solute from the melt, and leading the evaporated solute to a low temperature zone, whereby tin oxide fibers are permitted to precipitate and grow in the low temperature zone.
    Type: Grant
    Filed: September 6, 1984
    Date of Patent: November 18, 1986
    Assignee: National Institute For Researches In Inorganic Materials
    Inventors: Kenji Uchida, Eisuke Bannai
  • Patent number: 4596942
    Abstract: A field emission type electron gun comprises a cathode, a plurality of anodes opposing in series to the cathode and a filament for heating the anodes, all being contained in a vacuum tube. The filament is placed immediately before a first anode directly opposing the cathode in a symmetrical manner so as to serve both as a gas expelling member and as an anode.
    Type: Grant
    Filed: February 14, 1984
    Date of Patent: June 24, 1986
    Assignee: National Institute for Researches in Inorganic Materials
    Inventors: Chuhei Oshima, Yoshio Ishizawa
  • Patent number: 4579704
    Abstract: A process for sintering cubic system silicon carbide powder, which comprises compacting a mixture of cubic system silicon carbide powder with more than 1% by weight and not more than 3% by weight of carbon and at least 0.10% by weight and less than 0.3% by weight of boron and sintering the compact thereby obtained, under vacuum or in a chemically inert atmosphere at a temperature of from 1,900.degree. to 2,200.degree. C.
    Type: Grant
    Filed: February 24, 1984
    Date of Patent: April 1, 1986
    Assignee: National Institute for Research in Inorganic Materials
    Inventors: Hidehiko Tanaka, Yoshizo Inomata, Hitoshi Tsukuda
  • Patent number: 4562163
    Abstract: A boron nitride complex comprising hBN in which lithium or an alkaline earth metal is diffused and supported in the form of its boron nitride. The boron nitride complex is prepared by heating hBN powder or a sintered product thereof and lithium, an alkaline earth metal, a lithium nitride or boride, or an alkaline earth metal nitride or boride in a non-oxidizing atmosphere to diffuse in and deposit on hBN powder or sintered product thereof, the lithium or alkaline earth metal in the form of its boron nitride. Also disclosed is a process for preparing a light-transmitting dense body of cubic system boron nitride, which comprises diffusing in and depositing on a sintered product of hexagonal system boron nitride, from 0.15 to 3.0 molar % of Me.sub.3 B.sub.2 N.sub.4 where Me is an alkaline earth metal, and sintering the Me.sub.3 B.sub.2 N.sub.4 -containing product thereby obtained, at a temperature of at least 1350.degree. C. under a thermodynamically stable pressure for cubic system boron nitride.
    Type: Grant
    Filed: September 14, 1983
    Date of Patent: December 31, 1985
    Assignee: National Institute for Researches in Inorganic Materials
    Inventors: Tadashi Endo, Tadao Sato, Osamu Fukunaga
  • Patent number: 4530909
    Abstract: A process for preparing aluminosilicate glass comprising from 30 to 60 molar % of SiO.sub.2, from 20 to 35 molar % of Al.sub.2 O.sub.3 and from 10 to 30 molar % of a total of rare earth oxides composed mainly of Y.sub.2 O.sub.3, wherein an yttrium concentrate is used as the rare earth oxides composed mainly of Y.sub.2 O.sub.3, and ZrO.sub.2 not in excess of 8 molar % to improve alkali resistance.
    Type: Grant
    Filed: October 19, 1984
    Date of Patent: July 23, 1985
    Assignee: National Institute for Researches in Inorganic Materials
    Inventors: Akio Makishima, Tatsuya Nagata, Takajiro Shimohira
  • Patent number: 4469802
    Abstract: A process for producing a sintered body of cubic system boron nitride comprises steps of:(a) mixing raw material boron nitride selected from the group consisting of hexagonal system boron nitride, cubic system boron nitride, and a mixture thereof with Me.sub.3 B.sub.2 N.sub.4 (where: Me represents an alkaline earth metal) in an amount of from 0.15 to 3.0 mol %; and(b) treating said mixed material at a temperature of 1350.degree. C. and above under a thermodynamically stabilized pressure condition of the cubic system boron nitride.
    Type: Grant
    Filed: December 17, 1982
    Date of Patent: September 4, 1984
    Assignee: National Institute for Researches in Inorganic Materials
    Inventors: Tadashi Endo, Osamu Fukunaga, Tadao Sato
  • Patent number: 4443420
    Abstract: Cubic system boron nitride from rhombohedral system boron nitride is produced by a shock wave compression method. The process comprises applying a thermodynamically stable pressure to rhombohedral system boron nitride to convert it to cubic system boron nitride.
    Type: Grant
    Filed: March 17, 1982
    Date of Patent: April 17, 1984
    Assignee: National Institute for Researches in Inorganic Materials
    Inventors: Tadao Sato, Toshihiko Ishii, Nobuo Setaka
  • Patent number: 4438051
    Abstract: A process for producing a translucent .beta.-sialon sintered product, which comprises mixing fine powders of silicon nitride and aluminum nitride having a high purity of at least 99% and a particle size of at most 200 microns and fine powders of aluminum oxide and silicon oxide having a high purity of at least 99% in such a proportion as to form .beta.-sialon of the formula Si.sub.6-z Al.sub.z O.sub.z N.sub.8-z where z is from 1 to 4.2, and hot-pressing the mixture in a nitrogen atmosphere at a temperature of from 1500.degree. to 1850.degree. C. under pressure of from 10 to 1500 kg/cm.sup.2.
    Type: Grant
    Filed: June 14, 1982
    Date of Patent: March 20, 1984
    Assignee: National Institute for Researches in Inorganic Materials
    Inventors: Mamoru Mitomo, Yusuke Moriyoshi, Toshikazu Sakai, Toshiaki Osaka
  • Patent number: 4434188
    Abstract: A method for synthesizing diamond wherein hydrogen gas which has passed through a micro-wave non-electrode discharge and mixed with hydrocarbon gas, or a mixture gas consisting of hydrocarbon and hydrogen after its passing through a micro-wave non-electrode discharge, is introduced onto the surface of a substrate heated to a temperature of from 300.degree. to 1300.degree. C. to decompose hydrocarbon in its energetically activated state for the diamond deposition.
    Type: Grant
    Filed: November 17, 1982
    Date of Patent: February 28, 1984
    Assignee: National Institute for Researches in Inorganic Materials
    Inventors: Mutsukazu Kamo, Seiichiro Matsumoto, Yoichiro Sato, Nobuo Setaka