Abstract: A thermal cracking chemical vapor deposition method for synthesizing a nano-carbon material is provided. The method includes steps of (a) providing a substrate, (b) spreading a catalyst on the substrate, (c) putting the substrate into a reactor, (d) introducing a carbon containing material, and (e) heating the carbon containing material, thereby the carbon containing material being cracked to provide a carbon source for forming the nano-carbon material on the substrate.

Abstract: A detecting device for biochemical detections is provided. The detecting device includes a first substrate, a magnetic layer located on the first substrate, an isolation layer located on the magnetic layer, at least a first electrode located on the isolation layer, a first dielectric layer located on the first electrode, a first hydrophobic layer located on the first dielectric layer, a second substrate, at least a second electrode located on the second substrate and having a cathode and an anode, a second dielectric layer located on the second electrode' and a second hydrophobic layer located on the second dielectric layer. The first electrode is zigzag-shaped, and the cathode and the anode of the second electrode are comb-shaped and interlaced with each other.

Abstract: A test method for a plurality of circuits respectively having inputs for greatly reducing the required test time and the control circuit complexity is provided. The method includes steps of providing a set of test patterns for detecting a characteristic of the circuits, providing a common data line, and electrically connecting the circuit inputs to the common data line so that the test pattern can be broadcasted to the circuits through the common data line. The present invention also provides an architecture for implementing such method.

Abstract: The multi-mode Multiplier-And-Accumulator of the present invention is used with the double-precision Complex-Valued Multiplier-And Accumulator as a main configuration, and the different precisions and digital modes make it more flexible, compared to the traditional real number Multiplier-And-Accumulator. In addition, it does not have a data alignment problem which occurs in the traditional application of different precision Subword Parallel processors. This kind of Multiplier-And-Accumulator takes a double-precision Complex-Valued Multiplier-And- Accumulator as the main configuration, with four double-precision real-valued multipliers and several groups of accumulators to assist in different modes ofoperation. Each double-precision real- valued multiplier can be segmented into four single-precision multipliers, and then double-precision multiplier products are obtained by means of displacement addition.

Abstract: The present invention provides a technology for increasing the spectral width of semiconductor optical amplifiers, employing different separate confinement heterostructures (SCH's) so as to form non-identical multiple quantum wells such that the semiconductor photo-electronic devices have better temperature characteristics and more reliable modulation characteristics. If such a technology is used in the fabrication of semiconductor laser with a tunable wavelength, it is possible to achieve a large range of modulated wavelength, which is very useful in optical communication.

Abstract: Methods for preparing yeast with improved biotin productivity using integrating plasmids encoding biotin synthase. The yeast is transformed by an integrating plasmid, which includes a Candida utilis biotin synthase gene BIO2, an assistant DNA sequence to promote integration of the plasmid into the C. utilis genome, a promoter sequence, and a selection marker. Other embodiments include Saccharomyces cerevisiae integrating plasmids.

Abstract: An indexing method for mapping multiple segments of coded fields in a table structure. The indexing method can complete resolving address mapping within a short delay, and has a collision-free characteristic when total bit-width of variation for coded fields is the same as the bit-width of the table. The method can be used to resolve Virtual Path Identifier/ Virtual Channel Identifier (VPI/VCI) mapping for Asynchronous Transfer Mode (ATM) technologies.

Abstract: An equipment management method for managing semiconductor equipment via an equipment manager. In the equipment management method, production scenario rules and equipment behavior rules are first defined respectively in a production scenario database of a configuration controller and an equipment behavior database of an equipment driver. Them, a command is received from a manufacturing execution system (MES), and is converted into a production process scenario by looking up the corresponding production scenario rule in the production scenario database. Thereafter, the production process scenario is converted into a GEI (generic equipment interface) message with a GEI message specification, and the GEI message is transmitted to the equipment driver. Then, the GEI message is converted into equipment communication messages regulated by an equipment communication protocol by looking up the corresponding equipment behavior rule in the equipment behavior database.

Abstract: The present invention discloses an active-hydrogen-containing curing agent having a phosphorus group, and a flame retardant cured epoxy resin which can be prepared via an addition reaction between the active hydrogen and the epoxide group of an epoxy resin. The cured flame retardant epoxy resin is environmentally friendly and is suitable for printed circuit board and semiconductor encapsulation applications. The phosphorus group of the curing agent has a chemical structure as follows: wherein Ar is a substituted or un-substituted phenyl or phenoxy.

Abstract: A method for generating a Drosophila clipped FRT (cFRT) chromosome is provided, wherein the chromosome is incapable of reacting with a P transposase but remains capable of reacting with a yeast site-specific flippase recombinase (FLP). The method includes steps of: (a) exposing a FRT chromosome to the P transposase causing a local and imprecise transposition, wherein the FRT chromosome contains a P[FRT] insertion with a selection marker gene, (b) screening the P[FRT] insertion insensitive to the P transposase to obtain screened products, (c) selecting candidate products from the screened products by further examinations, and (d) exposing the candidate products by the P transposase and selecting a desired product by the further examinations to obtain the Drosophila clipped FRT (cFRT) chromosome incapable of reacting with the P transposase but remaining capable of reacting with the yeast site-specific flippase recombinase.

Abstract: This invention discloses a reduced-width, low-error multiplier that can be used in Digital Signal Processing (DSP). Specifically, this invention relates to a reduced-width, low-error multiplier capable of processing digital signals of communication systems such as a timing recovery circuit, a carrier recovery circuit, and a FIR filter, etc. This invention derives a binary compensation vector to compensate for the error caused by the reduction of area without any hardware overhead, and implements the compensation structure of an Array and a Booth multiplier to reduce hardware complexity.

Abstract: The present invention discloses a driver for amplifying an operating voltage of a low driving-voltage luminary. The driver includes a driving circuit providing a first signal, and a negative multiple voltage circuit electrically connected to the driving circuit and the luminary respectively for transforming the first signal into a second signal to be transmitted to the luminary, thereby the luminary being driven in response to the second signal. The luminary circuit is connected between power source (Vdd) and the negative multiple voltage circuit.

Abstract: A method of treating psychosis in a patient which comprises administering a pharmaceutical composition useful in treating psychosis containing a therapeutically effective amount of 1-[piperidinyl]methyl-2,3-dihydroimidazo[1,2-c]quinazolin-5(6H)-one as an active ingredient.

Abstract: The present invention provides a technique to reduce a stress of thick spin-on dielectric layer by forming a sandwich dielectric structure, wherein a first dielectric layer is formed on a substrate by spin coating, a liquid phase deposited (LPD) silica layer is formed the first dielectric layer, and a second dielectric layer is formed on the LPD silica layer by spin coating. The LPD silica layer can be further subjected to a nitrogen plasma treatment to enhance its thermal stability and anti-water penetration ability.

Abstract: A mechanical disk brake for a bicycle is characterized in a thrust bearing included in a cam mechanism thereof to overcome the problem of a locked disk brake due to an overly large friction as frequently occurs in conventional mechanical disk brakes, and an eccentric force-application arm with an improved geometrical shape to create different arms of force that enables production of an enhanced tail braking force for the mechanical disk brake. The problem of largely reduced braking force occurs in conventional rim brakes in bad weather or in braking over a prolonged time, and the problem of self-locking frequently occurs in the conventional mechanical disk brakes.

Abstract: There is disclosed a semiconductor sensor for measuring the contact shear stress distribution between the socket of an above-knee (AK) prostheses and the soft tissue of an amputee's stump. The sensor is fabricated by the micro-electro-mechanical system (MEMS) technology, and its main sensing part is 2-X shaped with a flange structure. The sensor is prepared by anisotropic wet etching of bulk silicon in KOH solution and a square flange above the sensing diaphragm is formed through surface micromachining of deposited SiO2 thin film. This invention has the following characteristics: piezo-resistivity of the monolithic silicon will be utilized to convert shear deformation of the sensor into an electrical signal and a micro sensor which can measure the shear force vector acting on the sensing flange.

Abstract: The present invention provides a technique to reduce a stress of thick spin-on dielectric layer by forming a sandwich dielectric structure, wherein a first dielectric layer is formed on a substrate by spin coating, a liquid phase deposited (LPD) silica layer is formed the first dielectric layer, and a second dielectric layer is formed on the LPD silica layer by spin coating. The LPD silica layer can be further subjected to a nitrogen plasma treatment to enhance its thermal stability and anti-water penetration ability.

Abstract: A digital FM demodulator utilizes delay lines as the timing reference and incorporates the concept of delta-sigma analog-to-digital conversion to implement the function of time-to-digital conversion. The FM demodulator is constructed from delay lines, a multiplexer, a phase detector, a charge pump circuit, a quantizer and a digital integrator. The modulated signal on an intermediate frequency carrier passes through the delay lines and is then phase-compared with the original modulation signal. The comparison produces a pulse which is converted into a voltage and stored in a capacitor by way of the charge pump circuit. The voltage having been accumulated and quantized, a new delayed output signal is acquired to compare its phase with the input signal. Meanwhile, the phase difference between input signal and delayed signal is used to select a delay for the delayed signal for the next cycle. The phase difference is continuously evaluated and adjusted to produce zero phase difference.

Abstract: A high-sensitivity Pd/InP hydrogen sensor was made by a) forming an n-type or p-type semiconductor film on a semiconductor substrate; b) forming a patterned first metal electrode on the semiconductor film, wherein the first metal electrode forms an Ohmic contact with the semiconductor film; and c) forming a second metal electrode on the semiconductor film, the second metal electrode being isolated from the first metal electrode, wherein the second metal electrode forms a Schottky contact with the semiconductor film, wherein a thickness of the second metal electrode and a material of which the second metal electrode is made enable a Schottky barrier height of the Schottky contact to decrease when hydrogen contacts the second metal electrode. The second metal electrode can be physical vapor deposited or electroless plated.

Abstract: An optical communication system suitable for a coherent optical satellite communication is configured to include an optical transmission device having a laser signal generator, a first reference laser signal generator having a first local oscillating laser signal generator and an automatic frequency controller, an optical receiving device, and a second reference optical signal generator having a second local oscillating laser signal generator. The first reference local oscillating laser signal generator and the automatic frequency controller are used to generate a fixed beat reference optical signal, and thus the optical receiving device is capable of locking the transmitted laser signal according to the fixed beat reference laser signal in a way of heterodyne receiving so as to demodulate the transmitted signal frequency accurately and resolve the problem of laser frequency drifting.