Abstract: Present invention is related to a polyimide of formula as following: and a ketone-containing alicyclic dianhydride of formula as following: wherein: R1, R2, R3, R4 denote hydrogen atom or carbon containing functional group with carbon number at a range of 1-4; R5 denotes diamine group; and n equals to any positive integer.

Abstract: A method for performing radio resource allocation in a TN-NTN mixed system is provided. The system includes a satellite that covers an NTN cell, and a plurality of TN base stations (TN BSs) within a coverage of the satellite. The NTN cell serves a plurality of NTN user equipments (NTN UEs). The method includes dividing the plurality of NTN UEs into X NTN UE groups; partitioning a radio resource into M parts, where M?X; dividing the plurality of TN BSs into M TN BS groups; deciding radio resource allocation regarding the plurality of NTN UEs, by allocating an i-th part of the radio resource to an i-th NTN UE group, where i=1, 2, . . . , X; and deciding radio resource allocation regarding the plurality of TN BSs, by allocating a sum of a j-th to an M-th parts of the radio resource to a j-th TN BS group, where j=1, 2, . . . , M.

Abstract: This disclosure provides a method, an apparatus, and a non-transitory computer-readable medium for radio resource allocation for a terrestrial network (TN) cell. In the method, the TN cell is determined to be outside a coverage of a first non-terrestrial network (NTN) cell. In response to the TN cell being outside the coverage of the first NTN cell, a radio resource is allocated to the TN cell based on a radio resource of the first NTN cell.

Abstract: Methods for treating cancer and/or reducing sternness of cancer stem cells in a subject using a CD14 antagonist, which may be an anti-CD14 antibody.

Abstract: The present invention discloses a metal-free perovskite film and metal-free perovskite piezoelectric nanogenerators comprising the film. The metal-free perovskite film is organic, lead-free and metal-free. The open-circuit voltage of the metal-free perovskite piezoelectric nanogenerators can reach 9˜16 V and the short-circuit current of the metal-free perovskite piezoelectric nanogenerators can reach 38˜55 nA. Also, the metal-free perovskite piezoelectric nanogenerators can be used as self-powered strain sensor of human-machine interface application and be adopted in in vitro electrical stimulation devices.

Abstract: The present invention relates to a method and apparatus for non-invasive image-observing the density of an intra-epidermal nerve fiber of human skin, in which the method includes: providing a nonlinear optical microscopy device for capturing an intra-epidermal nerve fiber structural image of an acquisition area of a to-be-tested human skin to observe continuous signals of intra-epidermal nerve fiber images, wherein the nonlinear optical microscopy device includes: a laser light source for emitting laser light with a pulsed laser, and an image processing member for processing image signals; focusing the laser light on the intra-epidermal nerve fiber to obtain nerve signals of the intra-epidermal nerve fiber that have a length of at least three points of the intra-epidermal nerve fiber, and constitute a plurality of nerve fibers; and calculating the total number of nerve fiber signals of the to-be-tested human skin, and dividing it by the total area of captured images to obtain the density of the to-be-tested h

Abstract: An intervertebral fusion device includes a structural ceramic body. The structural ceramic body has a bottom surface, a top surface, a peripheral surface connected between the bottom surface and the top surface, and at least one pore channel penetrating the bottom surface and the top surface. The inner surface of the pore channel is either a convex curved surface or a funnel-shaped surface. For the pore channel having the convex curved surface, the pore diameter of the pore channel gradually expands from the center of the pore channel to the top surface and the bottom surface. The pore diameter can also gradually expand from the bottom surface to the top surface. The peripheral surface of the structural ceramic body is wavy or zigzag.

Abstract: An image processing system includes an ophthalmoscope device and a processor. The ophthalmoscope device is configured to obtain a color fundus image. The processor is configured to receive the color fundus image; generate a blood vessel segmentation image that corresponds to the color fundus image using a computer vision algorithm or a deep learning model; preprocess the color fundus image and the blood vessel segmentation image to obtain an initial input image; and input the initial input image into a convolutional neural network. The convolutional neural network outputs a value. In addition, the processor generates fundus image analysis information from the cup-to-disc ratio and the value.

Abstract: A method includes forming a 2-D material semiconductor layer over a substrate; forming source/drain electrodes covering opposite sides of the 2-D material semiconductor layer, while leaving a portion of the 2-D material semiconductor layer exposed by the source/drain electrodes; forming a first gate dielectric layer over the portion of the 2-D material semiconductor layer by using a physical deposition process; forming a second gate dielectric layer over the first gate dielectric layer by using a chemical deposition process, in which a thickness of the first gate dielectric layer is less than a thickness of the second gate dielectric layer; and forming a gate electrode over the second gate dielectric layer.

Abstract: An electronic device includes a substrate, a transistor, and a ring resonator. The transistor is over the substrate. The ring resonator is over the substrate and overlaps with the transistor. The ring resonator includes a conductive loop and an impedance matching element. The conductive loop includes a loop portion having two first parts and a second part and two feeding lines. Each of the first parts of the loop portion is between the second part of the loop portion and one of the feeding lines, and a tunnel barrier of the transistor is closer to the second part than to the feeding lines. The impedance matching element is closer to the feeding lines than to the second part.

Abstract: A device includes a bottom transistor, a top transistor, and an epitaxial isolation structure. The bottom transistor includes a first channel layer, first source/drain epitaxial structures, and a first gate structure. The first source/drain epitaxial structures are on opposite sides of the first channel layer. The first gate structure is around the first channel layer. The top transistor is over the bottom transistor and includes a second channel layer, second source/drain epitaxial structures, and a second gate structure. The second source/drain epitaxial structures are on opposite sides of the second channel layer. The second gate structure is around the second channel layer. The epitaxial isolation structure is between and in contact with one of the first source/drain epitaxial structures and one of the second source/drain epitaxial structures, such that the one of the first source/drain epitaxial structures is electrically isolated from the one of the second source/drain epitaxial structures.

Abstract: A semiconductor device includes a substrate, a semiconductor fin, a silicon layer, a gate structure, gate spacers, and source/drain structures. The semiconductor fin is over the substrate. The silicon layer is over the semiconductor fin. The gate structure is over the silicon layer, in which the gate structure includes an interfacial layer over the silicon layer, a gate dielectric layer over the interfacial layer, and a gate electrode over the gate dielectric layer. The gate spacers are on opposite sidewalls of the gate structure and in contact with the interfacial layer of the gate structure, in which a bottom surface of the interfacial layer is higher than bottom surfaces of the gate spacers. The source/drain structures are on opposite sides of the gate structure.

Abstract: An in vitro co-culture system comprising cancer-associated fibroblasts (CAFs) and cancer cells for producing and maintaining cancer stem cells and uses thereof for identifying agents capable of reducing cancer cell stemness. Also disclosed herein are a paracrine network through which CAFs facilitate production and/or maintenance of cancer stem cells and the use of components of such a paracrine network for prognosis purposes and for identifying cancer patients who are likely to respond to certain treatment.

Abstract: A semiconductor structure includes a semiconductor substrate, a gate structure, a source/drain structure, a contact, a dielectric layer, and a metal line. The gate structure is on the semiconductor substrate. The source/drain structure is adjacent to the gate structure. The contact lands on the source/drain structure. The dielectric layer spas the contact and the gate structure. The metal line extends through the dielectric layer to the contact. The metal line includes a liner over the contact, a magnetic layer over the liner, a graphene layer over the magnetic layer, and a filling metal over the graphene layer. The magnetic layer has a greater permeability coefficient than the filling metal.

Abstract: The present invention is directed to compositions and methods for treating aromatic L-amino acid decarboxylase (AADC) deficiency. This invention includes a method of treating AADC deficiency in a pediatric subject, comprising the steps of: (a) providing a pharmaceutical formulation comprising an rAAV2-hAADC vector, (b) stereotactically delivering the pharmaceutical formulation to at least one target site in the brain of the subject in a dose of an amount at least about 1.8×1011 vg; wherein delivering the pharmaceutical formulation to the brain is optionally by frameless stereotaxy, and optionally wherein the dose is an amount of at least about 2.4×1011 vg and in some embodiments wherein the pharmaceutical formulation comprises a rAAV2-hAADC vector concentration of about 5.7×1011 vg/mL.

Abstract: An object detection method and an electronic apparatus are provided. A processor is configured to perform the following. An original image is received. A plurality of initial feature layers of different scales is extracted from the original image. A plurality of fused feature layers of different scales is obtained through an interpolation and an addition operation based on the initial feature layers. The fused feature layers are respectively input into corresponding detection heads to obtain a bounding box location probability distribution through a bounding box regression branch of the detection head and obtain a classification probability distribution through a classification branch of the detection head.

Abstract: A method for in vitro activation and/or expansion of immune cells is provided, including the steps of: a) providing magnetic particles having multi-protrusive surface modified with at least one type of immuno-inducing substance, in which each magnetic particle includes a copolymer core, a polymer layer, a magnetic substance layer, and a silicon-based layer from the inside to the outside; b) providing a cell solution including at least one type of immune cell in the cell solution; and c) bringing the magnetic particles in contact with the cell solution, in which the at least one type of immuno-inducing substance on the surface of the magnetic particle activates and/or expands the at least one type of immune cell in the cell solution.

Abstract: A device includes a first horizontal-gate-all-around (HGAA) transistor, a second HGAA transistor, a first vertical-gate-all-around (VGAA) transistor, and a second VGAA transistor. The first HGAA transistor and the second HGAA transistor are adjacent to each other. The first VGAA transistor is over the first HGAA transistor. The second VGAA transistor is over the second HGAA transistor. A top surface of the first VGAA transistor is substantially coplanar with a top surface of the second VGAA transistor.

Abstract: An integrated circuit device includes a substrate and a memory device. The memory device is over the substrate. The memory device includes a bottom electrode, a dielectric layer, an antiferroelectric layer, and a top electrode. The dielectric layer is over the bottom electrode. The antiferroelectric layer is over the dielectric layer. The top electrode is over the antiferroelectric layer.

Abstract: A method includes forming source/drain regions in a semiconductor substrate; depositing a zirconium-containing oxide layer over a channel region in the semiconductor substrate and between the source/drain region; forming a titanium oxide layer in contact with the zirconium-containing oxide layer; forming a top electrode over the zirconium-containing oxide layer, wherein no annealing is performed after depositing the zirconium-containing oxide layer and prior to forming the top electrode.