Patents Assigned to National University Corporation Tokyo University of Agriculture and Technology
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Publication number: 20210218215Abstract: An optical pulse pair generator is configured to generate an optical pulse pair including a first pulse beam and a second pulse beam having respective central wavelengths that are separated by a predetermined wavelength difference from each other and having target time waveforms that are substantially the same as each other. The optical pulse pair generator provided includes a splitter section configured to split an incident pulse beam into two, a first shaping section configured to shape one of the pulse beams split by the splitter section by shaping into the target time waveform and setting a central frequency so as to configure the first pulse beam, and a second shaping section configured to shape the other of the pulse beams split by the splitter section by shaping into the target time waveform so as to configure the second pulse beam.Type: ApplicationFiled: April 19, 2019Publication date: July 15, 2021Applicant: National University Corporation Tokyo University of Agriculture and TechnologyInventors: Kazuhiko Misawa, Terumasa Ito
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Patent number: 11047067Abstract: [Problem] To provide a crystal laminate structure having a ?-Ga2O3 based single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure 1 which includes: a Ga2O3 based substrate 10; and a ?-Ga2O3 based single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the Ga2O3 based substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1×1013 to 5.0×1020 atoms/cm3.Type: GrantFiled: December 3, 2019Date of Patent: June 29, 2021Assignees: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Ken Goto, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
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Publication number: 20210172061Abstract: A method for producing a GaN crystal that includes: (i) a seed crystal preparation step of preparing a GaN seed crystal having one or more facets selected from a {10-10} facet and a {10-1-1} facet; and (ii) a growth step of growing GaN from vapor phase on a surface comprising the one or more facets of the GaN seed crystal using GaCl3 and NH3 as raw materials.Type: ApplicationFiled: February 18, 2021Publication date: June 10, 2021Applicants: MITSUBISHI CHEMICAL CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Kenji ISO, Akinori KOUKITU, Hisashi MURAKAMI
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Publication number: 20210161908Abstract: This invention relates to a preventive and/or therapeutic agent for sarcopenia, comprising a prostaglandin D2 production inhibitor as an active ingredient.Type: ApplicationFiled: April 18, 2019Publication date: June 3, 2021Applicants: NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY, Taiho Pharmaceutical Co., Ltd.Inventors: Masaki INADA, Daisuke KAJIWARA
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Publication number: 20210138786Abstract: A liquid jet discharge device including an ejection section, a pressure generation section, and an impulse force impartation means. The ejection section is open at both end portions and internally houses a liquid such that a contact angle between the liquid and at least an inner face of the ejection section is less than 90°. The pressure generation section is in communication with one end portion of the ejection section, has a cross-sectional area larger than a cross-sectional area of the ejection section, has a length in a discharge direction of a liquid jet that is longer than a length in the discharge direction from the one end portion of the ejection section to a surface of the liquid, and houses the liquid at least at a bottom face side onto which the one end portion opens. The impulse force impartation means is configured to impart an impulse force to the pressure generation section.Type: ApplicationFiled: June 20, 2019Publication date: May 13, 2021Applicants: National University Corporation Tokyo University of Agriculture and Technology, Kishu Giken Kogyo Co., Ltd.Inventors: Yoshiyuki Tagawa, Masaaki Kurita, Shinji Torii
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Patent number: 10985016Abstract: A semiconductor substrate that is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method includes a ?-Ga2O3-based single crystal, and a principal plane that is a plane parallel to a [100] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer including a ?-Ga2O3-based single crystal and formed on the principal plane of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for producing an epitaxial wafer includes by using the HVPE method, epitaxially growing an epitaxial layer including a ?-Ga2O3-based single crystal on a semiconductor substrate that includes a ?-Ga2O3-based single crystal and has a principal plane parallel to a [100] axis of the ?-Ga2O3-based single crystal.Type: GrantFiled: November 16, 2016Date of Patent: April 20, 2021Assignees: Tamura Corporation, National University Corporation Tokyo University of Agriculture and TechnologyInventors: Ken Goto, Yoshinao Kumagai, Hisashi Murakami
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Patent number: 10961619Abstract: The present invention provides a novel method for producing a GaN crystal, the method including growing GaN from vapor phase on a semi-polar or non-polar GaN surface using GaCl3 and NH3 as raw materials. Provided herein is an invention of a method for producing a GaN crystal, including the steps of: (i) preparing a GaN seed crystal having a non-polar or semi-polar surface whose normal direction forms an angle of 85° or more and less than 170° with a [0001] direction of the GaN seed crystal; and (ii) growing GaN from vapor phase on a surface including the non-polar or semi-polar surface of the GaN seed crystal using GaCl3 and NH3 as raw materials.Type: GrantFiled: September 13, 2018Date of Patent: March 30, 2021Assignees: MITSUBISHI CHEMICAL CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Kenji Iso, Akinori Koukitu, Hisashi Murakami
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Patent number: 10903579Abstract: A sheet-type metamaterial includes: a film-shaped dielectric substrate; a first and second wire array formed on the dielectric substrate's front surface and back surface respectively. The first wire array includes elongated metallic first cut wires of a length aligned in a y-axis direction with a gap g therebetween and in an x-axis direction with space s therebetween. The second wire array includes second cut wires having the same shape as first cut wires and aligned so as to overlap first cut wires and to be symmetric with the first cut wires. With a design frequency set at 0.51 THz, the dielectric substrate's thickness d is set at about 50 ?m, space s is set at about 361 ?m, gap g is set at about 106 ?m, and the length of first and second cut wires is set at a length approximate to a value to generate resonance at a working frequency.Type: GrantFiled: February 7, 2017Date of Patent: January 26, 2021Assignee: National University Corporation Tokyo University of Agriculture and TechnologyInventor: Takehito Suzuki
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Patent number: 10894270Abstract: A liquid jet discharge device includes: a narrow tube having a tube shaped body that is open at both ends, and in which a discharge liquid being disposed therein, the discharge liquid contacting at least at an inner face of the narrow tube at a contact angle of less than 90 degrees; a container in which a transmission medium being disposed at a base side thereof where one end of the narrow tube is disposed, so as to enable pressure to be transmitted to the discharge liquid; an adjustment mechanism that causes a liquid surface of the discharge liquid inside the narrow tube and an interface of the transmission medium outside the narrow tube and inside the container to be staggered in position along an axial direction of the narrow tube; and a generation mechanism that generates a pressure wave in the transmission medium such that a liquid jet is discharged from the discharge liquid inside the narrow tube.Type: GrantFiled: May 13, 2016Date of Patent: January 19, 2021Assignee: NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Yoshiyuki Tagawa, Hajime Onuki
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Publication number: 20210011304Abstract: Provided are stereoscopic eyeglasses capable of reducing visual fatigue in binocular stereoscopic display by a simple configuration. In stereoscopic eyeglasses, in order to expand a tolerance of match between vergence and accommodation enabling comfortable stereovision in eyeglasses-using stereoscopic display, wide-focus lenses ranging in focal length are incorporated so as to overlap optical filters in light transmission directions, and accordingly, visual fatigue to be caused by vergence-accommodation conflict during stereoscopic image observation is reduced.Type: ApplicationFiled: June 7, 2019Publication date: January 14, 2021Applicants: National University Corporation Tokyo University of Agriculture and Technology, Itoh Optical Industrial Co., Ltd.Inventors: Yasuhiro Takaki, Yasushi Miyajima
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Publication number: 20200407735Abstract: A vector includes one or more promoters. The promoters are expressed specifically in a cottonseed surface or a cotton fiber or both of the cottonseed surface and the cotton fiber.Type: ApplicationFiled: August 1, 2018Publication date: December 31, 2020Applicants: NIPPON STEEL TRADING CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventor: Sakae Suzuki
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Publication number: 20200407497Abstract: Provided is an aliphatic polycarbonate applicable to the production of a block copolymer by radical polymerization. The aliphatic polycarbonate is represented by formula (1): wherein R1, R2, R3, and R4 are identical or different, and each represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 15 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 20 carbon atoms; A and B are identical or different, and each represents a substituent that serves as an initiating group for living radical polymerization, a hydroxy group, an alkoxy group, an acyloxy group, or a carboxy group, provided that at least one of A and B is a substituent that serves as an initiating group for living radical polymerization; and m is an integer of 10 to 2500.Type: ApplicationFiled: September 3, 2018Publication date: December 31, 2020Applicants: NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY, SUMITOMO SEIKA CHEMICALS CO., LTD.Inventors: Koji NAKANO, Kiyoshi NISHIOKA
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Patent number: 10870833Abstract: Provided is a method for efficiently and stably separating cells having a high biological activity from a biological tissue, by using a degrading-enzyme composition, which is prepared by adding an enzyme for degrading a major protein of the biological tissue in an amount determined depending on the composition of the major protein to a predetermined amount of a neutral protease and/or a protease derived from Clostridium sp. According to this method, the type and amount of protein-degrading enzyme to be used for isolating cells can be determined from the composition of a major protein of the biological tissue. Thus, cells having a high biological activity can be efficiently separated while reducing the amount of protein-degrading enzyme to be used.Type: GrantFiled: August 22, 2018Date of Patent: December 22, 2020Assignees: TOHOKU UNIVERSITY, MEUI SEIKA PHARMA CO., LTD., NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Masafumi Goto, Kazutaka Murayama, Youhei Yamagata, Kimiko Watanabe
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Patent number: 10861945Abstract: A semiconductor element includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a channel layer on the buffer layer, the channel layer including a ?-Ga2O3-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a ?-Ga2O3-based single crystal including a donor impurity.Type: GrantFiled: August 18, 2015Date of Patent: December 8, 2020Assignees: TAMURA CORPORATION, NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Kohei Sasaki, Ken Goto, Masataka Higashiwaki, Man Hoi Wong, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
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Patent number: 10807573Abstract: A driving assistance control apparatus of a vehicle includes a blind area detector, a driving operation detector, and an electronic control unit. The blind area detector is configured to detect the presence or absence of a blind area as seen from the vehicle in a traveling direction of the vehicle. The driving operation detector is configured to detect driving operation of the driver. The electronic control unit is configured to perform automatic deceleration control of the vehicle based on detection of the presence of the blind area by the blind area detector. The electronic control unit is configured to start the automatic deceleration control, by referring to the driving operation of the driver after detection of the presence of the blind area by the blind area detector.Type: GrantFiled: May 5, 2017Date of Patent: October 20, 2020Assignees: TOYOTA JIDOSHA KABUSHIKI KAISHA, National University Corporation Tokyo University of Agriculture and Technology, THE UNIVERSITY OF TOKYOInventors: Shintaro Inoue, Hideo Inoue, Pongsathorn Raksincharoensak, Yuichi Saito, Masao Nagai, Takuma Ito, Tsukasa Shimizu
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Patent number: 10787540Abstract: The present invention provides a thermally decomposable binder that achieves a reduced residual carbon after sintering, and that can be subjected to a dewaxing treatment at a relatively low temperature in a non-oxidative atmosphere. More specifically, the present invention provides an aliphatic polycarbonate that has a structure obtained by neutralizing a Brønsted acid with an organic onium salt in a side chain.Type: GrantFiled: July 5, 2017Date of Patent: September 29, 2020Assignees: NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY, SUMITOMO SEIKA CHEMICALS CO., LTDInventors: Koji Nakano, Kiyoshi Nishioka, Shizuka Hachiken
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Patent number: 10759901Abstract: A thermally decomposable binder containing an aliphatic polycarbonate resin containing a constituting unit represented by the formula (1): wherein each of R1, R2 and R3, which may be identical or different, is a hydrogen atom, an alkyl group having from 1 to 10 carbon atoms, or an aryl group having from 6 to 20 carbon atoms; and n is 1 or 2. The thermally decomposable binder and the fine inorganic particle-dispersed paste composition, each containing an aliphatic polycarbonate resin of the present invention can be used in general molded articles, optical materials such as films, fibers, optical fibers, and optical disks, thermally decomposable materials such as ceramic binders, and lost foam casting, medicinal materials such as drug capsules, additives for biodegradable resins, main components for biodegradable resins, and the like.Type: GrantFiled: September 2, 2015Date of Patent: September 1, 2020Assignees: NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY, SUMITOMO SEIKA CHEMICALS CO., LTD.Inventors: Koji Nakano, Kiyoshi Nishioka, Masahiro Suzuki, Nobutaka Fujimoto
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Patent number: 10756388Abstract: A solid electrolyte contains: a copolymer having a constituent unit represented by a formula (1) below and a constituent unit represented by a formula (2) below; and a metal salt. In the formula (1), m is 2 or 3, and R1 each independently represent a hydrogen atom or a methyl group. In the formula (2), n is 2 or 3, and R2 each independently represent a hydrogen atom or a methyl group.Type: GrantFiled: August 17, 2016Date of Patent: August 25, 2020Assignees: LINTEC CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Takashi Morioka, Yoichi Tominaga, Koji Nakano
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Publication number: 20200255974Abstract: A method of manufacturing a crystalline gallium nitride film, including: a growth step in which a GaCl3 gas, a halogen gas, an NH3 gas, and a carrier gas consisting of one or more inert gases are supplied onto a substrate, thereby growing a crystalline gallium nitride film on the substrate, wherein a partial pressure ratio [PHalogen/PGaCl3] is defined as a ratio of a partial pressure of the halogen gas with respect to a partial pressure of the GaCl3 gas on the substrate in the growth step, and the partial pressure ratio [PHalogen/PGaCl3] is 0.20 or more.Type: ApplicationFiled: September 13, 2018Publication date: August 13, 2020Applicants: National University Corporation Tokyo University of Agriculture and Technology, Taiyo Nippon Sanso CorporationInventors: Akinori Koukitu, Hisashi Murakami, Akira Yamaguchi
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Publication number: 20200239630Abstract: The present invention provides an aliphatic polycarbonate that can be thermally decomposed (dewaxed) at a relatively low temperature. The aliphatic polycarbonate comprises a constituent unit represented by formula (1): wherein R1, R2, and R3 are identical or different, and each represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 15 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 20 carbon atoms; R4 represents a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 20 carbon atoms; and n is an integer of 0 to 3.Type: ApplicationFiled: September 3, 2018Publication date: July 30, 2020Applicants: National University Corporation Tokyo University of Agriculture and Technology, Sumitomo Seika Chemicals Co., Ltd.Inventors: Koji NAKANO, Kiyoshi NISHIOKA