Abstract: A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.

Abstract: A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.

Abstract: A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.

Abstract: Provided is a resonant network for plasma power supply, which is connected between a power supply unit and an output unit. The resonant network includes a resonant inductor connected in series with the power supply unit, a resonant capacitor connected in parallel with the output unit and connected in series with the resonant inductor, and a passive element connected in series with the output unit and the resonant inductor and connected in parallel with the resonant capacitor.

Abstract: A power supply apparatus able to control an output current for maintaining plasma in a plasma generator includes: a switching power supply including a rectifier, an inverter, and a phase shifter; a plasma source connected to the switching power supply and generating the plasma in the plasma generator; a resonance network connected between the switching power supply and the plasma source and including a resonance inductor connected to a primary winding in series and a resonance capacitor connected to the plasma source in parallel and connected to the resonance inductor in series; and a control unit controlling the switching power supply in order to phase-shift a voltage and a current provided to the resonance network.

Abstract: A remote plasma generator includes a body, a driver, and a protection tube. The body includes a gas injection port, a plasma exhaust port, and a plasma generation pipe through which discharge gas or plasma flow. The driver is coupled to the body and generates a magnetic field and plasma in the body. The protection tube is at an inner side of the plasma generation pipe to protect the plasma generation pipe from plasma.

Abstract: A remote plasma generator includes a body, a driver, and a protection tube. The body includes a gas injection port, a plasma exhaust port, and a plasma generation pipe through which discharge gas or plasma flow. The driver is coupled to the body and generates a magnetic field and plasma in the body. The protection tube is at an inner side of the plasma generation pipe to protect the plasma generation pipe from plasma.

Abstract: An apparatus for detecting an arc in a plasma chamber is designed to detect the respective voltage and current values of RF power supplied to the plasma chamber and calculate the ratio of the voltage and current values to accomplish a required control of the supplying of the power. When it is determined that the arc is generated, the apparatus rapidly controls the supplying of the power to prevent damages on the plasma chamber and contaminations on the materials to be processed due to the generation of the arc.

Abstract: A two way gate valve includes a valve chamber having a first entrance coupled with a first chamber, a second entrance coupled with a second chamber, and an openable and closable chamber cover; a moving module having a first sealing plate for sealing the first entrance, a second sealing plate for sealing the second entrance, and a moving module body to which the first and the second sealing plates are mounted; a push-pull module having a push-pull module body coupled with the moving module body such that the moving module body can linearly move, a first operating body for moving the moving module in a first entrance direction such that the first sealing plate seals the first entrance, and a second operating body for moving the moving module in a second entrance direction such that the second sealing plate seals the second entrance.

Abstract: There are provided a substrate transferring apparatus for continuously loading/unloading a plurality of substrates in and from a process chamber to reduce time spent on transferring the substrates and to improve productivity and a substrate processing system using the same. The substrate transfer apparatus is installed in the transfer chamber and transfers substrates between first and second process chambers which is positioned lateral sides of the transfer chamber and a load rock chamber. The substrate transfer apparatus includes a driving unit to supply a rotational force, a spindle connected to the driving unit, first swivel plate arms to load/unload substrate to/from first process chamber, and second swivel plate arms to load/unload substrate to/from second process chamber. Since substrates before and after being processed are rapidly exchanged during the simultaneous or continuous process of plural substrates, processing rate increases and overall productivity can be increased.

Abstract: There is provided a plasma reactor with an internal transformer. The plasma reactor comprises: a plasma chamber with a gas inlet and a gas outlet, for providing a plasma discharging space; one or more core cylinder jackets for providing a core storage space in the plasma discharging space and forming a plasma centralized channel and a plasma decentralized channel by including one or more through-apertures; and one or more transformers each including a magnetic core with primary winding surrounding the through-aperture and installed in the core storage space, wherein the plasma discharging space comprises one or more first spatial regions to form the plasma centralized channel and one or more second spatial regions to form the plasma decentralized channel. In the plasma reactor, since the transformer is installed in the plasma chamber, energy is transferred with almost no loss from the transformer to the plasma discharging space and therefore the energy transfer efficiency is very high.

Abstract: There is provided an inductively coupled plasma reactor. The inductively coupled plasma reactor is connected to a transformer with multiple magnetic cores and a primary winding, to transfer an electromotive force for plasma discharge to a plasma discharge chamber of a reactor body. Parts of magnetic core positioned in side the plasma discharge chamber are protected by being entirely covered by a core protecting tube. The primary winding is electrically connected to a power supply source providing radio frequency power. In the inductively coupled plasma reactor, since a number of magnetic core cross sectional parts are positioned inside the plasma discharge chamber, the efficiency of transferring the inductively coupled energy to be connected with plasma is very high.

Abstract: An apparatus for detecting an arc in a plasma chamber is designed to detect the respective voltage and current values of RF power supplied to the plasma chamber and calculate the ratio of the voltage and current values to accomplish a required control of the supplying of the power. When it is determined that the arc is generated, the apparatus rapidly controls the supplying of the power to prevent damages on the plasma chamber and contaminations on the materials to be processed due to the generation of the arc.

Abstract: A two way gate valve includes a valve chamber having a first entrance coupled with a first chamber, a second entrance coupled with a second chamber, and an openable and closable chamber cover; a moving module having a first sealing plate for sealing the first entrance, a second sealing plate for sealing the second entrance, and a moving module body to which the first and the second sealing plates are mounted; a push-pull module having a push-pull module body coupled with the moving module body such that the moving module body can linearly move, a first operating body for moving the moving module in a first entrance direction such that the first sealing plate seals the first entrance, and a second operating body for moving the moving module in a second entrance direction such that the second sealing plate seals the second entrance.

Abstract: A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

Abstract: A capacitively coupled plasma reactor includes a plasma reactor, a capacitive coupling electrode assembly including a plurality of capacitive coupling electrodes to induce plasma discharge inside the plasma reactor, a main power supply source to supply radio-frequency power, and a distribution circuit to receive the radio-frequency power supplied from the main power supply source and to distribute the received radio-frequency power to the plurality of capacitive coupling electrodes.

Abstract: A plasma source with discharge inducing bridges and a plasma processing system using the same. The plasma source may be constructed with a number of discharge inducing bridges, each discharge inducing bridge containing a magnetic core with a primary winding of a transformer. The discharge inducing bridges are positioned so as to face a susceptor. Each discharge inducing bridge is a hollow tube. When the electrical current of the primary winding of the transformer is driven, magnetic flux is induced to the magnetic core, so that inductive coupled plasma is formed around the discharge inducing bridges, and a plasma discharge is evenly induced horizontally/vertically along the discharge inducing bridges, so that uniform large-area high-density plasma is generated.

Abstract: A plasma reaction chamber includes a chamber housing having two inner connection passages for connecting two vacuum chambers to other vacuum chambers. Two vacuum chambers and two inner connection passages form a continuous discharge path. At least one magnetic core is mounted in two vacuum chambers or two inner connection passages, and a coil connected to a power source is wounded around the magnetic core so as to transfer induced electromotive force to the continuous discharge path. The plasma reaction chamber is configured so that at least two vacuum chambers are integrated in a multiple arrangement, and common parts are shared in common, so that at least two substrates may be treated in parallel at the same time, thereby improving productivity per unit area and making it possible to construct a low-cost and high-efficient substrate treatment system.

Abstract: A system for driving a multi-lamp, and more particularly to, a system for driving a multi-lamp for driving a parallel arrangement of a plurality of discharge lamps and a method of driving a plurality of discharge lamps and a method thereof.

Abstract: There is provided an inductively coupled plasma reactor. The inductively coupled plasma reactor is connected to a transformer with multiple magnetic cores and a primary winding, to transfer an electromotive force for plasma discharge to a plasma discharge chamber of a reactor body. Parts of magnetic core positioned in side the plasma discharge chamber are protected by being entirely covered by a core protecting tube. The primary winding is electrically connected to a power supply source providing radio frequency power. In the inductively coupled plasma reactor, since a number of magnetic core cross sectional parts are positioned inside the plasma discharge chamber, the efficiency of transferring the inductively coupled energy to be connected with plasma is very high.