Abstract: The noise insulating material comprises a binder resin, sound barrier filler, liquid rubber and fire-resistant fiber. The incorporation of fire-resistant fiber in the binder resin reinforces the resin matrix to prevent melting and shedding of the binder resin upon exposure to a flame. Being qualified as a quasi-incombustible material, this noise insulating material can be used in a broad range of applications.

Abstract: There is provided an insoluble anode for producing manganese dioxide by electrolysis characterized in that the surface layer or the entire anode is made of a titanium alloy of from 0.5 to less than 15 percent by weight of nickel, the remainder being titanium and unavoidable impurities. The titanium alloy preferably has thereon Ti.sub.2 Ni particles 300 .mu.m or finer in size dispersed uniformly at the rate of at least 10,000 particles per square millimeter of the anode surface area, whereby the growth of a passive state film is prevented.

Abstract: A laminated film comprising a thin film of single crystal YBa.sub.2 Cu.sub.3 O.sub.7-x having the (001) plane in the direction parallel with the film surface and a continuous insulating ultrathin layer of MgO which is formed on said superconductor film and has a thickness of not larger than 10.ANG. and the (001) plane in a direction parallel with the film surface is provided.

Abstract: A method for producing compound semiconductor single crystal substrates which comprises the following steps, wafers of a compound semiconductor single crystal grown by the LEC method are installed in an evacuated and sealed quartz ampoule and subjected to a first annealing step at the predetermined temperature for the predetermined period, then the wafers are gradually cooled down to room temperature at the predetermined cooling speed, the cooled wafers are then subjected to etching, the etched wafers are subjected to a second annealing step at the predetermined temperature for the predetermined period in a non-oxidizing atmosphere, and finally, the wafers are gradually cooled down to room temperature.

Abstract: A process for producing methylnaphthalenes is disclosed, comprising subjecting a fraction containing at least 50% by volume of components within the boiling range of 195.degree.-215.degree. C., which is obtained by distilling a raffinate resulting from the recovery of normal paraffins from a hydrodesulfurized kerosene fraction, to reforming reaction and then recovering methylnaphthalenes from the product oil.

Abstract: A non-magnetic substrate used for a magnetic head comprising a pair of non-magnetic substrates, and a magnetic layer structure sandwiched between the pair of non-magnetic substrates. The magnetic layer structure is comprised, of alternately laminated magnetic layers and intermediate insulating layers. The invention discloses for the substrate material a composition expressed by Zn.sub.x M.sub.y Co.sub.2-x-y O.sub.2, with the proviso that M is Mn or Ni, 0.ltoreq.x.ltoreq.0.4, 0.4.ltoreq.y.ltoreq.1.0, 0.8.ltoreq.x+y.ltoreq.1.0, or CO.sub.x Ni.sub.2-x O.sub.2, with the proviso that 0.2.ltoreq.x.ltoreq.1.8, and having a rock-salt structure.

Abstract: This invention permits, in a colored galvanized coating using Ti--Zn, Mn--Zn, Ti--Mn--Zn, (Ti, Mn)--(Cu, Ni, Cr)--Zn, etc., to clearly and stably develop yellow, purple, green, blue or other color by controlling the composition of a galvanizing bath and oxidizing conditions. Further, gold, dark red, olive gray and iridescence color which have not yet obtained can be developed. The color development effected by this invention is clearer than conventional. Instead of galvanizing, the spraying process may be adopted. The surface painting on the colored zinc coating is effective.

Abstract: There is provided a film carrier comprising a resin base film and a rolled copper foil laminated thereon, said rolled copper foil forming leads for mounting semiconductor chips or other electronic components in place, characterized in that said rolled copper foil is made of a copper alloy composition consisting essentially of a total of 0.005 to 1.5% by weight of one or two or more selected from a group consisting of______________________________________ P 0.005-0.05 wt %, B 0.005-0.05 wt %, Al 0.01-0.5 wt %, As 0.01-0.5 wt %, Cd 0.01-0.5 wt %, Co 0.01-0.5 wt %, Fe 0.01-0.5 wt %, In 0.01-0.5 wt %, Mg 0.01-0.5 wt %, Mn 0.01-0.5 wt %, Ni 0.01-0.5 wt %, Si 0.01-0.5 wt %, Sn 0.01-0.5 wt %, Te 0.01-0.5 wt %, Ag 0.01-1 wt %, Cr 0.01-1 wt %, Hf 0.01-1 wt %, Zn 0.01-1 wt % and Zn 0.01-1 wt % ______________________________________and the remainder Cu with inevitable impurities, preferably with oxygen content of not more than 50 ppm.

Abstract: An Fe-Co base magnetic material comprising periodically laminated structure which consists of an Fe layer which has the bcc (110) plane in the lamination plane, an Fe-Co alloy layer which has the bcc (110) plane in the lamination plane and is laminated on said Fe layer and a Co layer which has the hcp (101) plane in the lamination plane and is laminated on said Fe-Co alloy layer, which laminated structure has controlled magnetostriction.

Abstract: A method of producing an anode material for electrolytic use comprises heat-treating a titanium alloy which consists of 0.1-10 wt % of nickel and the remainder of titanium and unavoidable impurities and which has been thermally affected above its beta transformation point, at a temperature of 400.degree.-800.degree. C. during the process. Alternatively, the alloy is cold-rolled to a working degree of at least 10 percent prior to the heat treatment. The anode material is made to have a surface roughness, Rmax, of at least 100 .mu.m, a yield strength of at least 30 kgf/mm.sup.2, a Vickers hardness of at least 150, and a flatness of at most 6 mm per meter.

Abstract: This invention provides novel biphenyl compounds represented by the following general formula (I): ##STR1## (wherein R is an alkyl group, A is selected from the single bond, --COO--, --OCO--, --OCOO-- and --CO--, and each of m and n is an integer of 1 or more, provided m<n), optically active bodies thereof, liquid crystal compositions containing at least one of these compounds, light switching elements comprising at least one of the above compounds as a constituent element, and a method of producing the compound.

Abstract: A process for production of dimethylnaphthalenes is disclosed, comprising subjecting a raffinate resulting from the recovery of normal paraffins from a hydrodesulfurized kerosene fraction to reforming reaction and then recovering dimethylnaphthalenes from the product oil.

Abstract: A tin or tin alloy plated article, particularly a film carrier which is protected against the generation of tin whiskers characterized in having an indium plated layer on the substrate thereof and a tin or tin alloy plated layer on said indium plated layer. There are also disclosed a coating process therefor as well as a novel and unique electroless indium plating bath therefor, said indium plating bath is an acidic, electroless plating bath characterized by including an indium salt and thiourea or a derivative thereof.

Abstract: Film carriers for mounting electronic components such as semiconductor chips thereon have lead portions plated with a tin or tin alloy layer and further with an indium layer. The tin or tin alloy layer is 0.1-3 .mu.m thick and the indium layer 0.01-2 .mu.m thick. Alternatively, the leads have a tin or tin alloy plated portion having an indium diffusion layer, with an indium content of 0.2-50 wt %. The carriers are manufactured by a method which comprises plating the leads with tin or a tin alloy and then with indium, with or without heat treatment at 50.degree.-150.degree. C. to form an indium diffusion layer in the tin or tin alloy coating. Plating is done by electroless plating.

Abstract: The present invention relates to a method for producing InP single crystals containing impurities such as Fe, Co, Ti, Cr or the like by cutting the single crystals into wafers or blocks and heat-treating the cut wafers or blocks at temperatures ranging from 400.degree. C. to 690.degree. C. Further, the invention is related to a method for producing compound semiconductor devices employing Fe-doped InP single crystals as the substrate of the device. In this method, the InP single crystals are cut into wafers and the cut wafers are heat-treated at temperatures ranging from 400.degree. C. to 690.degree. C. Further, the wafers are implanted with ions and heat-treated at 690.degree. C. or lower to activate the implanted ions. These methods ensure to produce the single crystals and the compound semiconductor devices which have superior electrical properties.

Abstract: A method for purifying a macrocyclic ketone is disclosed which comprises light-irradiating a macrocyclic ketone containing a macrocyclic diketone as an impurity. Preferably, the macrocyclic ketone as light-irradiated is treated with an active charcoal so as to elevate the purity of the resulting macrocyclic ketone. For light-irradiation, the macrocyclic ketone may be in the form of an alcohol solution.

Abstract: There is provided a film carrier comprising a resin base film and a rolled copper foil laminated thereon, said rolled copper foil forming leads for mounting semiconductor chips or other electronic components in place, characterized in that said rolled copper foil is made of a copper alloy composition consisting essentially of a total of 0.005 to 1.5% by weight of one or two or more selected from a group consisting of______________________________________ P 0.005-0.05 wt %, B 0.005-0.05 wt %, Al 0.01-0.5 wt %, As 0.01-0.5 wt %, Cd 0.01-0.5 wt %, Co 0.01-0.5 wt %, Fe 0.01-0.5 wt %, In 0.01-0.5 wt %, Mg 0.01-0.5 wt %, Mn 0.01-0.5 wt %, Ni 0.01-0.5 wt %, Si 0.01-0.5 wt %, Sn 0.01-0.5 wt %, Te 0.01-0.5 wt %, Ag 0.01-1 wt %, Cr 0.01-1 wt %, Hf 0.01-1 wt %, Zn 0.01-1 wt % and Zn 0.01-1 wt % ______________________________________and the remainder Cu with inevitable impurities, preferably with oxygen content of not more than 50 ppm.

Abstract: A process for producing a titanium material with excellent corrosion resistance, which comprises first applying a degree of cold working of 10% or more of the total working reduction while causing an oil to exist on the surface of the titanium material during cold working thereof and then subjecting the titanium material to in-situ heat treatment at a temperature of 300.degree. C. or higher, thereby forming a layer with excellent corrosion resistance containing at least one of Ti.sub.2 N, TiC and Ti(CN) on the titanium material surface.

Abstract: Biologically active peptides each having an activity to inhibit multiplication of toxoplasma and having a structure composed of amino acid sequence by the formula Gly-Glu-Glu-Glu-Glu-Glu; Glu-Glu-Glu-Glu-Glu; Asp-Asp-Asp-Asp-Asp; or Ala-Asp-Asp-Asp-Asp-Asp. These peptides are estimated to form active units or cores of Obioactin. The peptides may be applied in various dosage forms to human being and animals as immunoregulators against attack by toxoplasma, since they exhibit no specie specificity and have Toxo-GIF activities of 10 or more times on weight basis, and 40 or more time on molar basis, of that of the crude Obioactin.

Abstract: A group III-V digital logic circuit which includes either at least two enhancement type metal semiconductor field effect transistors and one load element or two first type field effect transistors having a first threshold voltage and two second type field effect transistors having a second threshold voltage, for providing a logic operation. The second threshold voltage is less than zero and is less than the first threshold voltage. The group III-V digital logic circuit can be formed as an integrated circuit on, in particular, a GaAs substrate. The field effect transistor can be either a metal semiconductor field effect transistor or a junction field effect transistor.