Patents Assigned to Nippon Tungsten Co., Ltd.
  • Patent number: 10859088
    Abstract: Provided is a TiCx—(Ti—Mo) sliding material having a binder phase made of a Ti—Mo alloy, and a hard phase containing TiCx, wherein the TiCx—(Ti—Mo) sliding material satisfies all the following conditions: (1) a total area of the binder phase and the hard phase is 90% or more of an area of a field of view; (2) a total area of the binder phase is 15% or more and 20% or less of the area of the field of view; (3) in the binder phase, a total area of the binder phase having a diameter equivalent to 10 ?m or more and 50 ?m or less; (4) in the binder phase, a total area of the binder phase having a diameter equivalent to less than 10 ?m; and (5) a Mo concentration in the binder phase is 25 wt % or more and 35 wt % or less.
    Type: Grant
    Filed: February 23, 2017
    Date of Patent: December 8, 2020
    Assignees: EBARA CORPORATION, NIPPON TUNGSTEN CO., LTD.
    Inventors: Nobuaki Ito, Kenichi Sugiyama, Hiroshi Yakuwa, Norio Takahashi, Makoto Komiya, Kenji Fujimoto
  • Patent number: 10493649
    Abstract: A rotary cutter includes a die cut roll having a cutting blade, and an anvil roll positioned so that a roll surface faces the cutting blade. The roll surface of the anvil roll is made of a hard material including at least either cemented carbide or cermet. The Young's modulus of the hard material is between 300 GPa and 400 GPa. The Vickers hardness (Hv) of the hard material is 800 or more.
    Type: Grant
    Filed: October 3, 2017
    Date of Patent: December 3, 2019
    Assignee: NIPPON TUNGSTEN CO., LTD.
    Inventors: Takahiro Yoshihara, Shigeki Mouri
  • Patent number: 10391663
    Abstract: A cutter roll and an anvil roll, with which it is possible to control deformation in the axial direction, and a rotary cutter having the same. A roll 101, 210 for a rotary cutter includes: a barrel portion having a circumferential surface and a pair of end surfaces located respectively at opposite ends of the circumferential surface; a pair of first depressions 113, 213 having a ring shape or a cylindrical shape and located respectively at the pair of end surfaces of the barrel portion, the pair of first depressions each having a depth direction that is parallel to an axis of the barrel portion; a pair of first bearings 152, 252 located respectively in the pair of first depressions and being in contact with outer walls of the first depressions; and a pair of first bearing boxes 156 located on an outside of the pair of first depressions and having support portions 151b, 251b to be in contact with a support frame or a pressure mechanism, the pair of first bearing boxes supporting the respective bearings.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: August 27, 2019
    Assignee: NIPPON TUNGSTEN CO., LTD.
    Inventors: Yasunori Tsuji, Yohei Nakashima, Kenji Nakahara
  • Publication number: 20180311852
    Abstract: A rotary cutter comprises a die cut roll having a cutting blade, and an anvil roll positioned so that a roll surface faces the cutting blade. The roll surface of the anvil roll is made of a hard material including at least either cemented carbide or cermet. The Young's modulus of the hard material is between 300 GPa and 400 GPa. The Vickers hardness (Hv) of the hard material is 800 or more.
    Type: Application
    Filed: October 3, 2017
    Publication date: November 1, 2018
    Applicant: NIPPON TUNGSTEN CO., LTD.
    Inventors: Takahiro YOSHIHARA, Shigeki MOURI
  • Patent number: 9773652
    Abstract: Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering.
    Type: Grant
    Filed: June 29, 2012
    Date of Patent: September 26, 2017
    Assignees: UBE MATERIAL INDUSTRIES, LTD., NIPPON TUNGSTEN CO., LTD.
    Inventors: Satoru Sano, Yoshihiro Nishimura, Takayuki Watanabe, Yuuzou Katou, Akira Ueki, Shinzo Mitomi, Masanobu Takasu, Yusuke Hara, Takaaki Tanaka
  • Patent number: 9293156
    Abstract: An AlTiC-based substrate suitable for a thin-film magnetic head is provided. The Al2O3—TiC based substrate for a thin-film magnetic head including an Al2O3 phase and a TiC phase, wherein a c-axis lattice constant of the Al2O3 phase is 12.992 ? or more and 12.998 ? or less, and a lattice constant of the TiC phase is 4.317 ? or more and 4.325 ? or less.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: March 22, 2016
    Assignees: NIPPON TUNGSTEN CO., LTD., HITACHI METALS, LTD.
    Inventors: Yusuke Hara, Shinzoh Mitomi, Shigeru Matsuo, Hidetaka Sakumichi
  • Patent number: 9293154
    Abstract: An AlTiC-based substrate suitable for a thin-film magnetic head is provided. The Al2O3—TiC based substrate for a thin-film magnetic head including an Al2O3 phase and a TiC phase, wherein a c-axis lattice constant of the Al2O3 phase is 12.992 ? or more and 12.998 ? or less, and a lattice constant of the TiC phase is 4.297 ? or more and 4.315 ? or less.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: March 22, 2016
    Assignees: NIPPON TUNGSTEN CO., LTD., HITACHI METALS, LTD.
    Inventors: Yusuke Hara, Shinzoh Mitomi, Shigeru Matsuo, Hidetaka Sakumichi
  • Patent number: 9293155
    Abstract: An AlTiC-based substrate suitable for a thin-film magnetic head is provided. The Al2O3—TiC based substrate for a thin-film magnetic head including an Al2O3 phase and a TiC phase, wherein a c-axis lattice constant of the Al2O3 phase is 12.985 ? or more and 12.992 ? or less, and a lattice constant of the TiC phase is 4.297 ? or more and 4.325 ? or less.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: March 22, 2016
    Assignees: NIPPON TUNGSTEN CO., LTD., HITACHI METALS, LTD.
    Inventors: Yusuke Hara, Shinzoh Mitomi, Shigeru Matsuo, Hidetaka Sakumichi
  • Patent number: 9120704
    Abstract: A dielectric layer for an electrostatic chuck is formed of a ceramic material having a first phase including aluminum oxide and a second phase including composite carbonitride (Ti, Me)(C, N) that contains titanium as fine grains. The Me represents a transition element and metals of Group 4 to Group 6 such as Mo and W. The ceramic material that includes the second phase by 0.05 vol % to 2.5 vol % has a volume resistivity value of about 108 to 1013 (?·cm) necessary for a Johnsen-Rahbek type electrostatic chuck.
    Type: Grant
    Filed: October 15, 2013
    Date of Patent: September 1, 2015
    Assignees: Nippon Tungsten Co., Ltd., Shinko Electric Industries Co., Ltd., Trek Holding Co., Ltd., Japan Fine Ceramics Center
    Inventors: Kouta Tsutsumi, Mitsuyoshi Nagano, Koki Tamagawa, Norio Shiraiwa, Tadayoshi Yoshikawa, Miki Saito, Toshio Uehara, Hideaki Matsubara, Tetsushi Matsuda
  • Patent number: 9079800
    Abstract: A composite ceramic body which includes three phases consisting of a MgO phase, a YAP (YAlO3) phase and a spinel (MgAl2O4) phase. This composite ceramic body has a plasma resistance greater than that of alumina and approximately equal to that of MgO. Mechanical properties, such as hardness and bending strength, of the composite ceramic body, are approximately equal or superior to those of Al2O3. A raw material cost and a manufacturing cost thereof are lower than those of a rare-earth oxide. Further, electric conductive particles may be added thereto to lower an electrical resistivity. The composite ceramic body is suitably usable as component parts for a semiconductor manufacturing equipment.
    Type: Grant
    Filed: April 17, 2013
    Date of Patent: July 14, 2015
    Assignee: NIPPON TUNGSTEN CO., LTD
    Inventors: Kouta Tsutsumi, Ryou Matsuo, Mitsuyoshi Nagano
  • Patent number: 8758652
    Abstract: A tungsten cathode material to be used for TIG welding, plasma spraying, plasma cutting, electro-discharge machining, discharge lamps, and the like is improved; use of the radioactive element thorium is reduced; and a long life and a high performance are realized. In a tungsten cathode material, oxide particles containing an oxide or oxides of at least one selected from the group consisting of Sm, Nd, Gd, and La in a total amount of 50 vol % or more are dispersed, the oxide particles having an average particle diameter d satisfying the relationship 0<d?2.5 ?m. Given a volume fraction f (vol %) of the total amount of the oxide particles in the tungsten cathode material, 0.083?f/I holds when a current I(A) such that 0<I?40 A is applied to an electrode being made of the tungsten cathode material.
    Type: Grant
    Filed: October 18, 2010
    Date of Patent: June 24, 2014
    Assignee: Nippon Tungsten Co., Ltd.
    Inventors: Akira Matsuo, Yasutsugu Ueno, Keiji Hara, Keiichi Ozuka, Shuichi Teramoto
  • Publication number: 20140144775
    Abstract: Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering.
    Type: Application
    Filed: June 29, 2012
    Publication date: May 29, 2014
    Applicants: NIPPON TUNGSTEN CO., LTD., UBE MATERIALS INDUSTRIES, LTD.
    Inventors: Satoru Sano, Yoshihiro Nishimura, Takayuki Watanabe, Yuuzou Katou, Akira Ueki, Shinzo Mitomi, Masanobu Takasu, Yusuke Hara, Takaaki Tanaka
  • Publication number: 20140103612
    Abstract: A dielectric layer for an electrostatic chuck is formed of a ceramic material having a first phase including aluminum oxide and a second phase including composite carbonitride (Ti, Me)(C, N) that contains titanium as fine grains. The Me represents a transition element and metals of Group 4 to Group 6 such as Mo and W. The ceramic material that includes the second phase by 0.05 vol % to 2.5 vol % has a volume resistivity value of about 108 to 1013 (?·cm) necessary for a Johnsen-Rahbek type electrostatic chuck.
    Type: Application
    Filed: October 15, 2013
    Publication date: April 17, 2014
    Applicants: NIPPON TUNGSTEN CO., LTD., JAPAN FINE CERAMICS CENTER, TREK HOLDING CO., LTD., SHINKO ELECTRIC INDUSTRIES CO., LTD.
    Inventors: Kouta Tsutsumi, Mitsuyoshi Nagano, Koki Tamagawa, Norio Shiraiwa, Tadayoshi Yoshikawa, Miki Saito, Toshio Uehara, Hideaki Matsubara, Tetsushi Matsuda
  • Publication number: 20140017114
    Abstract: Provided is a cathode material which becomes an alternative material of a cathode material formed of a W—ThO2 alloy and is formed of a tungsten alloy that does not include thorium which is a radioactive element. When particles of a rare earth oxide and tungsten carbide are finely dispersed in a tungsten cathode material used as a discharge cathode material used in TIG, plasma spraying, plasma cutting, electrical discharge machining, discharge lamps and the like, reduction and diffusion of the rare earth oxide are accelerated, and supply of rare earth elements to a cathode surface is ensured, thereby improving discharge characteristics.
    Type: Application
    Filed: March 22, 2012
    Publication date: January 16, 2014
    Applicant: NIPPON TUNGSTEN CO., LTD.
    Inventors: Akira Matsuo, Yasutsugu Ueno, Yusuke Kai
  • Publication number: 20130299749
    Abstract: A composite ceramic body which includes three phases consisting of a MgO phase, a YAP (YAlO3) phase and a spinel (MgAl2O4) phase. This composite ceramic body has a plasma resistance greater than that of alumina and approximately equal to that of MgO. Mechanical properties, such as hardness and bending strength, of the composite ceramic body, are approximately equal or superior to those of Al2O3. A raw material cost and a manufacturing cost thereof are lower than those of a rare-earth oxide. Further, electric conductive particles may be added thereto to lower an electrical resistivity. The composite ceramic body is suitably usable as component parts for a semiconductor manufacturing equipment.
    Type: Application
    Filed: April 17, 2013
    Publication date: November 14, 2013
    Applicant: NIPPON TUNGSTEN CO., LTD
    Inventor: NIPPON TUNGSTEN CO., LTD
  • Publication number: 20130264314
    Abstract: In electro-discharge machining by using an electro-discharge machining electrode of a Cu(Ag)—W(Mo) material, the machining speed, the electrode wear ratio, and the surface roughness of a work piece are improved. For this purpose, to the Cu(Ag)—W(Mo) material, borates of an element selected from a group (M3) consisting of Mg, Ca, Sr, Ba, Sc, Y, and lanthanide and an iron group metal are added by appropriate amounts. As the borate compounds, particularly, it is preferred to use borate compounds expressed by M32B2O5 and M3B2O4.
    Type: Application
    Filed: October 17, 2011
    Publication date: October 10, 2013
    Applicant: NIPPON TUNGSTEN CO., LTD.
    Inventors: Hirofumi Yamaguchi, Yuusuke Uchida
  • Patent number: 8486529
    Abstract: There is provided fine metal carbide particles which do not require pulverization of an initial material, a reaction intermediate and a product that causes the contamination with metallic impurities, which can promote a carbonization reaction uniformly at a lower temperature than in the past, and which can be manufactured at a low cost; and a method of manufacturing the same. The fine metal carbide particles are prepared by heat-treating, in a nonoxidizing atmosphere or a vacuum atmosphere, a solid obtained by drying an aqueous metal complex solution containing a water-soluble metal compound, and a low-molecular-weight water-soluble organic compound having one or more functional group(s) selected from the group consisting of amino group, hydroxyl group and carboxyl group, and having at least one of oxygen and nitrogen as heteroatom(s).
    Type: Grant
    Filed: January 6, 2010
    Date of Patent: July 16, 2013
    Assignees: Fukuoka Prefecture, Nippon Tungsten Co., Ltd.
    Inventors: Yoko Taniguchi, Akihisa Makino, Kunitaka Fujiyoshi, Masashi Arimura, Shuji Ueno, Mitsui Koga
  • Patent number: 8471169
    Abstract: Provided is an electrode (1) which has a double structure including Cu or a Cu alloy as an electrode body (2) and a core material (3) made of W, Mo, a W-based alloy, or a Mo-based alloy embedded in a surface of the electrode body (2) which is abutted against a material to be welded, the core material (3) being formed by using W, Mo, the W-based alloy, or the Mo-based alloy which is in the form of a fibrous structure extended by sintering, swaging, and annealing in an electrode axis direction, the fibrous structure having a horizontal cross-sectional average particle diameter of 50 ?m or more and an aspect ratio of 1.5 or more. The electrode (1) can be used as an inexpensive electrode obtained by suppressing particle dropping/attrition and defects in electrodes for spot welding, in which heat and pressure are applied repeatedly, stably enhancing durability.
    Type: Grant
    Filed: June 6, 2007
    Date of Patent: June 25, 2013
    Assignees: Nippon Tungsten Co., Ltd., Nisshin Steel Co., Ltd.
    Inventors: Shingo Mukae, Kenji Okamura, Shuichi Teramoto, Jun Kurobe, Hiroshi Asada, Shouji Inoue, Shigeo Matsubara
  • Patent number: 8454933
    Abstract: The invention provides a polycrystal magnesium oxide (MgO) sintered body which is capable of having a sintered density close to a theoretical density thereof. The MgO sintered body exhibits excellent mechanical properties and heat conductivity, while reducing contamination of an atmosphere due to gas generation. The invention also provides a production method for the sintered body. The polycrystal MgO sintered body has a unique crystalline anisotropy in which (111) faces are oriented along a surface applied with a uniaxial pressure at a high rate. The polycrystalline MgO sintered body is obtained by a method which includes the steps of: sintering an MgO raw material powder, having a particle size of 1 ?m or less, under a uniaxial pressure and then subjecting the sintered powder to a heat treatment under an atmosphere containing 0.05 volume % or more of oxygen, at a temperature of 1273 K or more for 1 minute or more.
    Type: Grant
    Filed: January 27, 2009
    Date of Patent: June 4, 2013
    Assignees: Nippon Tungsten Co., Ltd., Ube Material Industries, Ltd.
    Inventors: Mitsuyoshi Nagano, Masanobu Takasu, Yo Arita, Satoru Sano
  • Publication number: 20120091922
    Abstract: A tungsten cathode material to be used for TIG welding, plasma spraying, plasma cutting, electro-discharge machining, discharge lamps, and the like is improved; use of the radioactive element thorium is reduced; and a long life and a high performance are realized. In a tungsten cathode material, oxide particles containing an oxide or oxides of at least one selected from the group consisting of Sm, Nd, Gd, and La in a total amount of 50 vol % or more are dispersed, the oxide particles having an average particle diameter d satisfying the relationship 0<d?2.5 ?m. Given a volume fraction f (vol %) of the total amount of the oxide particles in the tungsten cathode material, 0.083?f/I holds when a current I(A) such that 0<I?40 A is applied to an electrode being made of the tungsten cathode material.
    Type: Application
    Filed: October 18, 2010
    Publication date: April 19, 2012
    Applicant: NIPPON TUNGSTEN CO., LTD.
    Inventors: Akira Matsuo, Yasutsugu Ueno, Keiji Hara, Keiichi Ozuka, Shuichi Teramoto