Patents Assigned to NTT Electronics Technology Corporation
  • SOI substrate and method of producing the same
    Patent number: 5918136
    Abstract: A method of producing an SOI substrate having a single-crystal silicon layer on a buried oxide layer in an electrically insulating state from the substrate by implanting oxygen ions into a single crystal silicon substrate and practicing an anneal processing in an inert gas atmosphere at high temperatures to form the buried oxide layer. After the anneal processing in which the thickness of the buried oxide layer becomes a theoretical value in conformity with the thickness of the buried oxide layer formed by the implanted oxygen, the oxidation processing of the substrate is carried out in a high temperature oxygen atmosphere.
    Type: Grant
    Filed: August 19, 1997
    Date of Patent: June 29, 1999
    Assignees: Komatsu Electronic Metals Co., Ltd.,, Nippon Telegraph and Telephone Corporation, NTT Electronics Technology Corporation
    Inventors: Sadao Nakashima, Katsutoshi Izumi, Norihiko Ohwada, Tatsuhiko Katayama
  • SOI substrate and method of producing the same
    Patent number: 5658809
    Abstract: A method of producing an SOI substrate having a single-crystal silicon layer on a buried oxide layer in an electrically insulating state from the substrate by implanting oxygen ions into a single crystal silicon substrate and practicing an anneal processing in an inert gas atmosphere at high temperatures to form the buried oxide layer. After the anneal processing in which the thickness of the buried oxide layer becomes a theoretical value in conformity with the thickness of the buried oxide layer formed by the implanted oxygen, the oxidation processing of the substrate is carried out in a high temperature oxygen atmosphere.
    Type: Grant
    Filed: March 13, 1995
    Date of Patent: August 19, 1997
    Assignees: Komatsu Electronic Metals Co., Ltd., Nippon Telegraph and Telephone Corporation, NTT Electronics Technology Corporation
    Inventors: Sadao Nakashima, Katsutoshi Izumi, Norihiko Ohwada, Tatsuhiko Katayama