Abstract: An image sensor for capturing X-ray image data and optical image data includes an X-ray absorption layer and a plurality of photodiodes disposed in a semiconductor layer. The X-ray absorption layer is configured to emit photons in response to receiving X-ray radiation. The plurality of photodiodes disposed in the semiconductor layer is optically coupled to receive image light to generate the optical image data, and is optically coupled to receive photons from the X-ray absorption layer to generate X-ray image data.

Abstract: A pixel control circuit includes a first supply rail coupled to provide a first supply voltage. A second supply rail is coupled to provide a second supply voltage. A variable resistance circuit is coupled to the second power supply rail. A plurality of driver circuits is coupled between the first supply rail and the variable resistance circuit. Each one of the plurality of driver circuits is coupled to provide a control signal coupled to control a pixel circuit. The variable resistance circuit is coupled to provide a first resistance between the plurality of driver circuits and the second supply rail during a sampling operation of the pixel circuit. The variable resistance circuit is coupled to provide a second resistance between the plurality of driver circuits and the second supply rail during a non-sampling operation of the pixel circuit.

Abstract: An interface circuit includes a pre-driver coupled convert a single-ended signal to an intermediate differential signal. An output driver is coupled to convert the intermediate differential signal to an output differential signal having a variable output swing responsive to a mode select signal and a second supply voltage. A replica bias circuit is coupled to receive a first supply voltage, the mode select signal, and an open termination enable signal to generate a bias signal. An internal regulator is coupled to receive the bias signal and the first supply voltage to supply the second voltage to the output driver in response to the bias signal. An open termination circuit is coupled to an output of the output driver, and is coupled to receive the open termination enable signal to couple an internal load to the output of the output driver in response to the open termination enable signal.

Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.

Abstract: A probe card for use in testing a wafer and a method of making the probe card include a printed circuit board (PCB) formed with a conductor pattern and a probe head in proximity to the PCB, the probe head defining at least one hole through the probe head, and the probe head being made of an electrically insulating material. At least one conductive pogo pin is disposed respectively in the at least one hole, the pogo pin having a first end electrically connected to the conductor pattern on the PCB. At least one conductive probe pin includes a cantilever portion and a tip portion. The cantilever portion is in contact with and electrically connected to a second end of the pogo pin, and the tip portion is electrically connectable to the wafer to electrically connect the wafer to the conductor pattern on the PCB. The cantilever portion of the probe pin is fixedly attached to the probe head.

Abstract: A method of implementing Correlated Multi-Sampling (CMS) in an image sensor with improved analog-to-digital converter (ADC) linearity starts with an ADC circuitry included in a readout circuitry that generates a plurality of uncorrelated random numbers used as a plurality of ADC pedestals for sampling image data. A Successive Approximation Register (SAR) included in the ADC circuitry stores a different one of the ADC pedestals before each sampling of the image data. The ADC circuitry samples an image data from a row a plurality of times against plurality of ADC pedestals to obtain a plurality of sampled input data. The ADC circuitry converts each of the plurality of sampled input data from analog to digital, which includes performing a binary search using the SAR. Other embodiments are also described.

Abstract: A reset level in a pixel cell is boosted by switching ON a reset transistor of the pixel cell to charge the floating diffusion to a first reset level during a reset operation. A select transistor is switched from OFF to ON during the floating diffusion reset operation to discharge an output terminal of an amplifier transistor. The reset transistor is switched OFF after the output terminal of the amplifier transistor has been discharged in response to the switching ON of the select transistor. The output terminal of the amplifier transistor charges to a static level after being discharged. The floating diffusion coupled to the input terminal of the amplifier transistor follows the output terminal of the amplifier transistor across an amplifier capacitance coupled between the input terminal and the output terminal of the amplifier transistor to boost the reset level of the floating diffusion.

Abstract: An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network. The photosensitive capacitor includes an electrode, a conductive layer, a dielectric layer, and a photosensitive semiconductor material. The conductive layer is disposed around the electrode and the dielectric layer is formed between the conductive layer and the electrode. The photosensitive semiconductor material is for generating an image signal in response to image light and is disposed between the dielectric layer and the electrode. The transistor network is coupled to readout the image signal from the electrode of the photosensitive capacitor.

Abstract: A system and method for generating an image includes a plurality of imaging units coupled together and a system controller coupled to the plurality of imaging units for providing at least one signal to each of the plurality of imaging units. Each of the imaging units comprises: an image sensing unit for generating an in-situ image, each in-situ image being a portion of the image; an input for receiving the in-situ image; a composition unit for receiving a first composite image and producing a second composite image, the second composite image being a combination of the first composite image and the in-situ image; and an output at which the second composite image is provided.

Abstract: An image sensor includes a semiconductor material with a photodiode disposed in the semiconductor material, and a transfer gate disposed adjacent to an edge of the photodiode. A dielectric layer is also disposed between the semiconductor material and the transfer gate. A hard mask is disposed in an encapsulation layer and lateral bounds of the hard mask are coextensive with lateral bounds of the transfer gate. A first contact trench extends through the encapsulation layer and through the dielectric layer and contacts the semiconductor material. A second contact trench extends through the encapsulation layer and through the hard mask and contacts the transfer gate.

Abstract: A pixel cell includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed to the photodiode. A global shutter gate transistor disposed in the semiconductor material and is coupled to the photodiode to selectively deplete the image charge from the photodiode. A storage transistor is disposed in the semiconductor material to store the image charge. An optical isolation structure is disposed in the semiconductor material proximate to the storage transistor to isolate a sidewall of the storage transistor from stray light and stray charge in the semiconductor material outside of the storage transistor. The optical isolation structure is filled with tungsten.

Abstract: A color filter array includes a plurality of tiled minimal repeating units, each minimal repeating unit comprising an M×N set of individual filters. Each minimal repeating unit includes a plurality of imaging filters including individual filters having at least first, second, and third photoresponses, and at least one reference filter having a reference photoresponse, wherein the reference filter is positioned among the imaging filters and wherein the reference photoresponse transmits substantially the crosstalk spectrum that is not filtered from light incident on the color filter array by the plurality of imaging filters. Other embodiments are disclosed and claimed.

Abstract: An example imaging sensor system includes a backside-illuminated CMOS imaging array formed in a first semiconductor layer of a first wafer. The CMOS imaging array includes an N number of pixels, where each pixel includes a photodiode region. The first wafer is bonded to a second wafer at a bonding interface between a first metal stack of the first wafer and a second metal stack of the second wafer. A storage device is disposed in a second semiconductor layer of the second wafer. The storage device includes at least N number of storage cells, where each of the N number of storage cells are configured to store a signal representative of image charge accumulated by a respective photodiode region. Each storage cell includes a circuit element that is sensitive to light-induced leakage.

Abstract: A method for fabricating a sealed-sidewall device die may include filling grooves of a deeply-grooved device wafer with a sealant, yielding a sealed grooved device wafer. The method may also include forming grooves in a device wafer to yield the deeply-grooved device wafer. The step of forming grooves may include forming a groove that at least partially penetrates each layer of the device wafer. The method may further include masking each device of the deeply-grooved device wafer. A sealed-sidewall device die may include at least one layer including a device substrate layer, a sidewall including a respective surface of each layer of the at least one layer, a sidewall sealant covering the sidewall, and a device formed on the device substrate layer. The sidewall sealant optionally does not cover a top surface of the device. The top surface of the device may directly adjoin an ambient medium thereabove.

Abstract: A backside-illuminated photosensor array IC is formed in a thinned circuit wafer. Silicon is removed in at least one substrate-stripped zone where a doped edge-contact ring surrounds the substrate-stripped zone, the edge-contact ring formed in a same first side of the wafer as a plurality of transistors, and opposite to a backside of the wafer. Backside metal is disposed on the backside of the wafer, the backside metal having window openings over the photosensors, and having sidewalls contacting the edge-contact ring around the substrate-stripped zone. The edge contact region is formed in the first side of the device wafer before providing structural support and thinning the device wafer. Substrate-stripped zones, such as bondpad openings and guardring openings, are formed by removing silicon to expose the edge-contact region, and backside metal is deposited with sidewall metal at edges of the substrate-stripped zones and thereby contacting the edge-contact region.

Abstract: Systems and methods for generating images of an object having a known object velocity include imaging electromagnetic radiation from the object onto a sensor array of an imaging system, adjusting at least one of a shutter rate and a shutter direction of the imaging system in accordance with an image velocity of the image across the sensor array, and sampling output of the sensor array in accordance with the shutter rate and the shutter direction to generate the images. Systems and methods for generating images of an object moving through a scene include a first imaging system generating image data samples of the scene, a post processing system that analyzes the samples to determine when the object is present in the scene, and one or more second imaging systems triggered by the post processing system to generate one or more second image data samples of the object.

Abstract: A storage transistor with a storage region is disposed in a semiconductor material. A gate electrode is disposed in a bottom side of an interlayer proximate to the storage region, and a dielectric layer is disposed between the storage region and the gate electrode. An optical isolation structure is disposed in the interlayer and the optical isolation structure extends from a top side of the interlayer to the gate electrode. The optical isolation structure is also adjoining a perimeter of the gate electrode and contacts the gate electrode. A capping layer is disposed proximate to the top side of the interlayer and the capping layer caps a volume encircled by the optical isolation structure.

Abstract: Embodiments are disclosed of a color filter array including a plurality of tiled minimal repeating units. Each minimal repeating unit comprises a set of individual filters grouped into an array of M rows by N columns, wherein each set of individual filters includes a plurality of individual filters having at least first, second, third, and fourth spectral photoresponses. If M equals N, at least two directions within each minimal repeating unit include individual filters having all the spectral photoresponses, the at least two directions being selected from a set of directions consisting of row, column, major diagonal and minor diagonal. And if M?N at least two directions within each of one or more N×N or M×M cells within the minimal repeating unit include individual filters having all the spectral photoresponses, the at least two directions being selected from a set of directions consisting of row, column, major diagonal and minor diagonal of each cell.

Abstract: An apparatus includes an image sensor that is bonded to a spacer. The spacer has a thinned wall that defines a step and a recess in an interior wall at a first end of the spacer. The image sensor is bonded to the step within the recess of the spacer such that the image sensor is accepted completely within the recess of the spacer. A glass wafer is mounted on a second end of the spacer. A lens is mounted on the glass wafer such that light is to be directed through the lens to the image sensor.

Abstract: A liquid crystal on silicon (LCOS) panel is provided that includes an electrical contact layer deposited in a pattern on a portion of a transparent conductive layer. An alignment layer protects the conductive layer and electrical contact layer during LCOS panel assembly. The alignment layer is etched away to expose the electrical contact, which protects the underlying conductive layer from the etching process. The resulting LCOS panel has more reliably formed electrical contacts for improved stability of electrical connections to the conductive layer. A method for forming an electrical contact layer on a conductive layer of a LCOS panel includes steps for depositing a patterned layer on a portion of the conductive layer. The method is compatible with microfabrication techniques for scalable manufacturing. The resulting LCOS panel includes a pattern of one or more electrical contacts exposed on a portion of the conductive layer.