Abstract: A metal pattern for a high frequency signal is patterned on a flexile substrate, and the flexile substrate is bent in such a way as to form a substantially right angle at a spot corresponding to an end of the metal pattern for the signal. And an end of the metal pattern is fixedly attached to a lead pin for signaling, attached to a stem, for electrical continuity, so as to be in a posture horizontal with each other. Meanwhile, a part of the lead pins attached to the stem, being in such a state as penetrated through respective holes provided in the flexible substrate, is fixedly attached to a part of metal patterns provided on the flexible substrate so as to ensure electrical continuity therebetween.

Abstract: In an optical transmission module having a communication module which is freely movable in a case, when a tensile force is generated on an optical cable after connection of an optical transmission module, optical coupling surface and an optical axis center follow each other and thus stable optical transmission can be constantly performed.

Abstract: A technology to automatically control the biasing of an optical duobinary transmitter using a single-drive LN-MZ modulator is provided. A low-frequency signal is amplitude modulated onto a voltage signal input into a Mach-Zehnder optical modulator 22. The optical output from the optical modulator 22 is detected by an optical detection subsystem 30. In a bias control subsystem 40, the low-frequency signal component amplitude modulated onto the electrical signal is detected from the optical output, and a DC bias voltage applied to the optical modulator is controlled such that the low-frequency signal component is either minimized or maximized.

Abstract: Provided is a semiconductor optical device, which has a buried heterostructure structure and is formed in a structure capable of reducing a parasitic capacitance to further improve characteristics thereof, and also provided are an optical transmitter module, an optical transceiver module, and an optical transmission equipment. The semiconductor optical device includes a modulator portion for modulating light input along an emitting direction and radiating the modulated light, the modulator portion including: a mesa-stripe structure, which includes an active layer and extends in the emitting direction; and a buried layer provided adjacent to each side of the mesa-stripe structure, in which a distance between a lower surface of the buried layer and a lower surface of the active layer is 20% or more of a distance between the lower surface and an upper surface of the buried layer.

Abstract: An optical transmitting module of a coaxial type is provided in which a disturbance in a waveform of light which is output from a semiconductor laser element due to a signal which is output from an optical modulator unit can be suppressed. The optical transmitting module comprises an optical transmitting package of a coaxial type and a line board (40) connected to the optical transmitting package. The optical transmitting package comprises a semiconductor laser element, an optical modulator unit, and a conductor board (21). A drive current supply line (42) and a common ground line are formed over the line board (40), and a signal attenuation circuit (60) having one end electrically connected to the common ground line and the other end electrically connected to the drive current supply line (42) is provided over the line board (40).

Abstract: A purpose is to provide a semiconductor optical device having good characteristics to be formed on a semi-insulating InP substrate. Firstly, a semi-insulating substrate including a Ru—InP layer on a conductive substrate is used. Secondly, a semi-insulating substrate including a Ru—InP layer on a Ru—InP substrate or an Fe—InP substrate is used and semiconductor layers of an n-type semiconductor layer, a quantum-well layer, and a p-type semiconductor layer are stacked in this order.

Abstract: Provided is a backside illuminated semiconductor light-receiving device enhancing a frequency characteristic without deteriorating assembling operability. The light-receiving device includes a rectangular substrate; a light receiving mesa portion formed on a center portion of one side on a front surface of the substrate and includes a PN junction portion; a P-type electrode formed on the light receiving mesa portion and conductive with one side of the PN junction portion; an N-type electrode mesa portion formed on one corner portion of the one side; an N-type electrode pulled out to the N-type electrode mesa portion and conductive with the other side of the PN junction portion; a P-type electrode mesa portion and a dummy electrode mesa portion formed in a region including three other corner portions; and a dummy electrode formed on the dummy electrode mesa portion.

Abstract: The present invention provides a nitride semiconductor light emitting device having an n-type ohmic electrode with an Au face excellent in ohmic contacts and in mounting properties, and a method of manufacturing the same. The device uses an n-type ohmic electrode having a laminate structure that is composed of: a first layer containing Al as a main ingredient and having a thickness not greater than 10 nm or not less than 3 nm; a second layer containing one or more metals selected from Mo and Nb, so as to suppress the upward diffusion of Al; a third layer containing one or more metals selected from Ti and Pt, to suppress the downward diffusion of Al; and a fourth layer being made of Au, from the side in contact with an n-type nitride substrate in order of mention, and after the laminate structure is formed, the n-type ohmic electrode is annealed.

Abstract: A laser device capable of preventing deterioration of a light signal and a controlling method therefor are provided.

Abstract: A semiconductor element and a manufacturing method of the semiconductor element are provided. A ridge waveguide type semiconductor integrated element includes: an electrode of an EA portion and an electrode of an LD portion which are arranged so as to be away from each other; a contact layer of the EA portion and a contact layer of the LD portion which are arranged so as to be away from each other and in each of which the electrode is formed on an upper surface and an edge of at least a part of the upper surface is set to the same electric potential as that of the electrode; a passivation film as an insulative concave/convex structure extending from an edge of one of the two contact layers to an edge of the other contact layer; and a polyimide resin for embedding the passivation film.

Abstract: A flexible printed circuit board includes: a signal wiring pattern including: a transmission line for connecting an end of an optical device with an end of a signal generation circuit; and another transmission line for connecting another end of the optical device with another end of the signal generation circuit; a thin film resistor layer formed in a region including a region facing the signal wiring pattern so as to constitute a first microstrip line together with each of the transmission lines; a ground conductor formed in a region except a part of a region facing the thin film resistor layer within a region including a region facing the signal wiring pattern so as to constitute a second microstrip line together with each of the transmission lines; and an insulating layer formed between each two of the signal wiring pattern, the thin film resistor layer, and the ground conductor.

Abstract: Provided is a transmission system with increased degree of freedom in a lane configuration, which corrects disalignment of data sequences in respective channels due to differences in arrival time, thereby freely changing a number of lanes. The transmission system includes: a transmitter; a relay; and a receiver, the transmitter inputting data to be transmitted to the receiver, the relay transmitting the data transmitted by the transmitter to the receiver, the receiver receiving the data transmitted by the relay. The transmitter inserts into the data sequences channel information indicating a channel to which the data sequence is to be output. The relay corrects, based on the channel information, disalignment in an order of arrival of the data sequences received via a plurality of channels, the disalignment being generated by the differences in arrival time of the data sequences among the channels.

Abstract: It is an object of the present invention to realize a low cost laser light source capable of emitting several mW optical power while the operation current is reduced. In particular, the present invention concerns a 1.3 ?m wavelength band laser device suitable for several to several ten km short distance fiber optic transmission and also a less power consuming optical communication module in which such a laser is preferably mounted. As a laser structure which eliminates the necessity of adding an optical isolator by providing improved immunity to reflected light while lowering the operation current for less power consumption and not lowering the response speed, a short cavity laser which operates in multiple longitudinal modes is introduced. Especially, an angled mirror structure is formed at the laser's emitting edge to change the optical output direction so that the light is emitted from the top or bottom of the substrate.

Abstract: A semiconductor chip on which a light receiving element is mounted, a preamplifier for amplifying an output signal from the light receiving element, and an insulating carrier substrate on which the light receiving element is mounted are connected such that the output signal from the light receiving element is input to the preamplifier through electrodes on the carrier substrate, and there are provided two electrodes, on the carrier substrate, having a capacitance value of 40 fF or more therebetween in a state where no light receiving element is mounted.

Abstract: A semiconductor optical receiver device is provided, which a mesa comprising a plurality of semiconductor crystal layers formed on a semiconductor substrate including a pn junction having a first conductive semiconductor crystal layer and a second conductive semiconductor crystal layer and including a first contact layer on the semiconductor substrate, a plurality of electrodes to apply electric field to the pn junction are coupled on the semiconductor substrate, a second contact layer is formed on a buried layer in which the mesa is buried, and the electric field is applied to the pn junction through the first and second contact layers.

Abstract: A method of manufacturing semiconductor laser device capable of reducing ?L, with manufacturing restrictions satisfied, is provided. In a distributed-feedback or distributed-reflective semiconductor laser device, immediately before burying regrowth of a diffraction grating, halogen-based gas is introduced to a reactor, and etching is performed on the diffraction grating so that each side wall has at least two or more crystal faces and a ratio of length of an upper side in a waveguide direction to a bottom side parallel to a (100) surface is 0 to 0.3. And, a reactive product formed on side surfaces of the diffraction grating and in trench portions between stripes of the diffraction grating at an increase of temperature for regrowth is removed. Therefore, the diffraction grating with reduced height and a sine wave shape is obtained, thereby ?L of the device is reduced. Thus, an oscillation threshold and optical output efficiency can be improved.

Abstract: The interference phases of two optical delay line interferometers of an optical receiver adopting the DQPSK or the like are stabilized at points, which have a difference of 90°, without bifurcation of a receiving signal or receiving data. A low-speed photocurrent flowing through the current source terminal of a photodetector that receives interfering light outputted from an optical delay line interferometer is detected. The interference phase is identified by utilizing a variation in the AC or DC component of the photocurrent dependent on the interference phase of the optical delay line interferometer. The difference between the interference phases of two optical delay line interferometers is controlled to be 90°.

Abstract: Some semiconductor lasers have an initial failure mode that is advanced as the amount of optical power therein, namely, the amount of optical output observed from the outside increases in almost independent of the temperature. The initial failure mode that is advanced as the amount of optical output increases is not sufficiently screened, so that the initial failure rate is somewhat higher than that of the semiconductor laser having the conventional active layer material. It is effective to introduce a test with large optical output at lower temperature than average operating temperature such as room temperature, during the manufacturing process. This helps to eliminate elements having the initial failure mode that is advanced as the amount optical output increases, thereby to extend the expected life of the laser diodes.

Abstract: A nitride semiconductor light emitting device operating on a low voltage and excelling in reliability and performance is to be provided. It has a multi-layered p-type clad layer of at least two layers of a first p-type clad layer and a second p-type clad layer, wherein the second p-type clad layer contains a p-type impurity in a higher concentration the first p-type clad layer does, has a thickness ranging from 2 to 20 nm, and is formed of AlYGa1-YN whose Al content has a relationship of X?Y to the first p-type clad layer doped with a p-type impurity containing at least an AlXGa1-XN (0<X?0.2) layer, while a p-type ohmic electrode is formed at least over the second p-type clad layer in contact therewith.

Abstract: The invention provides a heat radiating structure which reduces a mechanical stress applied to an electronic part mounted on a printed circuit board including a semiconductor package. The heat radiating structure is constructed by a semiconductor package mounted on a printed circuit board, a thermal conduction sheet arranged on an upper surface of the semiconductor package, and a metal case provided with a heat radiating fin for receiving a heat transmitted form the thermal conduction sheet so as to discharge to an atmospheric air, and the metal case is provided with a concavo-convex structure in a contact portion with the thermal conduction sheet.