Abstract: An electronic-ink display apparatus is provided. The electronic-ink display apparatus includes a thin film transistor (TFT) array substrate, an electronic-ink layer, a common electrode, a second substrate and an edge sealant. The TFT array substrate includes a first substrate and a dielectric layer located above the first substrate. The electronic-ink layer, common electrode and second substrate are located above TFT array substrate in sequence. The edge sealant surrounds the electronic-ink layer and at least one part of the edge sealant is not overlaid above the dielectric layer.

Abstract: A glass substrate carrier assembly has a shelf and multiple pickup caps. The shelf is connected electrically to ground and has a bar, two stands and two brackets. The bar has two ends. The stands are mounted respectively on and extend down from the ends of the bar, are connected electrically to ground and are electrically conductive. The brackets are electrically conductive, are mounted respectively on and extend perpendicularly inward from the stands below the bar and face each other, and each bracket is T-shaped and has a distal edge and multiple tabs. The tabs are electrically conductive and are mounted on and extend perpendicularly from the distal edge of the bracket. The pickup caps are electrically conductive and are mounted on the tabs. Static electricity will pass through the pickup cap, the tab, the bracket and the stands to ground so static electricity will be removed from the shelf.

Abstract: An E-ink display panel is provided. In the E-ink display panel, a dielectric layer having a thickness of 1˜4 ?m is disposed on bottom-gate thin film transistors to prevent the pixel electrodes from being interfered by noise generated by the bottom-gate thin film transistors, the scan lines and the data lines. Therefore, the display quality of the E-ink display panel is improved.

Abstract: A multi-channel thin film transistor structure including a first conducting layer, an insulating layer, a semiconductor layer and a second conducting layer is provided. The first conducting layer formed on a substrate includes a gate electrode. The insulating layer covers the first conducting layer. The semiconductor layer formed on the insulating layer includes a plurality of semiconductor islands located above the gate electrode. The second conducting layer formed on the insulating layer and on the semiconductor layer includes a source electrode and a drain electrode. Each one of the semiconductor islands is coupled electrically with the source electrode at one end and coupled electrically with the drain electrode at the other end.

Abstract: An electronic ink display device with a frontplane laminate and a TFT array substrate is provided. In the TFT array substrate, a first metal layer and a dielectric layer are disposed on a first substrate. The dielectric layer covers the first metal layer. A second metal layer is disposed on the dielectric layer. The first metal layer includes scan lines and gates, and the second metal layer includes data lines and sources/drains. The first substrate is divided into multiple pixel areas by the data lines and the scan lines. The gates and the sources/drains are disposed inside the pixel areas. A channel layer is disposed on the dielectric layer between the gates and the sources/drains. Pixel electrodes are disposed inside the pixel areas and connected to the drains. An electronic ink material layer of the frontplane laminate is disposed between a transparent electrode layer and the TFT array substrate.

Abstract: An E-ink display panel including an active device matrix substrate, an opposite substrate and a display medium is provided. The active device matrix substrate includes pixel structures disposed thereon, and each pixel structure includes a bottom-gate thin film transistor and a pixel electrode. The pixel electrode disposed on the dielectric layer covers a portion of a channel layer of the bottom-gate thin film transistor and is electrically connected to a drain of the bottom-gate thin film transistor. The opposite substrate is above the active device matrix substrate. The display medium is disposed between the active device matrix substrate and the opposite substrate.

Abstract: A thin film transistor array substrate suitable for being applied in an electronic ink display device is provided. The thin film transistor array substrate includes a substrate, scan lines, data lines, thin film transistors, pixel electrodes and testing signal lines. The data lines and the scan lines are disposed and define a plurality of pixel regions on the substrate. Each thin film transistor is disposed in the respective pixel region and driven by the corresponding scan line and data line. In addition, each pixel electrode is disposed in respective pixel region and electrically connected to the thin film transistor corresponding thereto. Furthermore, the testing signal line connects to the scan lines and/or the data lines in series. The testing accuracy as well as the production yield of the electronic ink display device and the thin film transistor array substrate can be improved by the design of the aforementioned testing circuit.

Abstract: A thin film transistor (TFT) array substrate including a substrate, multiple scan lines, multiple data lines and multiple pixel units is provided. Each pixel unit includes a TFT and a pixel electrode. The pixel electrode is disposed above the TFT and electrically connected thereto. The TFT includes a first gate electrode, a first insulating layer, a semiconductor layer, a source electrode, a drain electrode, a second insulating layer and at least one second gate electrode. The second gate electrode is disposed on the second insulating layer positioned above the semiconductor layer and is electrically connected to the first gate electrode. The second gate electrode can be used to reduce the current leakage through the TFT. Moreover, an electronic ink display device comprising the above TFT array substrate is provided.

Abstract: An E-ink display and method for repairing the same is provided. The method is for repairing a thin film transistor array substrate of the E-ink display. The thin film transistor array substrate having a plurality of pixel units is provided initially. Each of the pixel unit includes a thin film transistor and a pixel electrode. The thin film transistor has a gate electrode, a source electrode and a drain electrode. The gate electrode, the source electrode and the drain electrode are connected electrically to a scan line, a data line and the pixel electrode respectively. A portion of the pixel electrode is located above the data line. Next, a repairing portion is formed at the space between the data line and the pixel electrode. The repairing portion is utilized to electrically connect the pixel electrode and the data line.

Abstract: An E-ink display and method for repairing the same is provided. The method is for repairing a thin film transistor array substrate of the E-ink display. The thin film transistor array substrate having a plurality of pixel units is provided initially. Each of the pixel unit includes a thin film transistor and a pixel electrode. The thin film transistor has a gate electrode, a source electrode and a drain electrode. The gate electrode, the source electrode and the drain electrode are connected electrically to a scan line, a data line and the pixel electrode respectively. A portion of the pixel electrode is located above the scan line. Next, a repairing portion is formed at the space between the scan line and the pixel electrode. The repairing portion is utilized to electrically connect the pixel electrode and the scan line.

Abstract: An indium tin oxide layer is formed on a glass substrate, and then a silicon nitride layer, an amorphous silicon layer and an n-type silicon layer are sequentially formed on the indium tin oxide layer to serve as a color filter. Thicknesses and processing conditions of the above layers are adjustable for providing various color filters, such as black matrixes, reflective red color filters, reflective green color filters, and reflective blue color filters.

Abstract: There is provided a reflection type/transflection type thin film transistor liquid crystal display, including an insulating substrate, a thin film transistor formed on the insulating substrate, a transparent electrode made of indium-tin-oxide formed on the thin film transistor and electrically contacted with a source region and a drain region of the thin film transistor, and a curved conducting structure with an inclination of 3 to 20 degrees formed on the transparent electrode.

Abstract: The method for fabricating reflector plate for a reflective liquid crystal display and the device is disclosed. The present invention includes the formation of a protection layer over the glass substrate having thin film transistors and a layer of transparent electrodes on top, followed by the formation of a layer of undulating resin over the protection layer. If the reflector plate to be produced is a semi-transmissive type, a light-transmitting region is created over the protection layer. Since the protection layer is created in advance of the undulating resin outgrowth, the present method can effectively prevent reflection from the exposure stage during the lithography process, thus the problem of abnormal pattern marks occurring on the reflective surface can be avoided, and the exposure time and the production yield are enhanced.

Abstract: A method for fabricating an optical interference display cell is described. A first electrode and a sacrificial layer are sequentially formed on a transparent substrate and at least two openings are formed in the first electrode and the sacrificial layer to define a position of the optical interference display cell. An insulated heat-resistant inorganic supporter is formed in each of the openings. A second electrode is formed on the sacrificial layer and the supporters. Finally, a remote plasma etching process is used for removing the sacrificial layer.

Abstract: An optical interference color display comprising a transparent substrate, an inner-front optical diffusion layer, a plurality of first electrodes, a patterned support layer, a plurality of optical films and a plurality of second electrodes is provided. The inner-front optical diffusion layer is on the transparent substrate and the first electrodes are on the inner-front optical diffusion layer. The patterned support layer is on the inner-front optical diffusion layer between the first electrodes. The optical film is on the first electrodes and the second electrodes are positioned over the respective first electrodes. The second electrodes are supported through the patterned support layer. Furthermore, there is an air gap between the second electrodes and their respective first electrodes.

Abstract: An interference display unit with a first electrode, a second electrode and posts located between the two electrodes is provided. The characteristic of the interference display unit is that the second electrode's stress is released through a thermal process. The position of the second electrode is shifted and the distance between the first electrode and the second electrode is therefore defined. A method for fabricating the structure described as follow. A first electrode and a sacrificial layer are sequentially formed on a substrate and at least two openings are formed in the first electrode and the sacrificial layer. A supporter is formed in the opening and the supporter may have at least one arm on the top portion of the supporter. A second electrode is formed on the sacrificial layer and the supporter and a thermal process is performed. Finally, The sacrificial layer is removed.

Abstract: A color changeable pixel comprises a first plate, a second plate and a third plate. The three plates are settled in parallel. The second plate is a deformable and reflective plate. An incident light from one side of the first plate is modulated and only specific frequency light reflects by the second plate. The frequency of the reflected light is related to the distance between the first plate and the second plate. The second plate shifts by the voltage added on the third plate to change the distance between the first plate and the second plate. Therefore, the frequency of the reflected light is altered.

Abstract: An optical interference display panel is disclosed that has a substrate, an optical interference reflection structure, and a protection structure. The optical interference reflection structure has many color-changeable pixels and is formed on the substrate. The protection structure is adhered to the substrate with an adhesive and encloses the optical interference reflection structure between the substrate and the protection structure. The adhesive is used to hermetically isolate the optical interference reflection structure from water, dust and oxygen in the air. Moreover, the protection structure prevents the interference reflection structure from being damaged by an external force.

Abstract: The method for fabricating reflector plate for a reflective liquid crystal display and the device is disclosed. The present invention includes the formation of a protection layer over the glass substrate having thin film transistors and a layer of transparent electrodes on top, followed by the formation of a layer of undulating resin over the protection layer. If the reflector plate to be produced is a semi-transmissive type, a light-transmitting region is created over the protection layer. Since the protection layer is created in advance of the undulating resin outgrowth, the present method can effectively prevent reflection from the exposure stage during the lithography process, thus the problem of abnormal pattern marks occurring on the reflective surface can be avoided, and the exposure time and the production yield are enhanced.

Abstract: An optical-interference type reflective panel and a method for making the same are disclosed, wherein the display panel has a substrate on which multiple supporting layers are firstly formed. Then, a plurality of first conductive optical film stacks, spacing layers and multiple second conductive optical film stacks are sequentially formed on the substrate. Finally, once the spacing layers are removed, optical-interference regulators are formed. Since said supporting layers forming step is prior to the first conductive optical film stacks, a precise back-side exposing step is not necessary so that the making procedure of the panel is simplified.