Abstract: It is to provide a semiconductor device, a semiconductor system, and a method of controlling the semiconductor device capable of reducing the power consumption. According to one embodiment, a semiconductor device includes a photo coupler control circuit that passes the current to a first signal path for a predetermined period when detecting a change of the input signal supplied from the outside, an insulating circuit that transmits a pulse signal indicating the change of the input signal, from the first signal path to a second signal path insulated from the first signal path, according to the current flow to the first signal path, a holding circuit that generates an input reproducing signal as a reproducing signal of the input signal from the pulse signal transmitted to the second signal path by the insulating circuit, and an internal circuit that receives the input reproducing signal generated by the holding circuit.
Abstract: An ultrasonic receiver receives ultrasonic waves reflected at a plurality of portions of the body of a person to be measured, and thus the person to be measured needs to input the approximate height of himself/herself. An electrostatic capacitance sensor includes a transmission electrode and a reception electrode. The electrostatic capacitance sensor measures a mutual capacitance between the transmission electrode and the reception electrode by a mutual capacitance method. A variable frequency pulse generator generates a pulse supplied to the transmission electrode. A control apparatus allows the variable frequency pulse generator to sweep the frequency of the pulse and allows the electrostatic capacitance sensor to measure the mutual capacitance to identify a frequency at which the measured mutual capacitance is minimized. The control apparatus obtains the height of a person to be measured on the basis of the identified frequency.
Abstract: A semiconductor device includes a distortion correction unit that performs correct distortion processing on a captured image, a SRAM that stores image data after the distortion correction processing, a filter processing unit that receives the image data after the distortion correction processing from the SRAM and that performs smoothing filter processing on the image data after the distortion correction processing, after the image data after the distortion correction processing having a size required for the smoothing filter processing is stored in the SRAM, and an image reduction unit that performs reduction processing on image data after the smoothing filter processing.
Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect temperature and a substantial linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.
Abstract: To improve the efficiency of pressure detection, a driver applies a positive-phase signal to a capacitance element from an opposite side to a coupling point in a control device. Another driver applies a reverse-phase signal to another capacitance element from an opposite side to the coupling point. A control unit detects pressures applied to the capacitance elements based on a potential fluctuation at the coupling point.
Abstract: A cryptographic communication method using a dynamically-generated private key is provided. A signal generation unit outputs a second signal obtained by giving an error in a predetermined range to a signal obtained based on a first signal. An error correction generation unit outputs a third signal obtained based on the second signal and auxiliary information for correcting an error included in the second signal. A private-key generation unit generates a first private key based on the third signal. An encryption calculation unit outputs an encrypted signal obtained by encrypting a fourth signal based on the first private key.
Abstract: The control system according to embodiments includes a switching element, a control unit controlling the conductive state of the switching element, and a first capacitor storing charge supplied to the control unit. The first capacitor and the control unit are connected with each other via the switching element.
Abstract: A semiconductor device for suppressing a variation in characteristics caused by a current flowing at the time of breakdown is disclosed. The first power MOS transistor Q 1 and the column CLM are formed in the first element region FCM defined in the epitaxial layer NEL, and the second power MOS transistor Q 2 is formed in the second element region RCM. The first power MOS transistor Q 1 includes a first trench gate electrode TGE1, and the second power MOS transistor Q 2 includes a second trench gate electrode TGE2. The depth GDP1 of the first trench gate electrode TGE1 is shallower than the depth GDP2 of the second trench gate electrode TGE2.
September 17, 2019
Date of Patent:
May 11, 2021
RENESAS ELECTRONICS CORPORATION
Taro Moriya, Hiroshi Yanagigawa, Kazuhisa Mori
Abstract: The efficiency of signal transmission is improved. A communication apparatus includes a memory unit, a communication control unit, and an updating unit. A retransmission interval value is stored in the memory unit. The communication control unit transmits a first signal and receives a response signal corresponding to the first signal from a receiver. If the received response signal is a negative response signal, the first signal is retransmitted at a time interval longer than or equal to the retransmission interval value stored in the memory unit, from the transmission of the first signal. The updating unit updates the retransmission interval value stored in the memory unit, according to a time from the transmission of the first signal to the reception of the positive response signal corresponding to the first signal.
Abstract: A semiconductor device includes a first insulating layer, an optical waveguide formed on the first insulating layer, a fixed charge layer formed on the first insulating layer such that the fixed charge layer covers the optical waveguide, and a second insulating layer formed on the fixed charge layer.
Abstract: A second gate dielectric film material and a memory gate electrode material are formed on a semiconductor substrate. The memory gate electrode material and the second gate dielectric film material formed in a peripheral circuit forming region are removed, and a part of each of the memory gate electrode material and the second gate dielectric film material is left in the memory cell forming region. Thereafter, in a state that the semiconductor substrate in the memory cell forming region is covered with a part of each of the memory gate electrode material and the second gate dielectric film material, heat treatment is performed to the semiconductor substrate to form a third gate dielectric film on the semiconductor substrate located in the peripheral circuit forming region. Thereafter, a memory gate electrode and a second gate dielectric film are formed.
Abstract: A semiconductor device capable of executing fault injection test on a plurality of failure detection mechanism in a short time is provided. The semiconductor device 1 has a plurality of hierarchical modules and an error control module 100 for controlling errors in the plurality of hierarchical modules. Each hierarchical module has a safety mechanism to detect failures in the functions of the components that make up the hierarchical modules. The error control module 100 includes a status register 120 configured to record data indicative of the status of failure of each hierarchical module, and a fault injection function 110 that outputs an error signal to the status register 120 to perform fault injection test. The error signal is inputted into the safety mechanism via the status register 120.
Abstract: A non-leaded semiconductor device comprises a sealing body for sealing a semiconductor chip, a tab in the interior of the sealing body, suspension leads for supporting the tab, leads having respective surfaces exposed to outer edge portions of a back surface of the sealing body, and wires connecting pads formed on the semiconductor chip and the leads. End portions of the suspension leads positioned in an outer periphery portion of the sealing body are unexposed to the back surface of the sealing body, but are covered with the sealing body. Stand-off portions of the suspending leads are not formed in resin molding. When cutting the suspending leads, corner portions of the back surface of the sealing body are supported by a flat portion of a holder portion in a cutting die having an area wider than a cutting allowance of the suspending leads, whereby chipping of the resin is prevented.
Abstract: Reliability of a semiconductor device is improved. A method of manufacturing a semiconductor device includes a step of preparing a lead frame in which a plurality of device forming regions are arranged in a matrix, a die bonding step of mounting a semiconductor chip on each device region, a resin sealing step of individually covering each semiconductor chip with a sealing body, and a lead plating step of plating an outer portion of a lead exposed from the sealing body. Between the resin sealing step and the lead plating step, an inspection step for detecting defective products in the resin sealing step and a defective product removal step for removing a device region of defective products are provided.
Abstract: In a semiconductor device including a lockstep function, conflicts of bus accesses by a plurality of processors are suppressed. The semiconductor device includes a first processor, a second processor for monitoring operation of the first processor in a first mode, first and second buses, first and second non-shared resources dedicated to either the first or second processor in a second mode, and a first selector for selecting a bus for transferring interface signals between the second processor and the selected bus. In a second mode in which the first and second processors execute different instructions, the first selector selects the second bus. In the second mode, the first non-shared resource is accessed by the first processor via the first bus and the second non-shared resource is accessed by the second processor via the second bus.
Abstract: A semiconductor device including an IE-type trench gate IGBT requires to be improved in IE effect to reduce on voltage. The semiconductor device includes a trench gate electrode or a trench emitter electrode between an active cell region and an inactive cell region. The trench gate electrode and the trench emitter electrode are provided across the inactive cell region.
Abstract: A first amorphous film containing hafnium, oxygen and a first element such as zirconium is formed, a plurality of grains containing a second element different from any of hafnium, oxygen and the first element are formed on the first amorphous film, a second amorphous film made of the same material as the first amorphous film is formed on the plurality of grains and on the first amorphous film, and a metal film is formed on the second amorphous film. Thereafter, by performing heat treatment, the first amorphous film is crystallized to form a first orthorhombic ferroelectric film and the second amorphous film is crystallized to form a second orthorhombic ferroelectric film.
Abstract: Limitations on memory access decrease the computing capability of related-art semiconductor devices during convolution processing in a convolutional neural network. A semiconductor device according to an aspect of the present invention includes an accelerator section that performs computation on a plurality of intermediate layers included in a convolutional neural network by using a memory having a plurality of banks capable of changing the read/write status on an individual bank basis. The accelerator section includes a network layer control section that controls a memory control section in such a manner as to change the read/write status assigned to the banks storing input data or output data of the intermediate layers in accordance with the transfer amounts and transfer rates of the input data and output data of the intermediate layers included in the convolutional neural network.
May 7, 2019
Date of Patent:
May 4, 2021
RENESAS ELECTRONICS CORPORATION
Manabu Sasamoto, Atsushi Nakamura, Hanno Lieske, Shigeru Matsuo
Abstract: A semiconductor device capable of stabilizing an internal voltage is provided. According to one embodiment, the semiconductor device comprises a stabilized power supply circuit for generating a first voltage, a charge pump circuit for generating a second voltage different from the first voltage using the first voltage, the COUT2 including a comparison circuit for comparing the second voltage with a reference voltage, and a dummy load circuit controlled to be turned on or off in response to a comparison result signal COUT2 outputted from the comparison circuit, and the Dummy load circuit receives the comparison result signal COUT2 and is turned on for a predetermined period, whereby at least a part of a current IDD based on the first voltage flows into the dummy load circuit.
Abstract: A monolithic integrated circuit for controlling a high-side switching element for a load using a bootstrap capacitor is disclosed. The integrated circuit comprises a first supply voltage input for receiving a first input supply voltage V1, a second supply voltage input for receiving a second, current-limited input supply voltage VCP, a voltage-sensing input for receiving a source voltage, a first output for providing a drive signal VG to the switching element, a second output for providing a charging signal VBS to a bootstrap capacitor, a pre-driver for generating the drive signal, the pre-driver having a voltage input and an output which is coupled to the first output, and a power supply control section comprising first and second switches. The first and second switches are arranged in series between the first input and the second output, the second input is coupled to a node between the first and second switches, and the second node is coupled to a voltage input of the pre-driver.